to-247-4l half-bridge evaluation board product specification · 2021. 3. 20. · to -247 4l half...

TO-247-4L

Half-Bridge Evaluation Board

Product Specification

Notice

www.rohm.com HVB01E © 2018 ROHM Co., Ltd. All rights reserved.

＜High Voltage Safety Precautions＞

◇ Read all safety precautions before use

Please note that this document covers only the SiC MOSFET evaluation board

(P02SCT3040KR-EVK-001) and its functions. For additional information, please refer to

the Operation Manual.

To ensure safe operation, please carefully read all precautions before

handling the evaluation board

Depending on the configuration of the board and voltages used,

Potentially lethal voltages may be generated. Therefore, please make sure to read and observe all safety precautions described in

the red box below.

Before Use [1] Verify that the parts/components are not damaged or missing (i.e. due to the drops). [2] Check that there are no conductive foreign objects on the board. [3] Be careful when performing soldering on the module and/or evaluation board to ensure that solder

splash does not occur. [4] Check that there is no condensation or water droplets on the circuit board. During Use [5] Be careful to not allow conductive objects to come into contact with the board. [6] Brief accidental contact or even bringing your hand close to the board may result in

discharge and lead to severe injury or death. Therefore, DO NOT touch the board with your bare hands or bring them too close to the board. In addition, as mentioned above please exercise extreme caution when using conductive tools such as tweezers and screwdrivers. [7] If used under conditions beyond its rated voltage, it may cause defects such as short-circuit or,

depending on the circumstances, explosion or other permanent damages. [8] Be sure to wear insulated gloves when handling is required during operation.

After Use [9] The ROHM Evaluation Board contains the circuits which store the high voltage. Since it stores the

charges even after the connected power circuits are cut, please discharge the electricity after using it, and please deal with it after confirming such electric discharge.

[10] Protect against electric shocks by wearing insulated gloves when handling.

This evaluation board is intended for use only in research and development facilities and

should by handled only by qualified personnel familiar with all safety and operating

procedures.

We recommend carrying out operation in a safe environment that includes the use of high

voltage signage at all entrances, safety interlocks, and protective glasses.

http://www.rohm.com/

1/17

© 2017 ROHM Co., Ltd. No. 60AP001E Rev.001

2017.4

© 2019 ROHM Co., Ltd. No. 62UG018E Rev.001

Dec. 2019

User’s Guide

SiC MOSFET Evaluation Board

TO-247- 4L Half-Bridge Evaluation Board

Product Specification

For SiC MOSFET evaluation we are working with fast voltage and current slew rates, thus an appropriate evaluation environment is required.

Unfortunately, it is almost impossible to get an evaluation board which fulfills all the required conditions when considering a device’s new package.

Therefore, we have developed an evaluation board based on the most common circuit configuration known as a half-bridge circuit. In order to

obtain appropriate evaluation conditions with simple preparation, this board is equipped with a driver circuit, an isolated power supply for the driver

circuit, an over current protection circuit, Gate signal protection circuit and so forth.

In this application note the evaluation board operational guide for the TO-247- 4L package will be explained. Additionally the detail information

regarding operation of this evaluation board is described in the other application note. (TO-247-4L Half-Bridge Evaluation Board Operation Manual:

No.61UG047E Rev.001）

１．Appearance

Figure 1 shows a top view picture of this evaluation board. Dimensions and weight are shown in Table 1.

Figure 1. Top view picture

Length 150 mm

Width 150 mm

Height 65 mm

Weight 0.335 kg

Table 1. Dimensions and Weight

2/17

User’s Guide TO-247-4L Half-Bridge Evaluation Board


Dec. 2019

２．Main Features

This evaluation board for SiC MOSFET can demonstrate switching characteristics of two types of package such as TO-247-4L and

TO-247N.

Main features are:

Alternative mounting either TO-247-4L or TO-247-3L package

Operate only by +12V power supply

Maximum 150A double-pulse test

Maximum 500 kHz switching operation

Several power topologies supported (Buck, Boost, Half-Bridge)

Built-in isolated adjustable output power supply for gate driving (output range is +12V up to +23V.)

Alternative easy set up turn-off bias voltage either zero bias or minus bias (-2V up to -4V)

Safety function to prevent both upper and lower MOSFETs from turning on at the same time

Over current protection function (DESAT, OCP)

３．Order specification

Order form is as below. It is configured by board name, device Name, and serial number.

Minimum order quantity (MOQ) of this evaluation kit is just one piece.

Order specification is shown in Table1.

Table2. Order specification

Device Package Turn-off Bias voltage

Order specification

SCT3040KR TO-247-4L 0V P02SCT3040KR-EVK-001

SCT3080KL TO247-3L 0V P02SCT3080KL-EVK-001

SCT2080KE TO247-3L -2V P02SCT3080KE-EVK-001

SCT3040KR 2 0

Board Name

E V K 1 0 ー - 0

Device Name Serial Number

P -

3/17



Dec. 2019

４．Functional block diagram

Functional block diagram is shown in Figure 2. Four functions are possible, and each function has an HS_xxx or LS_xxx description.

It means “HS” is upper arm, “LS” is lower arm. Functions without “HS” or “LS” are used in both arms.

Driving driving circuits to operate the switching power device

Logic logic circuit to control input TTL level signals

Protection protecting circuits to prevent damage to the switching power device

Power component high voltage and high current applied components

Table 3 has functional details. Each main function has several sub-functions.

Input or output signals are defined in Table 4.

