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TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: [email protected] MGambrill, Michael: [email protected] Liang, Roger: [email protected]

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Page 1: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

High voltage charger solution

Li, Wang: [email protected]

MGambrill, Michael: [email protected]

Liang, Roger: [email protected]

Page 2: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

Abstract

• A typical bq24610 Application

• A high voltage charger block diagram

• Test results

• More higher input voltage solution

• SMBus high voltage charger solution

Page 3: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

A typical bq24610 Application

3

Page 4: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

A Typical standalone charger application circuit

Power SourceSelector

BATDRV

REGN

BTST

HIDRV

PH

LODRV

GND

SRP

SRN

VFB

ACNACP

ACDRV

VREF

CE

ISET1

ISET2

ACSET

TS

TTC

STAT1

STAT2

PG

Q5

L: 6.8µH

C210µF

SYSTEM LOAD

C810µF

RSR10m

C11 0.1µF

bq24610

C310µF

C410uF

VCC

Q1

Q4

Q2

Q3

C12.2µF

Adapter

RAC: 10m

C710µF

Battery Pack

C100.1µF

C5:1µFC121µF

C170.22µF

C70.1uF

C9100pF

R1953kΩ

R2105kΩ

R7100kΩ

R857.6kΩ

R5100kΩ

R622.1kΩ

R3100kΩ

R495.3kΩ

R99.31kΩ

R10430kΩ

PackThermistor

R11:10kΩ

R12:10kΩ

R13:10kΩ

Adapter

bq24610: 600kHz, Li-Ion4x4mm QFN-24

R162Ω

Typical 1-6 Li-Ion Cells, VIN max: 28V

10

Page 5: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

Optional section divider or presentation title slideHigh voltage charger block diagram

5

Page 6: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

8-cell Li-ion battery charger

•Basic requirements: Output: if 4.2V/cell battery, the output voltage setting needs 4.2Vx8=33.6V.

Input: Vin > 33.6V+few volt hysteresis

A typical bq24610/30 application circuit can not accept the input voltage higher than 32V (Input OVP setting).

Page 7: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

Modified Charger Block Diagram

Battery Pack

BATDRV

REGN

BTST

HIDRV

PH

LODRV

GND

SRP

SRN

VFB

VREF

ISET1

ISET2

ACSET

TS

TTC

STAT1

STAT2

PG

Q2

VCC

Q1

DC Input

PackThermistor

Vcc

Half BridgeGateDrive

UCC27201

Vcc BiasSupply

TPS54060

bq24610/30

8~14V Vcc

Vcc

Current SenseINA169

2~3V Clamp

BufferLM358

VREF

RsnsL

C

Rs

Pre-chargeDeeply discharged

Battery

BTSTsetting

35~57VACNACP

ACDRV

CECE

The charger circuit have to do several modifications.The block diagram of HPA603 EVM:

Page 8: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

VCC bias supply solution

Function block: Vcc Bias supplyIt powers the charger IC-bq24610/30, external half bridge gate driver, current sense circuit and OMAMP buffer. And it is also used for charging up a deeply discharged battery. A switching Vcc bias power supply needs:• Operating from the maximum input voltage• An 8-14 V output voltage: It is set by the external

half bridge gate driver requirement• At least 200mA: It is derived from the sum of the

charging current for deeply discharged battery and the whole board current consumption.

For 60V input, the TPS54060 is selected to meet these three requirements.

Page 9: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

Modified Charger Block Diagram

Battery Pack

BATDRV

REGN

BTST

HIDRV

PH

LODRV

GND

SRP

SRN

VFB

VREF

ISET1

ISET2

ACSET

TS

TTC

STAT1

STAT2

PG

Q2

VCC

Q1

DC Input

PackThermistor

Vcc

Half BridgeGateDrive

UCC27201

Vcc BiasSupply

TPS54060

bq24610/30

8~14V Vcc

Vcc

Current SenseINA169

2~3V Clamp

BufferLM358

VREF

RsnsL

C

Rs

Pre-chargeDeeply discharged

Battery

BTSTsetting

35~57VACNACP

ACDRV

CECE

Half bridge gate drive solution

Page 10: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

Half bridge gate drive solution

Function block: Half Bridge Gate DriveIt receives the charger IC HIDRV and LODRV signal and drive the buck FET Q5 and Q6. The half bridge gate drive needs:

• 20% input voltage margin • Have two Complementary inputs to match HIDRV and LODRV output of bq24610.• Input logic high threshold need lower than 3V match the voltage level of bq24610/30’s HIDRV and LODRV output.• Reserve several resistors, caps and diode to adjust turn-on&off speed and dead time

For 60V input, the UCC27201 is selected to meet these three requirements.

