wbfbp-02c-a plastic-encapsulate diodes esd.pdf · polytronics confidential. transmission line pulse...

WBFBP-02C-A

WBFBP-02C-A Plastic-Encapsulate Diodes

Uni-direction ESD Protection Diode DESCRIPTION

Designed to protect voltage sensitive electronic components from ESD and other

transients. Excellent clamping capability, low leakage, low capacitance, and fast

response time provide best in class protection on designs that are exposed to ESD.

The combination of small size, low capacitance, and high level of ESD protection

makes them a flexible solution for applications such as HDMI, Display Port TM, and

MDDI interfaces. It is designed to replace multiplayer varistors (MLV) in consumer

equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc.

FEATURES

Uni-directional ESD protection of one line

Low capacitance: 0.5pF(Typ.)

Low reverse stand−off voltage: 5V

Low reverse clamping voltage

Low leakage current

Excellent package:1.0mm×0.6mm×0.5mm

Fast response time

JESD22-A114-B ESD Rating of class 3B per human

body model

IEC 61000-4-2 Level 4 ESD protection

APPLICATIONS

Computers and peripherals

High speed data lines

Audio and video equipment

Cellular handsets and accessories

Portable electronics

USB interfaces

Other electronics equipments communi-

cation systems MARKING

YE = Device code

The marking bar indicates the cathode

Front side

PA2A9110105

新竹市科學工業園區工業東四路 24-1 號 No. 24-1 Industry E. Rd. IV, Hsinchu Science Park, Hsinchu 300, Taiwan.

TEL: +886-3-5643931 FAX: +886-3-5644624 http://www.pttc.com.tw

Page: 1 of 6 2015/02/03 Revision: A

POLYTRONICS CONFIDENTIAL

MAXIMUM RATINGS ( Ta=25 unless otherwise noted )

Parameter Symbol Limit Unit

±15 IEC 61000-4-2 ESD Voltage Air Model

Contact Model ±15

JESD22-A114-B ESD Voltage Per Human Body Model ±12

ESD Voltage Machine Model

VESD(1)

±0.4

kV

Peak Pulse Power PPP(2) 105 W

Peak Pulse Current IPP(2) 7 A

Lead Solder Temperature − Maximum (10 Second Duration) TL 260

Junction Temperature Tj 150

Storage Temperature Range Tstg -55 ~ +150

(1).Device stressed with ten non-repetitive ESD pulses.

(2).Non-repetitive current pulse 8/20µs exponential decay waveform according to IEC61000-4-5.

ESD standards compliance

IEC61000-4-2 Standard JESD22-A114-B Standard

Contact Discharge Air Discharge

Level Test Voltage kV Level Test Voltage kV

1 2 1 2

2 4 2 4

3 6 3 8

4 8 4 15

ESD Class Human Body Discharge V

0 0～249

1A 1B 1C

250～499 500～999

1000～1999

2 2000～3999 3A 3B

4000～7999 8000～15999

ESD pulse waveform according to IEC61000-4-2

8/20μs pulse waveform according to IEC 61000-4-5

PA2A9110105





ELECTRICAL PARAMETER

V-I characteristics for a uni-directional TVS

ELECTRICAL CHARACTERISTICS(Ta=25 unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit

Reverse stand off voltage VRWM（1） 5 V

Reverse leakage current IR VRWM=5V 1 μA

Breakdown voltage V(BR) IT=1mA 5.4 9.4 V

Clamping voltage VC（2） IPP=1A 10 V

Junction capacitance CJ VR=0V,f=1MHz 0.5 0.9 pF

(1).Other voltages available upon request.

(2).Non-repetitive current pulse 8/20μs exponential decay waveform according to IEC61000-4-5

Symbol Parameter

VC Clamping Voltage @ IPP

IPP Peak Pulse Current

VBR Breakdown Voltage @ IT

IT Test Current

IR Reverse Leakage Current @ VRWM

VRWM Reverse Standoff Voltage

VF Forward Voltage@ IF

IF Forward Current

PA2A9110105





TYPICAL CHARACTERISTICS

400 500 600 700 800 900 1000 11000.1

1

10

100

0.0 0.5 1.0 1.5 2.0 2.5 3.00.0

0.2

0.4

0.6

0.8

1.0

0 2 4 6 8 100

20

40

60

80

100

0 1 2 3 4 5 6 7 88

9

10

11

12

13

14

15

Pulsed

Forward Characteristics

FORWARD VOLTAGE VF (mV)

FO

RW

AR

D C

UR

RE

NT

I F

(

mA

)

T a=2

5T a=1

00

Ta=25

f=1MHz

Capacitance Characteristics

REVERSE VOLTAGE VR (V)

JUN

CT

ION

CA

PA

CIT

AN

CE

CJ

(pF

)

T a=2

5

T a=1

00

Reverse Characteristics


RE

VE

RS

E C

UR

RE

NT

I R

(

mA

)

Pulsed

CLA

MP

ING

VO

LTA

GE

VC(V

)

REVERSE PEAK PULSE CURRENT IPP

(A)

Ta=25

tp=8/20us

VC ---- IPP

PA2A9110105





PACKAGE OUTLINE AND PAD LAYOUT INFORMATION

-A WBFBP-02C

WBFBP-02C-A

Min. Max. Min. Max.A 0.450 0.550 0.018 0.022A1 0.010 0.090 0.000 0.004D 0.950 1.050 0.037 0.041E 0.550 0.650 0.022 0.026

D1E1 0.400 0.500 0.016 0.020be 0.580 0.680 0.023 0.027e1L1L2 0.270 0.370 0.011 0.015

0.050REF. 0.002REF.

