two mechanisms of resistive switching in peroveskite oxide...
TRANSCRIPT
![Page 1: Two Mechanisms of Resistive Switching in Peroveskite Oxide ...lptms.u-psud.fr/impact2012/files/2012/09/jin.pdfSTO SRO BFO Pt o A-4 -2 0 2 4 -2 0 2 Current (µ A) Voltage(V) Current-voltage](https://reader034.vdocument.in/reader034/viewer/2022051807/6002d642b8933a4c635783cb/html5/thumbnails/1.jpg)
Kuijuan Jin
Institute of Physics Chinese Academy of Sciences Beijing 100190
Two Mechanisms of Resistive Switching in Peroveskite Oxide Thin Films
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Collaborators
Prof. Can wang Zhongtang Xu Dr. Lin Gu Dr. Chen Ge Ruiqiang Zhao Dr. Haizhong Guo Yuling Jin Prof. Meng He, Prof. Guozhen Yang
Institute of Physics Chinese Academy of Sciences
School of Microelectronics
Fudan University
Anquan Jiang
Yonggang Zhao
Department of Physics
Tsinghua University
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Outline
Background
Ferroelectric Polarization Controlled Resistive Switching and Switchable Diode Effect in BFO films
Growth of BFO epitaxial thin films Evidence for ferroelectric resistive switching Switchable diode effect and selfconsistent calculation
Evidence for a crucial role played by the oxygen vacancies
in LaMnO3 resistive switching memories
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Resistive switching & Classification
Unipolar switching (VSET>VRESET)
Bipolar switching (VSET~ -VRESET)
R. Waser et al, Adv. Mater. 21, 2632(2009)
Ferroelectric resistive
switching
Switching modes: Switching mechanisms:
Non-Ferroelectric
resistive switching
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Ferroelectric resistive switching
Ferroelectric resistive switching ≠ Resistive switching in ferroelectrics
Nonferroelectric resistive switching (TiO2, CuO, SrTiO3, Pr0.7Ca0.3MnO3, etc) Related to redox reaction, migrating of ions and vacancies, etc
Formation of conductive filaments
Polarization switching Ferroelectric resistive switching Ferroelectric tunneling effect (super thin films or FTJs) Switchable diode effect (thin films & bulks)
{ Bipolar
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Switchable diode effect in BiFeO3 crystal
SCIENCE 324, 63(2009)
The forward direction of the diode is determined by the ferroelectric polarization, and it can be reproducibly switched by large external electric fields.
BFO crystal
BFO crystal bulk with Ag electrodes
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Our results
observed in epitaxial BiFeO3 thin films
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Epitaxial growth of BFO/SRO/STO by Laser-MBE
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BFO
SRO
001
100
[010]
[100]
[001]
20 30 40 50 60 70
102
103
104
105
0 90 180 270 360 STO
(003
)
BFO
/SRO
(003
)
STO
(002
)
BFO
/SRO
(002
)
Inte
nsity
(arb
itrar
y un
its)
2θ
BFO
/SRO
(001
)ST
O(0
01)
Inte
nsity
(arb
. uni
ts)
φ (degree)
(013)
XRD and HRTEM characterization of BFO thin film
![Page 10: Two Mechanisms of Resistive Switching in Peroveskite Oxide ...lptms.u-psud.fr/impact2012/files/2012/09/jin.pdfSTO SRO BFO Pt o A-4 -2 0 2 4 -2 0 2 Current (µ A) Voltage(V) Current-voltage](https://reader034.vdocument.in/reader034/viewer/2022051807/6002d642b8933a4c635783cb/html5/thumbnails/10.jpg)
-6 -3 0 3 6
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
Curr
ent (µA
)
Voltage(V)
1
2
3
4
STOSROBFO
Pt Ao
-4 -2 0 2 4
-2
0
2
Curr
ent (µA
)Voltage(V)
Current-voltage hysteresis loops
Bipolar resistive switching Switchable diode effect
25 cycles
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-6 -3 0 3 6-2.0-1.5-1.0-0.50.00.51.01.52.0
Curr
ent (µA
)
Voltage(V)
12
3
4
Current hysteresis & Ferroelectricity
-30 -20 -10 0 10 20 30-80
-60
-40
-20
0
20
40
60
80
-5 0 5
-3
0
3
6 V 8 12 15 18 22 26 30
Pola
rizat
ion
(µC/
cm2 )
Voltage (V)
(b)
Pola
rizat
ion
(µC/
cm2 )
Drive Voltage
Ferroelectric loops measured at 50 kHz with various voltages 6–30 V
IV curves measured with various sweeping voltage
Appl. Phys. Lett. 98, 192901 (2011)
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Direct evidence for ferroelectric resistive switching
-20 -10 0 10 20
-60-40-20
0204060
-20 -10 0 10 200.00.20.40.60.81.01.21.4
Voltage of the applied pulse (V)
P (µ
C/cm
2 )
J read
at 4
V (m
A/cm
2 )
OFF
ON
Adv. Mater. 23, 1277 (2011)
Piezoelectric phase image of original preferred polarization patterns (downward) switched upward through PFM tip scanning of the film surface at –8 V within a square area of 3 × 3 μ m 2 . After that, the polarization in the center 1 × 1 μ m 2 area is scanned downward at + 8 V. c). The diode current mapping at –3 V.
