v. g. kantser - krajowy punkt kontaktowy7pr.kpk.gov.pl/pliki/9207/v.g. kantser - md - institute...v....

V. G. KantserInstitute of Electronic Engineering and Industrial

Technologies of the Academy of Sciences of Moldova

Academiei str 3/3., Kishinev, MD-2028, Moldova

E-mail: [email protected]

Materials&Structures Engineering and Nanotechnologie s

Presentation Outline• Overview of Physical Investigations• IEEIT Scientific Potential• Some NanoTechnological and

Experimental Facilities, Developed Approaches

• Coments on Research Output • Several Selected Basic Results• Some applied works

Academy of Sciences of MoldovaDivision of Physics and Engineering

Institut of Applied Physics

Institut of Electronic Engineering and Industrial Te chnologies

Profile Members

Institut Geology and Seismology

State University of Moldova

InstitutionalMembers

ELIRI

AfilietedMembers RIF-ACVAAPARAT

Institut of Power Engineering

Informinstrument S.A.

Technical University of Moldova

BălŃi State University

Tiraspol State University

Institut ELIRI ASM Members 21Doctor Habilitat 74Doctor 219Scientific researchers 593

Main Areas of Physical Researches

• Physical Sciences Divisions in R.Moldova deliversresearch of the highest calibre in three major extendeddirections of the modern physics:

- Condensed Matter Physics- Material Sciences and Device Physics- Solid State Nanophysics and Nanotechnology

• The physical research in Moldova spans a wide varietyof different types of materials:- semiconductors, superconductors, magneticmaterials, optical materials, polymers, etc. - and uses a wide variety of different techniques: optical, magnetic, electrical, transport,spectrosco pyand X-ray scattering as well as theory

of the Academy of Sciencesof the Academy of Sciences ofof MoldovMoldovaa

IEIEEIEITT

Centre of Centre of MesoscopicMesoscopicElectronics and Material Electronics and Material

EngineeringEngineering

Centre of Electronics Centre of Electronics and Applied Biophysicsand Applied Biophysics

Centre of Medical Centre of Medical EquipmentEquipment

� Research of quantum electron processes and transport in anisotropic low dimensional systems; � Superconductivity, thermoelectricity and electronics of micro- and nanometerstructures;� Microtechnologies of solid state materials and structures for engineering of electronic sensors and devices;

� Design of generators and electronic equipment of electromagnetic millimeter waves for treatment of medical-biological objects; � General purpose electronic devices and equipment for measurement of vacuum, pressure, temperature in modern technological processes; � Design and development of electronic equipment for energetic systems;

� Design of equipment for diagnostic and therapy based on systems with lasers and optic diodes; � Design of electric surgery equipment; � Mathematical modelling for pathology, influence of physical factors and study of variants of pathology development for favourable choice of regimes of influence, application procedures, etc .

Scientific Human Potential

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Researchers

46464646

Engineers

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Technicalpersonal

IEETI STAFF145 employers

9drs.hab.

24drs 33

Withouttitle

Researchers

PhD students PhD students PhD students PhD students –––– 7777Young researchersYoung researchersYoung researchersYoung researchers–––– 13131313

Materials EngineeringThere is a wide-ranging area of research into the propertie s

of bulk semiconductors, superconductors, semimetals, thermoelectrics and low-dimensional structures, includ ingboth fundamental and applied properties.

The work carried out covers the growth of new materials, fabrication of these into quantum well ,wire, QD nanostructures and studies of the electrical and opticalproperties of many different structures at lowtemperature, high magnetic fields, high pressures.