0.420REF. 0.017REF.

0.360REF. 0.014REF.

SymbolDimensions In Millimeters Dimensions In Inches

0.015REF.0.390REF.

PA2A9110105





TAPE AND REEL INFORMATION

PA2A9110105





APPLICATIONS

Cellular Handsets and Accessories

High Speed I/O Lines

10/100/1000 Ethernet Protection

Peripherals

Personal Digital Assistants (PDA)

Servers, Notebook, and Desktop PC

IEC COMPATIBILITY

IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact)

IEC61000-4-4 (EFT) 40A (5/50ηs)

FEATURES

250 Watts Peak Pulse Power per Line (tp=8/20µs)

Protects One I/O Line (Bidirection)

Low Clamping Voltage

Working Voltages : 3.3V

Low Leakage Current

MECHANICAL CHARACTERISTICS

DFN1410P2 Package

Molding Compound Flammability Rating : UL 94V-O

Weight 1.5 Millgrams (Approximate)

Quantity Per Reel : 3,000pcs

Reel Size : 7 inch

Lead Finish : Lead Free

DFN1410P2

PIN CONFIGURATION

LOW CAPACITANCE

TVS DIODE ARRAYPA2F7225103





(V) (V) @1A (µA) (pF)

(max.) (min.) (mA) (max.) (max.) (@A) (max.) (max.)

Note 1 -- IR : <0.5uA, TC = 25'C, IR : <1.0uA, TC = 125'C

Note 2 -- 0.4pF (max.), VR=2.5V, f=1MHz.

13

CT

(Note 2)

VC

0.5 0.4

PART NUMBER

VB

R3 3.3 3.5 20

Lead Soldering Temperature

260 (10 sec.)

-55 ~ 150TJ

SYMBOL VALUE

Storage Temperature Range

Operating Temperature Range

TL

-55 ~ 150

MAXIMUM RATINGS (@ 25 Unless Otherwise Specified)

DEVICE CHARACTERISTICS

PPP

UNITS

Peak Pulse Power (tp=8/20µs waveform) Watts

PARAMETER

250

IR

(Note 1)DEVICE

MARKING

6

ELECTRICAL CHARACTERISTICS PER LINE (@ 25 Unless Otherwise Specified)

VC

TSTG

ITVRWM

1




PA2F7225103


DFN1410P2 PACKAGE OUTLINE & DIMENSIONS





APPLICATIONS

Portable Electronics

USB OTG interfaces

Video Graphics Cards

Notebooks, Desktops, and Servers

Portable Instrumentation

Industrial Controls

Peripherals

IEC COMPATIBILITY


IEC61000-4-4 (EFT) 40A (5/50ηs)

IEC61000-4-5 (Lightning) 10A (8/20µs)

FEATURES


Protects Four High Speed Lines

Low Clamping Voltage

RoHS Compliant


DFN2510P10 (2.5x1.0mm) Package




Reel Size : 7 inch


DFN2510P10

PIN CONFIGURATION

ULTRA LOW CAPACITANCE

TVS DIODE ARRAY

Configuration per Line

PAN10115103




HDMI 2.0 and HDMI 1.4


(V) (V) @1A (µA) (pF)

(max.) (min.) (mA) (max.) (max.) (@A) (max.) (typ.)

CTIT

VB

PART NUMBERDEVICE

MARKING

VRWM

PPP

-55 ~ 150

0.5

VC

(8/20us)

6.5 15

150

TL 260 (10 sec.)

PARAMETER

Watts

Storage Temperature Range TSTG -55 ~ 150

TJOperating Temperature Range


VC (8/20us)

IR

304U 10 13.3 4.0 1



UNITS

SYMBOL VALUE

Peak Pulse Power (tp=8/20µs waveform)


PAN10115103





Transmission Line Pulse (TLP) is a measurement technique used in the Electrostatic Discharge (ESD) arena

to characterize performance attributes of devices under ESD stresses. TLP is able to obtain current versus

voltage (I−V) curves in which each data point is obtained with a 100 ns long pulse, with currents up to 40 A.

TLP was first used in the ESD field to study human body model (HBM) in integrated circuits, but it is an

equally valid tool in the field of system level ESD. The applicability of TLP to system level ESD is illustrated

in Figure 1, which compares an 8 kV IEC 61000−4−2 current waveform with TLP current pulses of 8 and 16 A.

The current levels and time duration for the pulses are similar and the initial rise time for the TLP pulse is

comparable to the rise time of the IEC 61000−4−2’s initial current spike. This application note will give a

basic introduction to TLP measurements and explain the datasheet parameters extracted from TLP for

Yeashin Technology’s protection products.

Comparison of a Current

Waveform of IEC 61000−4−2

with TLP Pulses at 8 and 16 A.

The IEC 61000−4−2 ESD

waveforms is true to the

Standard and is shown here

as captured on an oscilloscope.

The points A, B, and C show

the points on the waveforms

specified in IEC 61000−4−2.