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Toward a ferroelectric resistive memory
100 101 102 103 104 105 106 10710-2
10-1
100
101
102
Polarized at-10 V/1 µs+10 V/1 µs
|J| (
mA/
cm2 )
time (s)
Reading at -2.0 V
ON
OFF
One month
Non-destructive readout nonvolatile RAM This device has a memory that lasts for months, a sufficiently high on current and on/off ratio to permit ordinary sense amplifiers to measure “1” or “0”, and is fully compatible with complementary metal-oxide semiconductor processing.
Adv. Mater. 23, 1277 (2011) Appl. Phys. Lett. 98, 192901 (2011)
-2 -1 0 1 2-6
-4
-2
0
2
4
6
-2 -1 0 1 2 -2 -1 0 1 2
Polarized downat -8 V
Polarized upat 8 V
Curre
nt (n
A)
Virgin state
Voltage (V)
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Numerical calculation for the MFM structures
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0 100 200 300
-5.6
-5.4
-5.2
-5.0
EF
Ener
gy B
and
(eV)
X (nm)
EC
0 100 200 3001010
1014
1018
1022
Char
ge D
ensit
y (c
m-3)
X (nm)
Doping
Non Polarization for Pt/BFO/Pt
Schematic Structures Band Diagram
Charge Density I-V
-2 -1 0 1 2-400
-300
-200
-100
0
100
200
300
400
Curre
nt D
ensit
y (m
A/cm
2 )
Voltage (V)
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0 100 200 300
-5.6
-5.4
-5.2
-5.0
EF
Ener
gy B
and
(eV)
X (nm)
EC
Right Polarization for Pt/BFO/Pt
Schematic Structures Band Diagram
Charge Density I-V
-2 -1 0 1 2-400
-300
-200
-100
0
100
200
300
400
Curre
nt D
ensit
y (m
A/cm
2 )
Voltage (V)0 100 200 300
1010
1014
1018
1022
Char
ge D
ensit
y (c
m-3)
X (nm)
Doping
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0 100 200 300
-5.6
-5.4
-5.2
-5.0
EFEner
gy B
and
(eV)
X (nm)
EC
0 100 200 3001010
1014
1018
1022
Char
ge D
ensit
y (c
m-3)
X (nm)
Doping
Left Polarization for Pt/BFO/Pt
Schematic Structures Band Diagram
Charge Density I-V
-2 -1 0 1 2-400
-300
-200
-100
0
100
200
300
400
Curre
nt D
ensit
y (m
A/cm
2 )
Voltage (V)
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0 100 200 300
-5
-4
EF
Ene
rgy
Ban
d (e
V)
X (nm)
EC
RP
0 100 200 300
-5
-4
EF
Ene
rgy
Ban
d (e
V)
X (nm)
EC
LP
0 100 200 30010-10
10-5
100
105
1010
1015
1020
1025
RP
Cha
rge
Den
sity
(cm
-3)
X (nm)
Doping
SRO PtBFO
0 100 200 30010-10
10-5
100
105
1010
1015
1020
1025
LP
Cha
rge
Den
sity
(cm
-3)
X (nm)
Doping
Calculated results for SrRuO3/BiFeO3/Pt
-2 -1 0 1 2-8
-4
0
4
8
Experimental Data Theoretical Results
RP
Cur
rent
(nA)
Voltage (V)
-2 -1 0 1 2-8
-4
0
4
8
Experimental Data Theoretical Results
LP
Cur
rent
(nA)
Voltage (V)
Appl. Phys. Lett., 99 (2011) 063509 Theoretical proof for ferroelectric resistive switching
Interface barrier playing an important role in the Switchable diode effect
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J. Appl. Phys. 111, 054104 (2012)
Doping density effect
Thickness of the film Thickness of the film
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Thickness effect
J. Appl. Phys. 111, 054104 (2012)
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Conclusions
Switchable diode effect & ferroelectric resistive switching were observed in the epitaxial BFO thin films.
