3DD13003 TRANSISTOR ( NPN )

FEATURES

Power Switching Applications

MAXIMUM RATINGS(TA=25 unless otherwise noted)℃Symbol Parameter Value Unit

VCBO Collector-Base Voltage 700 V

VCEO Collector-Emitter Voltage 400 V

VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A

PC Collector Dissipation 1.25 W

TJ, Tstg Operation Junction and Storage Temperature Range -55~+150 ℃

ELECTRICAL CHARA CTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage V(BR)CBO Ic= 1mA,IE=0 700 V

Collector-emitter breakdown voltage V(BR)CEO Ic= 10 mA,IB=0 400 V

Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9 V

Collector cut-off current ICBO VCB= 700V,IE=0 1 mA

Collector cut-off current ICEO VCE= 400V,IB=0 0.5 mA

Emitter cut-off current IEBO VEB= 9 V, IC=0 1 mA

hFE（1） VCE= 5 V, IC= 0.5 A 20 40 DC current gain

hFE（2） VCE= 5 V, IC= 1.5A 5

Collector-emitter saturation voltage VCE(sat) IC=1A,IB= 250 mA 0.6 V

Base-emitter saturation voltage VBE(sat) IC=1A, IB= 250mA 1.2 V

Base-emitter voltage VBE IE= 2A 3 V

Transition frequency fT VCE=10V,Ic=100mA

f =1MHz 5 MHz

Fall time tf 0.5 µs

Storage time ts IC=250mA 2 4

IC=1A,IB1=-IB2=0.2A

VCC=100V

µs

TO-252-2L

1.. BASE

2. COLLECTOR

3. EMITTER

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD

TO-252-2L Plastic-Encapsulate Transistor

1 Rev. - 2.1www.jscj-elec.com

1

2

3

CLASSIFICATION OF hFE(1)

Range 20-30 30-40

CLASSIFICATION OF tS Rank A B

Range 2.0-3.0 (μs ) 3.0-4.0(μs )

0.1 1 10 100 1000200

400

600

800

1000

1200

0 25 50 75 100 125 1500.00

0.25

0.50

0.75

1.00

1.25

1.50

1 10 100 10001

10

100

0 200 400 600 800 10000.1

1

10

100

1000

0 1 2 3 4 5 6 70.00

0.25

0.50

0.75

1.00

1 10 100 100010

100

1000

β=4

ICVBEsat ——

BASE

- EM

ITTE

R S

ATU

RAT

ION

VOLT

AGE

V B

Esa

t (m

V)

COLLECTOR CURREMT IC (mA)

Ta=100 ℃

Ta=25℃

PC —— Ta

AMBIENT TEMPERATURE Ta ( )℃

CO

LLEC

TOR

PO

WER

DIS

SIPA

TIO

NP C

(W

)

IChFE ——

Ta=100℃

Ta=25℃

DC

CU

RR

EN

T G

AIN

h

FE

COLLECTOR CURRENT IC (mA)

COMMON EMITTERVCE= 5V

1500

C

OLL

EC

TOR

CU

RR

EN

T

I C

(mA)

BASE-EMMITER VOLTAGE VBE (mV)

IC —— VBE

T a=2

5℃

T a=1

00℃

COMMON EMITTERVCE=5V

Static Characteristic

COMMON EMITTERTa=25℃

CO

LLE

CTO

R C

UR

RE

NT

I C

(A

)

COLLECTOR-EMITTER VOLTAGE VCE (V)

1500

1500

1500

β=4

T a=100 ℃

T a=25℃

VCEsat —— IC

CO

LLE

CTO

R-E

MIT

TER

SA

TUR

ATI

ON

VOLT

AGE

V C

Esa

t (m

V)

COLLECTOR CURRENT IC (mA)

50mA45mA40mA

35mA

30mA

25mA

10mA

15mA

20mA

IB=5mA

Typical Characteristics

2www.jscj-elec.com Rev. - 2.1

3www.jscj-elec.com Rev. - 2.1

Min. Max. Min. Max.A 2.200 2.400 0.087 0.094

A1 0.000 0.127 0.000 0.005b 0.635 0.770 0.025 0.030c 0.460 0.580 0.018 0.023D 6.500 6.700 0.256 0.264D1 5.100 5.460 0.201 0.215D2E 6.000 6.200 0.236 0.244e 2.186 2.386 0.086 0.094L 9.712 10.312 0.382 0.406

L1L2 1.400 1.700 0.055 0.067L3L4 0.600 1.000 0.024 0.039Φ 1.100 1.300 0.043 0.051θ 0° 8° 0° 8°h 0.000 0.300 0.000 0.012V

1.600 REF. 0.063 REF.

5.250 REF. 0.207 REF.

SymbolDimensions In Millimeters Dimensions In Inches

2.900 REF. 0.114 REF.

4.830 REF. 0.190 REF.

NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein.

TO-252-2L Package Outline Dimensions

TO-252-2L Suggested Pad Layout

L4A1

D

D1

L

e b

cA

V

D2

L1

E

L2

L3

φ

θ

h

4www.jscj-elec.com Rev. - 2.1

TO-252-2L Tape and Reel