4A

(tp=100ns)

8A

(tp=100ns)

Transmission Line Pulse (TLP)

5.5V(typ.) 8.5V(typ.)PAN10115103





DFN2510P10 PACKAGE OUTLINE & DIMENSIONS





DFNWB2.5×1.0-10L-B Plastic-Encapsulate Diodes

PAN10150005 Uni-direction ESD Protection Array

DESCRIPTION







equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc. FEATURES

Uni-directional ESD protection of four lines

Low capacitance: 0.8pF



Low leakage current


Fast response time


body model


APPLICATIONS




Mobile phone

High Definition Multi-Media Interface (HDMI)

Digital Visual Interface (DVI)

LVDS

PAD

Other electronics equipments

Communication systems MARKING

AEB = Device code

Solid dot=Pin1 indicator

Front side Backside

DFNWB2.5×1.0-10L-B



Page: 1 of 6 2010/02/03 Revision: B


PAN10150005 MAXIMUM RATINGS ( Ta=25 unless otherwise noted )


±25 IEC 61000-4-2 ESD Voltage Air Model

Contact Model ±25


ESD Voltage Machine Model

VESD(1)

±0.4

kV


Peak Pulse Current IPP(2) 2.5 A




(1).Device stressed with ten non-repetitive ESD pulses,per channel(I/O to GND ).






1 2 1 2

2 4 2 4

3 6 3 8

4 8 4 15


0 0～249

1A 1B 1C

250～499 500～999

1000～1999

2 2000～3999 3A 3B

4000～7999 8000～15999











Per channel(I/O to GND unless otherwise specified)


Breakdown voltage V(BR) IT=1mA 6 V


Forward voltage VF IF=10mA 0.4 1.5 V


VR=0V,f=1MHz 0.8 pF Junction capacitance CJ

VR=0V,f=1MHz, I/O to I/O 0.4 pF



Symbol Parameter VC Clamping Voltage @ IPP



IT Test Current




IF Forward Current

PAN10150005






0.5 1.0 1.5 2.0 2.55

10

15

20

25

0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.10.1

1

10

0 2 4 6 8 10 120

20

40

60

80

100

0 1 2 3 4 50.0

0.2

0.4

0.6

0.8

1.0

I/O Pin to Ground

Ta=25

tp=8/20us

CLA

MP

ING

VO

LTA

GE

VC(V

)

REVERSE PEAK PULSE CURRENT IPP

(A)

VC ---- IPP

Pulsed



FO

RW

AR

D C

UR

RE

NT

I F

(

mA

)

T a=2

5

T a=1

00

30

Pulsed

T a=2

5

T a=1

00



RE

VE

RS

E C

UR

RE

NT

I R

(

mA

)

Ta=25

f=1MHz

I/O Pin to I/O Pin

I/O Pin to Ground


JUN

CT

ION

CA

PA

CIT

AN

CE

CJ

(pF

)


PAN10150005






Min. Max. Min. Max.A 0.450/0.550 0.550/0.650 0.018/0.022 0.022/0.026A1 0.000 0.050 0.000 0.002A3D 2.450 2.550 0.096 0.100E 0.950 1.050 0.037 0.041

D1 0.350 0.450 0.014 0.018E1 0.350 0.450 0.014 0.018k －－－－b 0.150 0.250 0.006 0.010eL 0.350 0.450 0.014 0.018

Symbol Dimensions In Millimeters Dimensions In Inches

0.500TYP. 0.020TYP.

0.152REF. 0.006REF.

PAN10150005






PAN10150005





SOT-563

SOT-563 Plastic-Encapsulate Diodes

Uni-direction ESD Protection Diode

DESCRIPTION





makes them a flexible solution for applications such as USB3.0 power & data line,

Video line, and WAN/LAN equipment. It is designed to replace multiplayer varistors

(MLV) in consumer equipments applications such as mobile phone, notebook, PAD,

STB, LCD TV etc.

FEATURES

Uni-directional ESD protection of two lines

Low capacitance: 0.8pF(Max)



Low leakage current

Excellent package

Fast response time


body model


APPLICATIONS

USB3.0 power & data line protection

WLAN/LAN equipment

Mobile phone

Video line protection

Microcontroller input Protection

ISDN S/T Interface


Communication systems MARKING

U5N2 = Device code

Front side

PAT56109105





PAT56109105



IEC 61000-4-2 ESD Voltage(I/O to GND & VCC to GND) Air Model

Contact ModelVESD

(1)

±25

kV ±25

JESD22-A114-B ESD Voltage(I/O to GND & VCC to GND) Per Human Body Model ±16

ESD Voltage(I/O to GND & VCC to GND) Machine Model ±0.4


Peak Pulse Current IPP(2) 3.5 A










1 2 1 2

2 4 2 4

3 6 3 8

4 8 4 15


0 0～249

1A 1B 1C

250～499 500～999

1000～1999

2 2000～3999 3A 3B

4000～7999 8000～15999







PAT56109105 ELECTRICAL PARAMETER




Per channel(I/O to GND unless otherwise specified)


Breakdown voltage V(BR) IT=1mA 6 10 V

IT=1mA VCC to GND 5 12 V

Reverse leakage current IR VRWM=5V

(I/O to GND & VCC to GND) 1 μA

Forward voltage VF IF=10mA

(I/O to GND & VCC to GND) 0.4 1.5 V

Clamping voltage VC（2）

IPP=1A

(I/O to GND & VCC to GND) 13 V

IPP=3.5A

(I/O to GND & VCC to GND) 25 V

Junction capacitance CJ VR=0V,f=1MHz 0.8 pF

VR=0V,f=1MHz, I/O to I/O 0.4 pF



Symbol Parameter




IT Test Current




IF Forward Current






0.2 0.4 0.6 0.8 1.0 1.20.1

1

10

100

0 1 2 3 4 50.0

0.2

0.4

0.6

0.8

1.0

1.0 1.5 2.0 2.5 3.0 3.50

6

12

18

24

30

0 2 4 6 8 10 120

20

40

60

80

100

0.2 0.4 0.6 0.8 1.0 1.20.1

1

10

100

0 2 4 6 8 10 120

20

40

60

80

100

PulsedI/O Pin to Ground

FORWARD VOLTAGE VF (V)

