UNIT II RF TRANSISTOR AMPLIFIER DESIGN AND MATCHING NETWORKS

PART – A1. Draw the generic amplifier system.2. What are the key amplifier parameters?3. Define Transducer Power Gain.4. State Maximum power transfer theorem.5. What is matching network?6. Mention the different functions of matching network.7. Draw the different types of two component network or L section networks.8. Define forbidden region.9. Draw the forbidden regions for the different L – section matching network for the source

impedance of 50 ohms.10. Mention the different noise parameters in transistors.11. Write the expression for unilateral figure of merit.12. Write the expression for the stability factor of an amplifier.13. What is the relation between nodal quality factor and loaded quality factor?14. Draw the two topologies of single stub matching networks.15. What is the main drawback of single stub matching network?16. Draw the general topology of a T type matching network.17. What is the need for matching network18. Write the expression for the length of open and short circuit stub.19. Define loaded Q20. Draw an Pi matching network configuration.21. Define stability.22. Draw thwe block diagram of a single stage amplifier circuit.23. What do you mean by conditional stability.24. What do you mean by unconditional stability25. Give the condition for unilateral transistor.26. Define output stability circle.27. Define input stability circle.28. Define single parameter test.29. Draw the general block diagram of a transistor amplifier in microwave.30. Define operating power gain31. Define available power gain.32. Define constant gain circles.33. Define noise figure circles.34. Define unilateral figure of merit.35. Give some types of random processes used to calculate noise power.36. Define electrical noise.37. Define thermal noise.38. Define shot noise.39. Define flicker noise40. Draw the diagram of noisy resistor.41. What do you mean by equivalent noise temperature.42. Define noise figure.43. A wideband amplifier(2-4 GHz) has a gain of 10 dB,an output power of 10 dBm and a

noise figure of 4 dB at room temperature.Find the output noise power in dBm.44. Define noise measure.45. What are the approaches we have to design a matching network?46. Define quality factor.47. What do you mean by nodal quality factor.48. What do you mean by microstripline matching network.49. Define conduction angle.50. Mention the classes of operation.

PART – B

1. Derive the amplifier power relations.

KEY PARAMETERS

2. The output impedance of a transmitter operating at a frequency of 2 GHz is ZT = (150 +j75) ohms. Design an L – section matching network such that maximum power is delivered to antenna whose input impedance is ZA = ( 75 +j15 ) ohms.

3.Write the general procedure for designing an L – section matching network using smith chart.

4.Using smith chart, design all possible configurations of discrete two element matching network that matches the source impedance ZS = (50 +j25 ) ohms to the load ZL = ( 25 - j 50 ) ohms. Assume Z0 = 50 ohms and the operating frequency of

f = 2 GHz.

5. Derive the expression for the stability factor of an amplifier.

6. What is the need for matching networks? Explain in detail about single stub matching.

7. \With an example explain about the double stub matching network.

8.

9. Design a Pi matching network that transforms a load impedance of ZL = (10 – j10) ohms into an input impedance of Zin = ( 20 + j 40 ) ohms. Assume f = 2.4 GHz.

10. For a load impedance of ZL = ( 60 – j45 ) ohms, design two single stub matching networks that transform the load to a Zin = ( 75 + j90 ) ohms input impedance.

Assume Z0 = 75 ohms