universal i-line/crossover photoresist series · 0.54 na, 0.6 σ// peb: 110°c, 90 sec, proximity...

P r o d u c t D a t a S h e e t

AZ® ECI 3000 Photoresist

Universal i-Line/CrossoverPhotoresist Series

GENERAL INFORMATIONAZ ECI 3000 photoresist series are a family of fast positive resists with high resolution capabilities

(0.4 µm CDs in production in i-line) enabling wide process latitudes. The resist family is suited for i-line

as well as broadband exposure covering g-, h- and i-line illumination wavelengths. It is designed to have

superior implant and dry etch resistance. Further characterization highlights show strong wet etch

adhesion and good thermal stability. AZ ECI 3000 photoresist series are specifically tailored for

universal application and excellent cost of ownership.

RECOMMENDED PROCESSSoftbake: 90°C, 60 sec (contact) - 90 sec (proximity)

Exposure: i- & g-line stepper or broadband exposure

Post Exposure Bake (PEB): 110°C, 60 sec (contact) - 90 sec (proximity)

Development: 60 sec, puddle, AZ 300 MIF Developer (non surfactated) or

AZ 926 MIF Developer (surfactated)

SUITABLE ANCILLARIESAZ Aquatar top anti-reflective coating

AZ BARLi II bottom anti-reflective coating

AZ EBR 70/30 edge bead remover

AZ 400T stripper

VISCOSITIESAZ ECI 3007 ~ 0.6 - 1.3 µm FT

AZ ECI 3012 ~ 1.1 - 2.4 µm FT

AZ ECI 3027 ~ 2.2 – 5 µm FT

AZ® ECI 3007 PHOTORESIST

SPIN CURVESoftbake: 90°C, 60 sec, proximityWafer size: 6” (150 mm)dynamic dispense

FILM THICKNESS 2000 rpm 3000 rpm 4000 rpm 5000 rpm0.99 µm 0.81 µm 0.70 µm 0.63 µm

i-LINE THIN FILM INTERFERENCE(on bare silicon)

Softbake: 90°C, 60 sec, proximityExposure: Nikon NSR-1755i7B

i-line stepper0.54 NA, 0.6 σ

PEB: 110°C, 60 sec, proximityDevelopment: 60 sec, puddle, 23°C

AZ 726 MIFDeveloper

0,6

0,8

1

1,2

1 2 3 4 5

Spin Speed / krpm

Film

Thi

ckne

ss /

µm

40

45

50

55

60

65

70

75

0,6 0,7 0,8 0,9 1,0 1,1 1,2

Film Thickness / µm

Dos

e-to

-Cle

ar /

mJ/

cm²




STD DEV 1.2 nm 0.8 nm 0.5 nm 1.1 nm





AZ 300 MIFDeveloper

1

1,5

2

2,5

1 2 3 4 5

Spin Speed / krpm

Film

Thi

ckne

ss /

µm

35

40

45

50

55

60

65

70

75

1,1 1,2 1,3 1,4 1,5 1,6 1,7


Dos

e-to

-Cle

ar /

mJ/

cm²







AZ 726 MIFDeveloper

2

3

4

5

1 2 3 4 5

Spin Speed / krpm

Film

Thi

ckne

ss /

µm

100

110

120

130

140

150

2,1 2,2 2,3 2,4 2,5 2,6 2,7


Dos

e-to

-Cle

ar /

mJ/

cm²


AZ® ECI 3007 PHOTORESIST PROCESS on bare silicon substrateSoftbake: 90°C, 90 sec, proximity // 0.763 µm film thickness Emax // Exposure: Nikon NSR-1755i7Bi-line stepper, 0.54 NA, 0.6 σ // PEB: 110°C, 90 sec, proximity // Development: 60 sec, puddle, AZ 300 MIF Developer @ 23°C // CD 0.5µm dense C/H process window summary at best point: 140 mJ/cm², 1.37 µm DOF, 29.1% exposure latitude

FOCUS LATITUDE 0.5 µm dense contact holes

-0.4 µm -0.2 µm 0 µm 0.2 µm 0.4 µm 0.6 µm 0.8 µm 1.0 µm 1.2 µm

135m

J/cm

²14

0mJ/

cm²

145m

J/cm

²

LINEARITY(dense lines on bare silicon)

Softbake: 90°C, 90 sec, proximityFilm Thickness: 1.2 µm, EmaxExposure: Nikon NSR-1755i7B



AZ 300 MIFDeveloper

Measurement: Hitachi S-8840 CD SEM

PROCESS on bare silicon substrateSoftbake: 90°C, 90 sec, proximity // 1.2 µm film thickness // Exposure: Nikon NSR-1755i7B i-line stepper, 0.54 NA, 0.6 σ // PEB: 110°C, 90 sec, proximity // Development: 60 sec, puddle, AZ 300 MIF Developer @ 23°C

