training workshop may 13-14, 2015 electron …onami.us/resources/files/files/onami may program...
TRANSCRIPT
MORNING SEMINARS: Smith Memorial Student Union
8:00 AM Continental Breakfast
8:30 AM Welcome
9:00 AM Challenges in yield improvement for ULSI processing
9:40 AM Basics of plasma etch
10:20 AM Break
10:45 AM Scanning X-ray photoelectron spectroscopy and its application in semiconductor device process
11:25 AM Advanced DB techniques: STEM and GFIB
12:05 PM Lunch and migration to CEMN
AFTERNOON DEMOS: Center for Electron Microscopy & Nanofabrication
1:00 PM Welcome/Logistics
1:20 PM Surface contamination analysis by XPS
2:10 PM Nanoprobe elemental quantification and mapping with STEM/EDX
3:00 PM Break
3:20 PM TEM sample preparation by FIB
4:10 PM Elemental quantitative analysis in SEM
5:00 PM Conclusion
MORNING SEMINARS: Smith Memorial Student Union
9:00 AM Using EELS to open a window to the nano-world
9:40 AM Transmission Kikuchi Diffraction for high resolution quantitative microstructural analysis in the SEM
10:20 AM Break
10:45 AM Quantitative microscopy: Strain and composition measurements
11:25 AM Nanofabrication at the sub-10nm length scale using inert ions
12:05 PM Lunch and migration to CEMN
AFTERNOON DEMOS: Center for Electron Microscopy & Nanofabrication
1:00 PM Welcome/Logistics
1:20 PM Angle-resolved XPS for thin film analysis
2:10 PM EELS quantification and EFTEM
3:00 PM Break
3:20 PM Cross milling without sample rotation
4:10 PM EBSD analysis in SEM
5:00 PM Conclusion
DAY 1: May 13, 2015 » Wednesday 8 AM – 5 PM DAY 2: May 14, 2015 » Thursday 9 AM – 5 PM
T R A I N I N G W O R K S H O P » MAY 13-14, 2015
Electron Microscopy and Spectroscopy in Micro and Nano ElectronicsCenter for Electron Microscopy and Nanofabrication, Portland State University
DAY 1: May 13, 2015 » Wednesday 8 AM – 5 PM
Basics of plasma etchA B S T R A C T B I OPlasma Etch is a critical technology for semiconductor processing. In this presentation we will cover both plasma etch and resist strip processes, equipment used at Microchip Technology, and what could go wrong. This presentation is part of a series of internal classes for production specialists and technicians who are looking for a deeper understanding of what goes on behind the buttons.
GARY STINSON has 20 years of experience at Microchip Technology beginning with patterned and unpatterned wafer inspection, both in Fab2 (Tempe, AZ) and Fab4 (Gresham) beginning in 2002. Promoted to Fab4 Yield Manager in 2004 with responsibilities for Device/Process Integration in addition to wafer inspection. Developed a partnership with PSU CEMN for cross section TEM capability beginning in 2012.
Gary Stinson
Sr. Yield Manager, Fab4
Microchip Technology, Inc.
Challenges in yield improvement for ULSI processingA B S T R A C T B I OYield improvement can be one of the most important activities in ULSI processing. Due the complexity of processing however this can also be a very challenging endeavor. Many methodologies and tools exist to assist engineers in this often daunting task. This presentation will touch upon some of the methods and tools used to drive yields as well as some of the key challenges faced by yield engineers and how they utilize the various techniques to address these challenges.
JOE LEBOWITZ is the Director of Yield and CMOS Integration at Maxim Integrated in their Beaverton Oregon wafer fabrication facility. Mr. Lebowitz (Joe) joined Maxim in 2012 where he has been leading the transfer and development of Maxim’s newest CMOS technologies for use in their highly integrated Analog solutions. Mr. Lebowitz has been working in the Semiconductor industry for over 30 years and has deployed best known methods and systems for yield improvement at Bell Labs, AMD, TI, and Freescale prior to joining Maxim. He has a BSEE from Steven’s Tech and an MS in Applied Physics from Caltech.
Joe Lebowitz
Director of Yield and CMOS Integration
Maxim Integrated
joe.lebowitz@ maximintegrated.com
Scanning X-ray photoelectron spectroscopy and its application in semiconductor device processA B S T R A C T B I OX-ray photoelectron spectroscopy (XPS) is a qualitative and quantitative spectroscopic technique that measures the elemental composition and chemical state of the elements on 1~12nm top surface of the materials or device. Monochromatic, micro-focused, and scanning x-ray source provides excellent large area and superior micro-area spectroscopy performance suitable for semiconductor process development. In this presentation, we will provide an overview of basic theory, practical aspects, and application of scanning XPS in semiconductor wafer process.