Figure 2. Function block diagram

GSELPGND

HVdc

DUT_HS

DUT_LS

OCP LS-CS

HS-GADJ

LS-GADJ

HS_DESAT

LS_DESAT

IN_H_CLK

IN_L_CLK

IN_CLK

CSEL

ENABLE

LDO+5Vcc

Vcc1

DCR

Vsw

DTS&

STP

VccICAP SNB

SGND

PGND

PGNDPGND PGND

SGND

HS_GD

PRIMERY SECONDERY

BD7F200

HSGate Power

LS_GD

ActiveClamp

LS Gate Power

Active Clamp

BM6101

BD7F200

BM6101

Vcc1

HS_DSSEL

LS_DSSEL

VEE2

VCC2

VEE2

VCC2

GNDConnect

PGND

HSFID

Vcc1

Vcc1

Vcc1

LSFID

HS_GSC

LS_GSC

HS_ALOW

LS_ALOW

UVLO

UVLO1

UVLO2

UVLO1

UVLO2RCD-SNB

RCD-SNB

HS-VEESEL

HS-VEESEL

4/17



Dec. 2019

Table 3. Functional details

Function Sub-function Symbol Detail

Driving Gate Driver GD Gate driving logic (included in BM6101FV-C)

Gate Power GP Power controller and components for gate driving (includes in BD7F200FV-C)

Gate Adjust GADJ Adjustment of gate resistor for MOSFET switching speed Individual adjustment of turn on and turn off

Driver Source Select DSSEL Source return route selection by TO-247N(3L) orTO-247-4L(4L)

Logic Low Drop-Out regulator LDO Power for logic circuit (included in BD450M2WEFJ)

Clock Select CSEL Set up “Single-clock mode” or “Dual/DP-clock mode”

Dead Time setup DTS Dead-time between HS and LS adjustment circuit (available in Single-clock mode)

Shoot Through Prevention STP Circuit preventing HS and LS simultaneously ON (available in Single-clock mode)

Protection

Gate Surge Clamp GSC Eliminating surge voltage between gate and source Positive or negative surge is clamped by Schottky barrier diode

(SBD) or MOSFET.

VEE2 Select VEESEL VEE2 power set up circuit 0V or -2V of turn off bias is selected by jumper pin.

GND Select GSEL GND level selection of OCP circuit “VEE2 Select” condition determines GND level of OCP circuit.

Over Current Protection OCP Over current protection circuit (LS source current sensing) Detected level is adjustable with potentiometer.

Device Under Test DUT SiC MOSFET or SiC SBD in HS and LS for evaluation

Desaturation Circuit DESAT Over current detection circuit (individual device sensing) Detected VDS voltage is adjustable by chip resistor Detect unmatched logic signal to gate signal

Fault Indicator FID Indicator of OCP and DESAT status Red LED turns on when FLT signal is high.

Current Sense CS Current Sense resistor circuit (4.7mΩ sensing resistor)

Discharge Resistor DCR Discharge resistor circuit for input capacitor (68 kohm × 6 series)

Power component

Input Capacitor ICAP Input smoothing capacitor

Snubber Capacitor SNB Snubber capacitor for DC link power line

RDC Snubber Circuit RCD_SNB Non-discharged RDC snubber circuit for individual MOSFET of HS and LS

Device Under Test DUT MOSFET or SBD in HS and LS for evaluation

5/17



Dec. 2019

Table 4. Definition of Input and Output signals

Connector Pin signal I/O Details

CN201 01 ENABLE I Driver IC Enable signal. When signal is “L”, CLK signal is available. Individual control of HS and LS is invalid.

02 SGND -- Signal GND

03 IN_CLK I HS and LS MOSFET drive signal with reversal. When signal is “H”, HS side MOSFET is ON and LS side MOSFET is OFF. When signal is “L”, HS side MOSFET is OFF and LS side MOSFET is ON. When Single-clock mode, available. When Open, level is “L”.

04 IN_L_CLK I LS side MOSFET drive signal. When signal is “H”, MOSFET is ON. When DUAL/DP-clock mode, available. When Open, level is “L”.


06 IN_H_CLK I HS side MOSFET drive signal. When signal is “H”, MOSFET is ON. When DUAL/DP-clock mode, available. When Open, level is “L”.

07 HS_ALOW I Exclusive OR function signal for “IN_H_CLK”

08 +5Vcc -- Internal logic power output. Available supply current is max. 20mA.

09 LS_ALOW I Exclusive OR function signal for “IN_H_CLK”


CN202 01 Vcc -- Driver IC and internal logic power. (No need for gate drive power)


JP1 01 DUAL/DP I Dual/DP-clock Mode signal. When “L”, IN_H/L_CLK signals are available. When Open, level is “H”.


03 SINGLE I Single-clock Mode signal. When “L”, IN_CLK signal is available. When Open, level is “H”.

T1 -- HVdc -- High voltage input terminal. In Buck topology, input function. In Boost topology, output function.

T2, T4 -- Vsw -- HS side MOSFET source terminal and LS side MOSFET drain terminal. Internally connected between them

T3, T5 -- PGND -- Power GND Possible to connect to SGND. (default is connected)

6/17



Dec. 2019

５．Electrical Characteristics

Table 5 lists major absolute maximum ratings of this evaluation board. This table shows limitations which should not be

exceeded. You should pay attention to apply voltage or load within these limitations for safe and non-damaged operation.

Table 5. Absolute Maximum Ratings

Parameter Symbol Min. Max. Unit Remarks

Input Voltage DC VHVdc 1200 V

Input Voltage slew rate SRHVdc 50 V/μs Limited by input film capacitor

Output Voltage VOUT 1200 V

Vcc Supply Voltage VCC 5.0 20 V For isolated gate power and internal logic

Input Signal Voltage VENABLE

VHS_ALOW VLS_ALOW

VIN_H_CLK VIN_L_CLK VIN_CLK

- 0.3 5.3 V

+5Vcc Output Current I5Vcc 20 mA Auxiliary Power Source

Storage Temperature TSTG -10 40 ℃ Limited by input film capacitor

Table 6 shows the recommended operating conditions of this board.

Table 6. Recommended Operating Conditions and Electrical Characteristics

Parameter Symbol Min. TYP. Max. Unit Remarks

Input Voltage DC VHVdc

900 V

Output Voltage VOUT

900 V

Vcc Supply Voltage VCC 10 12 15 V

Output Current IOUT

30 A

Double Pulse Current IDP

150 A

CLK signal Pulse width tPWDT 10 μs LS only, 0V bias

CLK Signal frequency fIN_xx_CLK

500 kHz

Input signal Low level voltage VIN_H_CLK VIN_L_CLK VIN_CLK VHS_ALOW VLS_ALOW VENABLE

0

1.5 V

Input signal High Level voltage 3.5 5.1 V

Operating Temperature TOPR 25

℃

Cumulative operating Time tCUM 100

Hrs.

