Ultra-Wide-Band (UWB) Band-Pass-Filter Using Integrated Passive Device (IPD) Technology for Wireless Applications

J 17 2009June 17, 2009

STATS ChipPAC D&CYongTaek Lee

STATS ChipPAC D&CYongTaek Lee

Rev01 Rev01

Agenda

• Introduction

• Design and characterization for flip-chip IPD

D ig d h t i ti f Wi b di g IPD• Design and characterization for Wire bonding IPD

• The simple triple wire-bond and philips/TU Delgt tripe i b d i d t d lwire-bond inductance model

• Conclusions

22

Introduction

• Most common applications of Integrated passives devices (IPDs) are in the front-end of wireless systems, between the antenna and t i transceiver.

• Integrated passives devices (IPDs) based on semiconductor processes offer the advantage of excellent parameter control and processes offer the advantage of excellent parameter control, and allow simplified and compact module design.

• IPD processes can be used to make high density capacitors, high Q p g y p , g Qinductors and large value resistors.

• The Ultra Wide Band (UWB) band-pass-filter developed in this paper h th ll t i hil hi i i l t l t i l has the smallest size while achieving equivalent electrical performance.

• In this paper an UWB Band-pass-filter is made using lumped • In this paper, an UWB Band pass filter is made using lumped integrated passive devise technology on a silicon substrate for wireless applications.

33

The technology of UWB

• UWB offers great potentials for home networking, wireless sensors, and location aware system.

• UWB Characteristics and signal.

Low power BW = (fH - fL)/fc = 2(fH - fL)/(fH + fL) High data rate Narrowband BW < 1%

Wideband 1% < BW < 20%Ultra-Wide-Band BW > 20%

C i b d t (30KH )Trans

2G 2G 4GCellular(Mobile)WLAN

Carrier based system (30KHz)

Wireless LAN (5MHz)

smission P

ZigBee Bludtooth

802.15.3

ADSL VDSL

WLAN

Wireline

UWB(a few GHz)

Frequency

Power

0.01 0.1 1 10 50 100 400 1000

USB1.1 USB2.0WirelinePAN

44

FrequencyData Rate (Mbps)

Integrated Passive Device Process Description

• In the STATS ChipPAC’s silicon process, a specially treated silicon substrate is used to grow dielectric layer and metal layer. g y y

• Capacitors: < 100pF, inductors: 20nH (Q 25-45), Resistors: < 100K Ohm.

Component Componentsurface

Component surface

WIRE-BOND FLIP-CHIP

Figure1: Thin film Integrated Passive Device (IPD) structure ( not in scale)

Inductor CapacitorResistor

55

structure ( not in scale).

RF Product Design Examples

• GSM LPF, Balun.

• DCS LPF Balun• DCS LPF, Balun.

• 11b/g BPF, Balun.

• 11a BPF Balun• 11a BPF, Balun.

• WiMax BPF, Balun.

• Diplexers: GSM/DCS 11b/a WiMax• Diplexers: GSM/DCS, 11b/a, WiMax.

• Compact designs: Balanced filter, Balanced diplexers.p

• RF Modules (CSMP) and RF SiP.

66

IPD on wafer being probedIPD on substrate

IPD RF Applications (side by side with a die)

IPD product IPD product databook available from the website.

77

IMS2008, Atlanta

UWB Band-Pass-Filter for Flip-Chip IPD

• Figure 2 shows a circuit topology for the band-pass filter.

• Flip-chip IPD layout of the UWB band-pass-filter for EM simulation .Flip chip IPD layout of the UWB band pass filter for EM simulation .Two bumps are for UWB band-pass-filter input and output.

Four bumps are just for electrical ground.

The UWB band-pass-filter of flip-chip die has a size of 1.4mm x 1.2mm x 0.40mm (including bump height).

PORT06

C05C08

PORT03

C04

PORT06

PORT05

C02L01 C07C01

PORT02

PORT03

C03

L02

C06

L03

C03 C06

PORT01 PORT04

Figure 2: Circuit topology for UWB band- Figure 3: Flip-chip IPD layout of the

88

pass-filter (BPF). UWB band-pass-filter for EM simulation.

UWB Band-Pass-Filter for Flip-Chip IPD

• To meet electrical performance and size target a general design methodology (Figure 4) was followed.gy ( g )

Step: 1) Create circuit model for IPDStep: 2) Generate physical layout to fit available space, and perform EM simulationStep: 3) Optimize as required to meet Step: 3) Optimize as required to meet specifications.

Figure 4: Design methodology of integrated passives.

