ug484: si828x-hb-evb user’s guide - silabs.com

UG484: Si828x-HB-EVB User’s Guide

The Si828x-HB-EVB (Si828x Half-Bridge EVB) is a versatile plat-form for demonstrating the features of the Si828x with SiC/IGBTdevices in a half-bridge circuit configuration. The board includesthe Si8285 to drive the high-side switch and an Si8284 to drive thelow-side switch.The Si8284 has an integrated dc-dc circuit that operates with an external MOSFET anda transformer to generate two pairs of isolated positive and negative voltages to powerboth the Si8285 and the Si8284.

The Si828x-HB-EVB has a “non-overlap” circuit to take PWM signal input from a single-channel function generator to produce complimentary PWM signals with programabledead time control to drive the inputs of the Si8285 and Si8284 gate drivers. The inputcircuit can also be configured to operate with two channel function generators to drivethe input of the Si8285 and Si8284 directly.

There are terminals on the outputs of the half-bridge power circuit that can be arrangedto support double pulse (switching loss), crosstalk, and Si828x DESAT short circuit pro-tection tests. Also, the board can be configured to operate with an external inductor (notincluded) in half-bridge buck or boost operation for dv/dt and dc-dc efficiency testing.

The board has connections for current and voltage probes to support data collectionduring tests. Operating the board is simple with the assistance of the LED indicators(RDY, /FLT), current sensor (not included), voltage measurement (BNC, SMA) connec-tors, and the /FLT reset button.

KEY FEATURES

• Half-bridge demonstration board for SiC/IGBT

• Operates up to 1 kV DC-Rail input• Demonstrates half-bridge operations

(double pulse, buck, boost)• Demonstrates desaturation protection• Demonstrates adjustable soft shutdown

capability• Onboard “non-overlap” circuit to convert

single PWM signal into complementarysignals with independent adjustabledeadtime

• Demonstrates Si8284 integrated dc-dc togenerate all necessary voltages to powerboth high- and low-side gate drivers

• Supports IGBT/SiC in TO-247 packagesin standard 3-pin and 4-pin configurationswith Kelvin Source connection

• Supports gate current booster option

Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com1 Rev. 0.1 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • December 21, 2021 1

Table of Contents1. Schematics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

2. Si828x-HB-EVB Connections for Testing . . . . . . . . . . . . . . . . . . . . . 62.1 Input Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

2.2 Input Signals. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.2.1 Single PWM Input . . . . . . . . . . . . . . . . . . . . . . . . . . . 72.2.2 Direct PWMs Connection to Si8285 and Si8281 . . . . . . . . . . . . . . . . . 7

3. Scope Probe Connections and DESAT Configurations . . . . . . . . . . . . . . . . 83.1 Gate, VDS, and Low-Side Current Monitors . . . . . . . . . . . . . . . . . . . . 8

3.2 DESAT Monitor/Disable . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

4. Test Configurations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94.1 Double Pulse Test . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4.1.1 Double Pulse Test on Low-Side Switching Device . . . . . . . . . . . . . . . . .104.1.2 Double Pulse Test on High-Side Switching Device . . . . . . . . . . . . . . . .10

4.2 Cross Talk Testing . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10

4.3 DESAT Shorted Circuit Test . . . . . . . . . . . . . . . . . . . . . . . . .114.3.1 DESAT Shorted Circuit Test on Low-Side Switching Device . . . . . . . . . . . . .114.3.2 DESAT Shorted Circuit Test on High Side Switching Device . . . . . . . . . . . . .12

4.4 Buck/Boost DCDC Testing . . . . . . . . . . . . . . . . . . . . . . . . . .124.4.1 Si828x-HB-EVB in Buck DC-DC Operation . . . . . . . . . . . . . . . . . . .134.4.2 Si828x-HB-EVB in Boost DC-DC Operation . . . . . . . . . . . . . . . . . . .13