FOR

WA

RD

CU

RR

EN

T

I F (m

A)

Ta=25

Ta=100

Ta=25f=1MHz

I/O Pin to I/O Pin

I/O Pin to Ground


JU

NC

TIO

N C

APAC

ITAN

CE

CJ

(pF)


VCC to Ground

I/O Pin to Ground

Ta=25tp=8/20us

CLA

MPI

NG

VO

LTAG

E V

C

(V)

REVERSE PEAK PULSE CURRENT IPP (A)

VC —— IPP

Forward CharacteristicsForward Characteristics

PulsedI/O Pin to Ground

Ta=25

Ta=100



REV

ERSE

CU

RR

ENT

IR

(mA)

PulsedVCC to Ground

FOR

WA

RD

CU

RR

EN

T

I F (m

A)


Ta=25

Ta=100

PulsedVCC to Ground


REV

ERSE

CU

RR

ENT

IR

(mA)


Ta=25

Ta=100

PAT56109105






PAT56109105





SOD-323

SOD-323 Plastic-Encapsulate Diodes

Bi-direction ESD Protection Diode

DESCRIPTION








FEATURES

Bi-directional ESD protection of one line

Low capacitance: 2pF



Low leakage current


Fast response time


body model


APPLICATIONS

Cellular phones


Handheld-Wireless Systems

PDAs

Ethernet – 10/100/1000 Base T


USB Interface


cation systems

MARKING

PB2D3227103




AC = Device code

Front side

AC









1 2 1 2

2 4 2 4

3 6 3 8

4 8 4 15


0 0～249

1A 1B 1C

250～499 500～999

1000～1999

2 2000～3999 3A 3B

4000～7999 8000～15999



PB2D3227103





IEC 61000-4-2 ESD Voltage Air Model

Contact ModelVESD

(1)

±25

kV ±25


ESD Voltage Machine Model ±0.4








V-I characteristics for a Bi-directional TVS




Symbol Parameter




IT Test Current



PB2D3227103









Junction capacitance CJ VR=0V,f=1MHz 2 pF



PB2D3227103




-8 -6 -4 -2 0 2 4 6 8-100

-80

-60

-40

-20

0

20

40

60

80

100

0 3 6 9 12 15 180

3

6

9

12

15

18Reverse Characteristics


REV

ERSE

CU

RR

ENT

IR

(mA)

Ta=25

Ta=100

Pulsed

CLA

MPI

NG

VO

LTAG

E V

C(V

)

REVERSE PEAK PULSE CURRENT IPP(A)

Ta=25tp=8/20us

VC —— IPP

0.0 0.5 1.0 1.5 2.0 2.5 3.01.0

1.2

1.4

1.6

1.8

2.0Ta=25f=1MHz



CAP

ACIT

ANC

E BE

TWEE

N T

ERM

INAL

SC

T (p

F)



Min Max Min MaxA 1.000 0.039

A1 0.000 0.100 0.000 0.004A2 0.800 0.900 0.031 0.035b 0.250 0.350 0.010 0.014c 0.080 0.150 0.003 0.006D 1.200 1.400 0.047 0.055E 1.600 1.800 0.063 0.071

E1 2.500 2.700 0.098 0.106L

L1 0.250 0.400 0.010 0.016θ 0° 8° 0° 8°

0.475 REF 0.019 REF


PB2D3227103






PB2D3227103





SOD-323



DESCRIPTION








FEATURES


Low capacitance: 2pF



Low leakage current


Fast response time


body model


APPLICATIONS

Cellular phones


Handheld-Wireless Systems

PDAs

Ethernet – 10/100/1000 Base T


USB Interface


cation systems

MARKING

BV5 = Device code

Front side

PB2D3275105








Contact ModelVESD

(1)

±25

kV ±25














1 2 1 2

2 4 2 4

3 6 3 8

4 8 4 15


0 0～249

1A 1B 1C

250～499 500～999

1000～1999

2 2000～3999 3A 3B

4000～7999 8000～15999



PB2D3275105
















Symbol Parameter




IT Test Current



PB2D3275105






0 1 2 3 4 50.4

0.8

1.2

1.6

2.0

-9 -6 -3 0 3 6 9-100

-75

-50

-25

0

25

50

75

100

0 5 10 15 20 25 30 350

10

20

30

40


JUN

CTI

ON

CA

PA

CIT

AN

CE

CJ

(pF)

Ta=25f=1MHz


Pulsed

REV

ERSE

CU

RR

ENT

IR

(mA)


T a=2

5T a

=100

Reverse Characteristics VC —— IPP

Ta=25tp=8/20us

CLA

MPI

NG

VO

LTAG

E V

C(V

)


PB2D3275105






Min Max Min MaxA 1.000 0.039

A1 0.000 0.100 0.000 0.004A2 0.800 0.900 0.031 0.035b 0.250 0.350 0.010 0.014c 0.080 0.150 0.003 0.006D 1.200 1.400 0.047 0.055E 1.600 1.800 0.063 0.071

E1 2.500 2.700 0.098 0.106L

L1 0.250 0.400 0.010 0.016θ 0° 8° 0° 8°

0.475 REF 0.019 REF


PB2D3275105






PB2D3275105





WBFBP-02C

WBFBP-02C Plastic-Encapsulate Diodes


DESCRIPTION








FEATURES


Low capacitance: 3pF(Typ.)



