trenchstoptm th - infineon technologies

Datasheet PleasereadtheImportantNoticeandWarningsattheendofthisdocument V2.1www.infineon.com 2020-07-27

IKW75N65RH5

HybridCoolSiCTMIGBT

TRENCHSTOPTM5H5IGBTco-packedwithhalf-rated6thgenerationCoolSiCTMSchottkybarrierdiodeFeaturesandBenefits:

•Ultra-lowswitchinglossesduetothecombinationofTRENCHSTOPTM5andCoolSiCTMtechnology•Benchmarkefficiencyinhardswitchingtopologies•Plug-and-playreplacementofpuresilicondevices•Maximumjunctiontemperature175°C•QualifiedaccordingtoJEDECfortargetapplications•Pb-freeleadplating;RoHScompliant•CompleteproductspectrumandPSpicemodels:http://www.infineon.com/igbt/

PotentialApplications:

•IndustrialPowerSupplies-IndustrialSMPS-IndustrialUPS•EnergyGeneration-SolarStringInverter•EnergyDistribution-EnergyStorage•Infrastructure–Charge-Charger

ProductValidation:

QualifiedforapplicationslistedabovebasedonthetestconditionsintherelevanttestsofJEDEC20/22

Packagepindefinition:

•Pin1-gate•Pin2&backside-collector•Pin3-emitter

G

C

E

12

3

KeyPerformanceandPackageParametersType VCE IC VCEsat,Tvj=25°C Tvjmax Marking PackageIKW75N65RH5 650V 75A 1.65V 175°C K75ERH5 PG-TO247-3

Datasheet 2 V2.12020-07-27

IKW75N65RH5

HybridCoolSiCTMIGBT

TableofContents

Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13

Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14

Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15

Datasheet 3 V2.12020-07-27

IKW75N65RH5

HybridCoolSiCTMIGBT

MaximumRatingsForoptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.

Parameter Symbol Value UnitCollector-emittervoltage,Tvj≥25°C VCE 650 V

DCcollectorcurrent,limitedbyTvjmaxTc=25°CvaluelimitedbybondwireTc=100°C

IC 80.075.0

A

Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 300.0 A

Turn off safe operating areaVCE≤650V,Tvj≤175°C,tp=1µs - 300.0 A

Diodeforwardcurrent,limitedbyTvjmaxTc=25°CTc=100°C

IF 45.730.7

A

Diodepulsedcurrent,tplimitedbyTvjmax1) IFpuls 112.5 A

Gate-emitter voltageTransientGate-emittervoltage(tp≤10µs,D<0.010) VGE

±20±30 V

PowerdissipationTc=25°CPowerdissipationTc=100°C Ptot

395.0198.0 W

Operating junction temperature Tvj -40...+175 °C

Storage temperature Tstg -55...+150 °C

Soldering temperature,wave soldering 1.6mm (0.063in.) from case for 10s 260 °C

Mounting torque, M3 screwMaximum of mounting processes: 3 M 0.6 Nm

ThermalResistance

Valuemin. typ. max.

Parameter Symbol Conditions Unit

RthCharacteristics

IGBT thermal resistance,junction - case Rth(j-c) - - 0.38 K/W

Diode thermal resistance,junction - case Rth(j-c) - - 1.20 K/W

Thermal resistancejunction - ambient Rth(j-a) - - 40 K/W

1) Pulse current level depends on Tvj of diode chip, see also Fig. "Maximum pulse current as a function of junction temperature"

Datasheet 4 V2.12020-07-27

IKW75N65RH5

HybridCoolSiCTMIGBT

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.


StaticCharacteristic

Collector-emitter saturation voltage VCEsat

VGE=15.0V,IC=75.0ATvj=25°CTvj=125°CTvj=175°C

---

1.651.851.95

2.10--

V

Diode forward voltage VF

VGE=0V,IF=30.0ATvj=25°CTvj=125°CTvj=175°C

---

1.351.551.65

1.50--

V

Gate-emitter threshold voltage VGE(th) IC=0.75mA,VCE=VGE 3.2 4.0 4.8 V

Zero gate voltage collector current ICESVCE=650V,VGE=0VTvj=25°CTvj=175°C

--

-2500

1000-

µA

Zero gate voltage collector current ICES VCE=480V,VGE=0VTvj=25°C - - 30 µA

Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA

Transconductance gfs VCE=20V,IC=75.0A - 105.0 - S

ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified

Valuemin. typ. max.