5. Current Booster Option . . . . . . . . . . . . . . . . . . . . . . . . . . 14

6. Bill of Materials . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15


1. Schematics

PWM2

D115

1N4148WR342

2.2K

GATE1

J114

BNC

J115

BNC

Driv ers _Off

Function Genera tor

Primary Bias

PWM -

PWM1

JP101

2

3

DSAT1

VMID2

C112

10uF

R101

100

TP101DSAT1WHITE

TP109DSAT2WHITE

/RST

D114

1N4148W

R4061M

R4071M

R1302.2K

R4091M

R4081M

C12622uF

VDDA

R4101M

Buck-Out_Boos t-In

HV_Rail+

DSAT2

GATE2

VMID2

GATE2

TP106VMID1WHITE

R3391K

PWM +

J109

J103

J110

HV_Rail+

Driver 2

Driver2

/FLT

RDY

VD

DB

2

VDDA

IN +

VDDP

DSAT2

GATE2

VMID2

/RST

IN -

VD

DB

1

VS

SB

1

VM

ID1

J111

VMID1

Vout

VMID1

J101

GATE1

J112 J113

R333 0

R334 0

Driv ers _Off

R343 0

C104

0.1uF

Driver1

Driver1

/FLT

RDY

VDDA

IN +

DSAT1

GATE1

VMID1

/RST

IN -

VS

SB

1

VD

DB

1

R113

10K

R344

0

R10510K

Ctrl_Loop

DCDC control

VDDA

PWM -

Buck-Out_Boos t-In

HV Rail -

VMID2

VDDB2

TP121

PWM+ WHITE

R10310K

R335

10K

R33610K

Q1

C3M0016120D

D

G

S

Q2 C3M0016120DD

G

S

Q3

C3M0016120K

D

G

S

3

Q4

C3M0016120K

D

G

S

3

C118

10µF

C102

10000pF

R325

10.0

R4111M

R4121M

C119

10µF

C12110µF

R4131M

VDDB2

Buck-Out_Boos t-In

VDDA

R3370

R338

0

RST/

VDDA

PWM -

VDDA

L101

10uH

J105

HV Rail -

J106

C113270pF

C101

0.1uF

R11410K

TP105

GND_PRI

BLACK

C111270pF

TP120GND_SECBLUE

TP107WHITE

TP113

GND_PRIBLACK

VMID2

HV Rail -

TP102Rail VoltageWHITE

D104

D110

TO-247/264 HEAT SINK

U4TO-247/TO-264_HEATSINK

21

D105RED

D111RED

R1202.2K

TP114BLUE

J108

TP108COMPWHITE

J107

VDDP

TP104

GND_PRI

BLACK

B101nonoverlap_gen

VOA

VOB

VDDA

PWM +

PWM -

J102

123

C103

0.1uF

TP118

GND_PRI

BLACKTP119

GND_SECBLUE

TP112VMID2WHITE

R108

10K

R1062.2K

R111100

TP117

GND_PRI

BLACK

TP116

GND_PRIBLACK

S101MOMENTARY

C105

0.1uF

R1192.2K

R1072.2K

IDS Current Sens e

VDDP

TP115BLUE

C18010uF

VDDA

HV_Rail+

VDDB2

D101

US1K

D102

US1K

D107

US1K

D108

US1K

JP9

1

2

3

TP111CTRL_RAMP

WHITE

Gate Drv 2

Gate Drv 1

R424

10

Figure 1.1. Si828x-HB- EVB Half-Bridge Circuit

UG484: Si828x-HB-EVB User’s Guide • Schematics


C31210uF

TP309GATE2

T1

UTB02286S

16

11

14

9

8

7

6

3

1

2

R3301.0

R319150K

R3178.66K

C3110.1uF

C3140.1uF

C31510uF

R320200K

R323

4.02

VDDA

C313

470pF

C30610uF

C309

10uF

C307

0.1uF

C310

0.1uF

VMID2

TP305VSNS2

TP308COMP2

TP306VSSBx

TP307VDDBx

VH

VL

VDDB2

RDY

/FLT

VDDP

IN +

VDDA

VMID2

GATE2

DSAT2

/RST

C319

0.1uF

C316

0.1uF

R313

1.0

C320

2.2uF

D305

24V

R311

0.1

C318

TP304VMID2

VDDB2

IS307

R321 0.1

IS304I_VDDPx

IN -

C321

10pF

C322

10pF

R331

1.0

ISOLATION

U301

Si8281CD-IS

VDDA4

VH15

CLMP13

VSW2

GNDP1

NC18

VDDP3

DSAT17

VSNS20

/RST6

/FLT7

VDDB16

GNDA5

RDY8

COMP19

VL14

IN+9

IN-10

VMID12

VSSB11

C308

10uF

VSSB2

R332

1.0

VSSB1

D310

MBR0580S1

D306

MBR0580S1

D309

MBR0580S1

D302

MBR0580S1VDDB_IC1

D30324V

R327

100R328

100 CLMP2

VMID2

VSSB

VMID2

C301

10uF

C302

0.1uF

C304

0.1uF

C303

10uF

VMID1

D311

R345

100

Q6

TP301VDDB1

R346

30

TP302VMID1

TP303VSSB2

VSSB2

R301

1.0

C317

2.2uF

R306

1.0

IS308

R324

1.0

Figure 1.2. Low-Side Si8284 Gate Driver (Driver 2) with Integrated DC-DC

CLMP

VMID

VSSB

TP201VSNSx

C2020.1uF

C20110uF

R204

1.0

R2034.02

VDDA

VL

ISOLATION

U201

Si8285CD-A-IS

/RST4

CLMP11

VSSB9

VDDA2

GNDA1

VDDB14

NC3

VH13

NC16

RDY6

IN+7

VL12

/FLT5

IN-8

DSAT15

VMID10

VH

VDDB1

RDY

/FLT

IN +

VDDA

VMID1

GATE1

DSAT1

/RST

VSSB

C207

0.1uF

C203

0.1uF

Add Rx05 to ground VSSB

VDDB1

IS201

R201 0.1

VMID

IN -

C212

10pF

R208

100

R202

4.7K

R207

100

VSSB1

R2050CLMP

C211

0.1uF

C205C204

2.2uF

C208

2.2uF

R210

100

D201

MBR1H100SF

Q5

IS202R21130

Figure 1.3. High-Side Si8285 Gate Driver (Driver 1)



