UTB SOI for LER/RDF

EECSMin Hee Cho

Outline Introduction

LER (Line Edge Roughness) RDF (Random Dopant Fluctuation) Variation

Solution – UTB SOI Results Process of UTB

Conclusion

Introduction

TR (1947)

However, So many problems occur! Process, SCE / fundamental problems LER, RDF etc

3nm

Price : less than 1 Nano dollar for each TR cheaper and smaller

1m size ball

What is LER (Line Edge Roughness)

The contribution of gate edge roughness to leakage current and variability has been significantly increased with the MOSFETs scaling.

Actually surface is very rough.As device shrinks, the roughness of gate edge become problem

Variation due to LER

The main source of LER :

*Polygrain structure at the interface

*Thermal annealing process

(such as poly reoxidation)

* Litho-process

35nm channel lengthRms=2nm

Correlation length = 20nm

Distribution plot

200nm

Fundamental problemfr

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What is RDF (Random Dopant Fluctuation)

* Dopant is particle* Implantation or Diffusion :Each dopant distribute randomly. And we can’t predict its exact place.

*Long channel assumption: Doping distribution =continuous

* In short channel device the number of dopants in channel can be different from device to device affects Vth characteristics

Boron implantation and distribution (MC simulation)

Lg vs Current variation

As Lg decrease, the RDF problem become severer

Variation of On-current vs Lg(Bulk Transistor)

RDF – SNM in SRAM

SRAM : composed of 6 Transistor

Size of square : Static noise margin the larger, the better

For example

SNM- SRAM

Vin

Vou

tMany curves overlapIt is very hard to get good properties of SRAM

SNM become worseSNM become worse

200 cases35nm Lg

Distribution plot for SNM

SNM of SRAM

Solution – UTB SOI

There are several solution for distribution change the process (litho, implantation etc) change the structure (Fin-FET, SOI etc.)

In this review, I focus on UTB SOI (Ultra Thin Body Silicon on Insulator)

LDD

BOX (SiO2)SOI (Si)

Gate

UTB SOI

Raised S/D reduced Resistance at S/D

No S/D Junction leakage

Thin SOI (5~10nm) Fullly Depleted (channel region controlled by only gate tightly) reduce lateral Field (Drain electric field) reduce the Short Channel effect (DIBL)

SCE is minimized Even though Gate length reduced, Vt changes very little (Gate length dependece reduced) LER effect reduced

FD SOI (Thin Body) Undoped Si reduce RDF effect

IntrinsicIntrinsic

ResultsRDF only LER only

Distribution improved drastically

Distribution plot for Vt

SRAM - SNM

Process of UTB

Substrate (Si)

BOX (SiO2)SOI(Si)

Wet etch

Substrate (Si)

BOX (SiO2)

SOI(Thick Si)

Oxidation

SOI(Si)2nm single crystal Si

Good controllability compared to CMP etc.

We can use this tech. in FinFET: Thick Fin oxidation thin Fin structure

2nm Thin Body

ConclusionAs transistor shrinks, the fundamental problems such

as (RDF, LER) become problems

UTB SOI can be one of solutions

UTB SOI : reduce lateral field SCE↓ LER ↓ : FD undoped Si RDF ↓

Review process of UTB SOI

References• “Simulation of Statistical Variability in Nano MOSFETs” Asen Asenov, 2007

VLSI

• “High Immunity to Threshold Voltage Variability in Undoped Ultra-Thin FDSOI MOSFETs and its Physical Understanding” O. Weber et al, 2008 IEDM

• “Evaluation of Intrinsic Parameter Fluctuations on 45, 32 and 22nm Technology Node LP N-MOSFETs” B Cheng et al, Solid-State Device Research Conference, 2008

• “Intrinsic Parameter Fluctuations in Decananometer MOSFETs Introduced by Gate Line Edge Roughness” Asen Asenov et al., TED 2003

• “Impact of SOI Thickness Fluctuation on Threshold Voltage Variation in Ultra-Thin Body SOI MOSFETs” Gen Tsutsui et al, TRANSACTIONS ON NANOTECHNOLOGY 2005

Thank you very much

See you again!

Q&A