DynamicCharacteristic

Input capacitance Cies - 4000 -

Output capacitance Coes - 460 -

Reverse transfer capacitance Cres - 15 -

VCE=25V,VGE=0Vf=250kHz pF

Gate charge QGVCC=520V,IC=75.0A,VGE=15V - 168.0 - nC

Internal emitter inductancemeasured 5mm (0.197 in.) fromcase

LE - 13.0 - nH

SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=25°CTurn-on delay time td(on) - 26 - ns

Rise time tr - 9 - ns

Turn-off delay time td(off) - 180 - ns

Fall time tf - 15 - ns

Turn-on energy Eon - 0.36 - mJ

Turn-off energy Eoff - 0.30 - mJ

Total switching energy Ets - 0.66 - mJ

Tvj=25°C,VCC=400V,IC=37.5A,VGE=0.0/15.0V,RG(on)=9.0Ω,RG(off)=9.0Ω,Lσ=30nH,Cσ=30pFLσ,CσfromFig.EEnergy losses include “tail” anddiode reverse recovery.

Datasheet 5 V2.12020-07-27

IKW75N65RH5

HybridCoolSiCTMIGBT

Turn-on delay time td(on) - 26 - ns








SwitchingCharacteristic,InductiveLoad

Valuemin. typ. max.


IGBTCharacteristic,atTvj=150°CTurn-on delay time td(on) - 24 - ns








Turn-on delay time td(on) - 20 - ns








Datasheet 6 V2.12020-07-27

IKW75N65RH5

HybridCoolSiCTMIGBT

Figure 1. Powerdissipationasafunctionofcasetemperature(Tvj≤175°C)

TC,CASETEMPERATURE[°C]

Ptot ,PO

WER

DISSIPA

TION[W

]

25 50 75 100 125 150 1750

40

80

120

160

200

240

280

320

360

400

Figure 2. Collectorcurrentasafunctionofcasetemperature(VGE≥15V,Tvj≤175°C)

TC,CASETEMPERATURE[°C]

IC,C

OLLEC

TORCURREN

T[A]

25 50 75 100 125 150 1750

10

20

30

40

50

60

70

80

90

Figure 3. Typicaloutputcharacteristic(Tvj=25°C)

VCE,COLLECTOR-EMITTERVOLTAGE[V]

IC,C

OLLEC

TORCURREN

T[A]

0 1 2 3 4 50

30

60

90

120

150

180

210

240

270

300

VGE=20V

18V

15V

12V

10V

8V

7V

6V

5V

Figure 4. Typicaloutputcharacteristic(Tvj=150°C)


IC,C

OLLEC

TORCURREN

T[A]

0 1 2 3 4 50

30

60

90

120

150

180

210

240

270

300

VGE=20V

18V

15V

12V

10V

8V

7V

6V

5V

Datasheet 7 V2.12020-07-27

IKW75N65RH5

HybridCoolSiCTMIGBT

Figure 5. Typicaltransfercharacteristic(VCE=20V)

VGE,GATE-EMITTERVOLTAGE[V]

IC,C

OLLEC

TORCURREN

T[A]

2.5 3.5 4.5 5.5 6.5 7.5 8.5 9.50

30

60

90

120

150

180

210

240

270

300Tj=25°CTj=150°C

Figure 6. Typicalcollector-emittersaturationvoltageasafunctionofjunctiontemperature(VGE=15V)

Tvj,JUNCTIONTEMPERATURE[°C]

VCEsat,C

OLLEC

TOR-EMITTE

RSAT

URAT

ION[V

]

25 50 75 100 125 150 1750.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50IC=18.75AIC=37.5AIC=75A

Figure 7. Typicalswitchingtimesasafunctionofcollectorcurrent(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,RG=9Ω,DynamictestcircuitinFigure E)

IC,COLLECTORCURRENT[A]

t,SW

ITCHINGTIMES

[ns]

0 25 50 75 100 125 150 175 200 2251

10

100

1000td(off)

tftd(on)

tr

Figure 8. Typicalswitchingtimesasafunctionofgateresistor(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,IC=37.5A,DynamictestcircuitinFigure E)

RG,GATERESISTOR[Ω]

t,SW

ITCHINGTIMES

[ns]