VOB

VOA

PWM +

C401nF

C421nF

U9BCD74AC04M

34

JP47

HEADER 1x3

1

2

3

VDDA

PWM -

VDDA

U9CCD74AC04M

56

U9DCD74AC04M

98

U9ECD74AC04M

1110

U9FCD74AC04M

1312

VDDA

U9ACD74AC04M

1 2

14

7

VDDA

R45

2K

1 3

2

R46

2K

1 3

2

C41

0.1uF

C39

0.1uF

J P4 Se lec tionsExterna l Function Genera tor 1-2Onboard Controlle r 2-3Idle No connec t

GN

D

U8ASN74HC00DR

1

23

147

U8BSN74HC00DR

2A4

2B5 2Y

6

U8CSN74HC00DR

3A9

3B10 3Y

8

U8DSN74HC00DR

4A12

4B13 4Y

11

R4710K

VDDA

Figure 1.4. Non-Overlap Dead Time Generator Circuit

HV Rail -

Buck-Out_Boos t-In

PWM -

VDDA

VDDB2

VMID2

C1162200pF

C12222nF

U108

PS2911

C124 22nFC1234.7uFR404 330K

R126

221K

R1271K

R1243.16K

R128499

D113

0.49V

R125

249KVDDA

VMID2

C1251uF

R11522K

U107

LT4430

Vin1

GND2

OC3

FB4

COMP5

OPTO6

Buck-Out_Boos t-In

C1274.7uF

R403

2K1 3

2TP123WHITE

TP122WHITE

TP124WHITE

C2160.047uF

TP113

GND_PRIBLACK

VMID2

C1150.1uF

C20910pFU106

TPS40200

RCSSCOMPFB GND

GDRVISNSVDDR116 33K

R118

1K

R4051M

R341

10K

VDDA

TP111PWM - WHITE

C210

10000pF

Figure 1.5. Control Loop for Buck Converter (Not Installed)



2. Si828x-HB-EVB Connections for Testing

Figure 2.1. Si828x-HB-EVB Input Power and Input Signals

DANGER! This board may contain high voltages of up to 1000 V.Do not touch the board after the high-voltage section has been energized!

2.1 Input Power

The Si828x-HB-EVB is powered by applying VDDP = 5 V (± 10%) to pin 3 (+) and Pin 2 (–) of the J102 connector. The Si8281 withintegrated dc-dc generates voltages to power both the Si8281 and Si8285 gate drivers. The RDY green LEDs (D104, D110) are lit whenproper VDDA, VDDBs, and VSSBs (VSSB is a negative voltage polarity) are present. There are test points to check the VDDB andVSSB voltage levels (reference to VMID). The VDDB and VSSB voltage levels can be adjusted by selecting the R319 and R317 values.

VDDB − VSSB = 1 . 05 × R319R317 + 1

The ratio between VDDB and VSSB voltages is determined by the T1 transformer turns ratio between the two secondary windings (seeUMEC UTB02286S transformer data sheet for details).

VDDB = VDDB − VSSB ×W7 − 8

W7 − 8 +W6 − 7

2.2 Input Signals

The Si828x-HB-EVB has flexible PWM input signal connections to support all testing configurations.

UG484: Si828x-HB-EVB User’s Guide • Si828x-HB-EVB Connections for Testing


2.2.1 Single PWM Input

J103 (SMA) provides connection for single PWM input to drive both Si8285 and Si8281. The onboard nonoverlapped circuit comprisesof U8 and U9 generates complimentary PWM signals to drive Si8281 and Si8285. The potentiometers R45 and R46 provide dead timeadjustment controls (both pots are set for 170 ns dead time at the factory). Below are connections for J47, J9 and J10 to support singlePWM input operation (as shown in Figure 2.1 Si828x-HB-EVB Input Power and Input Signals on page 6).• J103 (SMA): Input PWM signal• J47: pin 1 to pin 2• J9: pin 1 to pin 2• J10: pin 1 to pin 2

2.2.2 Direct PWMs Connection to Si8285 and Si8281

SMA connectors J109 and J110 provide PWM input connections to the IN+ of the Si8285 (high-side gate driver) and Si8281 (low-sidegate driver), respectively. Dual channel function generator with proper setting (dead time...) should be used to drive both gate driverssimultaneously. The J9 and J10 connections to support direct PWMs connections to J109 and J110 are listed below:• J109 (SMA): Si8285 IN+• J110 (SMA): Si8281 IN+• J9: Pin 2 to Pin 3• J10: Pin 2 to Pin 3

