Upload File

verilog-a mos model

prev
next
out of 15
Download verilog-a mos model

Upload: avirup-dasgupta

Post on 14-Apr-2018

222 views

Category:

Documents


0 download

Report

TRANSCRIPT

  • 7/30/2019 verilog-a mos model

    1/15

    By:

    AVIRUP DASGUPTA (Y9227159)

    VAIBHAV GOYAL (Y9635)

    RAHUL JHA (Y9450)

    Threshold Voltage Based Modelling

    Course: Integrated Circuit Technology

  • 7/30/2019 verilog-a mos model

    2/15

    Introduction

    Threshold voltage is basically the value of gate-source voltage to turn on the transistor.

    Threshold voltage is very important parameter in

    the modeling of MOSFET device.

    Depending on Threshold voltage, the MOSFET

    operation can be divided into three major regions: Weak Inversion Region: Gate voltage less than threshold

    voltage. Here inversion charge density is less than doping

    concentration Transition Region: Gate voltage comparable to Threshold

    voltage.

    Strong Inversion Region: Gate voltage higher compared to

    threshold voltage. Inversion charge density higher than doping

    concentration.

  • 7/30/2019 verilog-a mos model

    3/15

    Standard Model

    The threshold voltage is governed by thefollowing equation

    Vth : Threshold voltage, VFB : Flatband Volatge

    ,,,,,,,,,,,,,,,,,,,,,,,

    However the standard model applies only to long uniformly doped channel

  • 7/30/2019 verilog-a mos model

    4/15

    Vertical Non-Uniform Doping

    More concentration near Si/SiO2 interface anddecreases throughout the interface

    Modeling governed by following equations:

    Where gamma is the body effect coefficient for doping, Vbm is maximumbody bias and Vbx is body bias for depletion width = Xt such that

  • 7/30/2019 verilog-a mos model

    5/15

    Other Effects

    DIBL Effects: Drain voltage control over channelbecause of high drain voltage. Modeling is

    governed by:

    where KDIBL is given by

    Mobility Model

  • 7/30/2019 verilog-a mos model

    6/15

    Effective Vgs-teffand Vdseff Current equation is different in three regions

    (mentioned earlier). Hence single smooth

    equations of Vgs-teffand Vdseffhave been

    developed that work perfectly in all three regions.

    Here delta is the smoothening factor.

  • 7/30/2019 verilog-a mos model

    7/15

    Current Calculation

    Having smoothened equations for Vgsteffand Vdseff, we now derive the current equation valid for all

    the regions:

  • 7/30/2019 verilog-a mos model

    8/15

    Channel Length Modulation and DIBL Effect

    The modified equations once we include channel lengthmodulation and DIBL effect can be given as

  • 7/30/2019 verilog-a mos model

    9/15

    Voltage Saturation

    Source-Drain Resistance

    Impact Ionization Current

  • 7/30/2019 verilog-a mos model

    10/15

    Charge Calculations The inversion charge density from a distance x from the source

    can be calculated by the following formula:

    Hence Total Inversion Charge is the integration from 0 to Length

    of the channel which gives:

    In Accumulation region: Qacc= Cox(Vgb - Vfb) = QG

    In Depletion region: Qg = Qdep

    In Inversion region: Qg= -QI

    Charge equation valid in all regions should be of form:

    max(min(Qacc, Qdep),QI) in max and min functions can be

    considered as below:

  • 7/30/2019 verilog-a mos model

    11/15

    Simulation Results

    Ids versus Vds plot for different Vg

    500

    400

    300

    200

    100

    00 0.5 1 1.5 2

    2.5

  • 7/30/2019 verilog-a mos model

    12/15

    Simulation Results

    Ids versus Vgs on semilog axis Plot. DIBL effectcan be seen

    0 0.5 1 1.5 2

    2.5

    -2.5

    -5.0

    -7.5

    -10.0

    -12.5

    -15.0

  • 7/30/2019 verilog-a mos model

    13/15

    Simulation Results Impact Ionisation Current versus Vg on semilog axis for different

    Vds.