0 5 10 15 20 25 30 35 401

10

100

1000td(off)

tftd(on)

tr

Datasheet 8 V2.12020-07-27

IKW75N65RH5

HybridCoolSiCTMIGBT

Figure 9. Typicalswitchingtimesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=15/0V,IC=37.5A,RG=9Ω,DynamictestcircuitinFigure E)


t,SW

ITCHINGTIMES

[ns]

25 50 75 100 125 150 1751

10

100

1000td(off)

tftd(on)

tr

Figure 10. Gate-emitterthresholdvoltageasafunctionofjunctiontemperature(IC=0.75mA)


VGE(th) ,GAT

E-EM

ITTE

RTHRES

HOLD

VOLTAG

E[V]

25 50 75 100 125 1501.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5typ.

Figure 11. Typicalswitchingenergylossesasafunctionofcollectorcurrent(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,RG=9Ω,DynamictestcircuitinFigure E)

IC,COLLECTORCURRENT[A]

E,S

WITCHINGENER

GYLO

SSES

[mJ]

0 25 50 75 100 125 150 175 200 2250

2

4

6

8

10

12

14Eoff

Eon

Ets

Figure 12. Typicalswitchingenergylossesasafunctionofgateresistor(inductiveload,Tvj=150°C,VCE=400V,VGE=15/0V,IC=37.5A,DynamictestcircuitinFigure E)

RG,GATERESISTOR[Ω]

E,S

WITCHINGENER

GYLO

SSES

[mJ]

0 5 10 15 20 25 30 35 400.00

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50Eoff

Eon

Ets

Datasheet 9 V2.12020-07-27

IKW75N65RH5

HybridCoolSiCTMIGBT

Figure 13. Typicalswitchingenergylossesasafunctionofjunctiontemperature(inductiveload,VCE=400V,VGE=15/0V,IC=37.5A,RG=9Ω,DynamictestcircuitinFigure E)


E,S

WITCHINGENER

GYLO

SSES

[mJ]

25 50 75 100 125 150 1750.0

0.2

0.4

0.6

0.8

1.0

1.2Eoff

Eon

Ets

Figure 14. Typicalswitchingenergylossesasafunctionofcollectoremittervoltage(inductiveload,Tvj=150°C,VGE=15/0V,IC=37.5A,RG=9Ω,DynamictestcircuitinFigure E)


E,S

WITCHINGENER

GYLO

SSES

[mJ]

200 250 300 350 400 450 5000.0

0.2

0.4

0.6

0.8

1.0

1.2Eoff

Eon

Ets

Figure 15. Typ.reversecurrentvs.reversevoltageasafunctionofTvj


ICES,ZER

OGAT

EVO

LTAG

ECOLLEC

TORCURREN

T[A]

100 200 300 400 500 600 7001E-8

1E-7

1E-6

1E-5

1E-4

0.001

0.01

0.1Tvj=175°C

Tvj=150°C

Tvj=100°C

Tvj=25°C

Figure 16. Typicalgatecharge(IC=75A)

QGE,GATECHARGE[nC]

VGE ,GAT

E-EM

ITTE

RVOLTAG

E[V]

0 20 40 60 80 100 120 140 160 1800

2

4

6

8

10

12

14

16130V520V

Datasheet 10 V2.12020-07-27

IKW75N65RH5

HybridCoolSiCTMIGBT

Figure 17. Typicalcapacitanceasafunctionofcollector-emittervoltage(VGE=0V,f=250kHz)


C,C

APAC

ITAN

CE[pF]

0 5 10 15 20 25 301

10

100

1000

1E+4Cies

Coes

Cres

Figure 18. IGBTtransientthermalresistance(D=tp/T)

tp,PULSEWIDTH[s]

Zth(j -c

) ,TR

ANSIEN

TTH

ERMAL

RES

ISTA

NCE[K/W

]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.036770995.2E-5

20.034689953.7E-4

30.0336813.7E-4

40.0878943.3E-3

50.0855040.021173

60.101460.107752

Figure 19. Diodetransientthermalimpedanceasafunctionofpulsewidth(D=tp/T)

tp,PULSEWIDTH[s]

Zth(j -c

) ,TR

ANSIEN

TTH

ERMAL

RES

ISTA

NCE[K/W

]