HIDRV

PH

LODRV

PGND

Q2

Cinbq24610

Q1UCC27201UCC27201

Vcc

HI VDD

LI VSS

HBHOHSLO

R13D3

R14D4

C21

C22

R25

R26

Page 11: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

Modified Charger Block Diagram

Battery Pack

BATDRV

REGN

BTST

HIDRV

PH

LODRV

GND

SRP

SRN

VFB

VREF

ISET1

ISET2

ACSET

TS

TTC

STAT1

STAT2

PG

Q2

VCC

Q1

DC Input

PackThermistor

Vcc

Half BridgeGateDrive

UCC27201

Vcc BiasSupply

TPS54060

bq24610/30

8~14V Vcc

Vcc

Current SenseINA169

2~3V Clamp

BufferLM358

VREF

RsnsL

C

Rs

Pre-chargeDeeply discharged

Battery

BTSTsetting

35~57VACNACP

ACDRV

CECE

Current sense solution

Page 12: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

Current sense solution

Function block: Current senseIt is a high voltage bus current sensor or a current mirror circuit. It needs

• Set 1:1 ratio between Rsns Voltage and Rs voltage.

For battery voltage is upto 60V, the INA169 is selected to meet that requirement.

Rsns

Rs(R6)

1k

1kCurrent sense

Page 13: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

Modified Charger Block Diagram

Battery Pack

BATDRV

REGN

BTST

HIDRV

PH

LODRV

GND

SRP

SRN

VFB

VREF

ISET1

ISET2

ACSET

TS

TTC

STAT1

STAT2

PG

Q2

VCC

Q1

DC Input

PackThermistor

Vcc

Half BridgeGateDrive

UCC27201

Vcc BiasSupply

TPS54060

bq24610/30

8~14V Vcc

Vcc

Current SenseINA169

2~3V Clamp

BufferLM358

VREF

RsnsL

C

Rs

Pre-chargeDeeply discharged

Battery

BTSTsetting

35~57VACNACP

ACDRV

CECE

buffer solution

Page 14: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

Current sense buffer solutionFunction block: BufferThe SRP/SRN pin of charge IC has few milliampere

sink current. The current sense output may not have enough current capability. The buffer circuit needs:

• Keep the output voltage on SRP/SRN pin is same as Rs voltage

• Provides enough current (8mA) to drive SRP/SRN pin.

The LM358 is selected to meet these two requirements.

U1bq24610

Rs(R6)

R3SRN

Current senseSRP

RsnsL

BufferU5:LM358

Page 15: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

Modified Charger Block Diagram

Battery Pack

BATDRV

REGN

BTST

HIDRV

PH

LODRV

GND

SRP

SRN

VFB

VREF

ISET1

ISET2

ACSET

TS

TTC

STAT1

STAT2

PG

Q2

VCC

Q1

DC Input

PackThermistor

Vcc

Half BridgeGateDrive

UCC27201

Vcc BiasSupply

TPS54060

bq24610/30

8~14V Vcc

Vcc

Current SenseINA169

2~3V Clamp

BufferLM358

VREF

RsnsL

C

Rs

Pre-chargeDeeply discharged

Battery

BTSTsetting

35~57VACNACP

ACDRV

CECE

2~3V clamp circuit solution

Page 16: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

2~3V clamp circuit solutionFunction block: 2~3v Clamp circuitIf the SRP/SRN pin voltage is lower than 2V, the IC

runs at a short protection mode. The low side MOSFET is held off at that mode. The clamp circuit needs:

• Voltage is between 2~3V.• Can absorb the Rs current• Can support SRN pin sink current (8mA)

A simple 2~3V clamp circuit can be created from the bq24610’s 3.3V VREF.