Low leakage current


Fast response time


body model


APPLICATIONS





Subscriber identity module(SIM) card protection


FireWire


cation systems

MARKING

HF = Device code

Front side

PB2F9252005



2010/02/03 Revision: B Page: of 1 6





Contact ModelVESD

(1)

±15

kV ±15














1 2 1 2

2 4 2 4

3 6 3 8

4 8 4 15


0 0～249

1A 1B 1C

250～499 500～999

1000～1999

2 2000～3999 3A 3B

4000～7999 8000～15999













Breakdown voltage V(BR) IT=1mA 5.6 8 V





Symbol Parameter




IT Test Current








0 1 2 3 4 50

1

2

3

4

-9 -6 -3 0 3 6 9-100

-75

-50

-25

0

25

50

75

100

1.0 1.5 2.0 2.5 3.0 3.5 4.03

6

9

12

15

REVERSE VOLTAGE VR (V)JU

NC

TIO

N C

AP

AC

ITA

NC

EC

J (p

F)

Ta=25f=1MHz


REV

ERSE

CU

RR

ENT

IR

(mA)


Ta=25

Ta=100


Pulsed

VC ---- IPP

Ta=25tp=8/20us

CLA

MPI

NG

VO

LTAG

E V

C(V

)







Min. Max. Min. Max.

A 0.450 0.550 0.018 0.022

A1 0.010 0.100 0.000 0.004D 0.950 1.050 0.037 0.041E 0.550 0.650 0.022 0.026D1E1b 0.270 0.370 0.011 0.015b1 0.250 0.350 0.010 0.014e 0.555 0.655 0.022 0.026e1L 0.250 0.350 0.010 0.014L1L2 0.370 0.470 0.015 0.019L3 0.040REF. 0.002REF.

0.420REF. 0.017REF.

0.030REF. 0.001REF.

0.230REF. 0.009REF.


0.019REF.0.470REF.








Page: of 2010/02/03 Revision: B 6 6


APPLICATIONS

10/100/1000 Ethernet

WAN/LAN Equipment

Test & Measurement Equipment

Switching Systems

Instrumentation

Audio/Video Inputs

IEC COMPATIBILITY


IEC61000-4-4 (EFT) 40A (5/50ηs)


FEATURES


Protects two line pairs (four lines)

Low capacitance

RoHS Compliant


JEDEC SOP-08 Package


Weight 70 Millgrams (Approximate)


Reel Size : 7 inch


SOP-08

PIN CONFIGURATION

LOW CAPACITANCE

TVS DIODE ARRAYPBS08140128





(V) (V) @5A (µA) (pF)


PPP




TL 260 (10 sec.)


PARAMETER

400

SYMBOL UNITS


VALUE

SLVU

2.8-4

Watts

TJ -55 ~ 150

PART NUMBERDEVICE

MARKING


VC

Storage Temperature Range -55 ~ 150

VRWM

TSTG

IR CTVCIT

VB

24 0.5 22.8 3.0 1 7 20PBS08140128





* SOLDERING FOOTPRINT

SOP-08 PACKAGE OUTLINE & DIMENSIONS





APPLICATIONS

USB Power & Data Line Protection

Ethernet 10BaseT

I2C Bus Protection

Video Line Protection

T1/E1 secondary IC Side Protection

Microcontroller Input Protection

ISDN S/T Interface

WAN/LAN Equipment

IEC COMPATIBILITY


IEC61000-4-4 (EFT) 40A (5/50ηs)


FEATURES


Protects two I/O lines

Low clamping voltage

Working voltages : 5V

Low leakage current


SOT-143 Package




Reel Size : 7 inch


LOW CAPACITANCE

TVS DIODE ARRAY

SOT-143

PIN CONFIGURATION

PBT14110105





(V) (V) @1A (µA) (pF)

(max.) (min.) (mA) (max.) (max.) (@A) (max.) (max.)

VF : <1.0V@1mA.

I/O to GND : <1.2pF@0V, f=1MHz, I/O to I/O : < 0.7pF@0V, f=1MHz.

1.2239.81


IR CT

1

Watts

PARAMETER


VC



SYMBOL VALUE

PPP 100

UNITS


TJ


-55 ~ 150

VB

PART NUMBERDEVICE

MARKING

VRWM

3

VCIT

TL 260 (10 sec.)


BSL3 5 6PBT14110105






SOT-143 PACKAGE OUTLINE & DIMENSIONS





APPLICATIONS

USB 2.0 Power and Data Line Protection

Video Graphics Cards

Monitors and Flat Panel Displays

Digit Video Interface (DVI)

10/100/1000 Ethernet

Notebook Computers

SIM Ports

ATM Interfaces

IEC COMPATIBILITY


IEC61000-4-4 (EFT) 40A (5/50ηs)


FEATURES


Protects four I/O lines


Working voltages : 5V

Low leakage current


JEDEC SOT-26 Package




Reel Size : 7 inch


LOW CAPACITANCE

TVS DIODE ARRAY

SOT-26

PIN CONFIGURATION

PBT26110105





(V) (V) @1A (µA) (pF)



VC




VB

-55 ~ 150

260 (10 sec.)

PARAMETER SYMBOL VALUE UNITS

IR CT

1 3159.81 4



Peak Pulse Power (tp=8/20µs waveform) WattsPPP 100

PART NUMBERDEVICE

MARKING

VRWM VCIT

TL

TJ

PBT26110105 V05 5.0 6.0




OR B05B


PD2A9240005





SOD-523



DESCRIPTION


transients. Excellent clamping capability, low leakage, and fast response time provide

best in class protection on designs that are exposed to ESD.

