the measurement and characterisation of mst devices (mems) npl, monday 27 february 2006

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The Measurement and Characterisation of MST Devices (MEMS) NPL, Monday 27 February 2006

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Page 1: The Measurement and Characterisation of MST Devices (MEMS) NPL, Monday 27 February 2006

The Measurement and Characterisation of MST Devices (MEMS)

NPL, Monday 27 February 2006

Page 2: The Measurement and Characterisation of MST Devices (MEMS) NPL, Monday 27 February 2006

CEMMNT

• Centre of Excellence for Metrology in Micro and Nano Technology

• NPL, QinetiQ, Taylor Hobson, SEIC, Coventor

• Collaboration to enable technology transfer and implement best practice for characterisation of MNT

Page 3: The Measurement and Characterisation of MST Devices (MEMS) NPL, Monday 27 February 2006

Current technology limitations

• High aspect ratio devices– No suitable techniques for dimensional

measurements, sidewall properties– Destructive testing required

• 3D components– Surface measurement techniques not suitable for

complex 3D forms– Ra values usually not required - form of structures is

important

Page 4: The Measurement and Characterisation of MST Devices (MEMS) NPL, Monday 27 February 2006

Current technology limitations

• In-process measurements– Lack of suitable apparatus– System engineering solutions sought

• No traceability between techniques – Optical methods providing differing data to

probe measurements– Lack of standards, calibration samples

Page 5: The Measurement and Characterisation of MST Devices (MEMS) NPL, Monday 27 February 2006

Some solutions

• New technogies for measurement– Raman stress/crystallinity measurements– New probe instruments– SNOM

• Standards - NPL– Software measurement standards– Areal artefacts - grids, sinusoids, star patterns