Single crystal growthEpitaxial growth (MBE, MOCVD, Hot Wall etc)Microwire and Nanowire fabricationMagnetotransport and Thermoelectrical PhenomenaOptical and Photoelectrical PropertiesIR Laser Materials and Structures, Photodetectors

8

IEEIT International Proiects• Intas Project Microstructure and Chemistry of Bufferlayers in Multi-l ayered

Structures Based on High Temperature Superconducting Thin Films Coor: dr. hab. A.Sidorenco ,

• Intas Project Development of p-Type High Thermoelectric Performance Qu antum-wellStructures . Coord acad. V.Kantser

• Project BMBF Nr. MDA 01/007 (Germany)Superconducting MgB2 films for technical aplication s Coord Prof.A.Sidorenko

• Project Cooperativ Grant Program / CRDF (SUA)“Thermoelectric and Aharonov Bohm oscillations in Bi and its alloys quantum wires”

A.Nikolaeva• Project SCOPES (Swiss)

“New type of sensitive “contunuous”focal plane arrays for Terahertz radiaíondetection: developement of the phyzical principles of o peration”. Cord. Dr A. Nicorich

• Proiect BMBF Nr.MDA02/002 (Germany)“Spin-polarized electron transport in S/F Nanostruc tures”Coord acad. V.Kantser

Scientific State Program in IEEIT

• IEEIT is coordinator of 2 Scientific State Programs

1. Electronic Engineering for Economical developing

Coord. Academician D.Gitsu2. Nanotechnologies, Multifunctional Materials

and Electronic MicrosystemsCoord. Academician V.Kantser

MBE EQUIPMENT

Cool Power Equipment for Low Temperature Measurements

Some Methods of Nanostructure fabrication

• Solution-phase syntheses• Stack and draw technique• Epitaxy and Top-down lithography• Epitaxy and Unconventional lithographic

techniques

Schematic illustration of the glass-coated melt spinning process

Sketch of the laboratory-scale apparatus for wire fabrication by the HPIDC method

1a, 1b - vacuum valves; 2 - metallic tube; 3 - quartz tube; 4 - permanent-magnet system to movecapillaries; 5- supp ort for capillaries; 6 - glass capillaries; 7 - molten material; 8 - electric furnace; 9 -direction of furnace movement during wire c rystallisation

Template-Assisted Nanowire Fabrication

The monocrystalline Bi

nanowire of 50-70nm diameter in

the glass shell were obtained and investigated.

Centre of Centre of MesoscopicMesoscopic Electronics and Material EngineeringElectronics and Material Engineering


0 20 40 60 80 100 120 140 160

0,0

0,5

1,0

1,5

2,0

2,5

3,0

3,5

2'

H || CS

H || C2

(R-R

H=0

)/R

H=0

H, kOe

1

2

1'

The effect of quantization of magnetic flow, becoming apparent in the oscillation of the magnetoresistance with the period of hc/2eand the Berry phase, determinated by the spin-orbital splitting of the superficial states; (despicarea spin-orbitală a stărilor superficiale)

For the first time the negative field dependence of the transverse magnetoresistance R(H) in Bi nanowires was revealed;

19

Monocrystal Bismuth wire, d = 73 nm, T = 1.5 K.Magnetic field dependence of Phase shift of h/2e oscillations.

0 2 4 6 8 10 12 14

0,0

0,5

1,0

1,5

2,0

0 1 2 3 40,000

0,005

0,010

0,015

0,020

0,025

0,030Bi, d=73 nm, LMR, T=1.5 K

∆1=0.481 T (h/2e)

Pha

se S

hift

(2π)