7/17



Dec. 2019

６．Schematics

P02SCT3040KR-EVK-001 schematics with SCT3040KR are shown in Figure 3.

OC

PR

ed

SML-

E12

U8

W

LS_F

AU

LT In

dic

ato

r(L

atch

ed)

HS_

FAU

LT In

dic

ato

r(L

atch

ed)

HV

dc

PG

ND

GN

D1

NC

INB

FIL

TE

RS

VC

C1

FLT

INA

EN

A

TE

ST

GN

D1

VE

E2

OU

T2

OU

T1

VT

SIN

VC

C2

VR

EG

GN

D2

SC

PIN

PR

OU

T

VE

E2

BM

6101F

V-

CE

2

0110

11 20

TP3

01

47k Ω

CLK

Se

lect

1pin側

: D

ual-C

LK

/ D

P M

ode

3pin側

:Sin

gle

-CLK

IN_H

_CLK

IN_C

LK IN_L

_CLK

HS

LS_A

LOW

VC

C1

VC

C1

+5V

ON

Gre

en

LED

SML-

D1

2P

8W

100 Ω

1/8

W

ENA

BLE

SGN

D

47

kΩ

1/8

W

22

0 Ω

1/8

W

0 Ω

1/1

0W

15k Ω

68 k

Ω

0.1

uF

1uF

35V

1608

4.7

uF

35

V,2

01

2

0.1

uF

4.7

k Ω

5%

1/4

W

RF

N1

LA

M7

S7

00

V 0

.8A

RF

N1

LA

M7

S7

00

V 0

.8A

RB

16

8V

AM

15

0T

R1

50

V 1

A

10

uF

50

V3

21

6

4.7

uF

35V

2012

R65

15

kΩ

10uF

25V

2012

22

uF

25

V3

21

6

0Ω

470Ω

+5V

cc

VC

C1 10uF

25V

2012

15

0Ω

3/4

W

10

uF

50

V3

21

6

22uF

25V 3216

2.2

k Ω

2.2

k Ω

BD

45

0M

2W

EF

J-C

E2

HT

SO

P-8

5V

/0.2

A

1uF

35V

1608

4.7

uF

35

V,2

01

2

TF

ZV

TR

2.0

B2

0m

A 0

.5W

150Ω

3/4

W

100 Ω

1/8

W

1.5

kΩ

IC3

IC1

IC2

01

IC1

IC2

VC

C1

IC2

※0.0

63W

(1005),

5%

in

case o

f no in

dic

atio

n

※R

esis

tor

of siz

e is b

elo

w

1/1

6W

:(1005 s

ize),

1/1

0W

:(1608 s

ize)

1/8

W：(

2012 s

ize),

1/3

W,2

/3W

:(3225 s

ize)

1/4

W：(

3216 s

ize),

3/4

W:(

1632 s

ize)