bq24610Rs

(R6)

R27 C30

SRN

Current sense

VREF

VREF

RsnsL

Page 17: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

Modified Charger Block Diagram

Battery Pack

BATDRV

REGN

BTST

HIDRV

PH

LODRV

GND

SRP

SRN

VFB

VREF

ISET1

ISET2

ACSET

TS

TTC

STAT1

STAT2

PG

Q2

VCC

Q1

DC Input

PackThermistor

Vcc

Half BridgeGateDrive

UCC27201

Vcc BiasSupply

TPS54060

bq24610/30

8~14V Vcc

Vcc

Current SenseINA169

2~3V Clamp

BufferLM358

VREF

RsnsL

C

Rs

Pre-chargeDeeply discharged

Battery

BTSTsetting

35~57VACNACP

ACDRV

CECE

BTST setting

Page 18: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

BTST setting

Function block: BTST settingTo isolate PH, HIDRV and BTST pin. The PH pin is connected

to ground. BTST voltage needs:• Higher than 3V to keep correct gate logic. • Lower than 4V to keep LODRV send refresh pulse every

switching cycle. External half bridge gate will use that LODRV refresh pulse to charge its bootstrap cap.

A simply resistor divider from 6V REGN can set the BTST voltage easily.

bq24610R22

R21 C16

REGN

BTST

Page 19: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

Modified Charger Block Diagram

Battery Pack

BATDRV

REGN

BTST

HIDRV

PH

LODRV

GND

SRP

SRN

VFB

VREF

ISET1

ISET2

ACSET

TS

TTC

STAT1

STAT2

PG

Q2

VCC

Q1

DC Input

PackThermistor

Vcc

Half BridgeGateDrive

UCC27201

Vcc BiasSupply

TPS54060

bq24610/30

8~14V Vcc

Vcc

Current SenseINA169

2~3V Clamp

BufferLM358

VREF

RsnsL

C

Rs

Pre-chargeDeeply discharged

Battery

BTSTsetting

35~57VACNACP

ACDRV

CECE

BTST setting

Page 20: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

Pre-condition deeply discharge battery solutionFunction block: Pre-condition deeply discharge battery

When battery voltage is deeply discharged lower than 3V, the current sense circuit can not work properly. The pre-condition circuit needs:

• The pre-condition current can bring a deeply discharged battery voltage higher than 3V.

• The pre-condition current is lower than bias supply output capability.

A simply resistor (R46 and R47) and diode (D8) pre-charge path can pre-charge the battery voltage up to the 3V that is a minimum operating voltage range of the current sense circuit. A comparator compares the battery voltage with 3.3Vref. If the battery voltage is higher than 3.3V, the CE is pulled to high and charger is enabled.

TPS54060VCC bias supply

D8

R31

R46

R47VREF

VREF

BAT

R10

D7

CE LM2903

Page 21: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

The calculation tool of L, C value and other parameters

The calculation tool of L, C value and other parameters can be found in http://www.ti.com/litv/zip/sluc175c

Battery charge voltage setting

Battery pre-charge/termination current setting

Battery fast-charge current setting

Iripple_Lout_Vripple

LC output filter resonant frequency

Fast charge timer

TS resistor network

Page 22: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

EVM and Application note information

The high voltage charge EVM (HPA603) and user’s guide (SLUU447) are available.

Application notes (SLUA580) is released: A practical high voltage charger solution with existing bq24610 charger IC.

Page 23: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

Test Results on HPA603 EVM

23

Page 24: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

Test result on HPA603 EVM

• 1 ISET1 control IBAT– 1.1 ISET1 vs IBAT waveform– 1.2 ISET1 transient– 1.3 ISET1 accuracy

• 2 Switching waveforms

• 3 Charger start-up or shut-down with CE control

• 4 Battery insertion and removal

• 5 soft start

• 6 efficiency

Page 25: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

Modified Charger Block Diagram

Battery Pack

BATDRV

REGN

BTST

HIDRV

PH

LODRV

GND

SRP

SRN

VFB

VREF

ISET1

ISET2

ACSET

TS

TTC

STAT1

STAT2

PG

Q2

VCC

Q1

DC Input

PackThermistor

Vcc

Half BridgeGateDrive

UCC27201

Vcc BiasSupply

TPS54060

bq24610/30

8~14V Vcc

Vcc

Current SenseINA169

2~3V Clamp

BufferLM358

VREF

RsnsL

C

Rs

Pre-chargeDeeply discharged

Battery

BTSTsetting

35~57VACNACP

ACDRV

CECE

The charger circuit have to do several modifications.The block diagram of HPA603 EVM:

Page 26: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

1.1 ISET1 vs IBAT waveform

• IBAT are proportional to ISET1. The ratio follows the datasheet equation.