B, T

F2=1.03 T-1

∆2=0,971 T

h/e

F1=2.06 T-1

∆1=0,485 T

h/2e

FFT for 0-13.5 T

Am

plitu

de

Frequency, 1/T

Bi, 73 nm, LMR, 1.5 K

Berry Phase

0

5

10

15

20

25

0 2 4 6 8 10 12 14

Experim Extrema, (After FFT High Pass Filter, F= 1.7) Osc without phase shift

Bi, 73 nm, LMR, 1.5 K

B, TN

umbe

r

∆=0.481 Th/2ed=74 nm


20

0 50 100 150 200 250 300 350

-20

-15

-10

-5

0

5

10

α, µ

V/K

Temperature, K

Bi-0,2 at%Sn

R=65kOhm

R=19kOhm

0 50 100 150 200 250 300-35

-30

-25

-20

-15

-10

-5

0

5

10

15

0 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750-15

-10

-5

0

S, µ

V/K

Θ, Degrees

Tst=102 K, T

end=99.6 K

B=0

B⊥=0.4 T, α=0o

B⊥=0.4 T, α=131o

Bi - 0.15 at% Sn wire R=4.8 kOhm

α, µ

V/K

Temperature, K

Temperature dependence of thermopower in Bi-0.2Sn and Bi-015Sn wires


Stack and draw approach for nanowirescomposires fabrication

Scheme of stack and Composites of glass and Bi- nanowiresdraw technique obtained by stack and draw technique

22


It was obtained a matrix of nanowire and magnetic metallic alloy (Ni-B-Si)(IEEIT-ELIRI)

Materiale nanocompozit sticl ă-nanofire

În premieră s-au propus şi realizat procedee de fabricare prin turnarea în sticlă înmuiată a compozitelor filiforme metalice de diametre micro- şi nanometrice şi lungimi mari.Cerere de brevet № 4705

Structuri integrate cu Structuri integrate cu microfiremicrofire şşi i nanofirenanofire

Institutul de Inginerie Electronic ă şi Tehnologii Industriale, ELIRI

Nanowire Deposition in Alumina

200-nm Bi nanowires deposited in 40-nm Bi nanowires deposited in thethe PAA with a vacuum PAA structure fabricated on adeposited Au film back-electrod wafer with a conducting adhesion layer

Z1DT of n-type Bi Nanowires

Optimal Z1DT: Trigonal > Binary > (012) > (101) >Bisectrix

M.S. Dresselhaus et al (1999), V.Kantser et al (2001)

Solution-phase syntheses

• Solution-phase synthesis, which involves the reduct ion of metal salts in a solution containing an appropriate stabil izer to control the growth and suppress the aggregation of the is a enough simple approach to forming PNSs.

• As illustration in Fig nanostructured PbTe and PbSnTe ob tained from hexan, tetracloretilen, chloroform etc. solution s in form of nanodot ensemble are presented.

A.Nicorici, T.Gutsul, et al NanoLet 2008

Nanowire Composites for Plasmonics

Dielectric or semiconductor material

Curmei E and Kantser V J. Phys:C. M. V.20,2008

Metal

Dispersion relations for bulk and interface plasmons

Bulk Interface

Solutions lie above light lineMetals: ħωp ≈ 10 eV; Semiconductors ħωp < 0.5 eV(depending on dopant conc.)

Solutions lie below light line

Dispersion of interface plasmon-polaritons in metal-nanowire-semiconductor composites

Frequency dependent dielectric properties of semicondu ctor(for dielectric ε = const !!!!)

open new opportunities to design the attributes of IPs with appearance of plasmon-fonon modes

( ) ( )( ) 12222 −∞ −−= ωωωωεωε TLc

Ordinary Waves

Curmei E and Kantser V J. Phys:C. M. V.20,2008

PNS based on Anisotropy

• There are several posibilitiespossibilities:

1. Nanocomposite of materials withanisotropic dielectric constant.

2. Materials with anisotropic characteristics of electrons

3. Structures with non-cylindrical (non-spherical) configurations

4. Low symmetrical structures with cylindrical of spherical geometry of embedded arrays in composite

Elser J. and Podolskiy V.A. PRL V.100, (2008) V., Bejenari I, Kantser V. Phys.Rev.B 78, 2008

PNS based on anisotropic Materials

Bejenari I, Kantser V. Phys.Rev.B 78, 2008

AFM images of a structures of PbTe/BaF2/CaF2/Si(111 ) and BaF2/CaF2/Si(111).


