the last mile: moving 3d ic into hvm e. jan vardaman president · ctea2105 © 2015 techsearch...

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CTEA2105 © 2015 TechSearch International, Inc. The Last Mile: Moving 3D IC into HVM E. Jan Vardaman President TechSearch International, Inc. www.techsearchinc.com

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CTEA2105 © 2015 TechSearch International, Inc.

The Last Mile: Moving 3D IC into HVM

E. Jan Vardaman President

TechSearch International, Inc.

www.techsearchinc.com

CTEA2105 © 2015 TechSearch International, Inc.

First the GOOD NEWS!!!!

Recent TSV Process Improvements and more to come…….

Endura® Ventura™ PVD Tool

SSEC WaferEtch TSV Revealer

1 This presentation and the information contained within it is the property of SPTS Technologies and is confidential. Any duplication, disclosure, distribution, dissemination or copying

of this presentation or its contents or use for any purpose other than that for which it is supplied is strictly prohibited, without the prior written consent of SPTS Technologies. © 2014 SPTS Technologies

SPTS Products for VR Etch

DSi

Rapier

Rapier XE

±5%

±5%

±3.5% P

erfo

rman

ce

Time

+80%

+89% +240%

Highest etch rate Best uniformity = Lower CoO +

Higher Yield

CTEA2105 © 2015 TechSearch International, Inc.

Now the BAD NEWS: It Takes Time…..

•  DRAM stacking R&D at Micron started in 2002, first product in HVM 2015 Samsung delivering RDIMM with stacked die (TSV)

•  Xilinx Stacked Silicon Interconnect (Si interposer with TSVs) R&D started in 2006, first HVM in 2012

Source: TechSearch International, Inc.

CTEA2105 © 2015 TechSearch International, Inc.

2015: The Year of Memory Stacks with TSV •  New memory architectures •  Tezzaron high-speed memory

–  Production shipments –  High-performance

applications •  Micron Hybrid Memory Cube

(HMC) –  Engineering samples now –  Shipments in 2015 –  Network systems, GPUs,

and other applications •  Samsung RDIMM with stacked

memory for servers –  Modules delivered in Sept.

2014, in product 2015 •  SK Hynix (HBM)

–  Stacked die mounted on interposer

–  GPU, etc. applications

Source: Samsung.

Source: SK Hynix.

CTEA2105 © 2015 TechSearch International, Inc.

Today: High-Performance Applications •  First memory products are for high-

performance applications •  FPGA shipments started (HVM 2012)

with Silicon Interposer – Xilinx 6 products (and counting) – Expanding from just high-

performance FPGAs to mid-range FPGAs

•  ASIC designs moving into production with stacked memory

•  GPU+stacked memory •  Applications include high-end

graphics, servers, and network systems

– Applications require high-performance (no other way)

– Cost/benefit analysis allows adoption

– Low unit volumes, high dollar value Source: Xilinx.

Courtesy of Micron.

CTEA2105 © 2015 TechSearch International, Inc.

Challenges for 3D IC Expansion

EDA Tool Availability and Ease of Use

Assembly: Stacking of Die

Wafer Thinning: Debond Process

Thermal: With Logic + Memory Stack

Test Methodology: KGD or KGS

Yield: Impacts Cost

Supply Chain and InfrastructureSource: TechSearch International, Inc.

CTEA2105 © 2015 TechSearch International, Inc.

EDA Tool Challenges •  EDA = Automation (difficult to decide what and where to automate

because many different requirements and solutions in development to development to support 3D IC technology) –  Floorplanning –  Routing –  Power/signal integrity –  Thermally aware design

•  Large memory vendors of HMC and HBM do not need additional tools beyond SPICE simulators –  Require redundancy –  Require BIST (and repair!) –  Require DFT –  Products are “new architectures”

•  Adoption of 3D IC requires a new system architecture –  Design from system level –  Co-design required

CTEA2105 © 2015 TechSearch International, Inc.