    0 0.5 1 1.5 2

    2.5

    2.5

    0

    -2.5

    -5.0

    -7.5

    -10.0

    -12.5

  • 7/30/2019 verilog-a mos model

    14/15

    Simulation Results

    3rd order derivatives are continuous

    0 0.5 1 1.5 2

    2.5

    35.0

    30.0

    25.0

    20.0

    15.0

    10.0

    5.0

    0

    -5.0

  • 7/30/2019 verilog-a mos model

    15/15

    THANK YOU


How do you model a RAM in Verilog. Basic Memory Model

TOP-LEVEL VERILOG MODEL A THESIS IN ELECTRICAL …

Unclassified Report: Physical Background of MOS Model 11 · MOS Model 11 is a symmetrical, surface-potential-based model. It in-cludes an accurate description of all physical effects

Thesis Verilog AMS Model

Model Output Statistics (MOS) - Objective Interpretation of NWP Model Output

Unclassified Report: Proceedings of the MOS Model 11 workshop · MOS Model 11 (MM11), the successor of MOS Model 9. On April 16th, 2002, a MOS Model 11 workshop was organized by MOS4YOU

MOS Model, level 903 - NXP SemiconductorsMOS Model, level 903 July 2011 TOC Index Quit t file t t t 1.1 Introduction General Remarks MOS Model 9 is a compact MOS-transistor model,

Model Output Statistics (MOS) - Objective Interpretation

Introduction to MOS Transistors Section 6.1-6.4. Outline Similarity Between BJT & MOS Introductory Device Physics Small Signal Model

MOS Model 11

ECFA LEVEL-1 MOS TRANSISTOR MODEL

MOS AVN = Dynamical Model –Seven fundamental equations ! AVN MOS = Statistical Model –No seven fundamental equations ! –Equations are statistical, not

Verilog Fundamentals · Verilog Fundamentals. VERILOG FUNDAMENTALS ... Verilog is a HARDWARE DESCRIPTION LANGUAGE. ... Level 2 : Design a digital system using Verilog . (weightage

A Verilog-A Compact Model for Negative Capacitance FET

New Generation Verilog-A Model Development Tools: VAPP and

Verilog II CPSC 321 Andreas Klappenecker Today’s Menu Verilog, Verilog

Dynamic Verilog-A Model of a Magnetoresistive Spin Valve

Model Output Statistics (MOS) - Objective …miyoshi/class/201201/aosc630/guests/...Model Output Statistics (MOS) - Objective Interpretation of NWP Model Output University of Maryland

Verilog-A Compact Model Standardization COMON/MOS …mos-ak.org/india/presentations/Grabinski_MOS-AK_Indi… ·  · 2012-04-15Verilog-A Compact Model Standardization COMON/MOS-AK/GSA

konkursi-as.tu-sofia.bgkonkursi-as.tu-sofia.bg/doks/SF_FET/ad/143/109_candidat.pdf · Model equations are coded in Matlab and Verilog-A. Verilog-A model ... An implementation of the

Verilog-A Debug Tool: AHDL Linter - MOS-AK · –Verilog-AMS, –VHDL-AMS behavioral models. •Diagnose operates already for SystemVerilog-AMS connect module. •Diagnose and AHDLLinter

Aging model for a 40 V Nch MOS - MOS-AK Research Groupmos-ak.org/paris/papers/P02_Alagi_MOS-AK_Paris.pdf · Aging model for a 40 V Nch MOS, ... HCI on 40V Nch drift ... Vds=44 50

Optimized Extraction of MOS Model Parameters

Verilog-A model for avalanche dynamics and quenching in

Model Checking of Verilog RTL using IC3 ... - GitHub Pages

1 Lecture 1: Verilog HDL Introduction. 2 What is Verilog HDL? Verilog Hardware Description Language(HDL)? –A high-level computer language can model, represent

L1 MOS Model

MODEL ANALYSIS AND PARAMETER EXTRACTION FOR MOS CAPACITOR

BSIM4 Model Verilog-A Implementation - Silvaco · PDF fileBSIM4 Model Verilog-A Implementation BSIM4 Model The Verilog-A hardware description -A hardware description language opens

New MOS Model 11, level 1100 · 2015. 11. 5. · MOS Model 11 is a surface-potential-based model. Surface Potential The surface potential is defined as the electrostatic potential

Verilog-A/MS for RF Simulation - MOS-AK · PDF fileTiburon Design Automation Verilog-A/MS for RF Simulation Marek Mierzwinski, Patrick O'Halloran, Boris Troyanovsky, and David Sharrit

Verilog modeling* for synthesis of ASIC designsnelson/courses/elec4200/VHDL/Verilog...HDLs in Digital System Design • Model and document digital systems • Behavioral model •

MOS-AK Group Meeting : MOS Model 11 MOS Model 11 R. van Langevelde, A.J. Scholten and D.B.M. Klaassen Philips Research, The Netherlands MOS-AK Group Meeting02

Altera’s Introduction to Verilog - PLDWorld.com · Verilog Overview! Basic Structure of a Verilog Model! Components of a Verilog Module – Ports – Data Types – Assigning Values

MOS-AK FOSS Compact Modeling Perspective · NGSpice & ADMS Ngspice uses ADMS for Verilog-A modeling: ADMS is a code generator that converts electrical models written in Verilog-A