volume change for a uniaxial stress isotropic elasticity in 3d
TRANSCRIPT
1
EE 247B/ME 218: Introduction to MEMS DesignLecture 13m1: Mechanics of Materials
CTN 3/4/14
Copyright Ā© 2014 Regents of the University of California
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 12
Volume Change for a Uniaxial Stress
Stresses acting on a differential
volume element
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 13
Isotropic Elasticity in 3D
ā¢ Isotropic = same in all directionsā¢ The complete stress-strain relations for an isotropic elastic solid in 3D: (i.e., a generalized Hookeās Law)
( )[ ]zyxx EĻĻĪ½ĻĪµ +ā=
1
( )[ ]xzyy EĻĻĪ½ĻĪµ +ā=
1
( )[ ]yxzz EĻĻĪ½ĻĪµ +ā=
1
xyxy GĻĪ³ 1
=
yzyz GĻĪ³ 1
=
zxzx GĻĪ³ 1
=
Basically, add in off-axis strains from normal stresses in other directions
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 14
Important Case: Plane Stress
ā¢ Common case: very thin film coating a thin, relatively rigid substrate (e.g., a silicon wafer)
ā¢ At regions more than 3 thicknesses from edges, the top surface is stress-free ā Ļz = 0
ā¢ Get two components of in-plane stress:
)]0()[1( +ā= xyy E ĻĪ½ĻĪµ
)]0()[1( +ā= yxx E ĻĪ½ĻĪµ
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 15
Important Case: Plane Stress (cont.)
ā¢ Symmetry in the xy-plane ā Ļx = Ļy = Ļā¢ Thus, the in-plane strain components are: Īµx = Īµy = Īµwhere
and where
Ī½ā=ā²
1EE
EEEx ā²
=ā
=ā=Ļ
Ī½ĻĪ½ĻĻĪµ
)]1([])[1(
Biaxial Modulus =Ī
2
EE 247B/ME 218: Introduction to MEMS DesignLecture 13m1: Mechanics of Materials
CTN 3/4/14
Copyright Ā© 2014 Regents of the University of California
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 16
Edge Region of a Tensile (Ļ>0) Film
Net non-zero in-plane force (that we just analyzed)
At free edge, in-plane force must be zero
Thereās no Poisson contraction, so
the film is slightly thicker, here
Film must be bent
back, here
Discontinuity of stress at the attached corner ā stress concentration
Peel forces that can peel the film off the surface
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 17
Linear Thermal Expansionā¢ As temperature increases, most solids expand in volumeā¢ Definition: linear thermal expansion coefficient
Remarks:ā¢ Ī±T values tend to be in the 10-6 to 10-7 rangeā¢ Can capture the 10-6 by using dimensions of Ī¼strain/K, where 10-6 K-1 = 1 Ī¼strain/K
ā¢ In 3D, get volume thermalexpansion coefficient
ā¢ For moderate temperature excursions, Ī±T can be treated as a constant of the material, but in actuality, it is a function of temperature
dTd x
TĪµ
Ī± = [Kelvin-1]Linear thermal expansion coefficient =Ī
TVV
TĪ=Ī Ī±3
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 18
Ī±T As a Function of Temperature
ā¢ Cubic symmetry implies that Ī± is independent of direction
[Madou, Fundamentals of Microfabrication, CRC Press, 1998]
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 19
Thin-Film Thermal Stress
ā¢ Assume film is deposited stress-free at a temperature Tr, then the whole thing is cooled to room temperature Tr
ā¢ Substrate much thicker than thin film ā substrate dictates the amount of contraction for both it and the thin film
Silicon Substrate (Ī±Ts = 2.8 x 10-6 K-1)
Thin Film (Ī±Tf)
Substrate much thicker than thin film
3
EE 247B/ME 218: Introduction to MEMS DesignLecture 13m1: Mechanics of Materials
CTN 3/4/14
Copyright Ā© 2014 Regents of the University of California
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 20
Linear Thermal Expansion
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 21
MEMS Material Properties
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 22
Material Properties for MEMS
[Mark Spearing, MIT]
ā(E/Ļ) is acoustic velocity
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 23
Youngās Modulus Versus Density
[Ashby, Mechanics of Materials,
Pergamon, 1992]
Lines of constant acoustic velocity
4
EE 247B/ME 218: Introduction to MEMS DesignLecture 13m1: Mechanics of Materials
CTN 3/4/14
Copyright Ā© 2014 Regents of the University of California
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 24
Yield Strengthā¢ Definition: the stress at which a material experiences significant plastic deformation (defined at 0.2% offset pt.)