1W

~2W：(

6432 s

ize）

NO

P

NO

P

68kΩ

2W

MLC

C0.4

7uF

630V

MLC

C0.4

7uF

630V

Film

10uF

, 1250V

MLC

C0.4

7uF

, 630V

HV

aliv

eR

ed L

ED

SML-

D1

2U

8W

55

33IC

4

INA

_HS

IN_C

KL_

SEL

2.2

k Ω

47

mΩ

1/2

W

TP3

02

R1

R7

U2

Vsw

LE

D201

D58

4.7kΩ,1/8W

10

00

pF

16

08

※N

o in

dic

atio

n C

apacitors

is

50V

, 1005 s

ize

D53

D54

D5

5

D56

Q51

Q151

R5

6

D153

D154

R57

R321~

R330

C304

C305

C302 C

303

C306

C307

R306

R307

R309

R310

R308

T1

T2

T3

LE

D301

R53

C51

C56

C5

3

C59

C61

ZD

51

R68

R51

R52

R55

R342

＞＞＞＞＞＞＞＞＞＞

CN

201

SGN

D

+5V

cc

ENA

BLE

IN_H

_CLK

IN_L

_C

LK

IN_C

LK

LS_

ALO

W

HS_

ALO

W

R4

C4

C3

R3

R70

R1

1

R60

R61

R1

2

C12

R13

C13

D1

D59

C6

3R62

C201

D201

R58

R301

R302

R303

R304

R305

R201

R212

R5

R105

C202

C203

C205

C5

C6

CN

202

JP

201

JP

202

1 10

1 3D

57

D157

NO

P

NO

P

15

0A

,10

0u

s

15

0A

,10

0u

s

TP5

4

TP1

4.7

uF

35V

2012

C54

Sho

t Th

rou

gh P

reve

nti

on

Cir

cuit

Dea

d-t

ime

setu

p

LS

IC102

IC5

IC101

IC103

47

0 Ω

1/8

W

47

0 Ω

1/8

W

100p F

100p F

R2

21

C2

21

R2

22

C2

22

DTS

TP2

03

TP2

01

RF

30

2L

AM

2S

20

0V

3A

2.2

k Ω

R210

R350

R3

49

1k Ω

10

0p

F

C308

2S

CR

523E

B

Q303

RV

301

470 Ω

1/8

W

R331

1.5

kΩ

Q3

01

C3

13

1.5

k Ω

6.8

k Ω

10

0p

F

1.5

k Ω

1.5

kΩ

2S

CR

52

3E

B

2S

CR

52

3E

B

2S

CR

52

3E

B

Q302

Q3

04

R3

48

R3

47R

346 1

000pF

1608

4.7

k Ω

R343TH

1

TH

2

C312

C3

11

3.3

kΩ

R345

C310

3.3

Ω 1

/4W

3.3

Ω 1

/4W

R7

2100 Ω

1/8

W

R54

PG

ND

1M

Ω1/3

W

R334

1M

Ω1/3

W

R335

1M

Ω1/3

W

R332

1M

Ω1/3

W

R333

TP2

02

＞＞

SGN

D

Vcc

1 2

1

3

2

（右

回りで大きく）

Q3

05

TP3

03

Cu

rren

t Li

mit

Ad

just

4.7

uF

35V

,2012

C57

0.1

uF

C58

0.1

uF

C2

C55

1u

F3

5V

16

08

C1

NO

P

NO

P

NO

P

NOP

NO

P

NOP

R341

4.7

kΩ

10uF

25V

2012

C2

18

2S

AR

52

3E

B

100 Ω

1/8

W

R353

10uF

25V

2012

C3

09

R352

1.5

k Ω

C64

0.4

7Ω

3/4

W

10

00

pF

16

08

C3

14

NO

P

TP5

2

TP5

1

D51

RB

16

0M

M-4

0T

R4

0V

1A

NO

P NO

P

PG

ND

PG

ND

PG

ND

R7

4

D52

8.2

kΩ

100pF

Q53

VC

C1

0.1

uF

AG

ND

SD

X/E

N

CO

MP

RE

F

SW

PG

ND

FB

VIN

BD

7F

200E

FJ-L

BE

2

05

08

01

04

U1

TFZVTR15B20mA 0.5W

09

FIN

15

kΩ

LS F

AU

LTR

ed L

ED

SML-

D1

2U

8W

47

0Ω

10kΩ

2.2

kΩ

470Ω

10kΩ

2S

CR

523E

B50V

0.1

A 2S

CR

523E

B50V

0.1

A

10kΩ

LE

D2

02

R2

09 R

204

R205

R207

R203

R202

Q202

Q201

10

kΩ

R2

06

Q2

03

2S

CR

523E

B50V

0.1

A

R208

10kΩ

100pF

C206

10

uF

25

V2

01

2

C2

04

HS_

ALO

W2.2

k Ω

R6

HS

VE

E S

ele

ct

1p

in側

:0V

3p

in側

::-2

V

VIN

SE

NS

E

VD

D

CS

O

VA

DJ

VS

S

ON

/OF

F

VO

UT

S-1

9700A

00A

-E8

05

08

01

04

U51

NO

P

0 Ω

1/4

WN

OP

R7

1

10k Ω

RV

51

1

3

2

（右回りで大きく）

RB

16

0V

AMｰ

60

TR

60

V 1

A

R59

0.4

7u

F5

0V

16

08

100Ω

1/8

W

4.7

kΩ

1/4

W

C5

2

R73

47k Ω

0.1

uF

4.7

k Ω

5%

1/4

W

D1

55

D1

56

R156

C159

R155

C1

58

Q153

0.1

uF

RB

160M

M-4

0T

R40V

1A

R64

10

00

pF

16

08

C60

C11

C62R

75

10

00

pF

16

08

2.2

k Ω

GN

D1

NC

INB

FIL

TE

RS

VC

C1

FLT

INA

EN

A

TE

ST

GN

D1

VE

E2

OU

T2

OU

T1

VT

SIN

VC

C2

VR

EG

GN

D2

SC

PIN

PR

OU

T

VE

E2

BM

6101F

V-

CE

2

0110

11 20

47

kΩ1

5k Ω

68kΩ

1uF

35V

1608

4.7

uF

35

V,2

01

2

RB

168V

AM

150T

R150V

1A

10uF

50V

3216

4.7

uF

35V

2012

R1

65

15

kΩ

22

uF

25

V3

21

6

0Ω

RB

160M

M-4

0T

R40V

1A

15

0Ω

3/4

W

10uF

50V

3216

4.7

uF

35V

,2012

TF

ZV

TR

2.0

B2

0m

A 0

.5W

15

0Ω

3/4

W

100 Ω

,1/8

W

1.5

kΩ

INA_LS

R1

64

U102

D1

58

4.7kΩ,1/8W

10

00

pF