Structures of high quality BaF2/CaF2/Si(111) for the deposition of materials AIVBVI (PbTe) for IR radiation detection sensors

Digital Digital SuperlaticesSuperlatices

Conductivity and Seebeck coefficient S of p-PbTe/Pb0.91Eu0.09Te QW as a function of the

well width d

C urves 1 are for p=10 19cm -3; 2 - for p = 5x10 19cm -3 and 3 – forp=10 20cm -3

A.Casian, V.Kantser et al Proc.ICT2002. (2002)

Solution-phase syntheses

• Solution-phase synthesis, which involves the reduct ion of metal salts in a solution containing an appropriate stabil izer to control the growth and suppress the aggregation of the is a enough simple approach to forming PNSs.

• As illustration in Fig nanostructured PbTe and PbSnTe ob tained from hexan, tetracloretilen, chloroform etc. solution s in form of nanodot ensemble are presented.

A.Nicorici, T.Gutsul, et al NanoLet 2008

Nanostructured PbTe and PbSnTe

0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,20,0

0,2

0,4

0,6

0,8

1,0 PbSnTe t

sintezei= 2min

PbTe tsintezei

= 2min, T = 160C

PbTe tsintezei

= 2min, T = 175C

PbTe:Yb tsintezei

= 2min, T = 175C

Abs

orba

nce,

(a.

u.)

λ, µm

0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,20,0

0,2

0,4

0,6

0,8

1,0

1,2

1,4

COT2 COT20 CT2175 CT20 CT2160 CTY15

Abs

orba

nce,

(a.

u.)

λ, µm

A new technology for the fabrication of high qualityMgB2 superconductive films have been elaborated


The problem of technical application of the pinning force and increase of the critical current in MgB2


0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 340

5

10

15

20

25

30

35

0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 340

5

10

15

20

25

30

35

0,0

0,560,600,64

Thi

ckne

ss o

f N

b a

nd C

uN

i (nm

)

Sample #

Nb

CuNi

Fig. 1,

V. Zdravkov et al.

64 60 56

Ni content

Ni c

once

ntra

tion

in C

uNi (

%)

S15

0

0 10 20 30 40 500

2

4

6

8

Tc (dNb)

dCuNi≈56 nm

Experiment Calculation

Tc

(K)

dNb (nm)

The results of a Rutherford backscattering spectrometry (RBS) investigation: S15 batch of samples, dNb≈7.3 nm. The RBS error bars are within the point size.

The first convinced experimental observation of rere--entrant superconductivity entrant superconductivity phenomenonphenomenon published in Phys. Review Letters 97, 057004 (august 2006)

0 5 10 15 20 25 30 350

1

2

3

4

5

6

0

1

2

3

4

5

6

7

S15

S16

Tc

(K)

dNb ≈ 7.3 nm

Tc

(K) dNb ≈ 8.3 nm

dCuNi

(nm)

The The experimental experimental observation of observation of largelarge--scale scale oscillation of oscillation of TTccfrom thickness from thickness of of ferromagnetferromagnetlayer layer ddCuNiCuNi(S16) (S16) and the Reand the Re--entrant entrant phenomenon phenomenon (S15)(S15)

TTcc((ddNbNb)) forfor aaCuCu4141NiNi5959 toptop layerlayer ofof constantconstant thicknessthickness . . TheThe shadowedshadowedareaarea indicatesindicates thethe asymptoticasymptotic valuesvalues ofofTTccddCuNCuN forforNbNb filmsfilms ofof 6.56.5––8.5 8.5 nmnm thicknessthickness . . ThisThisregionregion ofof steepsteep TTccvariationvariation isis thethe keykey conditioncondition toto observeobservelargelarge --amplitudeamplitudeoscillationsoscillations ofof thethe superconductingsuperconducting TTcc..