ā¢ Below the yield point: material deforms elastically ā returns to its original shape when the applied stress is removed
ā¢ Beyond the yield point: some fraction of the deformation is permanent and non-reversible
True Elastic Limit: lowest stress at which dislocations move
Proportionality Limit: point at which curve goes nonlinear
Elastic Limit: stress at which permanent deformation begins
Yield Strength: defined at 0.2% offset pt.
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 25
Yield Strength (cont.)ā¢ Below: typical stress vs. strain curves for brittle (e.g., Si) and ductile (e.g. steel) materials
StressTensile Strength
Fracture
Ductile (Mild Steel)
Brittle (Si)
Proportional Limit
Strain[Maluf]
(Si @ T=30oC)
(or Si @ T>900oC)
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 26
Youngās Modulus and Useful Strength
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 27
Youngās Modulus Versus Strength
[Ashby, Mechanics of Materials,
Pergamon, 1992]
Lines of constant maximum strain
5
EE 247B/ME 218: Introduction to MEMS DesignLecture 13m1: Mechanics of Materials
CTN 3/4/14
Copyright Ā© 2014 Regents of the University of California
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 28
Quality Factor (or Q)
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 29
Lr hWr
VPvi
Clamped-Clamped Beam Ī¼Resonator
Smaller mass higher freq. range and lower series Rx
Smaller mass higher freq. range and lower series Rx(e.g., mr = 10-13 kg)(e.g., mr = 10-13 kg)
Youngās Modulus
DensityMass
Stiffness
ĻĻĪæ
ivoi
203.121
rr
ro L
hEmkf
ĻĻ==
Frequency:
Q ~10,000
vi
Resonator Beam
Electrode
VP
C(t)
dtdCVi Po =
Note: If VP = 0V device off
Note: If VP = 0V device off
io
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 30
Quality Factor (or Q)ā¢Measure of the frequency selectivity of a tuned circuit
ā¢ Definition:
ā¢ Example: series LCR circuit
ā¢ Example: parallel LCR circuit
dB3CyclePer Lost EnergyCyclePer Energy Total
BWfQ o==
( )( ) CRR
LZZQ
o
o
ĻĻ 1
ReIm
===
( )( ) LGG
CYYQ
o
o
ĻĻ 1
ReIm
===
BW-3dB
fo f
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 31
Selective Low-Loss Filters: Need Q
ā¢ In resonator-based filters: high tank Q ā low insertion loss
ā¢ At right: a 0.1% bandwidth, 3-res filter @ 1 GHz (simulated)
heavy insertion loss for resonator Q < 10,000 -40
-35
-30
-25
-20
-15
-10
-5
0
998 999 1000 1001 1002
Frequency [MHz]
Tran
smis
sion
[dB
]
Tank Q30,00020,00010,000
5,0004,000
Increasing Insertion
Loss
6
EE 247B/ME 218: Introduction to MEMS DesignLecture 13m1: Mechanics of Materials
CTN 3/4/14
Copyright Ā© 2014 Regents of the University of California
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 32
ā¢Main Function: provide a stable output frequencyā¢ Difficulty: superposed noise degrades frequency stability
ĻĻĪæ
ivoi
A
Frequency-SelectiveTank
SustainingAmplifier
ov
Ideal Sinusoid: ( ) āā āā
āā= tofVotov Ļ2sin
Real Sinusoid: ( ) ( ) ( )āā āā
āāā
ā āā
āā ++= ttoftVotov ĪøĻĪµ 2sin
ĻĻĪæ
ĻĻĪæ=2Ļ/TO
TO
Zero-Crossing Point
Tighter SpectrumTighter Spectrum
Oscillator: Need for High Q
Higher QHigher Q
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 33
ā¢ Problem: ICās cannot achieve Qās in the thousandstransistors consume too much power to get Qon-chip spiral inductors Qās no higher than ~10off-chip inductors Qās in the range of 100ās
ā¢Observation: vibrating mechanical resonances Q > 1,000ā¢ Example: quartz crystal resonators (e.g., in wristwatches)
extremely high Qās ~ 10,000 or higher (Q ~ 106 possible)mechanically vibrates at a distinct frequency in a thickness-shear mode
Attaining High Q
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 34
Energy Dissipation and Resonator Q
supportviscousTEDdefects QQQQQ11111 +++=
Anchor LossesAnchor Losses
Material Defect Losses
Material Defect Losses Gas DampingGas Damping
Thermoelastic Damping (TED)Thermoelastic Damping (TED)
Bending CC-Beam
CompressionHot Spot
Tension Cold Spot Heat Flux(TED Loss)
Elastic Wave Radiation(Anchor Loss)
At high frequency, this is our big problem!