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UWB Band-Pass-Filter for Flip-Chip IPD

• The simulated characteristics of the UWB band-pass-filter are shown in Figure 5.g

• The insertion loss from 7GHz to 9GHz is 1.8dB and the return loss is greater than 15dB in EM-simulation.

B)

1dB

) 0.0et

urn

loss

(S11

dBns

ertio

n lo

ss(S

2

-40.0

-20.0

Pass

band

rePa

ssba

nd in

-80.0

-60.0Passband retrun loss S11

Passband insertion loss S21

Frequency (GHz)

0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0-100.0

Figure 5: S11 and S21 parameters for the UWB band-pass-filter in simulation.

1010

g 11 21 p p

Fabrication

• Passive integration on silicon substrate.

• Low insertion loss in pass band• Low insertion loss in pass band.• Eutectic Sn/Pb or lead-free solder

bump.• Low profile, 0.40mm height.• Directly flipped on PCB.

Operating temperature: 40 to • Operating temperature: -40 to +85°C.

• Storage temperature: -40 to +85°C.

Figure 6: UWB band-pass-filter flip-chip die.

1111

Wafer Level Test

• Membrane probes for non-destructive wafer-level test.

• PCM for line width, leakage current, capacitance, inductor Q, etc.Ensure yield before wafers/dies shipped out

RF Wafer Membrane Probe

• Ensure yield before wafers/dies shipped out.

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Characterization on Laminate Board• S-Parameters were measured with wire bonding IPD die through

probing on the G-S-G patterns on the test board.Verify the response in package.Temperature controller used for IPD temp characterization.

IPD FlippedProbe Station

G-S-G patterns on the test boardTemperature Controller

1313

UWB Band-Pass-Filter Results for Flip-Chip IPD

• Typical characteristics of the manufactured UWB band-pass-filter are shown in Figure 7.g

• The insertion loss is 1.7dB (minimum) and return loss is 15dB.• The manufactured UWB band-pass-filter has low pass-band insertion

loss and small si eloss and small size.

B) 0.0

B)

0.0

on L

oss

(dB

-40.0

-20.0

Insertion Loss n Lo

ss (d

B

-15.0

-10.0

-5.0Return Loss

Inse

rtio

-80.0

-60.0

Ret

urn

-30.0

-25.0

-20.0

Frequency (GHZ)0.0 5.0 10.0 15.0 20.0

-100.0

Frequency (GHz)0.0 5.0 10.0 15.0 20.0

-35.0

Figure 7: Typical characteristics of the manufactured UWB band-pass-filter.

1414

g y

UWB Band-Pass-Filter Results for Flip-Chip IPD

• Typical characteristics for the filp-chip UWB band-pass filter.

• In high frequency applications our simulation scheme is very • In high frequency applications, our simulation scheme is very suitable for designing IPD products.

Specification Units Min Typ Max Design Measurement

Table 1: Typical characteristics for the flip-chip UWB band-pass filter.

Passband frequency MHz 7000 9000

Passband insertion loss dB 2.0 1.8 2.0

P b d t l dB 10 15 15Passband return loss dB 10 15 15

Attenuation, 824-915 MHz dB 55 55 50

Attenuation, 1710-1910 MHz dB 35 60 53

Attenuation, 2400-2500 MHz dB 30 55 55

Attenuation, 4900-5900 MHz dB 15 16 18

Attenuation , 12000-15000 MHz dB 15 30 20

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UWB Band-Pass-Filter for Wire Bonding IPD• The circuit design and fabrication of the wire-bond UWB band-pass-

filter IPD are similar to those described above for the flip-chip device. device.

• The device can be mounted directly on a PCB or laminate substrate using conventional wire-bonding techniques.

• The UWB band-pass-filter of wire-bonding die has a size of 1.2mm x 1.0mm x 0.25mm.

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Figure 8: Wire bonding IPD layout of the UWB band-pass -filter for EM simulation.

UWB Band-Pass-Filter for Wire Bonding IPD

• The circuit-level simulation was done using a simple inductance model (0 35nH) for each of the triple wire bonds model (0.35nH) for each of the triple wire-bonds.

S 11 d

B)

ss (S

21dB

)

-20.0

0.0 Table 2: Typical characteristics for the UWB band-pass filter.

Specification Units Min Typ Max Design

nd re

turn

loss

(nd

inse

rtio

n lo

s

-60.0

-40.0

Passband return lossPassband insertion loss

Passband frequency MHz 7000 9000

Passband insertion loss dB 2 1.6

Passband return loss dB 10 15

Attenuation 824 915 MHz dB 55 50

Pass

ban

Pass

ban

-120.0

-100.0

-80.0 Attenuation, 824-915 MHz dB 55 50

Attenuation, 1710-1910 MHz dB 35 53

Attenuation, 2400-2500 MHz dB 30 55

Attenuation, 4900-5900 MHz dB 15 18

Frequency (GHz)

0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0

Figure 9: S11 and S21 parameter for UWB band-pass-filter in simulation.