DR. TONY CHEN is facility manager of CEMN, Portland State University. Previously he worked as a research scientist at Monsanto Company for two years and as a senior member of technical staff at Maxim Integrated Products Inc. for a year. Dr. Chen received his Ph.D. in materials science from the University of Birmingham. He spent five years at the University of California, Santa Barbara and Brookhaven National Laboratory doing postdoctoral research. Following this, he worked as the chief scientist at the University of Louisville, in charge of TEM, SEM, XPS and XRD facilities and analytical services. As one of PIs, he acquired a scanning ESCA microprobe through NSF-MRI funds at PSU. Tony’s research interests are focused on microstructural characterization using electron microscopy and spectroscopy in materials science, nanoscience and technology, semiconductor devices.
Zhiqiang “Tony” Chen
Manager
Center for Electron Microscopy & Nanofabrication, Portland State University
Advanced DB techniques: STEM and GFIBA B S T R A C T B I OThis presentation shows the practical methods employed in the lab for processing challenging samples with a dual beam FIB. First it will discuss STEM techniques for features <20nm. It will also explore end pointing techniques using STEM imaging as well as utilizing the 360 degree rotation of the newer flip stage on the FEI Helios 450F1 and Helios 460F1. Lastly, it will review the glancing FIB method for removing an overburden layer from a sample to inspect varying levels of depth through a device.This presentation will be less about theory and more about practical techniques of working with challenging samples without sacrificing throughput in the lab.
TERRI SHOFNER has worked with Focused Ion Beam systems since 1997, starting with Lucent Technologies and Bell Laboratories where she assisted in the development of FIB methods of TEM prep using the ex-situ lift-out technique. After this she was recruited as a Senior Field Applications Engineer with FEI Company, and after taking a year to have a child she returned as a circuit edit specialist with Intel Corporation. For the past 8 years Shofner has been with Lam Research at their Tualatin Oregon facility (previously Novellus Systems). She has authored and co-authored numerous technical articles, holds several patents and has presented at conferences. She holds B.S. degrees in both physics and electrical engineering as well as a Masters in Library and Information Science.
Terri Shofner
SEM Lab Supervisor
Lam Research
DAY 2: May 14, 2015 » Thursday 9 AM – 5 PM
Nanofabrication at the sub-10nm length scale using inert ionsA B S T R A C T B I OIon microscopy with helium or neon beams created from a gas field ion source (GFIS) shows great potential and flexibility for many imaging and nanofabrication applications. Due to the small probe size and the high precision of the ion beam, sub-10 nm structures can be routinely fabricated even in very sensitive materials such as graphene. In contrast to focused gallium ion beams, helium and neon are inert ion species and leave no chemical contamination in the processed sample. Additionally, the beam-sample interaction dynamics of helium/neon ion beams offer unique contrast and stunning surface detail at sub 0.5nm lateral resolution. In this presentation, we will provide an overview of helium and neon FIB applications as well as report on new innovations on sample preparation and 3D nanotomography.
SOEREN EYHUSEN has a background in materials science and ion beam physics. After receiving a PhD from Goettingen University, Germany. In 2005, Soeren joined Carl Zeiss NTS Research and Development in Oberkochen focusing on electron microscopes and focused ion beam systems. He specializes in the area of electron optics and system integration. In 2012, he moved to the United States where he has been working as a product marketing manager for electron and ion beam microscopes for Carl Zeiss in Thornwood, New York.
Soeren Eyhusen
Product Marketing Manager
Electron and Ion Microscopes
need email address
Quantitative microscopy: Strain and composition measurementsA B S T R A C T B I OElectron microscopy in material science is often considered a useful tool for imaging and for qualitative information on nanostructures. However the development of modern techniques of analysis and simulation has taken us to a more quantitative use of imaging under different conditions. I’ll show my personal point of view and contribution on the advancement of computer-aided microscopy in recent years. To this purpose I’ll show a few relevant applications on nanoparticles, nanowires and nanostructured materials. Most applications will demonstrate the possibility to map strain and to obtain local chemical information from direct image analysis or aided by simulations. Finally I’ll describe future projects to get even more accurate chemical information from STEM imaging, pushing toward fast 3D chemical analysis.
VINCENZO GRILLO was born in 1973 and graduated in Physics in Genova in 1997. He received his Ph.D. in Electron Microscopy at Parma University and Erlangen University (Germany). In 2001 he was post-doc fellow at the Tokyo Institute of Technology, working on cathodoluminescence in TEM. Since 2003 he has been working at CNR as a researcher in electron microscopy. He has developed innovative (S)TEM methodologies, e.g., he published the first quantitative use of STEM with HAADF detector for chemical analyses. He also carried on advanced characterization of nanoparticles, nanowires and layered structures. He has now moved to Vortex beams and holographic beam generation: he contributed to some important publications in this field and recently joined McMorran Group for a sabbatical. He has received several invitations to international seminars and conferences and received the SISM prize as distinguished young Italian microscopist. Vincenzo Grillo is co-author of 80 international articles and chapters on books.
