trenchstop series - infineon technologies
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IKA06N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 1 Rev. 2.5 20.09.2013
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
Features
Very low VCE(sat) 1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed
Low EMI
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Applications
Washing Machine
Inverter and Variable Speed Drive
Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package
IKA06N60T 600V 6A 1.5V 175C K06T60 PG-TO220-3 (FullPAK)
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage, Tj ≥ 25C VC E 600 V
DC collector current, limited by Tjmax
TC = 25C
TC = 100C
IC
10
6.2
A
Pulsed collector current, tp limited by Tjmax IC p u l s 18
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs - 18
Diode forward current, limited by Tjmax
TC = 25C
TC = 100C
IF
10.2
6.5
Diode pulsed current, tp limited by Tjmax IF p u l s 18
Gate-emitter voltage VG E 20 V
Short circuit withstand time2)
VGE = 15V, VCC 400V, Tj 150C tS C 5 s
Power dissipation
TC = 25C P t o t 28 W
Operating junction temperature T j -40...+175 C
Storage temperature T s t g -55...+150
Isolation voltage V i s o l 2500 Vr m s
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
G
C
E
PG-TO220-3 (FullPAK)
IKA06N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 2 Rev. 2.5 20.09.2013
Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic
IGBT thermal resistance,
junction – case
R t h J C 5.3 K/W
Diode thermal resistance,
junction – case
R t h J C D 6.5
Thermal resistance,
junction – ambient
R t h J A 80
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter Symbol Conditions Value
Unit min. typ. max.
Static Characteristic
Collector-emitter breakdown voltage V ( B R ) C E S VG E=0V, IC=0.25mA
600 - - V
Collector-emitter saturation voltage VC E ( s a t ) VG E = 15V, IC=6A
T j=25C
T j=175C
-
-
1.5
1.8
2.05
Diode forward voltage
VF VG E=0V, IF=6A
T j=25C
T j=175C
-
-
1.6
1.6
2.05
-
Gate-emitter threshold voltage VG E ( t h ) IC=0.18mA,
VC E=VG E
4.1 4.6 5.7
Zero gate voltage collector current
IC E S VC E=600V ,VG E=0V
T j=25C
T j=175C
-
-
-
-
40
700
µA
Gate-emitter leakage current IG E S VC E=0V,VG E=20V - - 100 nA
Transconductance g f s VC E=20V, IC=6A - 3.6 - S
Integrated gate resistor RG i n t none Ω
Dynamic Characteristic
Input capacitance C i s s VC E=25V,
VG E=0V,
f=1MHz
- 368 - pF
Output capacitance Co s s - 28 -
Reverse transfer capacitance C r s s - 11 -
Gate charge QG a t e VC C=480V, IC=6A
VG E=15V
- 42 - nC
Internal emitter inductance
measured 5mm (0.197 in.) from case
LE - 7 - nH
Short circuit collector current1)
IC ( S C ) VG E=15V, tS C5s VC C = 400V,
T j = 25C
- 55 - A
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
IKA06N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 3 Rev. 2.5 20.09.2013
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter Symbol Conditions Value
Unit min. Typ. max.
IGBT Characteristic
Turn-on delay time td ( o n ) T j=25C, VC C=400V, I C=6A,
VG E=0/15V, rG=23 ,
L =60nH,C=40pF
L , C f rom Fig. E
Energy losses include “tail” and diode reverse recovery.
- 9.4 - ns
Rise time t r - 5.6 -
Turn-off delay time td ( o f f ) - 130 -
Fall time t f - 58 -
Turn-on energy Eo n - 0.09 - mJ
Turn-off energy Eo f f - 0.11 -
Total switching energy E t s - 0.2 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time t r r T j=25C,
VR=400V, IF=6A,
diF /d t=550A/s
- 123 - ns
Diode reverse recovery charge Q r r - 190 - nC
Diode peak reverse recovery current I r r m - 5.3 - A
Diode peak rate of fall of reverse recovery current during tb
di r r /d t - 450 - A/s
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter Symbol Conditions Value
Unit min. typ. max.
IGBT Characteristic
Turn-on delay time td ( o n ) T j=175C, VC C=400V, I C=6A,
VG E=0/15V, rG=23 ,
L =60nH,C=40pF
L , C f rom Fig. E
Energy losses include “tail” and diode reverse recovery.