,

Attenuation , 12000-15000 MHz

dB 15 20

1717

p

Fabrication

• The device can be mounted directly on a PCB or laminate substrate using conventional wire-bonding techniques.g g q

• RF test board layout shows an UWB band-pass-filter with 3 with bonds to input pad (#3) and output pad (#6).The four ground pads (#1 #2 #4 #5) are also connected with triple • The four ground pads (#1, #2, #4, #5) are also connected with triple wire bonds pads.

G S G patterns on the test boardG-S-G patterns on the test board

Figure 10: UWB band pass filter wire bond die and RF test board layout

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Figure 10: UWB band-pass-filter wire-bond die and RF test board layout.

UWB Band-Pass-Filter for Wire Bonding IPD

• The characteristics of the UWB band-pass-filter of wire bonding die are shown in Figure 11.g

The insertion loss is 2.4dB (Minimum) and the return loss is 7dB.

• Compared to the results for the flip chip UWB filter, these results

) 0.0

B)

0

are much worse than expected.

n Lo

ss (d

B)

-10.0

-5.0Return Loss

on L

oss

(dB

40

-20

0

Ret

urn

-20.0

-15.0

Inse

rtio

80

-60

-40 Insertion Loss

Frequency (GHz)0.0 5.0 10.0 15.0 20.0

-25.0

Frequency (GHz)0.0 5.0 10.0 15.0 20.0

-80

Figure 11: Measured characteristics of the UWB band-pass-filter of wire bonding die.

1919

g p g

Tripe wire-bond inductance model

• Figure 12 shows a comparison of the simulated result versus measurement using the simple triple wire bond inductance model.g p p

• The simple model does not account for mutual interactions between the wire bonds, which become more important at higher f i

(S11

,S21

dB

)S 2

1 dB

)

-20.0

0.0

frequencies.

It can be seen that the agreement between the two is poor. Because

e W

B m

odel

dat

a (

rem

ent d

ata

(S11

,

-80.0

-60.0

-40.0

Simple WB model dataMeasurement data

between the two is poor. Because of the good agreement in the flip-chip case, it was suspected the cause of the discrepancy was in th i l i d t d l d

0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0Si

mpl

eM

easu

-120.0

-100.0

the simple inductance model used for the wire bonds.

Frequency (GHz)

Figure 12: Measurement versus simulation using the simple triple wire-bond inductance models for wire-bonding IPD.

2020

models for wire bonding IPD.

Wire-bond shape model

BONDW_ShapeShape1

Top figure applies

Shape1

StartH=250 umGap=700 umRw=12.5 um

Stretch=100 umTilt=50 umMaxH=350 umStartH 250 um

FlipX=1StopH=0 um

• StartH is 250um (top of IPD)• StopH is 0 (plane of the test board)• Gap is 700um (total length of the wire bond in the x y plane)• Gap is 700um (total length of the wire bond in the x-y plane)• MaxH is 350um (a 100um loop height – typical.) • Tilt and stretch are chosen to give the wire bond a reasonable h

2121

shape.

Simulation setup

• This is the same as the simple model, but the wire-bond inductors have been replaced by the ADS WIRESET modelhave been replaced by the ADS WIRESET model.

Wires labeled 1-18 t l k i

pad_2

pad_1 S_ParamSP1

Step=5 MHzStop=15 GHzStart=0.01 GHz

S-PARAMETERSBONDW_ShapeShape1

Stretch=100 umTilt=50 umMaxH=350 umStartH=250 umGap=700 umRw=12.5 um

1

2

3

4

5

6

7Term

counter-clockwise

1 18Wires labeled 1-18

pad_2pad_1

pad_3

pad_4pad_5

pad_6

pad_5

pad_4

pad_3

S6PSNP1Fil "UWB 8GHZ 3WB FINAL it 1 1 6 "

1 5

4

6

3 Ref2

FlipX=1StopH=0 umStretch=100 um

8

9

10

11

12

13

14

15T

Term1

Z=50 OhmNum=1 counter-clockwise

pad_6

File="UWB_8GHZ_3WB_FINAL_runit_1_1.s6p"