16

08

10

00

pF

16

08

R157

R153

C151

C156

C1

53

C161

C1

60

ZD

151

R168

R151

R152

R104

C104

C103

R103

R170

R1

11

R160

R161

C162

R1

12

C112

R1

13

C1

13

D1

01

D1

59

C163R162

R158

TP1

54

TP1

01

4.7

uF

35

V2

01

2

C154

3.3

Ω 1

/4W

3.3

Ω 1

/4W

R1

72

R1

75

4.7

uF

35V

,2012

C157

0.1

uF

0.1

uF

C1

02

C155

1u

F3

5V

16

08

C1

01

10

00

pF

16

08

NO

P

NO

P

C164

0.4

7Ω

3/4

W

TP1

52

2.2

k Ω

D151

RB

16

0M

M-4

0T

R4

0V

1A

R1

74

D152

8.2

kΩ

100pF

VC

C1

0.1

uF

AG

ND

SD

X/E

N

CO

MP

RE

F

SW

PG

ND

FB

VIN

BD

7F

200E

FJ-L

BE

2

05

08

01

04

U10

1Z

D1

01

TFZVTR15B20mA 0.5W

09

FIN

15

kΩ

2.2

k Ω

R106

VIN

SE

NS

E

VD

D

CS

O

VA

DJ

VS

S

ON

/OF

F

VO

UT

S-1

9700A

00A

-E8

05

08

01

04

U15

1

NO

P

0 Ω

1/4

WN

OP

R1

71

10k Ω

RV

151

1

3

2

（右回りで大きく）

RB

160V

AM

-60T

R60V

1A

R159

0.4

7uF

50V

1608

100 Ω

,1/8

W

4.7

kΩ

1/4

W

C1

52

R173

NO

P

Vcc

Vcc

Vcc

Vcc

VC

C1

VC

C1

ENA

BLE

2.2

k Ω

R211

ENA

BLE

LS_F

AU

LT

HS_

FAU

LT

C10

R8

39k Ω

15k Ω

100 Ω

1/8

W

3.9

k Ω

R10

R9 0 Ω0.1

uF

0.1

uF

R1

07

C1

11

C1

10

R1

08

39

k Ω

15

k Ω

3.9

k Ω

R1

10

R1

09

0 Ω0.1

uF

0.1

uF

PG

ND

1000pF

1608

R344

1.5

kΩ

10

0Ω

1/8

W

R154

1/8

WR

35

8N

OP

TP1

51

IC105

IC104

IC2

03

IC2

02

IC2

04

IC2

07

IC2

08

IC2

05

IC2

06

R311

VC

C

CT

L

NC

GN

D

NC

NC

NC

VO

UT

04

01

08

05

U201

IC3

5

IC4

5

IC5

5

IC101

5

IC104

5

IC105

5

IC102

5

IC103

5

C2

07

0.1

uF

25

V0

.1u

F 2

5V

0.1

uF

25

V0

.1u

F 2

5V

0.1

uF

25

V0

.1u

F 2

5V

0.1

uF

25

V0

.1u

F 2

5V

IC201

5

IC202

5

IC203

5

IC204

5

IC207

5

IC208

5

IC205

5

IC206

5

C7

C8

C9

C1

05

C1

08

C1

09

C1

06

C1

07

0.1

uF

25

V0

.1u

F 2

5V

0.1

uF

25

V0

.1u

F 2

5V

0.1

uF

25

V0

.1u

F 2

5V

0.1

uF

25

V0

.1u

F 2

5V

0.1

uF

25

V0

.1u

F 2

5V

C2

08

C2

09

C2

10

C2

11

C2

12

C2

13

C2

14

C2

17

10uF

25V

2012

NA

ND

: B

U4S

11

G2

(IC

1,I

C2

,IC

3,I

C4

,IC

10

1,I

C102

, IC

10

3,I

C10

4,I

C20

3,I

C20

4)

INV

: B

U4S

U6

9G

2 (

IC5,I

C1

05

,IC

20

1,I

C20

2,I

C20

7, IC

20

8,I

C20

9,I

C21

0)

Sh

um

itt

INV

: B

U4S

58

4G

2

(IC

20

5,I

C20

6)

3.9

k Ω R

101

3.9

k Ω

ZD

1

C14

0.1

uF

C1

14

0.1

uF

4.7

k Ω

R63

4.7

k Ω R163

15

0A

,10

0u

s

0 Ω

1/1

0W

R178

0 Ω

1/1

0W

R78

RS

R0

30

N0

6T

L6

0V

3A

RS

R0

30

N0

6T

L6

0V

3A

RB

160V

AM

-60T

R, 60V

1A

RB

16

0V

AMｰ

60

TR

60

V 1

A

1/8

W

TP5

3

TP1

53

1/1

0W

1/1

0W

R77

0 Ω

1/4

W

NO

P

Q52

NO

P

Q152

NO

P

R177

0 Ω

1/4

W

NO

P

NO

P

1/8

W

33

33

33

33

33

33

33

33

IC2

10

IC2

09

IC209

5

IC210

50

.1u

F 2

5V

0.1

uF

25

V

C2

15

C2

16

33

Vsw

T4

PG

ND

T5

R2

0 Ω

1/1

0W

0 Ω

1/1

0W

R102

1/8

W 1/8

W

1/8

W

NO

P

NO

P

C65

C66

10

uF

50

V3

21

6NO

P

NO

P10

uF

50

V3

21

6

C166

C1

65

10uF

50V

3216

10uF

50V

3216

NO

P

NO

P

CX

52

CX

51

CX

152

CX

151

HS

FAU

LTR

ed L

ED

SML-

D1

2U

8W

47

0Ω

10kΩ

2.2

kΩ4

70Ω

10kΩ

2S

CR

523E

B50V

0.1

A 2S

CR

523E

B50V

0.1

A

10kΩ

LE

D2

32

R2

39 R

234

R235

R237

R233 R

232

Q232

Q231

10kΩ

R236

Q2

33

2S

CR

523E

B50V

0.1

A

R238

10kΩ

100pF

C220

1/8

W

1/8

W

SW

20

2S

MT

E3-0

1E

-Z

134

470 Ω

1/8

W

R2

14

HS_

FAU

LT

C223

0.1

uF

C219

0.1

uF

6.8

kΩ

R243

6.8

kΩ

R213

Q204

Q234

2

(Nonlo

ck)

HS

RES

ET

R354

LE

D3

02

4.7

kΩ

Q3

06

2S

CR

52

3E

B

1.5

kΩ

R3

56

2S

CR

523E

B50V

0.1

A

2S

CR

523E

B

SW

20

1S

MT

E3-0

1E

-Z

134

2

(Nonlo

ck)

LS RES

ET

SW

30

1

SM

TE

3-0

1E

-Z

134

2

(Nonlo

ck)