It is also possible to drive one gate driver directly from the function generator while keeping the second gate driver in the off state byplacing a jumper on J9 or J10 to keep the IN+ at the logical low level. The J9 and J10 jumper connections to connect the IN+ signal toGND are listed below:• J9: Pin 2 to Pin 1 (high-side SI8285 driver)• J10: Pin 2 to Pin 1 (low-side Si8281 driver)

UG484: Si828x-HB-EVB User’s Guide • Si828x-HB-EVB Connections for Testing


3. Scope Probe Connections and DESAT Configurations

Figure 3.1. Si828x-HB- EVB Scope Probe and DESAT Connections

3.1 Gate, VDS, and Low-Side Current Monitors

The Si828x-HB-EVB has the following connections to support voltage and current measurements• J107 (SMA), top-side Si8285 gate (bottom mounted, requires isolated probe)• J108 (SMA), low-side Si8281 gate (bottom mounted)• J115, high-side VDS (bottom mounted BNC, requires isolated probe)• J114, low-side VDS (bottom mounted BNC)• J111, low-side Isense; recommending T&M Research (0.005V/A) SDN-005 BNC (not included)

3.2 DESAT Monitor/Disable

The two pin headers IS202 and IS308 are used to provide scope probe connections for DESAT monitors or for DESAT disable control• IS202 top-side Si8285 DESAT: Pin 1: DESAT1, Pin 2: VMID1; DESAT1 is disabled when Pin 1 is shorted to Pin 2• IS308 low-side Si8281 DESAT: Pin 1: DESAT2, Pin 2: VMID2; DESAT2 is disabled when Pin 1 is shorted to Pin 2

UG484: Si828x-HB-EVB User’s Guide • Scope Probe Connections and DESAT Configurations


4. Test Configurations

The Si828x-HB-EVB has configurable connections to support most half-bridge performance tests for both top and bottom switchingdevices.

4.1 Double Pulse Test

The Si828x-HB-EVB can be configurated to evaluate the power switching devices in half bridge double pulse test at different currentlevels. By adjusting the switching on time and the time between the PWM pulses, the Device Under Test (DUT) can be controlled andmeasured over the full range of operating conditions. In this test, the PWM signal is injected directly to the IN+ of the first gate driverto operate its switching device while the IN+ of the second gate driver is shorted to GND to keep its switching device in the off state.The body diode of the off state switching device works in conjunction with the active switching device to provide realistic switchingcharacteristics of the half bridge circuit.

Figure 4.1. Si828x-HB- EVB Connections for Double Pulse Test

UG484: Si828x-HB-EVB User’s Guide • Test Configurations


4.1.1 Double Pulse Test on Low-Side Switching Device

Figure 4.1 Si828x-HB- EVB Connections for Double Pulse Test on page 9 provides connections for the double pulse test for thelow-side switching device.

Gate driver power:• Connect 5 V to J102.

DC-Rail input:• Connect DC-Rail voltage between J101–J106.• Connect J113 to J101 to increase the DC-Rail bypass cap from 10 µF to 20 µF.

PWM input signal:• Connect PWM input to J110 SMA connector.• JP9: Jumper between Pin 2–3 to short Si8285 IN+ to GND.• JP10: No jumper.

Inductor:

Connect inductor (air core preferred) with appropriate value from 25 µH to 75 µH between J101–J112 (keep the inductor at least twofeet away from Si828x-HB-EVB and test instrumentation to avoid interferences).

Oscilloscope connections:

Figure 4.1 Si828x-HB- EVB Connections for Double Pulse Test on page 9 shows probe scope connections for this test. Also, see3.1 Gate, VDS, and Low-Side Current Monitors for a list of scope probe connections for voltage and current measurements.

4.1.2 Double Pulse Test on High-Side Switching Device

Connections for double pulse test on high-side switching device are similar to the connections for testing the low-side switching device(as described in 4.1.1 Double Pulse Test on Low-Side Switching Device) except for the following connections:

PWM input signal:• Connect PWM input to J109 SMA connector.• JP9: No jumper.• JP10: Jumper between Pins 2–3 to short Si8281 IN+ to GND.

Inductor:Connect inductor (air core preferred) with appropriate value between J112–J106 (keep the inductor at least two feet away fromSi828x-HB-EVB and test instrumentation to avoid interference).

4.2 Cross Talk Testing

Data for the crosstalk test can be collected during the double pulse test described in 4.1 Double Pulse Test. Crosstalk data is thevoltage spike on the gate of the off-state device (J107 or J108) during switching operations. This voltage spike provides information onhow the gate driver copes with the dv/dt induced Miller current during switching operation.