The combination of small size, high level of ESD protection makes them a flexible

solution for applications such as Digital cameras,cellular phones, and MP3 Players. It

is designed to replace multiplayer varistors (MLV) in consumer equipments

applications such as mobile phone, notebook, PAD, STB, LCD TV etc.

FEATURES


Reverse stand−off voltage: 5V


Low leakage current


Fast response time


body model


APPLICATIONS


Digital Cameras




Mp3 Players



B5 = Device code

Front side

PD2D5211105








Contact ModelVESD

(1)

±25

kV ±25














1 2 1 2

2 4 2 4

3 6 3 8

4 8 4 15


0 0～249

1A 1B 1C

250～499 500～999

1000～1999

2 2000～3999 3A 3B

4000～7999 8000～15999



PD2D5211105
















Symbol Parameter




IT Test Current



PD2D5211105






1 2 3 4 5 6 7 84

6

8

10

12

14

16

0 1 2 3 4 5 610

15

20

25

30

-8 -6 -4 -2 0 2 4 6 8 10-100

-75

-50

-25

0

25

50

75

100

Ta=25tp=8/20us

CLA

MPI

NG

VO

LTAG

E V

C

(V)

VC —— IPP



JUN

CTI

ON

CA

PA

CIT

AN

CE

CJ

(pF)

Ta=25f=1MHz


REV

ERSE

CU

RR

ENT

IR

(mA)


T a=25

T a=10

0

Pulsed


PD2D5211105






Min Max Min MaxA 0.510 0.770 0.020 0.031

A1 0.500 0.700 0.020 0.028b 0.250 0.350 0.010 0.014c 0.080 0.150 0.003 0.006D 0.750 0.850 0.030 0.033E 1.100 1.300 0.043 0.051

E1 1.500 1.700 0.059 0.067E2L 0.010 0.070 0.001 0.003θ 7° REF


7° REF

0.200 REF 0.008 REF

PD2D5211105






PD2D5211105





PD2F9212105






WBFBP-02C

WBFBP-02C

Min. Max. Min. Max.

A 0.450 0.550 0.018 0.022


0.420REF. 0.017REF.

0.030REF. 0.001REF.

0.230REF. 0.009REF.


0.019REF.0.470REF.

PD2F9212105





TAPE AND REEL INFORMATION PD2F9212105





SOT-353


Quad-direction ESD Protection Array DESCRIPTION







equipments applications such as mobile phone, notebook, PAD, STB, LCD TV etc. FEATURES

Uni-directional ESD protection of four lines



Low leakage current


Fast response time


body model


APPLICATIONS






communication systems MARKING

12 = Device code

Front side

PDT35160005








Contact ModelVESD

(1)

±25

kV ±25








(1).Device stressed with ten non-repetitive ESD pulses, Per channel(I/O to GND).






1 2 1 2

2 4 2 4

3 6 3 8

4 8 4 15


0 0～249

1A 1B 1C

250～499 500～999

1000～1999

2 2000～3999 3A 3B

4000～7999 8000～15999



PDT35160005









Per Diode



Reverse leakage current IR VRWM=5V 5.0 μA

Forward voltage VF IF=10mA 0.9 V





Symbol Parameter




IT Test Current




IF Forward Current

PDT35160005






0 1 2 3 4 510

15

20

25

30

35

40

0 1 2 3 4 54

6

8

10

12

0.2 0.4 0.6 0.8 1.0 1.20.01

0.1

1

10

100

0 2 4 6 8 100

20

40

60

80

100


JUN

CTI

ON

CA

PA

CIT

AN

CE

CJ

(pF)

Ta=25f=1MHz


Ta=25tp=8/20us

CLA

MPI

NG

VO

LTAG

E V

C(V

)

VC ---- IPP


200Pulsed

T a=1

00

T a=2

5

FOR

WA

RD

CU

RR

EN

T

I F (m

A)



REV

ERSE

CU

RR

ENT

IR

(mA)


Ta=25

Ta=100

Pulsed


PDT35160005






SOT-353 Package Outline Dimensions

SOT-353 Suggested Pad Layout

Min Max Min MaxA 0.900 1.100 0.035 0.043

A1 0.000 0.100 0.000 0.004A2 0.900 1.000 0.035 0.039b 0.150 0.350 0.006 0.014c 0.080 0.150 0.003 0.006D 2.000 2.200 0.079 0.087E 1.150 1.350 0.045 0.053

E1 2.150 2.450 0.085 0.096e

e1 1.200 1.400 0.047 0.055L

L1 0.260 0.460 0.010 0.018θ 0° 8° 0° 8°

0.525 REF 0.021 REF


0.650 TYP 0.026 TYP

PDT35160005






PDT35160005





WBFBP-02C

WBFBP-02C Plastic-Encapsulate Diodes

Uni-direction ESD Protection Diode DESCRIPTION





solution for applications such as HDMI, Display Port TM, and MDDI interfaces. It is

designed to replace multiplayer varistors (MLV) in consumer equipments applications

such as mobile phone, notebook, PAD, STB, LCD TV etc.