E

E

E

OC

PR

ESET

1/4

W

R3

55

1.5

kΩ

VC

C1

VC

C1

VC

C1

RB

16

0M

M-4

0T

R4

0V

1A

RB

16

0M

M-4

0T

R4

0V

1A

RB

16

0M

M-4

0T

R4

0V

1A

D202

D203

D204

2.2

kΩ

R215

2.2

kΩ

R245

3.3

kΩ

R246

3.3

kΩ

R216

C224

R2

18

R2

17

R2

19

68kΩ

10kΩ

10kΩ

1uF

, 35V

1608

4.7

kΩ

10

kΩ

1.5

kΩ

R3

57

R3

40

Q3

07

2S

AR

52

3E

B

VC

C1

Q2

51

Q2

52

2S

CR

523E

B50V

0.1

A

2S

AR

523E

B50V

0.1

A

2.2

kΩ

R2

51

3.9

kΩ

R2

52

4.7

kΩ

R2

53

1.5

kΩ

R2

54

C251 1u

F3

5V

,16

08

1/8

W

47

0 Ω

1/8

W1

/8W

1/8

W

R359

10

kΩ

R2

55

VC

C1

VC

C1

R360

5m

Ω5W

NO

P

TF

ZV

TR

2.0

B2

V 2

0m

A 0

.5W

ZD

52

ZD

53

TF

ZV

TR

22

B2

2V

5m

A 0

.5W

TF

ZV

TR

2.0

B2

V 2

0m

A 0

.5W

ZD

152

ZD

153

TF

ZV

TR

22

B2

2V

5m

A 0

.5W

LE

D51

6 5 3 2

10

139

EE

2225

04398-T

256

8T

8T

6T

1211

432T

TX

10

1

178 14

6 5 3 2

10

139

EE

2225

04398-T

256

8T

8T

6T

1211

432T

TX

1

178 14

10

00

pF

16

08

LE

D151

SML

-D1

2P

8W

SML

-D1

2P

8W

RB

160V

AM

-60T

R, 60V

1A

10

00

pF

16

08

C6

7N

OP

10

00

pF

16

08

C1

67

NO

P

33nF

1000V

5750

33nF

1000V

5750

C168

D1

68

D1

69

RF

N1

LA

M7

S7

00

V 0

.8A

R179

10Ω

2/3

W3225

R180

10Ω

2/3

W3225

10Ω

2/3

W3225

C68

R79

R80

D6

8D

69

RF

N1

LA

M7

S7

00

V 0

.8A

trr=

45

ns

R361

47

0 Ω

1/8

W

R363

R362

0 Ω

1/4

W

0 Ω

1/4

WR

365

R364

0 Ω

1/4

W

0 Ω

1/4

W

NOP

NOP

R81

R181

10Ω

2/3

W3225

NO

PN

OP

NO

PN

OP

NO

P

NO

P

NO

P

NO

P

C3

15

100pF

NO

P

0 Ω

1/4

W

3.3

Ω 1

/4W

3.3

Ω 1

/4W

0 Ω

1/4

W

3.3

Ω 1

/4W 3.3

Ω 1

/4W

スルーホール

スルーホール

JP

51

31

LS

VE

E S

ele

ct

1p

in側

:0V

3p

in側

::-2

VJP

151

31

JP

52

JP

152

R3

66

10

Ω

NO

PN

OP

NO

P

NO

P

C1

15

0.1

uF

50

V

C1

5

0.1

uF

50

V

H

S

L

S

Fig

ure

3.

P02SCT3040KR

-EV

K-0

01 S

chem

atics

8/17



Dec. 2019

７．BOM

Table 7. Bill of Materials

Device Mounted Symbol Parts Number Values Manufacture Package Size [mm]

PCB -- -- PCB002P Rev.D FR4, 4-layer, 3mm Thickness

ROHM 150 x 150

IC Mounted U1,U101 BD7F200EFJ-LB2 PWM IC ROHM HTSOP-J8

IC Mounted U2,U102 BM6101FV-CE2 Driver IC ROHM SSOP-20W

IC Mounted U201 BD450M2WEFJ-CE2 LDO(5V,0.2A) ROHM HTSOP-J8

IC Mounted U51,U151 S-19700A00A-E8 LDO(20V,0.4A) SII HSOP-8A

IC Mounted IC1,IC2,IC3,IC4, IC101,IC102,IC103,IC104, IC203,IC204

BU4S11G2TR NAND(single) ROHM SSOP-5

IC Mounted IC5,IC105,IC201,IC202, IC207,IC208,IC209,IC210

BU4SU69G2TR INV(single) ROHM SSOP-5

IC Mounted IC205,IC206 BU4S584G2TR Schmitt INV(S) ROHM SSOP-5

Diode Mounted D1,D51,D52,D101,D151, D152,D202,D203,D204

RB160MM-40TR 40V,1A ROHM PMDU

Diode Mounted D59,D159 RB160VAM-60TR 60V,1A ROHM TUMD2M

Diode NOP D55,D56,D155,D156 RB160VAM-60TR 60V,1A ROHM TUMD2M

Diode Mounted D58,D158 RB168VAM150TR 150V,1A ROHM TUMD2M

Diode Mounted D53,D54,D153,D154, D68,D69,D168,D169

RFN1LAM7STR 700V,0.8A ROHM PMDTM

Diode Mounted D201 RF302LAM2STR 200V,3A ROHM PMDTM

Diode NOP D57,D157 DUT TBD TO-247

Transistor NOP Q51,Q151 DUT TBD TO-247-4L

Transistor NOP Q52,Q152 DUT TBD TO-247-3L

Transistor Mounted Q53,Q153 RSR030N06TL 60V,3A ROHM SC-96

Transistor Mounted

Q201,Q202,Q203,Q204, Q231,Q232,Q233,Q234, Q301,Q302,Q303,Q304, Q306,Q251

2SCR523EBTL 50V,0.1A ROHM SC-89

Transistor Mounted Q305,Q307,Q252 2SAR523EBTL 50V,0.1A ROHM SC-89

Zener Diode Mounted ZD1,ZD101 TFZVTR15B 15V, 20mA ROHM TUMD2M

Zener Diode Mounted ZD51,ZD151 TFZVTR2.0B 2.0V, 20mA ROHM TUMD2M

Zener Diode NOP ZD52,ZD152 TFZVTR2.0B 2.0V, 20mA ROHM TUMD2M

Zener Diode NOP ZD53,ZD153 TFZVTR22B 22V, 5mA ROHM TUMD2M

LED Mounted LED201,LED51,LED151 SML-D12P8WT86L Green, 20mA ROHM 1.6 x 0.8

LED Mounted LED202,LED232,LED301, LED302 SML-D12U8WT86Q Red, 20mA ROHM 1.6 x 0.8

Switch Mounted SW201,SW202,SW301 SMTE3-01E-Z SPST, 24V,30mA Copal 6.8 x 7.0

Jumper pin Mounted JP201,JP51,JP151 929647-02-03-EU Male,3-pin 3M ---

Jumper-pin shunt Mounted JP202,JP52,JP152 QPC02SXGN-RC 2-pin, black Sullins 2.54 x 5