1E-6 1E-5 1E-4 0.001 0.01 0.1 10.001

0.01

0.1

1

D=0.5

0.2

0.1

0.05

0.02

0.01

single pulse

i:ri[K/W]:τi[s]:

10.3861013.6E-4

20.4800292.4E-3

30.333870.01997

Figure 20. Maximumpulsecurrentasafunctionofjunctiontemperature


IFpuls ,DIODEPU

LSED

CURREN

T[A]

25 50 75 100 125 150 1750

50

100

150

200

250

300

350

Datasheet 11 V2.12020-07-27

IKW75N65RH5

HybridCoolSiCTMIGBT

Figure 21. Typicaldiodeforwardcurrentasafunctionofforwardvoltage

VF,FORWARDVOLTAGE[V]

IF ,FORWAR

DCURREN

T[A]

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.00

20

40

60

80

100

120Tj=25°CTj=150°C

Figure 22. Typicaldiodeforwardvoltageasafunctionofjunctiontemperature


VF ,FO

RWAR

DVOLTAG

E[V]

25 50 75 100 125 150 1750.0

0.5

1.0

1.5

2.0

2.5

3.0IF=15AIF=30AIF=60A

Datasheet 12 V2.12020-07-27

IKW75N65RH5

HybridCoolSiCTMIGBT

MILLIMETERS

5.44

c

Q

E3

E2

D

E

D1

D2

L1

e

L

S

P

E1

b1

A

A1

b

A2

b2

0.38

6.04

5.35

1.00

3.40

3.85

20.70

13.08

15.50

0.51

3.50

19.80

12.38

1.60

4.70

2.20

1.00

1.50

2.57

0.89

6.30

6.25

17.65

2.60

5.10

14.15

3.70

21.50

16.30

20.40

1.35

4.50

2.41

5.30

2.60

1.40

2.50

3.43

1

REVISION

06

25.07.2018

ISSUE DATE

EUROPEAN PROJECTION

0

SCALE

5mm

DOCUMENT NO.

Z8B00003327

DIMENSIONSMIN. MAX.

3:1

2 3 4

Package Drawing PG-TO247-3

Datasheet 13 V2.12020-07-27

IKW75N65RH5

HybridCoolSiCTMIGBT

t

a b

td(off)

tf t

rtd(on)

90% IC

10% IC

90% IC

10% VGE

10% IC

t

90% VGE

t

t

90% VGE

VGE

(t)

t

t

tt1 t

4

2% IC

10% VGE

2% VCE

t2

t3

E

t

t

V I toff

= x x d

1

2

CE CE

t

t

V I ton

= x x d

3

4

CE C

CC

dI /dtF

dI

I,V

Figure A.

Figure B.

Figure C. Definition of diode switchingcharacteristics

Figure E. Dynamic test circuit

Figure D.

I (t)C

Parasitic inductance L ,

parasitic capacitor C ,

relief capacitor C ,

(only for ZVT switching)

s

s

r

t t t

Q Q Qrr a b

rr a b

= +

= +

Qa Qb

V (t)CE

VGE

(t)

I (t)C

V (t)CE

Testing Conditions

Datasheet 14 V2.12020-07-27

IKW75N65RH5

HybridCoolSiCTMIGBT

RevisionHistory

IKW75N65RH5

Revision:2020-07-27,Rev.2.1Previous Revision

Revision Date Subjects (major changes since last revision)

1.1 2020-03-20 Preliminary Data Sheet

2.1 2020-07-27 Final Data Sheet

Trademarks

Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners.

PublishedbyInfineonTechnologiesAG81726München,Germany©InfineonTechnologiesAG2020.AllRightsReserved.

ImportantNoticeTheinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics(“Beschaffenheitsgarantie”).Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.

Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthisdocumentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseoftheproductofInfineonTechnologiesincustomer’sapplications.

Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’stechnicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductinformationgiveninthisdocumentwithrespecttosuchapplication.

Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearestInfineonTechnologiesoffice(www.infineon.com).

PleasenotethatthisproductisnotqualifiedaccordingtotheAECQ100orAECQ101documentsoftheAutomotiveElectronicsCouncil.

WarningsDuetotechnicalrequirementsproductsmaycontaindangeroussubstances.ForinformationonthetypesinquestionpleasecontactyournearestInfineonTechnologiesoffice.

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trenchstoptm th - infineon technologies

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