At high frequency, this is our big problem!
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 35
Thermoelastic Damping (TED)
ā¢Occurs when heat moves from compressed parts to tensioned parts ā heat flux = energy loss
QfT
21)()( =Ī©Ī=Ļ
pCTETĻ
Ī±4
)(2
=Ī
ā„ā¦
ā¤ā¢ā£
ā”
+=Ī© 222)(
fffff
TED
TEDo
22 hCKf
pTED Ļ
Ļ=
Bending CC-Beam
CompressionHot Spot
Tension Cold Spot Heat Flux(TED Loss)
Ī¶ = thermoelastic damping factorĪ± = thermal expansion coefficientT = beam temperatureE = elastic modulusĻ = material densityCp = heat capacity at const. pressureK = thermal conductivityf = beam frequencyh = beam thicknessfTED = characteristic TED frequency
h
7
EE 247B/ME 218: Introduction to MEMS DesignLecture 13m1: Mechanics of Materials
CTN 3/4/14
Copyright Ā© 2014 Regents of the University of California
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 36
TED Characteristic Frequency
ā¢ Governed byResonator dimensionsMaterial properties
22 hCKf
pTED Ļ
Ļ=
Ļ = material densityCp = heat capacity at const. pressureK = thermal conductivityh = beam thicknessfTED = characteristic TED frequency
Critical D
amping
Fac
tor,
Ī¶
Relative Frequency, f/fTED
Q
[from Roszhart, Hilton Head 1990]
Peak where Q is minimizedPeak where Q is minimized
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 37
Q vs. Temperature
Quartz Crystal Aluminum Vibrating Resonator
Q ~5,000,000 at 30K
Q ~5,000,000 at 30K
Q ~300,000,000 at 4KQ ~300,000,000 at 4K
Q ~500,000 at 30K
Q ~500,000 at 30K
Q ~1,250,000 at 4KQ ~1,250,000 at 4K
Even aluminum achieves exceptional Qās at
cryogenic temperatures
Even aluminum achieves exceptional Qās at
cryogenic temperatures
Mechanism for Q increase with decreasing temperature thought to be linked to less hysteretic motion of material defects
less energy loss per cycle
Mechanism for Q increase with decreasing temperature thought to be linked to less hysteretic motion of material defects
less energy loss per cycle
[from Braginsky, Systems With
Small Dissipation]
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 38
Output
Input
Input
Output
Support Beams
Wine Glass Disk Resonator
R = 32 Ī¼m
Anchor
Anchor
Resonator DataR = 32 Ī¼m, h = 3 Ī¼md = 80 nm, Vp = 3 V
Resonator DataR = 32 Ī¼m, h = 3 Ī¼md = 80 nm, Vp = 3 V
-100
-80
-60
-40
61.325 61.375 61.425
fo = 61.37 MHzQ = 145,780
Frequency [MHz]
Unm
atch
ed T
rans
mis
sion
[dB
]
Polysilicon Wine-Glass Disk Resonator
[Y.-W. Lin, Nguyen, JSSC Dec. 04]
Compound Mode (2,1)
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 39
-100-98-96-94-92-90-88-86-84
1507.4 1507.6 1507.8 1508 1508.2
1.51-GHz, Q=11,555 NanocrystallineDiamond Disk Ī¼Mechanical Resonator
ā¢ Impedance-mismatched stem for reduced anchor dissipation
ā¢Operated in the 2nd radial-contour modeā¢Q ~11,555 (vacuum); Q ~10,100 (air)ā¢ Below: 20 Ī¼m diameter disk
PolysiliconElectrode R
Polysilicon Stem(Impedance Mismatched
to Diamond Disk)
GroundPlane
CVD DiamondĪ¼Mechanical Disk
Resonator Frequency [MHz]
Mix
ed A
mpl
itude
[dB
]
Design/Performance:R=10Ī¼m, t=2.2Ī¼m, d=800Ć , VP=7Vfo=1.51 GHz (2nd mode), Q=11,555
fo = 1.51 GHzQ = 11,555 (vac)Q = 10,100 (air)
[Wang, Butler, Nguyen MEMSā04]
Q = 10,100 (air)
8
EE 247B/ME 218: Introduction to MEMS DesignLecture 13m1: Mechanics of Materials
CTN 3/4/14
Copyright Ā© 2014 Regents of the University of California
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 40
Disk Resonator Loss Mechanisms
Disk Stem
Nodal Axis
Strain Energy Flow No motion along
the nodal axis, but motion along the finite width
of the stem
No motion along the nodal axis,
but motion along the finite width
of the stem
Stem HeightĪ»/4 helps
reduce loss, but not perfect
Ī»/4 helps reduce loss,