Process and Architectural Choices: Need Tools •  Stack orientation •  Technology nodes •  Package type •  Number of TSVs and location •  Keep-out zones (KOZ) •  Local/global chip-package interaction,

how to connect die, reliability, and ESD •  Timing closure at package level •  Power distribution network, signal

integrity, and thermal performance •  Requirements or backside re-distribution

layers (BRDLs) •  Trade-off for pitch and number of BRDLs •  Create blocks to define process, metal/via

topologies, an via profiles

CTEA2105 © 2015 TechSearch International, Inc.

Driving the Narrow Road Between High Cost and Low Reliability

•  Function of EDA Tool is to help driving the narrow road between high cost and low reliability

CTEA2105 © 2015 TechSearch International, Inc.

Issues with Temporary Bond/Debond

•  Challenge is wafer thinning at ≤50 µm (100µm interposers OK)

•  Voids created during the adhesive application process

•  Wafer breakage or chipping •  Bump deformation during debond •  Particles created during process •  Damage to wafer from laser or high

temperature processing •  Reactions to chemical solvents •  Room temperature debonding

required •  Almost a dozen companies (and

counting) with bond/debond materials or developments –  Requires up to 18 months to

qualify a new process

Adhesive stronger than silicon

CTEA2105 © 2015 TechSearch International, Inc.

Assembly Challenges for 3D ICs •  Micro bump

–  Pitch typically 40 µm –  Cu pillar with solder cap (SnAg, SnCu,

pure Sn, or other alloys) –  Other bump metallurgies?

•  Assembly –  Micro bumps variation may present

bonding challenges –  Requires high accuracy bonder (±2µm),

but trade-off is slower speed –  T/C bonders >$1 million –  Throughput improvements needed, some

new players have entered –  Yield must be high

•  Underfill material and methods require improvement (No voids allowed) –  Probably not capillary flow –  Non-conductive paste (NCP)? –  Non-conductive film (NCF) some

applications

Source: Samsung.

Source: SK Hynix.

CTEA2105 © 2015 TechSearch International, Inc.

Test Issues for 3D IC with TSV

•  Want to minimize total cost of test and test-escape

•  Today: “Stack and Pray” = accumulated yield loss

•  Today 3D IC memory stacks tested in packages •  100% Test before assembly and after each assembly event

= high test cost

•  Do we test through the TSV/micro bump interface or around it?

–  Testing a 10,000 micro bump array is difficult and potentially very expensive

–  Need to test connections –  Need BIST, redundancy, self-repair

1 chip 2 chips 3 chips 4 chips 90% 81% 73% 64%

Source: Adapted from P. Franzon

CTEA2105 © 2015 TechSearch International, Inc.

Why the Delay in Memory + Logic? •  Logic and memory stack for

mobile 2018 (at earliest) •  Today more expensive than PoP

solution –  3D IC process yield is low –  Process steps such as debond

during thinning –  Test strategy required –  Impacts total cost

•  Couples memory and logic supply so can’t easily swap one memory supplier for another

•  Business risk (versus alternatives) –  Mobile products must meet steep

product ramp •  Thermal issues, unless low-power

design is available (requires new architecture)

Source: SK Hynix.

CTEA2105 © 2015 TechSearch International, Inc.

PoP Remains Alternative for AP •  Thinner package and smaller

footprint –  Today 1.0mm height

requirement –  Future ≤0.8 mm

•  3D IC with TSV provides the ultimate in package height reduction, highest density and performance

•  PoP in high-end smartphones –  Option 1: Continue with FC

on thin substrate –  Option 2: Embedded active

die (application processor) in bottom laminate substrate

–  Option 3: Fan-out WLP with application processor as bottom package

–  Option 4: 3D IC with TSVs for memory and logic stack (requires new architecture to handle thermal constraints, lower cost, and less risk)

Source: Intel

Source: Renesas.

Source: Amkor Technology.

CTEA2105 © 2015 TechSearch International, Inc.