Vincenzo Grillo
Researcher, Istituto Nanoscienze S3 and Istituto dei Materiali per l’ Elettronica ed il Magnetismo
Visiting Assoc Researcher, Dept. of Physics, University of Oregon
Transmission Kikuchi Diffraction for high resolution quantitative microstructural analysis in the SEMA B S T R A C T B I OTransmission Kikuchi Diffraction (TKD) is a relatively new way to perform high resolution microstructural characterization, using a conventional EBSD system in the SEM. As in TEM, it requires a thin sample, however its use of a relatively low kV beam restricts the effective information depth to within approximately 10nm of the bottom (exit) surface. This allows TKD to analyze very fine grains even where sample thicknesses include more than one grain, because diffraction information from material closer to the upper surface is obliterated by subsequent incoherent scattering events. Although special data acquisition considerations are important in TKD, the data generated by the technique are identical in format to EBSD data, so all of the post-processing tools developed for EBSD may be applied. Researchers have used TKD to effectively study materials that are difficult to analyze by conventional TEM and EBSD, such as highly strained, fine grained metals.
SCOTT SITZMAN is an applications scientist with Oxford Instruments NanoAnalysis, specializing in EBSD. His B.S. and M.S. degrees (UCSB and the University of Wisconsin—Madison) are in geology, with a minor in materials science and an emphasis on characterization. He has worked on EBSD at G.E.s Global Research Center in upstate New York, and later at HKL Technology, now part of Oxford Instruments.
Scott Sitzman
Applications Scientist
Oxford Instruments
scott.sitzman@ oxinst.com
Using EELS to open a window to the nano-worldA B S T R A C T B I OIn his historic lecture “Plenty of room at the bottom,” Feynman challenged the community to “make the electron microscope more powerful.” 55+ years later, we are still making the same challenge. We not only want to “see” every atom in the material to determine its position, but we also want to know its chemical state and how it is bonded to its neighbors. While we are still a long way off from this goal in the general case, electron energy-loss spectroscopy (EELS) can help answer some or all of these questions in some specific cases. In this presentation, we will discuss the fundamentals of EELS and energy-filtered TEM (EFTEM) and how these technique can reveal composition, atomic bonding and chemical states at the nanoscale (and even the atomic scale in some cases). We will draw from recent examples in catalysts, complex oxides and semiconductors to illustrate these concepts.
RAY TWESTEN has been using electron microscopy to investigate material since the 1990s using both standard and custom instruments. He received his Ph.D. from the University of Illinois at Urbana-Champaign (UIUC), was postdoc at Sandia Labs and staff scientist/lab manager at the Center for Microanalysis of Materials at UIUC. Since 2005, Dr. Twesten has been with Gatan in Pleasanton, CA, first with the EELS R&D group and later as the manager of the EELS product development group. He is currently the manager of Gatan’s STEM, EELS and Energy Filter products.
Ray Twesten
Product Manager, Analytical Instruments
Gatan, Inc.
Parking:DIRECTIONS FROM 1-405 NORTHBOUND
• Follow signs to Hwy 26• Take Exit 1D to 12th Avenue• Look for parking garage entry very first
building on your left – the garage is just beyond the corner of SW Montgomery Street, very easy to drive past, after which navigation becomes tricky due to the many one-way streets
DIRECTIONS FROM DOWNTOWN
• Drive south on SW 13th Avenue• Enter the parking garage on your left just
beyond SW Market Street
Workshop:SMITH MEMORIAL STUDENT UNION
• Walk out of the parking garage and follow SW Mill Street heading east
• Cross the Park blocks and turn right (south)• Enter Smith Memorial Student Union from
SW Park Avenue• Head upstairs to the second floor to Room
236 in the SW corner of the building
SCIENCE BUILDING 1
• Walk north on the Park blocks and turn left (west) on SW Mill Street
• Enter Science Building 1, located on SW Mill Street between 10th and 11th Avenues
• Go downstairs to the basement to Room 22
SHATTUCK LOT
UNIVERSITYCENTER
FOURTH AVEBUILDING
UPPER MARKET CENTER
UNIVERSITYPLACE LOT
ART LOT
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STOTTCENTER
MILLERLIBRARY
SHATTUCKHALL
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ACADEMIC & REC CENTER
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SW MARKET
SW CLAY
SW COLUMBIA
SW JEFFERSON
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HOFFMANHALL
SCIENCE 1
SRTC
EPLER STHELENS
BLACKSTONE
XSB
SCHOOL OF BUSINESS
ONDINE
BROADWAYNATIVECENTER
UNIVPOINTE
H. GORDANCHILDCARE
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SW MILL
Parking Directions TRAINING WORKSHOP » MAY 13-14, 2015
Oregon Nanoscience and Microtechnologies Institute • P.O. Box 2041, Corvallis, OR 97339 • WWW.ONAMI .US • 541.713.1348
SEMINAR (1) May 13 8am – 12:45pm Smith Memorial Student Union, Room 236
HANDS-ON DEMOS (2) May 13 1pm – 5pm Center for Electron Microscopy and Nanofabrication, Science Building 1, Floor B (Basement), Room 22
SEMINAR (3) May 14 8am – 12:45pm Smith Memorial Student Union, Room 236
HANDS-ON DEMOS (4) May 14 1pm – 5pm Center for Electron Microscopy and Nanofabrication, Science Building 1, Floor B (Basement), Room 22
NOTE:
PAYING FOR PARKING
Pay Stations are located within the
garage. Your license plate number will be required to purchase
a permit.