Direct evidence for the ferroelectric resistive switching. Our theoretical results verify that the ferroelectric
polarization can modulate the interface barrier and dominate the switchable diode effect.
Open a way to novel ferro-resistive memory
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Outline
Background
Ferroelectric Polarization Controlled Resistive Switching and Switchable Diode Effect in BFO films
Growth of BTO epitaxial thin films Evidence for ferroelectric resistive switching Switchable diode effect and selfconsistent calculation
Evidence for a crucial role played by the oxygen vacancies
in LaMnO3 resistive switching memories
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Thickness:~100nm
substrate: SrTiO3:Nb (0.8 wt%) (SNTO)
SXRD patterns for LaMnO3 thin films
SXRD for films fabricated under the various oxygen pressures 10, 5×10-2, and 5×10-4 Pa are 3.892, 3.973, and 4.014 Å, respectively.
c-axis lattice constant of the LMO films becomes larger, owing to the increase of the oxygen vacancies
high-resolution Synchrotron X-ray diffractometry by the BL14B1 beam line of Shanghai Synchrotron Radiation Facility (SSRF).
![Page 24: Two Mechanisms of Resistive Switching in Peroveskite Oxide ...lptms.u-psud.fr/impact2012/files/2012/09/jin.pdfSTO SRO BFO Pt o A-4 -2 0 2 4 -2 0 2 Current (µ A) Voltage(V) Current-voltage](https://reader034.vdocument.in/reader034/viewer/2022051807/6002d642b8933a4c635783cb/html5/thumbnails/24.jpg)
An aberration-corrected annular-bright-field scanning transmission electron micrographs of the LMO/SNTO interfaces along the [001] axis corresponding to oxygen pressures of 10 Pa, 5×10-2 Pa, and 5×10-4 Pa,
Films fabricated in lower oxygen pressure are with more oxygen vacancies
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LaMnO3 resistive switching memories
Small 8, 1279–1284 (2012)
Typical I-V curves for Pt/LMO/SNTO devices under various oxygen pressure
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The ROFF/RON ratios are indicated by numbers.
LaMnO3 resistive switching memories
Pulse measurements of the Pt/LMO/SNTO devices with fabrication oxygen pressure of 5×10-4 Pa. The pulse condition for HRS is +5 V with a pulse width of 1 ms and for LRS is −5 V with a pulse width of 1 ms. The resistance was readout at 0.1 µA.
None obvious decay was observed within 10000 cycles
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2
2
( ) ( ( ) ( ) )s
x q p x n x Ndxψ
ε∂
= − − +∂
( )( ) 1 ( )nJ xn x U xt q x
∂∂= −
∂ ∂( )( ) 1 ( )pJ xp x U x
t q x∂∂
= − −∂ ∂
( )( ) ( ) nn n
xJ x qu n xx
φ∂= −
∂( )
( ) ( ) pp p
xJ x qu p x
xφ∂
= −∂
( ) ( ) ( )n pJ x J x J x= +
( ) exp( ( ( ) ( )))i nqn x n x x
kTψ φ= −
( ) exp( ( ( ) ( )))i pqp x n x x
kTφ ψ= −
(1)
(2) (3) (4) (5) (6)
(7) (8)
Theoretical modelling
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different states for Pt/LMO/SNTO at the Pt/LMO Schottky interface. When negative voltage applied on the TE, the oxygen vacancies will accumulate at the Pt/LMO interface, making the doping density at the Pt/LMO increase, while the oxygen vacancies will migrate away from the Pt/LMO interface, giving rise to the decrease of doping density under the forward bias.