4.3 DESAT Shorted Circuit Test

The Si828x-HB-EVB has connections to support DESAT shorted circuit test on either the low-side or high-side switching device. Duringtest, a PWM signal is injected directly to the IN+ of the low-side or high-side switching device (the first device) while a short connectionis placed across the D-S terminals of the second device. When a PWM signal turns on the first switching device, there is a largeshoot-through current originated from the + terminal of the DC-Rail across the first switching device and the short on the second devicetoward the negative terminal of the DC-Rail. The DESAT circuit of the gate driver must work effectively to protect the first switchingdevice from this short condition. DESAT detection response time is adjustable through the value of the R130 and R342 resistors whilesoft shutdown speed is adjustable through the value of the R211 and R346 resistors (manufactory default resistor value is 30 Ω). See"AN1288: Si828x External Enhancement Circuits" for more details.

Figure 4.2. Si828x-HB- EVB Probe Connections DESAT Shorted Circuit Test

4.3.1 DESAT Shorted Circuit Test on Low-Side Switching Device

4.3 DESAT Shorted Circuit Test provides connections for the double pulse test for the low-side switching device.

Gate driver power:• Connect 5 V to J102.

DC-Rail:• Connect DC-Rail voltage between J101–J106.• Screw bus wire between J101, J112 and J113 to increase the DC-Rail bypass cap from 10 µF to 20 µF and to place short on the

high-side switching device.

PWM input signal:• Connect PWM input to J110 SMA connector.• JP9: place jumper between Pins 2–3 to short Si8285 IN+ to GND.• JP10: no jumper.

Oscilloscope connections: 4.3 DESAT Shorted Circuit Test shows probe scope connections for this test. See 3.1 Gate, VDS, andLow-Side Current Monitors for a list of probe scope connections for voltage and current measurements.



https://www.skyworksinc.com/-/media/Skyworks/SL/documents/public/application-notes/an1288-si828x-ext-enhan-circs.pdf

4.3.2 DESAT Shorted Circuit Test on High Side Switching Device

Connections for DESAT test on high side switching device are similar to the connections for testing the low side switching device (asdescribed in 4.3.1 DESAT Shorted Circuit Test on Low-Side Switching Device) except for the following connections:

DC-Rail:• Connect DC-Rail voltage between J101–J106.• Screw bus wire between J101, J113 to increase the DC-Rail bypass cap from 10 µF to 20 µF.• Solder a wire across the D-S terminals of the low-side switching device as indicated by Item #9 of Figure 4.2 Si828x-HB- EVB Probe

Connections DESAT Shorted Circuit Test on page 11.

PWM input signal:• Connect PWM input to J109 SMA connector.• JP9: No jumper.• JP10: Jumper between Pins 2–3 to short Si8281 IN+ to GND.

4.4 Buck/Boost DCDC Testing

The Si828x-HB-EVB can be configured to operate with an external inductor in dc-dc buck or boost operation. The two bulk filtercapacitors, C118 and C119, can operate as input or output caps depending on whether a buck or boost configuration is used. The ratingof the external inductor must be properly selected to support the operating voltages, output loading, and switching frequency. Whenoperating at high output power, a heat sink with proper insulation and clip must be installed to dissipate heat from the two switchingdevices. Air flow may be required on the heat sink for very-high-power operation.

Figure 4.3. Si828x-HB-EVB Buck/Boost DC-DC Operation



4.4.1 Si828x-HB-EVB in Buck DC-DC Operation

Figure 4.3 Si828x-HB-EVB Buck/Boost DC-DC Operation on page 12 shows the connections for operating the Si828x-HB-EVB in buckmode.

Gate driver power: Connect 5 V to J102.

Inductor: Connect inductor between J112–J113.

DC-Rail input DC1: connect DC-Rail voltage between J101-J106

DC output, DC2: buck mode dc output

PWM input signal: see 2.2.1 Single PWM Input and 2.2.2 Direct PWMs Connection to Si8285 and Si8281 for two methods ofconnecting PWM signal to the Si828x-HB-EVB. Asynchronous and synchronous buck operation are possible by using proper PWMsignals combines with the jumper setting on JP9 and JP10

Oscilloscope connections: Figure 4.3 Si828x-HB-EVB Buck/Boost DC-DC Operation on page 12 shows scope probe connections forthis test. Also, see 3.1 Gate, VDS, and Low-Side Current Monitors for a list of probe scope connections for voltage and currentmeasurements.

4.4.2 Si828x-HB-EVB in Boost DC-DC Operation

The connections for the Si828x-HB-EVB to operate in boost mode operation is the same as connection for the buck mode operation(see 4.4.1 Si828x-HB-EVB in Buck DC-DC Operation). The only difference is the swapping of the dc input and dc output connection asshown below:

DC-Rail input DC2: connect DC-Rail voltage between J101–J106

DC output, DC1: boost mode dc output



5. Current Booster Option

The Si828x-HB-EVB has VH, VL, MCLP, VMID, VDDB, and VSSB test points that can be connected to an external current boosterdaughter card. The gate resistors can be removed to insert the current booster circuit between the gate driver and the SiC. Thisoption increases the current drive capability of the gate driver to more than 15 A. This circuit is optional and available on request. See"AN1288: Si828x External Enhancement Circuits" for more information on the Si828x current booster circuit.

