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Product Data

V400ACE™ Focused Ion BeamHigh performance circuit edit and design debug solution

The V400ACE™ Focused Ion Beam (FIB) system incorporates the latest developments in ion

column design, gas delivery and end point detection to provide ast, ecient, cost-eective

editing on advanced integrated circuits. Circuit editing allows product designers to reroute

conductive pathways and test the modifed circuits in hours, rather than the weeks or

months that would be required to generate new masks and process new waers. Fewer,

shorter modifcation and test cycles allow manuacturers to ramp new processes to proft-

able high volume yields aster, and be frst to market with premium priced new products.

The V400ACE is specifcally designed to meet the challenges o advanced designs and

processes: smaller geometries, higher circuit densities, exotic materials and complex inter-

connect structures. The V400ACE can be confgured or backside editing with an optional

IR microscope and bulk silicon trenching package.

Tomahawk™ Ion ColumnFEI’s Tomahawk™ Ion Column delivers unrivalled capability and exibility with seamless

operation rom 30 kV to 2 kV. High current density milling at 30 kV ensures rapid material

removal and increased throughput, while low kV operation is useul or selective etching o 

copper.

NanoChemix™ Gas Delivery

FIB circuit editing tools use controlled amounts o specifc gases, injected near the beam

at the sample surace, to enhance the speed and selectivity o the milling process, and to

deposit conductive and insulating materials in precisely controlled patterns. The V400ACE’s

innovative NanoChemix™ gas delivery system increases editing exibility with variable

pressure control and a wide variety o solid, liquid or gas precursor materials. Its uniquetri-nozzle design ensures a symmetric, high-ux ow o agents. A dedicated central nozzle

delivers precursor or metal depositions. Dual opposing nozzles deliver etch gases and

eliminate the shadowing that occurs in trenches milled using single-nozzle systems. Gas

mixtures are used to improve electrical perormance o insulator depositions. Automated

purge routines and controlled gas volumes provide ast, easy switching between gases and

shorten pump down times. Integrated toxic gas monitors and complete compliance with

SEMI S2 standards ensure operator saety.

Key benets• Fast, precise circuit modifcations allow design

changes in hours without processing new silicon

• NanoChemix gas delivery system providesimproved speed, exibility, uniormity, andquality in material removal and deposition

• Tomahawk ion column delivers more current toa smaller spot or aster, more precise milling

• Simultaneous plots o SE and specimen currentimprove end point detection

• Fast, accurate cross sectioning reveals deects

and subsurace eatures• Electrical eedthroughs or probing and chip

testing applications

• Optional backside editing capability with nearinrared microscope and Si trenching package

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World HeadquartersPhone: +1.503.726.7500

FEI EuropePhone: +31.40.23.56000

FEI JapanPhone: +81.3.3740.0970

FEI AsiaPhone: +65.6272.0050

© 2010. We are constantly improving the perormance o our products, so all specifcations are subject to change without notice.V400ACE, NanoChemix, Tomahawk, AutoFIB, AutoTEM, CoppeRx and the FEI logo are trademarks o FEI Company, and FEI is a registered trademark o FEI Company. All othertrademarks belong to their respective owners.

See Beyond at FEI.com

DS0069 02-2010

Product Data V400ACE™ Focused Ion Beam

Backside Edit Option

A near inrared microscope permits imaging o target structures

through ront side dielectric and backside bulk silicon or ast, accurate

navigation. Devices with backside silicon up to ull thickness can be

imaged allowing editing devices sensitive to thinning or with package

elements that prevent polishing. The bulk silicon trenching package

includes a special coaxial gas delivery nozzle that accelerates bulk

silicon etching or aster access to circuitry rom the backside or circuit

editing or ailure analysis.

Figure 1: View o circuitry through the backside silicon using integrated IRmicroscope showing resolution <0.5 µm

Ion Column Tomahawk, Ga liquid metal1000 hour lietime

Acc. Voltage 0.5 kV - 30 kV

Beam Current 1.1 pA - 65 nA

Image Resolution 4.5 nm

Stage 5-axes motorized eucentricX, Y motion 100 mmTilt -10° to 60°Rotation 360°

End Point Detect Simultaneous SE/specimen currentauto scaled plots

Operating System Windows® based

Specications

End Point Detection

The V400ACE’s simultaneous, auto scaled plots o secondary electron

and specimen current signals ensure reliable, accurate end point

detection when the milling procedure reaches the target structure.

Figure 2: High aspect ratio via ormed through oxide and endpointedon copper metal line using V400ACE’s improved ion optics. Minimumdimension here is 50 nm.

Enhanced Navigation and Automation

A fve axis, piezo driven stage and seamless integration with CAD

sotware provide ast, accurate navigation. The CAD polygons can be

overlaid on the IR microscope or FIB image to accurately target sub-

surace eatures. The stage accommodates a wide range o samples

rom packaged parts to waers pieces. Electrical eedthroughs enable 

in situ electrical connections. Optional automation sotware includes

AutoFIB™ or multi site cross sectioning.

Key Options

Hardware

• Charge Neutralizer (electron ood gun)

• Bulk Si Trenching

• IR Microscope

• Electrical Feedthroughs

Software

• AutoFIB (with drit compensation)

• CAD Navigation

NanoChemix Gas Delivery

XeF2 Insulator and low k etch

H2O, O2 Organics and copper etch

Cl2  Aluminum and silicon etch

TMCTS Insulator deposition

W(CO)6 Tungsten deposition