3D IC Design: Thermal is Critical •  Low-cost thermal management solutions must be solved in order for 3D IC for logic and

memory to see widespread adoption •  Current PoP solution provides better thermal solution •  Thermal issues: 3D circuits increase total power generated per unit surface area

–  Chips in the stack may overheat of cooling is not provided –  Space may be too small for cooling channels (very small gap for fluid flow) –  Thinning chips creates extreme conditions for on-chip hot spot –  Need new low-power designs

Source: Renesas.

CTEA2105 © 2015 TechSearch International, Inc.

3D IC for Mobile Products?

•  Smartphone ASPs continue to decline •  Creates price pressure that makes adoption of advanced packaging technology challenging,

especially interposers –  Requires low-cost solution AND infrastructure to meet steep ramp

Source: Adapted from IDC.

Source: TechSearch International, Inc.

Source: TPSS.

CTEA2105 © 2015 TechSearch International, Inc.

3D IC Cost Challenges •  Via fabrication and via fill have

seen great improvement •  Yield is the biggest cost drive

today •  Assembly yield of fine pitch

micro bumped components on thin wafers or chips with TSVs is still low –  Any yield loss in this step is a

problem because good die and interposers must be scrapped

•  TSV process costs (via etch, fill, and reveal) are lower than RDL process costs

•  Thin wafer bond/debond throughput is low and yield loss is expensive, although both cost drivers are expected to improve in the future

Source: SavanSys Solutions

800

805

810

815

820

825

830

10 20 30 40 50 60 70 80

Waf

er C

ost

Wafers per hour

Effect of Debond Throughput on Total Wafer Cost

720

740

760

780

800

820

840

98 97 96 95 94 93 92 91 90

Waf

er C

ost

Yield (%)

Effect of Yield on Total Wafer Cost

CTEA2105 © 2015 TechSearch International, Inc.

3D IC with TSV Adoption Timeline

•  Image sensors with backside vias from Toshiba in January 2008 •  Tezzaron DRAM 2013, Micron HMC 2015, SK Hynix HBM 2015, Samsung RDIMM 2015 •  Application processor/memory 2018 at earliest •  Logic on logic 2019 at earliest •  Automotive sensors 2019

Source: TechSearch International, Inc.

CTEA2105 © 2015 TechSearch International, Inc.

Where Does An Interposer Fit?

•  Large die fabricated on advanced technology nodes (such as FPGA or large ASIC) –  Decrease die size –  Increase yield

•  Functional optimization –  Lower cost to fab

functions on the least expensive technology node

–  Allows reuse of design •  Logic and memory for power

and performance –  Increased Bandwidth –  Improved Performance

per Watt

Source: Altera.

CTEA2105 © 2015 TechSearch International, Inc.

Si Interposer Era: The Beginning

•  FPGA shipments started (HVM 2012) – Xilinx has at least 6 products – Expanding from just high-performance

FPGAs to mid-range FPGAs •  ASIC designs moving into production •  GPU+stacked memory •  Applications include network systems and

future servers – Applications require high performance – Cost/benefit analysis allows adoption – Low unit volumes, high dollar value

•  Potential processor partitioning for mobile products???

– High unit volumes – Needs low-cost solution (not currently

available)

Source: Xilinx.

CTEA2105 © 2015 TechSearch International, Inc.

Conclusions

•  3D IC Status –  Applications in production: image sensor + logic –  Applications moving into production: stacked memory –  Industry is working to resolve issues that will allow 3D IC with TSV

in additional applications – Good engineering work still required to improve yield and lower

cost – Don’t give up!

•  2.5D Interposer Before 3D IC (silicon interposers?, organic? glass?) – ASIC – GPU/CPU – Availability of stacked memory critical for some applications

•  Other alternatives (Laminate MCM, Intel’s Silicon Bridge, Xilinx SLIT) •  Concern about suppliers and assembly capability are being addressed

– Business models settling down •  Cost remains a concern in every discussion

–  Yield improvements for process –  New architectures are required