LINEARITY dense lines, 110 mJ/cm²

FOCUS LATITUDE 0.4 µm dense lines, 110 mJ/cm²

LINEARITY dense contact holes, 136 mJ/cm²

FOCUS LATITUDE 0.6 µm dense contact holes, 136 mJ/cm²

0.7 µm 0.45 µm 0.4 µm 0.38 µm 0.36 µm 0.34 µm

-0.8 µm -0.6 µm -0.4 µm 0 µm 0.2 µm 0.4 µm

0.7 µm 0.65 µm 0.6 µm 0.55 µm 0.5 µm 0.45 µm

-0.8 µm -0.4 µm 0 µm 0.4 µm 0.6 µm 0.8 µm

0,30

0,35

0,40

0,45

0,50

0,55

0,60

0,30 0,35 0,40 0,45 0,50 0,55 0,60

CD nominal / µmC

D m

easu

red

/ µm

110 mJ/cm²CD nom.CD + 10 %CD - 10 %



Softbake: 100°C, 60 sec, proximityFilm Thickness: 2.5 µmExposure: Nikon NSR-1755i7B



AZ 726 MIFDeveloper

Measurement: Hitachi S-8840 CD SEM

PROCESS on bare silicon substrateSoftbake: 100°C, 60 sec, proximity // 2.5 µm film thickness // Exposure: Nikon NSR-1755i7B i-line stepper, 0.54 NA, 0.6 σ // PEB: 120°C, 60 sec, proximity // Development: 60 sec, puddle, AZ 726 MIF Developer @ 23°C // CD 1.3µm dense lines process window summary at best point: 270 mJ/cm², 1.3 µm DOF, 32.4% exposure latitude

LINEARITY dense lines, 262.5 mJ/cm²

FOCUS LATITUDE 1.3 µm dense lines, 262.5 mJ/cm²

0.90 µm 0.80 µm 0.75 µm 0.70 µm 0.65 µm 0.60 µm

-0.9 µm -0.6 µm -0.3 µm 0.3 µm 0.9 µm 1.2 µm


0,60

1,00

1,40

1,80

2,20

2,60

3,00

0,60 1,00 1,40 1,80 2,20 2,60 3,00

CD nominal / µm

CD

mea

sure

d / µ

m

262.5 mJ/cm²CD nom.CD + 10 %CD - 10 %

1.0 µm 1.20 µm 1.4 µm 2.0 µm 3.0 µm 5.0 µm

THERMAL STABILITY 100 µm edge, 1.2 µm film thickness, contact hardbake 60 sec at temperatureSoftbake: 90°C, 90 sec, proximity // Exposure: Nikon NSR-1755i7B i-line stepper, 0.54 NA, 0.6 σ // PEB: 110°C, 90 sec, proximity // Development: 60 sec, puddle, AZ 300 MIF Developer @ 23°C

no bake 105°C 110°C 115°C 120°C 125°C

BROADBAND EXPOSURE LATITUDE 3 µm lines, 1.2 µm film thicknessSoftbake: 90°C, 60 sec, contact // Exposure: Perkin Elmer 340 Series Projection Mask Aligner, Aperture: 1, Slit Width: 1 mm // PEB: 110°C, 60 sec contact // Development: 60 sec, puddle, AZ 300 MIF Developer @ 23°C

scan setting 300 scan setting 400 scan setting 500

scan setting 600 scan setting 700 scan setting 800

DOF / EXPOSURE LATITUDE3 µm lines

(Perkin Elmer 340 Series)

Substrate: SiliconSoftbake: 90°C, 60 sec, contactFilm Thickness: 1.2 µmExposure: Perkin Elmer 340

Aperture: 1Slit Width: 1 mm

PEB: 110°C, 60 sec, contactDevelopment: 60 sec, puddle, 23°C

AZ 300 MIFDeveloper

-60-55

-50-45

-40-35

-30-25

-20

200 300 400 500 600 700 800

Scan Setting

DO

F / µ

m

1,82,1

2,42,7

3,03,3

3,63,9

4,2C

D /

µm

DOF

CD


ADHESION ON ITOSoftbake: 90°C, 90 sec, proximity // 1.7 µm film thickness // Exposure: Nikon NSR-1755i7B i-line stepper, 0.54 NA, 0.6 σ // PEB: 110°C, 90 sec, proximity // Development: 60 sec, puddle, AZ 300 MIF Developer @ 23°C // ITO etching: etch time (70 sec) immersion in FeCl3/HCl at 45°C, ITO thickness: 200 nm

6 µm line reference7 µm line reference8 µm line reference

6 µm line7 µm line8 µm line

ADHESION ON THERMAL OXIDE Thermal oxide thickness: 690 nm // Primer HMDS, vacuum 30 min // Resist thickness: 1.33 µm on 2“wafer // Softbake: 90°C, 60 sec, contact // Exposure: Suss MA 56 // PEB: 110°C, 60 sec, contact // Development: 60 sec, immersion, AZ 300 MIF Developer @ 23°C // Oxide etch solution: Merck AF 87.5-12.5 @ 22°C // oxide etch time: 6 min // Remaining oxide thickness after etch: 75 nm