FEATURES




Low leakage current


Fast response time


body model


APPLICATIONS







B = Device code

The dot indicates the cathode

Front side

PE2F9117105








Contact ModelVESD

(1)

±25

kV ±25














1 2 1 2

2 4 2 4

3 6 3 8

4 8 4 15


0 0～249

1A 1B 1C

250～499 500～999

1000～1999

2 2000～3999 3A 3B

4000～7999 8000～15999



PE2F9117105

















Symbol Parameter




IT Test Current




IF Forward Current

PE2F9117105






0 1 2 3 4 540

50

60

70

80

90

100

110

0 2 4 6 8 10 123

6

9

12

15

400 500 600 700 800 900 10000.1

1

10

100

0 2 4 6 8 100

20

40

60

80

100

Ta=25f=1MHz


Ta=25tp=8/20us

CLA

MPI

NG

VO

LTAG

E V

C(V

)

VC ---- IPP


13

Pulsed

T a=1

00

T a=2

5

FOR

WA

RD

CU

RR

EN

T

I F (m

A)



REV

ERSE

CU

RR

ENT

IR

(mA)


Ta=25

Ta=100

Pulsed



JUN

CTI

ON

CA

PA

CIT

AN

CE

CJ

(pF)

PE2F9117105






WBFBP-02C

WBFBP-02C

Min. Max. Min. Max.

A 0.450 0.550 0.018 0.022


0.420REF. 0.017REF.

0.030REF. 0.001REF.

0.230REF. 0.009REF.


0.019REF.0.470REF.

PE2F9117105






PE2F9117105





Electro-static Discharge (ESD)

PC0205Description

Features Applications

Functional Block Diagram

SE0521C is low capacitance Transient Voltage

Suppressors (TVS) designed to protect high

speed data interfaces. it designed to protect

sensitive components which are connected to

high-speed data and transmission lines from

overvoltage caused by ESD (electrostatic

discharge), CDE (Cable Discharge Events), and

EFT (electrical fast transients).

MP3/PMP Protable navigation

devices Protable medical Point of sale terminals

Mobile phones Smart phones Camcorders PDA Digital cameras

ESD,IEC61000-4-2, ±8kVcontact, ±15kV air

EFT,IEC61000-4-4, 40A(5/50ns)

Lightning,IEC61000-4-5,10A(tp=8/20μs)





CO .,LTD.

Absolute Maximum Ratings

Symbol Parameter Value Units

Ipp Peak current(tp=8/20μs) 10.0 A

Top Operating Temperature -40 to 85

Tstor Storage Temperature -65 to 150

CAUTION：Stresses above those listed in“Absolute Maximum Ratings”may cause permanent damage to the device.This is a stress only

rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is

not implied.

Thermal Information

Parameter Rating Units

Storage Temperature Range -65 to 150

Maximum Junction Temperature 150

Maximum Lead Temperature(Soldering 20-40s) 260

Electrical Characteristics(Top=25)

Parameter Symbol Test Conditions Min Typ Max Units

Reverse Standoff Voltage VRWM 5.0 V

Breakdown Voltage VBR IR=1mA 5.8 7 9.0 V

Leakage Current LLEAK VR=5V with 1 pin at GND 0.3 3 μA

Clamp Voltage1 VC

Ipp=1A,tp=8/20μs,FWD 9.6 V



Dynamic Resistance RDYN (VC2-VC1)/(Ipp2-Ipp1) 0.7 Ω

ESD Withstand Voltage1 VESD IEC61000-4-2(Contact) ±8 kV

IEC61000-4-2(Air) ±15 kV

Diode Capacitance1 CD Reverse Bias=0V 6 pF

Reverse Bias=2.5V 5 pF

Note: 1Parameter is guaranteed by design and/or device characterization.





Package Dimensions-0201 Flipchip

Pad Design

Part Marking System and Ordering information

Part number Package Marking Min.Order Qty.（PCS）

PC0205 0201 Flipchip - 10,000

Symbol

0201 Filpchip

Millimeters Inches

Min Typ Max Min Typ Max

A 0.595 0.620 0.645 0.023 0.024 0.025

B 0.295 0.320 0.345 0.011 0.012 0.013

C 0.245 0.275 0.301 0.009 0.010 0.12

D 0.145 0.150 0.155 0.005 0.006 0.006

E 0.245 0.250 0.255 0.009 0.009 0.010

F 0.245 0.250 0.255 0.009 0.009 0.010

G 0.005 0.010 0.015 0.0002 0.0004 0.0006

Pad Design

Symbol Millimeters Inches A 0.60 0.024

B 1.00 0.039

D 0.35 0.014

F 0.30 0.012

A

D

F B

A

B

D E

F C

G





JIANGSU SENCHIP MICROELECTRONICS CO .,LTD.

Electro-static Discharge Protection Diode

PD0205Description

Features Applications

Functional Block Diagram

The PE0205 includes back-to-back Zener diodes fabricated in a proprietary silicon avalanche technology to provide protection for electronic equipment that may experience destructive electrostatic discharges(ESD).These robust diodes can safely absorb repetitive ESD strikes above the maximum level specified in the IEC61000-4-2 international standard (level 4, ±8kV contact discharge)without performance degradation.The back-to-back configuration provides symmetrical ESD protection for data lines when AC signals are present.

MP3/PMP Protable navigation

devices Protable medical Point of sale terminals

Mobile phones Smart phones Camcorders PDA Digital cameras

ESD,IEC61000-4-2, ±8kVcontact, ±15kV air

EFT,IEC61000-4-4, 40A(5/50ns)

Lightning,IEC61000-4-5,10A(tp=8/20μs)





江苏晟芯微电子有限公司 JIANGSU SENCHIP MICROELECTRONICS

CO .,LTD.

Absolute Maximum Ratings

Symbol Parameter Value Units

Ipp Peak current(tp=8/20μs) 10.0 A

Top Operating Temperature -40 to 85

Tstor Storage Temperature -65 to 150

CAUTION：Stresses above those listed in“Absolute Maximum Ratings”may cause permanent damage to the device.This is a stress only

rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is

not implied.