ISET1

IBAT

Michael Day
need scales
Page 27: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

1.2 ISET1 transient 2

• ISET1 from 1V to 2V ( CCM)

ISET1

IBAT

Page 28: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

1.3 ISET1 accuracy

ISET1 vs Vsns

0

2

4

6

8

10

12

14

16

0 0.5 1 1.5 2 2.5

ISET1 (V)

Vsn

s er

ror

(%)

Series1

Page 29: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

2 Switching waveforms

Inductor current

Switching node

High side gate

High side gate

Page 30: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

3. Charger start-up or shut-down with CE control

Switching node

Inductor current

CE

VBAT

Page 31: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

4 Battery removal and insertion

Ch1 (yellow): VinCh2 (blue): VbatCh3 (pink): PH4 (green): IL

VBAT

VINSwitching node

Inductor current

Page 32: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

5 soft start

Ch1 (yellow): Vin; Ch2 (blue): Vbat; Ch3 (pink): PH; ch4 (green): IL

Inductor current

Switching node

VIN

VBAT

Page 33: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

6 efficiency

Efficiency and power dissipation

0.0%

10.0%

20.0%

30.0%

40.0%

50.0%

60.0%

70.0%

80.0%

90.0%

100.0%

0 1 2 3 4 5 6

Charging current (A)

Eff

icie

ncy

0

1

2

3

4

5

6

7

8

Po

wer

dis

sip

atio

n (

W)

48Vin; 30Vbat

power dissipation

Page 34: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

More Higher input voltage charger:

100Vin_max and 16-cell

34

Page 35: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

Higher input range solutionIf need a even high voltage, for example: 16 cell battery charger with 80V input. Please update those components and circuits:

Change list:VCC bias supply Current sense

circuitR23(Vbatsetting)

L1 value(Keep ΔIconstant)

Power FET

bq24610EVM(HPA603EVM)

TPS54060 INA169 R23:464k

22uH 80V FET Si7852

80Vin/16cellLi-ion battery Charger

Any 100V input; 10Vout@150mA bias supply

Current mirror:ZDS1009

R23:953k

47uH 100V FET SiR846

Changer requirementOutput Input

bq24610EVM(HPA603EVM)

8-cell Li-ion battery8x4.2=33.6V

Maximum 60V input

80Vin/16cellLi-ion battery Charger

16-cell Li-ion battery16x4.2=67.2V

Maximum 100V input

Page 36: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

SMBus High voltage charger solution

36

Page 37: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

SMBus High Voltage Charger Solution

Battery Pack

PVCC

BOOT

UGATE

PHASE

LGATE

VREF

CE

ACOK

Q5

DCIN

Q4

DC Input

SMBUS

Half BridgeGateDrive

UCC27201

Vcc BiasSupply

TPS54060

bq24747

8~14V Vcc

Vcc

Current SenseINA169

2~3V Clamp

BufferLM358

VREF

RsnsL

C

Rs

Pre-chargeDeeply discharged

Battery

BTSTsetting

CSSN

CSSPACINVDDSMB

VICM

ICOUTICREF

GND

CSOP

CSON

SCLSDA

VFB

1MΩ

R9 7.5k

R10 20k

R11 200k

C22 130p

C21 2000p

C23 51p

EAO

EAI

FBO

Page 38: TI Information – Selective Disclosure 2010 Dallas BMS Deep Dive High voltage charger solution Li, Wang: wang-li@ti.comwang-li@ti.com MGambrill, Michael:

TI Information – Selective Disclosure2010 Dallas BMS Deep Dive

•Thank you

•Questions