but not perfect
Substrate Loss Thru Anchors
Substrate Loss Thru Anchors
Gas Damping
Gas Damping
Substrate
Hysteretic Motion of
Defect
Hysteretic Motion of
Defect
e-
Electronic Carrier Drift Loss
Electronic Carrier Drift Loss
(Not Dominant in Vacuum)
(Dwarfed By Substrate Loss)
(Dwarfed By Substrate Loss)
(Dominates)
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 41
MEMS Material Property Test Structures
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 42
Stress Measurement Via Wafer Curvature
ā¢ Compressively stressed film ābends a wafer into a convex shape
ā¢ Tensile stressed film ā bends a wafer into a concave shape
ā¢ Can optically measure the deflection of the wafer before and after the film is deposited
ā¢ Determine the radius of curvature R, then apply:
RthE
6
2ā²=Ļ
Ļ = film stress [Pa]Eā² = E/(1-Ī½) = biaxial elastic modulus [Pa]h = substrate thickness [m]t = film thicknessR = substrate radius of curvature [m]
Si-substrate
Laser
Detector
MirrorxScan the
mirror Īø
Īø
xSlope = 1/R
h
t
R
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 43
MEMS Stress Test Structure
ā¢ Simple Approach: use a clamped-clamped beam
Compressive stress causes bucklingArrays with increasing length are used to determine the critical buckling load, where
Limitation: Only compressive stress is measurable
2
22
3 LEh
criticalĻĻ ā=
E = Youngās modulus [Pa]I = (1/12)Wh3 = moment of inertiaL, W, h indicated in the figure
L
W
h = thickness
9
EE 247B/ME 218: Introduction to MEMS DesignLecture 13m1: Mechanics of Materials
CTN 3/4/14
Copyright Ā© 2014 Regents of the University of California
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 44
More Effective Stress Diagnostic
ā¢ Single structure measures both compressive and tensile stress
ā¢ Expansion or contraction of test beam ā deflection of pointer
ā¢ Vernier movement indicates type and magnitude of stress
Expansion ā Compression
Contraction ā Tensile
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 45
Output
Input
Input
Output
Support Beams
Wine Glass Disk Resonator
R = 32 Ī¼m
Anchor
Anchor
Resonator DataR = 32 Ī¼m, h = 3 Ī¼md = 80 nm, Vp = 3 V
Resonator DataR = 32 Ī¼m, h = 3 Ī¼md = 80 nm, Vp = 3 V
-100
-80
-60
-40
61.325 61.375 61.425
fo = 61.37 MHzQ = 145,780
Frequency [MHz]
Unm
atch
ed T
rans
mis
sion
[dB
]
Q Measurement Using Resonators
[Y.-W. Lin, Nguyen, JSSC Dec. 04]
Compound Mode (2,1)
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 46
Folded-Beam Comb-Driven Resonator
ā¢ Issue w/ Wine-Glass Resonator: non-standard fab processā¢ Solution: use a folded-beam comb-drive resonator
8.3 Hz
3.8500,342
=Q
fo=342.5kHzQ=41,000
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 47
Comb-Drive Resonator in Action
ā¢ Below: fully integrated micromechanical resonator oscillator using a MEMS-last integration approach
10
EE 247B/ME 218: Introduction to MEMS DesignLecture 13m1: Mechanics of Materials
CTN 3/4/14
Copyright Ā© 2014 Regents of the University of California
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 48
Folded-Beam Comb-Drive Resonator
ā¢ Issue w/ Wine-Glass Resonator: non-standard fab processā¢ Solution: use a folded-beam comb-drive resonator
8.3 Hz
3.8500,342
=Q
fo=342.5kHzQ=41,000
EE C245: Introduction to MEMS Design LecM 7 C. Nguyen 9/28/07 49
Measurement of Youngās Modulus
ā¢ Use micromechanical resonatorsResonance frequency depends on EFor a folded-beam resonator: 213)(4
ā„ā„ā¦
ā¤
ā¢ā¢ā£
ā”=
eqo M
LWEhfResonance Frequency =
LW
h = thickness
Youngās modulus
Equivalent mass
ā¢ Extract E from measured frequency fo
ā¢Measure fo for several resonators with varying dimensions
ā¢ Use multiple data points to remove uncertainty in some parameters