Terminal Mounted T1,T2,T3,T4,T5 7808 M5, 30A, 6P Keystone 12 x 12

Terminal Mounted CN201 OSTTE100104 10pin, black ON-SHORE 36 x 7

Terminal Mounted CN202 OSTTE020104 2pin, black ON-SHORE 8 x 7

Test Pin Mounted

TP1,TP101,TP201,TP202, TP203,TP51,TP52,TP53, TP54,TP151,TP152,TP153, TP154,TP302,TP303

HK-2-G SMD Mac8 3.2 x 1.6

Test Pin NOP TP301 HK-2-G SMD Mac8 3.2 x 1.6

Connector NOP CX51,CX52,CX151,CX152 73415-2061 Jack, SMD mount Molex φ3.45 3.45 x 3.45

Transformer Mounted TX1,TX101 EE2225 04398-T256 2-output SUMIDA 20 x 18

H

S

L

S

9/17



Dec. 2019



Trimmer Mounted RV51,RV151 SM-3TW10kohm(103) 10k,1/8W,11turns Copal 3.9 x 3.5

Trimmer Mounted RV301 SM-31W1kohm(102) 1k,1/8W,5turns Copal 3.9 x 3.5

Resistor Mounted

R5,R6,R105,R106, R62,R162,R207, R210,R211,R212,R237, R215,R245,R251

MCR01MZPF2201 2.2k,1/16W ROHM 1.0 x 0.5

Resistor Mounted R366 MCR01MZPF10R0 10,1%,1/16W ROHM 1.0 x 0.5

Resistor Mounted R52,R152,R217 MCR01MZPF6802 68k,1%,1/16W ROHM 1.0 x 0.5

Resistor Mounted R8,R108,R51,R151, R11,R12,R111,R112

MCR01MZPF1502 15k,1%,1/16W ROHM 1.0 x 0.5

Resistor Mounted R213,R243,R348 MCR01MZPF6801 6.8k,1%,1/16W ROHM 1.0 x 0.5

Resistor Mounted R9,R109 MCR01MZPJ000 0ohm ROHM 1.0 x 0.5

Resistor Mounted R10,R110,R252, R1,R101 MCR01MZPF3901 3.9k,1%,1/16W ROHM 1.0 x 0.5

Resistor Mounted R345,R216,R246 MCR01MZPF3301 3.3k,1%,1/16W ROHM 1.0 x 0.5

Resistor Mounted R55,R155,R61,R161 MCR01MZPF4702 47k,1%,1/16W ROHM 1.0 x 0.5

Resistor Mounted R7,R107 MCR01MZPF3902 39k,1%,1/16W ROHM 1.0 x 0.5

Resistor Mounted R53,R153 MCR01MZPF8201 8.2k,1%,1/16W ROHM 1.0 x 0.5

Resistor Mounted R60,R160,R355,R356, R344,R346,R347,R357, R254,R349,R352,R350

MCR01MZPF1501 1.5k,1%,1/16W ROHM 1.0 x 0.5

Resistor Mounted

R202,R203,R205,R206, R232,R233,R235,R236, R218,R219,R358,R255, R208,R238

MCR01MZPF1002 10k,1%,1/16W ROHM 1.0 x 0.5

Resistor Mounted R2,R102,R78,R178,R301, R302,R303,R304,R305

MCR03EZPJ000 0ohm ROHM 1.6 x 0.8

Resistor Mounted R3,R4,R103,R104,R54, R154,R59,R159,R353

MCR10EZPJ101 100,5%,1/8W ROHM 2.0 x 1.25

Resistor Mounted R342 MCR10EZPF2200 220,1%,1/8W ROHM 2.0 x 125

Resistor Mounted R13,R113,R63,R163, R341,R343,R253,R340

MCR10EZPF4701 4.7k,1%,1/8W ROHM 2.0 x 1.25

Resistor Mounted R201,R204,R209,R214, R234,R239,R221,R222, R359,R361

MCR10EZPF4700 470,1%,1/8W ROHM 2.0 x 1.25

Resistor Mounted R65,R165,R68,R168 LTR18EZPF1500 150,1%,3/4W ROHM 1.6 x 3.2

Resistor Mounted R58,R158 LTR18EZPFLR470 0.47,1%,1W ROHM 1.6 x 3.2

Resistor Mounted R56,R156,R354, R64,R164 MCR18EZPJ472 4.7k,5%,1/4W ROHM 3.2 x 1.6

Resistor Mounted R74,R174 ESR18EZPJ3R3 3.3,5%,1/2W ROHM 3.2 x 1.6

Resistor Mounted R73,R173,R362,R363 MCR18EZPJ000 0ohm ROHM 3.2 x 1.6

Resistor Mounted R334,R335 KTR25JZPJ105 1M,5%,1/3W ROHM 3.2 x 2.5

Resistor Mounted R306,R307,R308,R309, R310,R311

LTR100JZPJ683 68k,5%,2W ROHM 3.2 x 6.4

Resistor Mounted R321,R322,R323,R324, R325,R326,R327,R328, R329,R330

LTR10EVHFSR047 47m,1%,1/2W ROHM 1.2 x 2.0

Resistor NOP R57,R157 MCR03EZPJ000 0ohm ROHM 1.6 x 0.8

Resistor NOP R331 MCR10EZPF4700 470,1%,1/8W ROHM 2.0 x 1.25

Resistor NOP R70,R170,R77,R177,R364,R365 MCR18EZPJ000 0ohm ROHM 3.2 x 1.6

Resistor NOP R72,R75,R172,R175,R71,R171 ESR18EZPJ3R3 3.3,5%,1/4W ROHM 3.2 x 1.6

Resistor NOP R332,R333 KTR25JZPJ105 1M,5%,1/3W ROHM 3.2 x 2.5

Resistor NOP R360 PWR4412-2S-D-R0050F 5m,1% 5W BOURNS 2.1 x 4.8

Resistor Mounted R79,R80,R81, R179,R180,R181 ESR25JZPJ100 10, 5%, 2/3W ROHM 3.2 x 2.5

10/17



Dec. 2019



Capacitor Mounted

C2,C102,C10,C14,C110, C114,C53,C55,C153,C155, C5,C6,C7,C8,C9,C105, C106,C107,C108,C109, C207,C208,C209,C210, C211,C212,C213,C214, C215,C216,C206, C220,C58,C59.C158, C159,C15,C115