Publica Ńii Reprezentative• A. Nikolaeva, T. E. Huber, D. Gitsu, and L. Konopko. Diameter-dependent

thermopower of bismuth nanowires. Phys.Rev. B 2007 (in press).• Huber T.E., Nikolaeva A.A., Gitsu D.V. , Konopko L.A., Graf M.J. Quantum

confinement and surface effect in Bi nanowires. Physica E, V 37, 2007, p. 194-199• G.Korotcenkov, Metal oxides for solid state gas sens ors. What determines our

choice ? (Review), Mater. Sci. Eng. B 139 (2007) 1-23.• G.Korotcenkov, Practical aspects in design of one-el ectrode semiconductor gas

sensors: status report. (Review), Sensors and Actuators B 121 (2007) 664-678.• Caraman M., Leontie L., Rusu I.I., Chiricenco V. Phot oelectrical properties of

layered GaS single crystals and related structures . Jour.Optoelect. Adv.Mat, 2007. /In press/

• В. Канцер, Д. Меглей, М. Дынту, А. Русу. Дефектность и механическиесвойства нитевидных кристаллов Bi2Te3 . Известия высших учебных заведений«Материалы электронной техники», 2007

• V. Zdravkov , A. Sidorenko et al. Reliable Preparation of High Quality Superconducting Thin MgB2 Films for Application . J. of Physics: Conference Series 61 (2007) 606–611

• Elena Condrea, Jos A A J Perenboom . High-field magnetotransport properties of bismuth nanowires Physica Status Solidi (a) ,2007 (in press).

• Globa P.G., Zasavitsky E. A., Kantser V.G., Sidelnikov a S.P., Dikusar A.I. Kineticsof electrodeposition of silver and copper at template syn thesis of nanowires //http://xxx.lanl.gov/ftp/arxiv/papers/0707/0707.0749 .pdf

DEVICE FOR CONTROL OF PARAMETERS AND

TECHNOLOGICAL PROCESSES

(ACD-1)

The device is intended for use in the system of twenty-four-hour monitoring of a production area operative state and for control of production technological parameters: temperature and humidity of air, barometer pressure, air state, equipment temperature, excessive pressure in production lines, as well as for regulation and remote control of the execution units: heating, cooling, ventilation ones and other electric devices by the user program of 32 program steps.

Characteristics of the ACD-1:Barometer pressure measurement range:...from 500 to 800 mm Hg ±±±±1 mm Hg;Temperature measurement range:…… .…………. from -55oC to 125oC ±±±±0.5oC; Humidity measurement range:………… .....……………. from 0 to 100% ±±±±2%;

Centre of Electronics and Applied BiophysicsCentre of Electronics and Applied Biophysics

Pressure-measuring device VTB-10

• The device designed on the basis of thermoelectric pressure transducers is intended for measurement and control of gas pressure in vacuum systems of high and medium vacuum.

• The device may be applied in various branches of industry using vacuum technologies, in scientific researches, for testing and certification of vacuum technique.


Generator of low-intensity electromagnetic extremely-high frequency (EHF).They are applied to influence biologically active loci or acupuncture loci (determination of meridians)

It was assimilated the production of several types of mm-wave generators of the UEMA type with one, two, and three generators 7.1; 5.6; 4.9 mm.


The electrosurgical unit ETC – 6 for specialized medical practices

Technical Data•Coagulation•Monopolar SOFT COAG•Form of HF current Sine-shaped•Nominal HF output 50 W at 200 ohms•Monopolar FORCED COAG•Form of HF current Pulse-modulated •Nominal HF output 80 W at 500 ohms•BIPOLAR COAG•Form of HF current Sine-shaped•Nominal HF output 50 W at 200 ohms Dimensions (W x H x D) 275 x 105 x 255 mmPower connection•Power voltage 230V/ 240V ±10%, 50/60 Hz

This unit offers two qualities of monopolarcutting and three coagulation functions (one of which is bipolar). 120 watts of output are more than adequate for limited procedures. The surgeon can even set a lower limit based on his own preferences and experience

Cold plasma coagulator

Centre of Medical EquipmentCentre of Medical Equipment

Thank you !!!Valeriu KANTSER

v. g. kantser - krajowy punkt kontaktowy7pr.kpk.gov.pl/pliki/9207/v.g. kantser - md - institute...v....

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