RSS4.02

TPV?VMID

VDDB

VH

VL

M_CLMP

VSSB

GATE

Q3ZXTP2027FTA

D1

RB160MM-30TF

D21N4148W

RB4100

R1

10

R2

20

Q1ZXTN2010ZTA

Q2ZXTP2012ZTA

CP

CN

RB3 100

B

Thick Traces

RH3.0

RL3.0

VSSB

VDDB

C110uF

C20.1uF

C510uF

C60.1uF

C310uF

C40.1uF

D31N4148W

Q4ZXTP2027FTA

Figure 5.1. Current Booster Circuit

UG484: Si828x-HB-EVB User’s Guide • Current Booster Option


https://www.skyworksinc.com/-/media/Skyworks/SL/documents/public/application-notes/an1288-si828x-ext-enhan-circs.pdf

6. Bill of Materials

Table 6.1. Si828x-HB-EVB Bill Of Materials

Reference Description Manufacturer ManufacturerPart Number

C39, C41, C203, C207, C302,C304, C307, C310, C316, C319

Capacitor, 0.1 µF, 25 V, ±20%,X7R, 0603 Venkel C0603X7R250-104M

C40, C42 Capacitor, 1 nF, 100 V, ±10%,X7R, 0603 Venkel C0603X7R101-102K

C101, C103, C104, C105 Capacitor, 0.1 µF, 1000 V,±10%, X7R, 1825 AVX 1825AC104KAT1A

C111, C113 Capacitor, 270 pF, 50 V, ±10%,X7R, 0603 Kemet C0603C271K5RACTU

C112, C180 Capacitor, 10 µF, 50 V, ±20%,X7R, 1210 Venkel C1210X7R500-106M

C118, C119, C121 Capacitor, 10 µF, 1000 V, ±5%,PolyFilm, PTH Vishay MKP1848S61010JY2B

C126 Capacitor, 22 µF, 25 V, ±10%,X7R, 1210 Venkel C1210X7R250-226M

C201, C308, C315 Capacitor, 10 µF, 10 V, ±20%,X7R, 1206 Venkel C1206X7R100-106M

C202, C211, C311, C314 Capacitor, 0.1 µF, 10 V, ±10%,X7R, 0402 Venkel C0402X7R100-104K

C204, C208, C317, C320 Capacitor, 2.2 µF, 25 V, ±20%,X7R, 0805 Venkel C0805X7R250-225M

C205, C318 Capacitor, 1 nF, 100 V, ±10%,X7R, 0603 Venkel C0603X7R101-102K

C212, C321, C322 Capacitor, 10 pF, 50 V, ±0.5 pF,C0G, 0603 Venkel C0603C0G500-100D

C301, C303, C306, C309, C312 Capacitor, 10 µF, 25 V, ±20%,X7R, 1210 Venkel C1210X7R250-106M

C313 Capacitor, 470 pF, 200 V, ±20%,X7R, 0805 Venkel C0805X7R201-471M

D101, D102, D107, D108 Diode, Switch, Ultra Fast, 800V, 1.0 A, SMA Diodes Inc. US1K-13-F

D104, D110 LED, Green, 0805 Lite-On Inc. LTST-C170GKT

D105, D111 LED, Red, 631 nM, 30 mA, 2 V,54 mcd, 0805 Lite-On Tech LTST-C170KRKT

D114, D115 Diode, Fast, 100 V, 2 A,SOD123 Diodes Inc. 1N4148W

D201, D311 Diode, Schottky, 100V, 1A,SOD123 On Semi MBR1H100SF

D302, D306, D309, D310 Diode, Schottky, 80 V, 500 mA,SOD123 Diodes Inc. MBR0580S1

D303, D305 Diode, Zener, 24 V, 1000 mW,SMA Diodes Inc. SMAZ24-13-F

UG484: Si828x-HB-EVB User’s Guide • Bill of Materials



IS201, IS202, IS304, IS307,IS308

Header, 2x1, 0.1in pitch, TinPlated Samtec TSW-102-07-T-S

JP9, JP10, JP47 Header, 3x1, 0.1in pitch, TinPlated Samtec TSW-103-07-T-S

J101, J105, J106, J112, J113 CONN, Term Screw, 10-32,PTH Keystone Electronics 8174

J102 CONN, Term Block 3POS, 5.08mm, RT PCB Phoenix Contact 1729131

J103, J109, J110 CONN, SMA 50 Ω, Straight,PTH Johnson Components 142-0701-201

J107, J108 CONN SMA Jack R/A 50 ΩSMD Amphenol RF 132136-12

J114, J115 CONN, BNC, Test Lead, 4in.Leads , PTH Mueller Electric Co. BU-5200-A-4-0