CGA2B3X7R1H104K050BB 0.1u,50V,X7R TDK 1.0 x 0.5

Capacitor Mounted C57,C157,C219,C223, C221,C222,C312

CGA2B2C0G1H101J050BA 100p,50V,C0G TDK 1.0 x 0.5

Capacitor Mounted C202,C56,C156, C224,C1,C101,C251

CGA3E1X7R1V105K080AC 1u,35V,X7R TDK 1.6 x 0.8

Capacitor Mounted C3,C4,C13,C103,C104, C113,C310,C311,C313

CGA3E2C0G1H102J080AA 1000p,50V,C0G TDK 1.6 x 0.8

Capacitor Mounted C64,C164 CGA3E3X7R1H474K080AB 0.47u,50V,X7R TDK 1.6 x 0.8

Capacitor Mounted C51,C52,C54,C151,C152, C154,C62,C63,C162,C163

CGA4J1X7R1V475K125AC 4.7u,35V,X7R TDK 2.0 x 1.25

Capacitor Mounted C203,C204,C205, C217,C218,C309

CGA4J1X7S1E106KT0Y0N 10uF,25V,X7S TDK 2.0 x 1.25

Capacitor Mounted C60,C61,C160,C161 CGA5L3X5R1H106K160AB 10uF,50V,X5R TDK 3.2 x 1.6

Capacitor Mounted C12,C112,C201 C3216X5R1E226M160AB 22uF,25V,X5R TDK 3.2 x 1.6

Capacitor Mounted C304,C305 CGA9P1X7T2J474M250KC 0.47u,630V,X7T TDK 5.7 x 5.0

Capacitor Mounted C302,C303 B32776G1106K000 10uF,1250V TDK 42 x 28

Capacitor Mounted C68,C168 C5750C0G3A333J280KC 33000pF,1000V TDK 5.7 x 5.0

Capacitor NOP C11,C111 CGA2B3X7R1H104K 0.1u,50V,X7R TDK 1.0 x 0.5

Capacitor NOP C308,C315 CGA2B2C0G1H101J050BA 100p,50V,C0G TDK 1.0 x 0.5

Capacitor NOP C314,C67,C167 CGA3E2C0G1H102J080AA 1000p,50V,C0G TDK 1.6 x 0.8

Capacitor NOP C65,C66,C165,C166 CGA5L3X5R1H106K160AB 10uF,50V,X5R TDK 3.2 x 1.6

Capacitor NOP C306,C307 CGA9P1X7T2J474M250KC 0.47u,630V,X7T TDK 5.7 x 5.0

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８．PCB Layout

This PCB has four layers. Each layer routing of PCB is illustrated in Figure 4. (a), (b), (c), (d). The silkscreen top and bottom are

shown in Figure 4 (e), (f).

Also, the Gerber-files can be provided. Get in contact with our application support team.

Figure 4. (a) Top Layer (Top view)

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Figure 4. (b) Layer 2 (Top view)

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Figure 4. (c) Layer 3 (Top view)

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Figure 4. (d) Bottom Layer (Top view)

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Figure 4. (e) Top assembly silkscreen

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Figure 4. (f) Bottom assembly silkscreen

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９．Precautions

In addition to the precautions listed throughout this manual and “Operation Manual” (No.61UG047E Rev.001), please read and

understand the following conditions. This evaluation board can have over 1000V applied. Therefore, not only on-board-problems

but also human failures by wrong operation must be removed completely.

In Table 8, the particular precautions about this board abnormal status are shown. In addition, after all safety steps are taken, this

board may be used.

Table 8. Abnormal status of the evaluation board

Function

Items Details

DCR LED non-lighted Please check LED301 (Red) turns ON, when input-voltage is applied. If no LED turns ON, please check voltage-source, layout and so on. (LED turns ON, when in/output voltage gets over around 20V.)

FLT LED non-lighted Please check that under FAULT-status, even inputting clock signal, MOSFET drive-signal does not come out and LED202 and LED232 (RED) turns ON. If clock signal over 20us is input without mounting MOSFET, it leads to FLT status.

OCP Protection circuit is not 100 % risk avoidance.

This OCP cannot avoid danger completely. This function is for emergency-stop when protection operation does not work in case of accidental output short-circuit under open-loop control. Thus during HVdc application, please conduct constant monitoring so that instant action against abnormal status is possible such as power cut-off.

FLT LED lighted during LS DPT In the default condition (0V bias), a pulse width of the double pulse test should be utilized within 10μs and 30A of drain current. However, this limitation is LS MOSFET DPT only. If this evaluation board is utilized out of this limitation, LS_FAULT LED (LED202) will be turned on. In case that over 10μs pulse width is applied, the level-shift condition of OCP circuit should be changed. Get detailed information from the operation Manual of this evaluation board (No.61UG047E Rev.001).

HVdc Vsw

Over-spec voltage application Miss-layout

Please let an expert handle the board. Over-spec voltage must not applied. Please make sure that there is no miss-connection of layout. Please never touch it when it is under operation.

Vcc Miss-layout Over-spec voltage application

Please pay attention to layout not to apply positive and negative Vcc in reverse. Note that a diode is connected between Vcc to SGND (D201) in order to prevent destruction of the TTL logic circuit. The maximum current rating is 3 A. Therefore, an OCP level of Vcc power supply should be set up to 3A. Also unspecified voltage-application leads to malfunction. Please operate with full-check.

SNB RDC_SNB

MLCC Burn-out Large size MLCCs are used. Mechanical stress easily leads to short-circuit malfunction due to cracks. Please pay attention when handling the board to prevent over-stress.

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Notice

ROHM Customer Support System http://www.rohm.com/contact/

Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us.

N o t e s

The information contained herein is subject to change without notice.

Before you use our Products, please contact our sales representative and verify the latest specifica-tions :

Although ROHM is continuously working to improve product reliability and quality, semicon-ductors can break down and malfunction due to various factors.Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM.

Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production.

The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information.

The Products specified in this document are not designed to be radiation tolerant.

For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems.

Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters.

ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein.

ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information.

Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations.

When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act.

This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM.

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