- 8.8 - ns
Rise time t r - 8.2 -
Turn-off delay time td ( o f f ) - 165 -
Fall time t f - 84 -
Turn-on energy Eo n - 0.14 - mJ
Turn-off energy Eo f f - 0.18 -
Total switching energy E t s - 0.335 -
Anti-Parallel Diode Characteristic
Diode reverse recovery time t r r T j=175C
VR=400V, IF=6A,
diF /d t=550A/s
- 180 - ns
Diode reverse recovery charge Q r r - 500 - nC
Diode peak reverse recovery current I r r m - 7.6 - A
Diode peak rate of fall of reverse recovery current during tb
di r r /d t - 285 - A/s
IKA06N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 4 Rev. 2.5 20.09.2013
I C,
CO
LLE
CT
OR
CU
RR
EN
T
10Hz 100Hz 1kHz 10kHz 100kHz
0A
5A
10A
15A
TC=110°C
TC=80°C
I C,
CO
LLE
CT
OR
CU
RR
EN
T
1V 10V 100V 1000V
0,1A
1A
10A
DC
10µs
tp=1µs
50µs
5ms
5µs
500µs
f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of switching frequency
(Tj 175C, D = 0.5, VCE = 400V,
VGE = 0/15V, rG = 23)
Figure 2. Safe operating area
(D = 0, TC = 25C,
Tj 175C;VGE=0/15V)
Pto
t, P
OW
ER
DIS
SIP
AT
ION
25°C 50°C 75°C 100°C 125°C 150°C0W
5W
10W
15W
20W
25W
I C,
CO
LLE
CT
OR
CU
RR
EN
T
25°C 75°C 125°C
0A
2A
4A
6A
8A
TC, CASE TEMPERATURE TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of case temperature
(Tj 175C)
Figure 4. Collector current as a function of case temperature
(VGE 15V, Tj 175C)
Ic
Ic
IKA06N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 5 Rev. 2.5 20.09.2013
I C,
CO
LLE
CT
OR
CU
RR
EN
T
0V 1V 2V 3V
0A
3A
6A
9A
12A
15A
15V
7V
9V
11V
13V
VGE
=20V
I C,
CO
LLE
CT
OR
CU
RR
EN
T
0V 1V 2V 3V
0A
3A
6A
9A
12A
15A
15V
7V
9V
11V
13V
VGE
=20V
VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic (Tj = 25°C)
Figure 6. Typical output characteristic (Tj = 175°C)
I C,
CO
LLE
CT
OR
CU
RR
EN
T
0V 2V 4V 6V 8V 10V0A
3A
6A
9A
12A
15A
25°C
TJ=175°C
VC
E(s
at)
, C
OLLE
CT
OR
-EM
ITT
SA
TU
RA
TIO
N V
OLT
AG
E
-50°C 0°C 50°C 100°C0,0V
0,5V
1,0V
1,5V
2,0V
2,5V
3,0V
IC=6A
IC=12A
IC=3A
VGE, GATE-EMITTER VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 7. Typical transfer characteristic (VCE=20V)
Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
IKA06N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 6 Rev. 2.5 20.09.2013
t, S
WIT
CH
ING
TIM
ES
0A 3A 6A 9A 12A 15A1ns
10ns
100ns
tr
td(on)
tf
td(off)
t, S
WIT
CH
ING
TIM
ES
1ns
10ns
100ns
tf
tr
td(off)
td(on)
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, rG = 23Ω, Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, IC = 6A, Dynamic test circuit in Figure E)
t, S
WIT
CH
ING
TIM
ES
50°C 100°C 150°C1ns
10ns
100ns
tr
tf
td(on)
td(off)
VG
E(t
h),
GA
TE-E
MIT
T T
RS
HO
LD
VO
LT
AG
E
-50°C 0°C 50°C 100°C 150°C0V
1V
2V
3V
4V
5V
6V
min.
typ.
max.
TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 6A, rG = 23Ω, Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.18mA)
IKA06N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 7 Rev. 2.5 20.09.2013
E,
SW
ITC
HIN
G E
NE
RG
Y L
OS
SE
S
0A 2A 4A 6A 8A 10A0,0 mJ
0,1 mJ
0,2 mJ
0,3 mJ
0,4 mJ
0,5 mJ
0,6 mJ
Ets*
Eon
*
*) Eon
and Ets include losses
due to diode recovery
Eoff
E,
SW
ITC
HIN
G E
NE
RG
Y L
OS
SE
S
0,0 mJ
0,1 mJ
0,2 mJ
0,3 mJ
0,4 mJ
Ets*
Eon
*
*) Eon
and Ets include losses
due to diode recovery
Eoff
IC, COLLECTOR CURRENT RG, GATE RESISTOR
Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=175°C, VCE=400V, VGE=0/15V, rG=23Ω, Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, IC = 6A, Dynamic test circuit in Figure E)
E,
SW
ITC
HIN
G E
NE
RG
Y L
OS
SE
S
50°C 100°C 150°C0,0mJ
0,1mJ
0,2mJ
0,3mJ
0,4mJ
Ets*
Eon
*
*) Eon
and Ets include losses
due to diode recovery
Eoff
E,
SW
ITC
HIN
G E
NE
RG
Y L
OS
SE
S
200V 300V 400V 500V0,0mJ
0,1mJ
0,2mJ
0,3mJ
0,4mJ
0,5mJ
Ets*
Eon
*
*) Eon
and Ets include losses
due to diode recovery
Eoff
TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=400V, VGE = 0/15V, IC = 6A, rG = 23Ω, Dynamic test circuit in Figure E)
Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 6A, rG = 23Ω, Dynamic test circuit in Figure E)
IKA06N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 8 Rev. 2.5 20.09.2013
VG
E,
GA
TE-E
MIT
TE
R V
OLT
AG
E
0nC 10nC 20nC 30nC 40nC 50nC0V
5V
10V
15V
480V
120V
c,
CA
PA
CIT
AN
CE
0V 10V 20V
10pF
100pF
1nF
Crss
Coss
Ciss
QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge (IC=6 A)
Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz)
I C(s
c), s
hort
circu
it C
OLLE
CT
OR
CU
RR
EN
T
12V 14V 16V 18V0A
20A
40A
60A
80A
t SC,
SH
OR
T C
IRC
UIT
WIT
HS
TA
ND
TIM
E
10V 11V 12V 13V 14V0µs
2µs
4µs
6µs
8µs
10µs
12µs
VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITETR VOLTAGE
Figure 19. Typical short circuit collector current as a function of gate-emitter voltage
(VCE 400V, Tj 150C)
Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=400V, start at TJ=25°C, TJmax<150°C)
IKA06N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 9 Rev. 2.5 20.09.2013
Zth
JC,
TR
AN
SIE
NT
TH
ER
MA
L I
MP
ED
AN
CE
10µs 100µs 1ms 10ms 100ms 1s 10s
10-1
K/W
100K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
Zth
JC,
TR
AN
SIE
NT
TH
ER
MA
L I
MP
ED
AN
CE
10µs 100µs 1ms 10ms 100ms 1s 10s10
-2K/W
10-1
K/W
100K/W
single pulse
0.01
0.02
0.05
0.1
0.2
D=0.5
tP, PULSE WIDTH tP, PULSE WIDTH
Figure 21. IGBT transient thermal impedance (D = tp / T)
Figure 22. Diode transient thermal impedance as a function of pulse width (D=tP/T)
t rr, R
EV
ER
SE
RE
CO
VE
RY
TIM
E
200A/µs 400A/µs 600A/µs 800A/µs0ns
50ns
100ns
150ns
200ns
250ns
TJ=25°C
TJ=175°C
Qrr,
RE
VE
RS
E R
EC
OV
ER
Y C
HA
RG
E
200A/µs 400A/µs 600A/µs 800A/µs0,0µC
0,1µC
0,2µC
0,3µC
0,4µC
0,5µC
TJ=25°C
TJ=175°C
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E)
Figure 24. Typical reverse recovery charge as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E)
R , ( K / W ) , ( s )
0.381 1.867*10-2 6.53*10
-2
2.57 1.350
0.645 2.208*10-3
1.454 5.474*10-4
0.062 5.306*10-5
0.186 5.926*10-1
C1=1/R1
R1 R2
C2=2/R2
R , ( K / W ) , ( s ) 0.403 1.773*10
-2 6.53*10
-2
2.57 1.346
0.938 1.956*10-3
2.33 4.878*10-4
0.071 4.016*10-5
0.188 5.684*10-1
C1=1/R1
R1 R2
C2=2/R2
IKA06N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 10 Rev. 2.5 20.09.2013
I rr, R
EV
ER
SE
RE
CO
VE
RY
CU
RR
EN
T
200A/µs 400A/µs 600A/µs 800A/µs0A
2A
4A
6A
8A
TJ=25°C
TJ=175°C
di rr
/dt,
DIO
DE
PE
AK
RA
TE
OF
FA
LL
OF
RE
VE
RS
E R
EC
OV
ER
Y C
UR
RE
NT
200A/µs 400A/µs 600A/µs 800A/µs0A/µs
-100A/µs
-200A/µs
-300A/µs
-400A/µs
-500A/µsT
J=25°C
TJ=175°C
diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E)
Figure 26. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 400V, IF = 6A, Dynamic test circuit in Figure E)
I F,
FO
RW
AR
D C
UR
RE
NT
0,0V 0,5V 1,0V 1,5V 2,0V0A
2A
4A
6A
8A
10A
25°C
TJ=175°C
VF,
FO
RW
AR
D V
OLT
AG
E
0°C 50°C 100°C 150°C0,0V
0,5V
1,0V
1,5V
2,0V
6A
IF=12A
3A
VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE
Figure 27. Typical diode forward current as a function of forward voltage
Figure 28. Typical diode forward voltage as a function of junction temperature
IKA06N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 11 Rev. 2.5 20.09.2013
Please refer to mounting instructions
PG-TO220-3 (FullPAK)
IKA06N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 12 Rev. 2.5 20.09.2013
Ir r m
90% Ir r m
10% Ir r m
di /dtF
tr r
IF
i,v
tQS
QF
tS
tF
VR
di /dtr r
Q =Q Qr r S F
+
t =t tr r S F
+
Figure C. Definition of diodes switching characteristics
p(t)1 2 n
T (t)j
11
2
2
n
n
T C
r r
r
r
rr
Figure D. Thermal equivalent circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
IKA06N60T TRENCHSTOP™ Series
IFAG IPC TD VLS 13 Rev. 2.5 20.09.2013
Published by Infineon Technologies AG 81726 Munich, Germany © 2013 Infineon Technologies AG All Rights Reserved.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.