the Technology Driver of the Electronics Industry

International Symposium on

Venue : International Conference Center, Microelectronics and Information Systems Research Center, National Chiao Tung University ( Address : 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan, R.O.C. )Organizer : College of Electrical and Computer Engineering, National Chiao Tung UniversityContact persons : Prof. Horng-Chih Lin, Tel : +886-3-5712121ext.54193, e-mail : hclin@faculty.nctu.edu.tw Assistant Patty Chen, Tel : +886-3-5712121ext.54107, e-mail : patty@mail.nctu.edu.tw

Forty five years ago, the invention of the non-volatile semiconductor memory (NVSM) by Dr. Simon Sze and his colleague, the late Dr. Dawon Kahng, while working at Bell Laboratories, sparked a revolution in solid-state physics and microelectronics that continues to this day. From that first floating-gate memory device to the latest 512Gb NAND flash microchip, NVSM-inspired technology has ushered in the Digital Age and forever changed the world we live in.

To celebrate the 45th anniversary of the invention of NVSM and to pay tribute to hundreds of thousands of scientists and engineers, who have devoted their talents and energies to the research, development, and application of NVSM technology, we have organized this “International Symposium on Non-volatile Memory the Technology Driver of the Electronics Industry,’’ and invited 7 renowned experts to review the milestones of various NVSM technologies and share their expertise and perspective with the audience about the recent advances and future trends.

In Commemoration of the

45thAnniversary

of the Invention of the Nonvolatile Semiconductor Memory

March 26, 2012

It’s free to attend the Symposium, but the attendee must register on-line in advance (February 1 to March 23, 2012).

Registration website : http://www.nfc.nctu.edu.tw/NVM

Agenda Opening Address

Prof. Yan-Hwa Wu Lee / President, National Chiao Tung University

Deputy Minister, National Science Council

9:00 ~ 9:10

9:10 ~ 9:20

Session I : Floating-gate Memory Technology (A)

Chairman : Prof. Chung-Yu Wu / Chair Professor, National Chiao Tung University

Non-Volatile Semiconductor Memory in Retrospect and Prospect

Prof. Simon M. Sze / Chair Professor, National Chiao Tung University

9:20 ~ 10:05

Coffee Break 10:05 ~ 10:30

Session II : Floating-gate Memory Technology (B)

Chairman : Dr. Fu-Liang Yang / Director General, National Nano Device Laboratories

Brief History of ETOXTM

NOR Flash Memory

Dr. Stefan K. Lai / Technical Advisor, Xinnova Technology, Inc.

10:30 ~ 11:15

Future Prospects of NAND Flash Memory Technology – the

Evolution from Floating Gate to Charge Trapping to 3D Stacking

Dr. Chih-Yuan Lu / President, Macronix International Co., Ltd.

11:15 ~ 12:00

Lunch 12:00 ~ 13:00

Session III : FRAM & MRAM

Chairman : Prof. Ching-Te Chuang / Chair Professor, National Chiao Tung University

Ferroelectric Random Access Memories

Prof. Hiroshi Ishiwara / Konkuk University

13:00 ~ 13:45

Spintronics for Non-Volatile Magnetic Random Access Memory

Prof. Stuart A. Wolf / Director, University of Virginia

13:45 ~ 14:30

Coffee Break 14:30 ~ 14:50

Session IV : PCM & RRAM

Chairman : Dr. Kuang Yeu Hsieh / Director, Macronix International Co., Ltd.

Phase Change Memory

Prof. H.-S. Philip Wong / Stanford University

14:50 ~ 15:35

Redox-Based Resistive Switching Memories

Prof. Rainer Waser / RWTH Aachen University

15:35 ~ 16:20

Session V : Panel Discussion 16:20 ~ 17:00

Chairman : Prof. Tahui Wang / National Chiao Tung University

Sponsors : National Chiao Tung UniversityNational Program on Nano TechnologyAcademic-Industry Bridging Program for National Program for Intelligent Electronics

In Cooperation with :IEEE Taipei SectionIEEE EDS Taipei ChapterIEEE EDS Tainan ChapterTrans. Wireless Technology Foundation

National Nano Device LaboratoriesTaiwan Semiconductor Industry AssociationThe Electronics Devices and Materials Association