100 µm edge 100 µm edge 100 µm edge

100 µm edge 7 µm line


Softbake: 90°C, 90 sec, proximityFilm Thickness: 1.2 µm, EmaxExposure: Nikon NSR- 1505G7E

g-line stepper0.54 NA, 0.5 σ


AZ 300 MIFDeveloper

Measurement: Hitachi S-8840 CD SEM 0,45

0,55

0,65

0,75

0,85

0,95

0,45 0,55 0,65 0,75 0,85 0,95

CD nominal / µm

CD

mea

sure

d / µ

m

220 mJ/cm²CD nom.CD +10%CD -10%

PROCESS on bare silicon substrateSoftbake: 90°C, 90 sec, proximity // 1.2 µm film thickness // Exposure: Nikon NSR-1505G7E g-line stepper, 0.54 NA, 0.5 σ // PEB: 110°C, 90 sec, proximity // Development: 60 sec, puddle, AZ 300 MIF Developer @ 23°C



0.45 µm 0.50 µm 0.55 µm 0.60 µm 0.70 µm 1.0 µm

-0.2 µm 0 µm 0.4 µm 0.8 µm 1.0 µm 1.2 µm

g-LINE THIN FILM INTERFERENCE(on bare silicon)

Softbake: 90°C, 90 sec, proximityExposure: Nikon NSR-1505G7E

g-line stepper0.54 NA, 0.5 σ


AZ 300 MIFDeveloper

8595

105115125135145155

1,1 1,2 1,3 1,4 1,5 1,6 1,7


Dos

e-to

-Cle

ar /

mJ/

cm²

ULTRATECH 1500 PERFORMANCE on bare silicon substrateSoftbake: 90°C, 90 sec, proximity // 1.2 µm film thickness // Exposure: Ultratech 1500 1X stepper // PEB: 110°C, 90 sec, proximity // Development: 60 sec, puddle, AZ 300 MIF Developer @ 23°C



-2.0 µm -1.5 µm -0.5 µm 0.5 µm 1.5 µm 2.0 µm

0.65 µm 0.70 µm 0.80 µm 0.90 µm 1.0 µm

EXPOSURE LATITUDE 1.0 µm dense lines

110 mJ/cm² 120 mJ/cm² 140 mJ/cm² 160 mJ/cm² 180 mJ/cm² 190 mJ/cm²

CAUCHY COEFFICIENTS A B CUnbleached 1.6018 0.0098963 µm² 0.00068636 µm4

1.6018 9.8963 x 105 Å² 6.8636 x 1012 Å4

Bleached 1.5952 0.0084508 µm² 0.0006556 µm4

1.5952 8.4508 x 105 Å² 6.556 x 1012 Å4

REFRACTIVE INDEX 365 nm 405 nm 435 nm 633 nmUnbleached n 1.7014 1.6803 1.6826 1.6308

k 0.0202 0.0244 0.0166 0

Bleached n 1.6913 1.6670 1.6530 1.6204k 0.0017 0.0010 0 0.0001

DILL PARAMETERS A B Ci-line 0.64 µm-1 0.075 µm-1 0.0159 cm²/mJh-line 0.76 µm-1 0.035 µm-1 0.0244 cm²/mJg-line 0.45 µm-1 0.036 µm-1 0.0152 cm²/mJ

The information contained herein is, to the best of our knowledge, true and accurate, but all recommendations are made without guarantee because theconditions of use are beyond our control. There is no implied warranty of merchantability or fitness for purpose of the product or products described here. Insubmitting this information, no liability is assumed or license or other rights expressed or implied given with respect to any existing or pending patent,patent application, or trademarks. The observance of all regulations and patents is the responsibility of the user.

AZ, the AZ logo, BARLi and Aquatar are registered trademarks of AZ Electronic Materials. v2

AZ Electronic Materials(Germany) GmbH

Rheingaustrasse 190D-65203 WiesbadenGermanyTel. +49 (611) 962-6867Fax +49 (611) 962-9207

AZ Electronic Materials(USA) Corporation

70 Meister AvenueSomerville, NJ 08876-1252USATel. +1 (908) 429-3500Fax +1 (908) 429-3631

AZ Electronic Materials(Japan) K.K.

9F Bunkyo Green Court Center2-28-8 Honkomagome Bunkyo-KuTokyo 113, JapanTel. +81 (3) 5977-7973Fax +81 (3) 5977-7894

AZ Electronic Materials(Korea) Industries Ltd.84-7, Chungdam-dong,Kangnam-ku, SeoulRepublic of KoreaTel. +82 (2) 510-8000/8442Fax +82 (2) 514-5918

AZ Electronic Materials(Taiwan) Co. Ltd.5th Floor No. 96 Chien Kuo North RoadTaipei, 104TaiwanTel. +886 2 2516-6886Fax +886 2 2516-5186

AZ Electronic Materials(China) Ltd.Block No. 45, Room 308, 555 Guiping RoadShanghai 200233ChinaTel. +86-21-64952767Fax +86-21-64954695

universal i-line/crossover photoresist series · 0.54 na, 0.6 σ// peb: 110°c, 90 sec, proximity...

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