L101 Inductor, 1210 TDK NLCV32T-100K-PF

PCB1 PCB, Bare Board, Si8281-HPWR-ENG REV 1.0 Skyworks SI828XTE_SIC-HV PCB

Q1, Q2 SiC, 1200 V, 115 A, 16 mΩ,TO-247 3-pin CREE C3M0016120D

Q3, Q4 SiC, 1200 V, 115 A, 16 mΩ,TO-247 4-pin CREE C3M0016120K

Q5, Q6 Transistor, PNP, –60 V, 600 mA,SOT23 NXP Semiconductors PMBT2907A

R45, R46 Trim pot, 2 kΩ, 1T, Top ADJ,SMD Murata PVG3A202C01R00

R47, R108, R114 Resistor, 10 kΩ, 1/16W, ±5%,Thick Film, 0402 Venkel CR0402-16W-103J

R101, R111 Resistor, 100 Ω, 1/10W, ±1%,Thick Film, 0805 Venkel CR0805-10W-1000F

R103, R105, R113 Resistor, 10 kΩ, 1/8 W, ±1%,Thick Film, 0805 Venkel CR0805-8W-1002F

R106, R107, R119, R120 Resistor, 2.2 kΩ, 1/10 W, ±5%,Thick Film, 0805 Venkel CR0805-10W-222J

R130, R342 Resistor, 2.2 kΩ, 1/10 W, ±1%,Thick Film, 0603 Yageo RC0603FR-072K2L

R201, R311, R321 Resistor, 0.1 Ω, 1/2 W, ±1%,Thick Film, 1210 Venkel LCR1210-R100F

R202 Resistor, 4.7 kΩ, 1/10 W, ±1%,Thick Film, 0603 Venkel CR0603-10W-4701F

R203, R323 Resistor, 4.02 Ω, 1/4 W, ±1%,Thick Film, 1206 Venkel CR1206-4W-4R02F

R204, R324 Resistor, 1.0 Ω, 1/4 W, ±1%,Thick Film, 1206 Venkel CR1206-4W-1R00F

R205 Resistor, 0 Ω, 2 A, Thick Film,0805 Venkel CR0805-10W-000




R207, R208, R327, R328 Resistor, 100 Ω, 1/10 W, ±1%,Thick Film, 0603 Venkel CR0603-10W-1000F

R210, R345 Resistor, 100 Ω, 1/16 W, ±1%,Thick Film, 0603 Venkel CR0603-16W-1000F

R211, R346 Resistor, 30 Ω, 1/8 W, ±1%,Thick Film, 0805 Yageo RC0805FR-0730RL

R301, R306, R313, R330,R331, R332

Resistor, 1.0 kΩ, 1/4 W, ±5%,Thick Film, 1206 Venkel CR1206-4W-1R0J

R317 Resistor, 8.66 kΩ, 1/16 W, ±1%,Thick Film, 0603 Venkel CR0603-16W-8661F

R319 Resistor, 150 kΩ, 1/10 W, ±1%,Thick Film, 0603 Panasonic ERJ-3EKF1503V

R320 Resistor, 200 kΩ, 1/10 W, ±1%,Thick Film, 0805 Venkel CR0805-10W-2003F

R325 Resistor, 10.0 Ω, 2 W, ±1%,Thick Film, 2512 Venkel CR2512-2W-10R0FT-W

R333, R334, R337, R338,R343, R344

Resistor, 0 Ω, 4 A, Thick Film,1210 Venkel CR1210-4W-000

R335, R336 Resistor, 10 kΩ, 1/16 W, ±1%,Thick Film, 0603 Venkel CR0603-16W-1002F


R406, R407, R408, R409,R410, R411, R412, R413

Resistor, 1 MΩ, 1/8 W, ±1%,Thick Film, 1206 Venkel CR1206-8W-1004F

R424 Resistor, 249 kΩ, 1/4 W, ±0.1%,ThinFilm, 1206 Panasonic ERA-8AEB2493V

S101 Switch, PB, NO, Momentary, 6mm, PTH Panasonic EVQ-PAD04M

TP101, TP102, TP106, TP107,TP108, TP109, TP111, TP112,TP121, TP201, TP202, TP203,TP204, TP205, TP206, TP301,TP302, TP303, TP304, TP305,TP306, TP307, TP308, TP309,TP310, TP311, TP312, TP313,

TP314

Testpoint, White, PTH Kobiconn 151-201-RC

TP104, TP105, TP113, TP116,TP117, TP118 Testpoint, Black, PTH Kobiconn 151-203-RC

TP114, TP115, TP119, TP120 Testpoint, Blue, PTH Kobiconn 151-205-RC

T1 Transformer, 1.5 µH, 10%,3750VAC ISOL. UMEC UTB02286S

U4 Heatsink, TO-247, Aluminum Ohmite C40-058-VE

U8 IC, NAND, Quad, 2 Input, SO14 TI SN74HC00DR

U9 IC, Inverter, Hex, SO14 TI CD74AC04M

U201 IC, 4 Amp Isodriver, 12 V UV-LO, 5 kV, SOW16 Skyworks Si8285CD-A-IS




U301 IC, 4 A Isodriver with Isovolt,SO20 WB Skyworks Si8281CD-IS

J114, J115 CONN, BNC, Test Lead, 4 in.Leads , PTH Mueller Electric Co. BU-5200-A-4-0

