VTT MICROELECTRONICS3D RADIATION DETECTORS

ORSAY SEPTEMBER 2003

VTT CENTRE FOR MICROELECTRONICS

27.02.2003 / S. Eränen 2

STATUS AS PERFORMER OF RESEARCH AND DEVELOPMENT WORK

Basicresearch

Appliedresearch

Developmentwork

VTT

Industry

Universities

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Staff breakdown by location:

Oulu 323Outokumpu 37Jyväskylä 128Tampere 332Lappeenranta 12Espoo 2 159Others 21

Total 3 012

Units:

VTT ElectronicsVTT Information TechnologyVTT Industrial SystemsVTT ProcessesVTT BiotechnologyVTT Building and Transport

VTT Information ServiceVTT Corporate Management and Services

Staff: 3 012

Turnover: 214 M€

• Basic govern. funding to researchon VTT’s own initiative 34 M€

• Jointly funded projects 92 M€

• Commercial activities 88 M€

VTT IN BRIEFwww.vtt.fi

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Income from commercial activities

Income from jointly funded activities

Basic governmental funding to jointly funded activities

Basic governmental funding to research on VTT’s own initiative

VTT’S TURNOVER BY TYPE OF INCOME AND FUNDING

0

50

100

150

200

250

1996 1997 1998 1999 2000 2001

41%

27%

16%

16%

40%

30%

14%

16%

39%

32%

16%

13%

39%

32%

17%

12%

40%

28%

18%

14%

40%

25%

19%

16%

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DETECTOR ACTIVITIES IN 2003

1. Products + extras

2. New detector types for imaging & xrf

3. Device and process physics for planar detectors

4. 3D-detectors

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3D

3D PLANAR (strips &pixels)

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DETECTOR ACTIVITIES IN 2003

3D

WHY

• small voltage

• high collection speed

• edgeless

• radiation hardness

• Spatial resolution

• Large area CZ-wafers

APPLICATIONS: hep & imaging

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DETECTOR ACTIVITIES IN 2003

3D

PROCESSING

1. Normal processing steps applied for the planar detectors

2. Deep hole etching

• ICP-silicon etching (so called Bosch-process): established silicon process

3. Hole filling / planarization (polished surface, wafer handling & processing)

• LPCVD polysilicon or so-called epitaxial polysilicon (epi-poly)

• both processes can be grown as non-doped or in-situ doped (n or p-type)

• minimum resistivity: 1 mcm-range

• growth rate: LPCVD 1 m/hour (thick layers require sequential runs), epi-poly 1 m/min

• CMP ?

4. Dicing

• important especially for so-called edgeless detectors

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DETECTOR ACTIVITIES IN 2003 DETECTOR ACTIVITIES IN 2003

3DPROCESSING EXAMPLES: epi-poly

Problem: void formation

VTT CENTRE FOR MICROELECTRONICS

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DETECTOR ACTIVITIES IN 2003

3DPROCESSING: dicing

Problem: thickness of damage layer

substrate

backsides doping

oxide

edge doping

metal

Active strip doping

DICING BLADE:

• width 20 m

• position accuracy ± 2 m

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DETECTOR ACTIVITIES IN 2003

3DSIMULATIONS

2D

• Silvaco tools

• mixed mode

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DETECTOR ACTIVITIES IN 2003

3D3DSIMULATIONS: ISE

VTT CENTRE FOR MICROELECTRONICS

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DETECTOR ACTIVITIES IN 2003

3D3D SIMULATIONS: ISE

VTT CENTRE FOR MICROELECTRONICS

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Micro packaging

• Bump bonding of detector modules for Alice, LHCb, Medipix2

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Contacts

• Micro packaging: Jorma Salmi, + 358 9 456 6639, jorma.salmi@vtt.fi

• IC processes: Hannu Ronkainen, + 358 9 456 6660, hannu.ronkainen@vtt.fi

• IC design: Markku Åberg, + 358 9 456 6619, markku.aberg@vtt.fi

• MEMS: Hannu Kattelus, + 358 9 456 6319, hannu.kattelus@vtt.fi

• SOI-wafers: Kimmo Henttinen, + 358 9 456 6310, kimmo.henttinen@tt.fi

• Silicon detectors: Simo Eränen, + 358 9 456 6661, simo.eranen@vtt.fi