JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-92 Plastic-Encapsulate Transistors S8050 TRANSISTOR (NPN) FEATURES

Complimentary to S8550 Collector current: IC=0.5A

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V

VCEO Collector-Emitter Voltage 25 V

VEBO Emitter-Base Voltage 5 V

IC Collector Current -Continuous 0.5 A

PC Collector Power Dissipation 0.625 W

TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Collector-base breakdown voltage V(BR)CBO IC= 100μA, IE=0 40 V

Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V

Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 5 V

Collector cut-off current ICBO VCB= 40 V , IE=0 0.1 μA

Collector cut-off current ICEO VCE= 20 V , IB=0 0.1 μA

Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 μA

hFE(1) VCE= 1V, IC= 50mA 85 400 DC current gain

hFE(2) VCE= 1V, IC= 500mA 50

Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 0.6 V

Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 1.2 V

Transition frequency fT VCE= 6V, IC=20mA f =30MHz

150 MHz

CLASSIFICATION OF hFE(1)

Rank B C D D3

Range 85-160 120-200 160-300 300-400

TO-92

1.EMITTER

2.BASE

3.COLLECTOR

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0 4 8 12 16 200

20

40

60

80

100

1 10 10010

100

1000

1 10 10010

100

0.1 1 101

10 10010

100

1000

0 25 50 75 100 125 1500

125

250

375

500

625

750

0.0 0.2 0.4 0.6 0.8 1.00.1

1

10

100

1 10 100100

1000

CO

LLEC

TOR

CURR

ENT

I C

(mA)

COLLECTOR-EMITTER VOLTAGE VCE (V)

Static Characteristic

COMMONEMITTERTa=25℃

IB=60uA

120uA

180uA

240uA

300uA

360uA

480uA

420uA

fT —— IC

hFE ——COMMON EMITTERVCE=1V

3 30 500

Ta=100℃

Ta=25℃

DC C

URRE

NT G

AIN

h FE

COLLECTOR CURRENT IC (mA)

IC

2000

30

300

303

COLL

ECTO

R-EM

ITTE

R SA

TURA

TIO

NVO

LTAG

E

V CEsa

t (m

V)

COLLECTOR CURRENT IC (mA)

β=10

Ta=25℃

Ta=100℃

ICVCEsat —— 500

500

100

30

10

3

30.3 20

Cob

Cib

REVERSE VOLTAGE V (V)

f=1MHzIE=0/ IC=0Ta=25℃

VCB/ VEBCob/ Cib ——

CAPA

CITA

NCE

C

(p

F)

300

2 30

COMMON EMITTERVCE=6VTa=25℃

TRAN

SITI

ON

FREQ

UENC

Y

f T (M

Hz)

COLLECTOR CURRENT IC (mA)

S8050Typical Characterisitics

COLL

ECTO

R PO

WER

DIS

SIPA

TIO

N

P

C (m

W)

AMBIENT TEMPERATURE Ta ( )℃

PC —— Ta

VBEIC ——

30

3

0.3

Ta=25℃

Ta=100℃

COMMON EMITTERVCE=1V

COLL

ECTO

R CU

RREN

T

I C (m

A)

BASE-EMMITER VOLTAGE VBE (V)

303

β=10

BASE

-EM

ITTE

R SA

TURA

TIO

NVO

LTAG

E

V BEsa

t (m

V)

COLLECTOR CURRENT IC (mA)

Ta=25℃

Ta=100℃

500

ICVBEsat ——

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Typical Characteristics

Min Max Min MaxA 3.300 3.700 0.130 0.146

A1 1.100 1.400 0.043 0.055b 0.380 0.550 0.015 0.022c 0.360 0.510 0.014 0.020D 4.300 4.700 0.169 0.185D1 3.430 0.135E 4.300 4.700 0.169 0.185e

e1 2.440 2.640 0.096 0.104L 14.100 14.500 0.555 0.571Φ 1.600 0.063h 0.000 0.380 0.000 0.015

Symbol Dimensions In Millimeters Dimensions In Inches

1.270 TYP 0.050 TYP

TO-92 Package Outline Dimensions

TO-92 Suggested Pad Layout

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TO-92

4 C,Jan,2015