Not Installed Components

J111 CONN, Jack BNC VERT 10 mΩcurrent sense T&M Research SDN-414-01

C102, C210 Capacitor, 10000 pF, 1000 V,±10%, X7R, 1825 AVX 1825AC103KAT1A

C115 Capacitor, 0.1 µF, 25 V, ±10%,X7R, 0603 Venkel C0603X7R250-104K

C116 Capacitor, 2200 pF, 50 V, ±10%,X7R, 0402 Venkel C0402X7R500-222K

C122, C124 Capacitor, 22 nF, 25 V, ±5%,C0G, 0805 Venkel C0805C0G250-223J

C123, C127 Capacitor, 4.7 µF, 16 V, ±10%,X5R, 0805 Venkel C0805X5R160-475K

C125 Capacitor, 1 µF, 50 V, ±1%,C0G, 0805 Venkel C0805C0G500-105F

C209 Capacitor, 10 pF, 50 V, ±0.5 pF,C0G, 0603 Venkel C0603C0G500-100D

C216 Capacitor, 0.047 µF, 100V,±10%, X7R, 0805 Venkel C0805X7R101-473K

D113 Diode, Schottky, 40 V, 1.0 A,SOD123 ST Semiconductor STPS140Z

R115 Resistor, 22 kΩ, 1/8 W, ±1%,Thick Film, 0805 TE Connec. CRGCQ0805F22K


R118 Resistor, 1K, 1/8W, ±1%, ThickFilm, 0805 Venkel CR0805-8W-1001F

R124 Resistor, 3.16 kΩ, 1/8 W,±0.1%, ThinFilm, 0805 Panasonic ERA-6AEB3161V

R125 Resistor, 249 kΩ, 1/10 W, ±1%,Thick Film, 0603 Panasonic ERJ-3EKF2493V

R126 Resistor, 221 kΩ, ¼ W, ±1%,Thick Film, 1206 Yageo RC1206FR-07221KL


R128 Resistor, 499 Ω, 1/4W, ±1%,ThinFilm, 0805 Stackpole Elec. RNCP0805FTD499R


R403 Trim pot, 2 K, 1T, Top ADJ,SMD Murata PVG3A202C01R00




R404 Resistor, 330K, 1/8W, ±1%,Thick Film, 0805 TE Connec. CRGCQ0805F330K

R405 Resistor, 1M, 1/8W, ±1%, ThickFilm, 1206 Venkel CR1206-8W-1004F

TP111, TP122, TP123, TP124 Testpoint, White, PTH Kobiconn 151-201-RC

TP113 Testpoint, Black, PTH Kobiconn 151-203-RC

U106 Voltage Mode Controller, 8-PinSOIC TI TPS40200

U107 LT4430, Opto-Coupler Driver,3V-20V Linear T/AD LT4430ES6#TRMPBF

U108 Photocoupler, 4-Pin Ultra Small CEL PS2911-1

Table 6.2. Si828x Current Booster Circuit Bill of Materials


C1, C3, C5 Capacitor, 10 µF, 50 V, ±20%,X7R, 1210 Venkel C1210X7R500-106M

C2, C4, C6 Capacitor, 0.1 µF, 50 V, ±10%,X7R, 0603 Yageo CC0603KPX7R9BB104

D1 Diode, Schottky, 30 V, 1 A,SOD123 Rohm RB160MM-30TF

D2, D3 Diode, Fast, 100 V, 2 A,SOD123 Diodes Inc. 1N4148W

Q1 Transistor, NPN, 60 V, 5 A, LOSAT, SOT89 Diodes Inc. ZXTN2010Z

Q2 Transistor, PNP, –60 V, –4.3A,SOT89 Zetex ZXTP2012Z

Q3, Q4 Transistor, PNP, –60 V, –4 A,SOT23 Diodes Inc. ZXTP2027FTA

RB3, RB4 Resistor, 100 Ω, 1/10 W, ±1%,Thick Film, 0805 Venkel CR0805-10W-1000F

RL,RH Resistor, 3.0 Ω, 1 W, ±1%,Thick Film, 2010 Vishay CRCW20103R00FKEFHP

RSS Resistor, 4.02 Ω, 1/4 W, ±1%,ThickFilm, 1206 Venkel CR1206-4W-4R02F

R1 Resistor, 10 Ω, 1/4 W, ±1%,Thick Film, 1206 Venkel CR1206-4W-10R0F

R2 Resistor, 20 Ω, 1/4 W, ±1%,Thick Film, 1206 Venkel CR1206-4W-20R0FT



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