Oxygen – Oxygen vacancy + Negative bias + moving to the interface S2 Forward bias + moving away from interface S3
Small 8, 1279–1284 (2012)
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1. The results of X-ray diffraction verify that with the decrease of the oxygen pressures, the c-axis lattice constant of the LMO films becomes larger, owing to the increase of the oxygen vacancies.
2. An ABF STEM with atomic resolution and sensitivity for light elements is used, which clearly shows that the number of oxygen vacancies increases with the decrease of oxygen pressures during fabrication.
3. The resistive switching property becomes more pronounced with more oxygen vacancies contained in LMO films.
4. A numerical model based on the modification of the interface property induced by the migration of oxygen vacancies in these structures is proposed to elucidate the underlying physical origins.
Conclusion
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Thank you for your attention!
http://L03.iphy.ac.cn
Acknowledgement: People in L03 group
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S1 S2 S3
Concentration (cm-3)
Mobility (cm2/(V.s))
Band Gap (eV)
Conduction band(eV)
9.8×1019
1.5
1.55
4.6
3.5×1019
2
1.6
4.35
5×1018
7
2.0
3.4
0ε
0m
0m
Dielectric constant: 10
Carrier lifetime: 10-9s Electron mass: 3
Hole mass: 5
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The experimental (diamonds) and calculated (lines) I-V in the case of RP (a) and LP (b) for the SrRuO3/BiFeO3/Pt structure.
The parameters used in our calculations
Appl. Phys. Lett., 98 (2011) 192901; Appl. Phys. Lett., 99 (2011) 063509
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J. Appl. Phys. 111, 054104 (2012)
铁电薄膜介电常数的影响
Ferroelectric Diode
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-3000 -2000 -1000 0 1000 2000 3000
-20
-10
0
10
20BFO/STO(001)
45 nm 90 180 360
Mag
netiz
atio
n (e
mu/
cm3 )
H(Oe)
Ferromagnetic property at room temperature
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Growth of oxide thin films by Laser Molecular Beam Epitaxy
SRO/STO
40 60 80 100 120
120
180
240laser off
Inte
nsity
(arb
. uni
ts)
Time
SrRuO3 on STO substrateat 2*10-4 Pa, 300 pulses
laser on
RHEED oscillations
Schematic illustration of laser MBE system
Vacuum chamber
RHEED Screen
Substrate heater
RHEED Gun Laser
Lens
Multi-target carrousel
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Giant resistive switching in FTJs ?
E. Y. Tsymbal, et al, SCIENCE 313, 181(2006)
Mechanisms affecting tunneling in ferroelectric tunnel junctions (FTJs): (a) electrostatic potential at the interface, (b) interface bonding, (c) strain.
“… ferroelectric tunnel junctions, which take advantage of a ferroelectric as the barrier potential…may have a profound effect on the conductance leading to a resistive switching…”
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Science, 324 (2009) 63 JAP, 109 (2011) 084108
BiFeO3
BaTiO3
Switchable diode effect in bulk ferroelectrics
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Nature Mater., 8 (2009) 485
Adv. Mater., 23 (2011) 1277
Appl. Phys. Lett., 98 (2011) 192901
Phys. Rev. B, 84 (2011) 125305
Switchable diode effect in thin film ferroelectrics
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材料体系分类 过渡金属氧化物:NiOx,TiOx,Nb2O5,Ta2O5,CuOx,WOx,CoOx…
钙钛矿氧化物:SrTiO3,La1-xCaxMnO3,Pr1-xCaxMnO3…
单极性RS效应 双极性RS效应 R. Waser Nat. Mater, 6 833 (2007)
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Tunneling electroresistance effect
A combination of PFM and C-AFM techniques on nanometer-thick epitaxial BaTiO3 (4.8 nm) single crystal thin films
Nano Lett.,9, 3539( Aug. 2009)
Giant TER in ultrathin BTO/LSMO films (PFM phase image and C-AFM resistance mapping)
Nature 460, 81(Jul. 2009)