BONDW18WIRESET1

W18_Xoffset=465 umW18_Shape="Shape1"W17_Angle=0W17_Zoffset=0 um

W15_Xoffset=465 umW15_Shape="Shape1"W14_Angle=0W14_Zoffset=0 um

W12_Xoffset=465 umW12_Shape="Shape1"W11_Angle=90W11_Zoffset=0 um

W9_Xoffset=-285 umW9_Shape="Shape1"W8_Angle=90W8_Zoffset=0 um

W6_Xoffset=-465 umW6_Shape="Shape1"W5_Angle=180W5_Zoffset=0 um

W3_Xoffset=-465 umW3_Shape="Shape1"W2_Angle=180W2_Zoffset=0 um

Layer="cond"View=sideCond=1.3e7 SRadw=12.5 um

16

17

18

TermTerm2

Z=50 OhmNum=2

W18_Angle=0W18_Zoffset=0 umW18_Yoffset=-365 um

W17_Xoffset=465 umW17_Shape="Shape1"W16_Angle=0W16_Zoffset=0 umW16_Yoffset=-185 umW16_Xoffset=465 umW16_Shape="Shape1"W15_Angle=0W15_Zoffset=0 umW15_Yoffset=0 um

W14_Xoffset=465 umW14_Shape="Shape1"W13_Angle=0W13_Zoffset=0 umW13_Yoffset=180 umW13_Xoffset=465 umW13_Shape="Shape1"W12_Angle=90W12_Zoffset=0 umW12_Yoffset=365 um

W11_Xoffset=375 umW11_Shape="Shape1"W10_Angle=0W10_Zoffset=90 umW10_Yoffset=365 umW10_Xoffset=285 umW10_Shape="Shape1"W9_Angle=90W9_Zoffset=0 umW9_Yoffset=365 um

W8_Xoffset=-375 umW8_Shape="Shape1"W7_Angle=90W7_Zoffset=0 umW7_Yoffset=365 umW7_Xoffset=-465 umW7_Shape="Shape1"W6_Angle=180W6_Zoffset=0 umW6_Yoffset=180 um

W5_Xoffset=-465 umW5_Shape="Shape1"W4_Angle=180W4_Zoffset=0 umW4_Yoffset=0 umW4_Xoffset=-465 umW4_Shape="Shape1"W3_Angle=180W3_Zoffset=0 umW3_Yoffset=-185 um

W2_Xoffset=-465 umW2_Shape="Shape1"W1_Angle=180W1_Zoffset=0 umW1_Yoffset=-365 umW1_Xoffset=-465 umW1_Shape="Shape1"Zoffset=0 umSepY=0 umSepX=0 um

2222

W17_Yoffset=-275 umW14_Yoffset=90 umW11_Yoffset=365 umW8_Yoffset=365 umW5_Yoffset=90 umW2_Yoffset=-275 um

Tripe wire-bond inductance model• An improved circuit-level simulation was done using the Philips /TU

Delft wire-bond models in ADS.• These account for a more detailed shape of the wire bond and also

account for mutual inductances between all of the wires.• The comparison between the IPD characteristics using the simple The comparison between the IPD characteristics using the simple

triple wire bond model and the more accurate Philips/TU Delft model is shown in Figure 13.

data

(S11

, S21

dB

)a

(S11

, S21

dB

)

-40

-20

0

mpl

e W

B m

odel

dS

WB

mod

el d

ata

-80

-60

Simple WB model dataADS WB model data

Frequency (GHz)

0 2 4 6 8 10 12 14

Sim

AD

S-120

-100

Figure 13: Simulation using the simple triple wire-bond inductance model versus simulation using the Philips/TU Delft triple wire bond

2323

Philips/TU Delft triple wire bond inductance models.

Tripe wire-bond inductance model

• Figure 14 shows a comparison of the measured data versus simulation using the Philips TU/Delft wire-bond inductance model for wire-bond IPD. With the more accurate wire-bond models, the agreement is much better.

• At these high frequencies, the simple wire-bond models are not sufficiently accurate.

dB)

1 dB

) 0

sufficiently accurate.

nt d

ata

( S11

, S21

de

l dat

a (S

11, S

2

-60

-40

-20

Mea

sure

men

AD

S W

B m

od

-100

-80Measurement dataADS WB model data

Frequency (GHz)

0 2 4 6 8 10 12 14-120

Figure 14: Measurement versus simulation i th Phili /TU D lft t i l i b d

2424

using the Philips/TU Delft triple wire-bond inductance models.

Conclusions

• The design and implementation of a silicon based band-pass-filter for Ultra Wide Band applications have been presented.pp p

• Excellent filter properties are obtained from the UWB band-pass-filter of flip-chip die.

• For wire bondable IPDs working at high frequencies (such as this UWB filter), simple inductance model for multiple wires is not good enough for designs.enough for designs.

• More advanced coupled-wire models in ADS have shown better predictions of the wire behaviors.

• The IPD technology is especially well suited for UWB applications because of its excellent parameter control and enabling smaller from factorsfrom-factors.

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