Thermal Information

Parameter Rating Units

Storage Temperature Range -65 to 150

Maximum Junction Temperature 150

Maximum Lead Temperature(Soldering 20-40s) 260

Electrical Characteristics(Top=25)

Parameter Symbol Test Conditions Min Typ Max Units

Reverse Standoff Voltage VRWM 5.0 V

Breakdown Voltage VBR IR=1mA 5.8 7 9.0 V

Leakage Current LLEAK VR=5V with 1 pin at GND 0.3 3 μA

Clamp Voltage1 VC




Dynamic Resistance RDYN (VC2-VC1)/(Ipp2-Ipp1) 0.7 Ω

ESD Withstand Voltage1 VESD IEC61000-4-2(Contact) ±8 kV

IEC61000-4-2(Air) ±15 kV

Diode Capacitance1 CD Reverse Bias=0V 40 pF

Reverse Bias=2.5V 35 pF

Note: 1Parameter is guaranteed by design and/or device characterization.


PD0205





江苏晟芯微电子有限公司

JIANGSU SENCHIP MICROELECTRONICS

CO .,LTD.

Package Dimensions-0201 Flipchip

Pad Design

Part Marking System and Ordering information

Part number Package Marking Min.Order Qty.（PCS）

PD0205 0201 Flipchip - 10,000

Symbol

0201 Filpchip

Millimeters Inches

Min Typ Max Min Typ Max

A 0.595 0.620 0.645 0.023 0.024 0.025

B 0.295 0.320 0.345 0.011 0.012 0.013

C 0.245 0.275 0.301 0.009 0.010 0.12

D 0.145 0.150 0.155 0.005 0.006 0.006

E 0.245 0.250 0.255 0.009 0.009 0.010

F 0.245 0.250 0.255 0.009 0.009 0.010

G 0.005 0.010 0.015 0.0002 0.0004 0.0006

Pad Design

Symbol Millimeters Inches A 0.60 0.024

B 1.00 0.039

D 0.35 0.014

F 0.30 0.012

A

D

F B

A

B

D E

F C

G


PD0205





APPLICATIONS

RS-232, RS-422 & RS-423 Data Lines

Audio/Video Inputs

Wireless Network Systems

Digit Video Interface (DVI)

Medical Sensors

Notebook Computers

IEC COMPATIBILITY

IEC61000-4-2 (ESD) ±30kV (air), ±30kV (contact) -- 3.3V~18V

IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) -- 24V~36V

BIDIRECTIONAL TVS DIODE ARRAY

FOR LATCH-UP PROTECTION

SOT-23

IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) -- 24V~36V

IEC61000-4-4 (EFT) 40A (5/50ηs)


FEATURES


Protects two bi-directional I/O lines


Working voltages : 3.3V to 36V

Low leakage current


SOT-23 Package




Reel Size : 7 inch


PIN CONFIGURATION


PET232351 Series





(V) (V) @1A (µA) (pF)


5 6 1 9.8 18

19 32 11 1

IR CTVCIT

TL 260 (10 sec.)


VB

PART NUMBERDEVICE

MARKING

VRWM

150

PARAMETER


VC

SMC12 C12 12 13.3 1

75



UNITS


TJ -55 ~ 150



SYMBOL VALUE

PPP 350 Watts

17 10

65

C03 40 22073.3 4 1 10.5 20

C05

C08 8 8.5 1 13.4 24 12 1

60 75 5 1 15C36 36 40 1

43 52 7 1 40C24 24 26.7 1

60

C18 18 20 1 29 45 9 1 55

19 32 11 1

C15 15 16.7 1 24 38 10 1

C12 12 13.3 1 65

PET23235103

PET23235105

PET23235108

PET23235112

PET23235115

PET23235118

PET23235124

PET23235136





SOT-23


Uni-direction ESD Protection Diode

DESCRIPTION





solution for applications such as Digital cameras,cellular phones, and MP3 Players. It

is designed to replace multiplayer varistors (MLV) in consumer equipments

applications such as mobile phone, notebook, PAD, STB, LCD TV etc.

FEATURES




Low leakage current


Fast response time


body model


APPLICATIONS


Digital Cameras




Mp3 Players



12M = Device code

Solid dot = Green molding compound device,if none,

the normal device

Front side




PET23122112





Contact ModelVESD

(1)

±25

kV ±25














1 2 1 2

2 4 2 4

3 6 3 8

4 8 4 15


0 0～249

1A 1B 1C

250～499 500～999

1000～1999

2 2000～3999 3A 3B

4000～7999 8000～15999



















Symbol Parameter




IT Test Current




IF Forward Current






0 3 6 9 120

10

20

30

40

50

0 2 4 6 8 1010

15

20

25

30

200 300 400 500 600 700 800 900 10000.01

0.1

1

10

100

0 5 10 15 20 25 300

20

40

60

80

100


JUN

CTI

ON

CA

PA

CIT

AN

CE

CJ

(pF)

Ta=25f=1MHz


Ta=25tp=8/20us

CLA

MPI

NG

VO

LTAG

E V

C(V

)

VC —— IPP

REVERSE PEAK PULSE CURRENT IPP(A)

Pulsed

T a=1

00

T a=2

5

FOR

WA

RD

CU

RR

EN

T

I F (m

A)



REV

ERSE

CU

RR

ENT

IR

(mA)


Ta=25

Ta=100

Pulsed







Min Max Min MaxA 0.900 1.150 0.035 0.045

A1 0.000 0.100 0.000 0.004A2 0.900 1.050 0.035 0.041b 0.300 0.500 0.012 0.020c 0.080 0.150 0.003 0.006D 2.800 3.000 0.110 0.118E 1.200 1.400 0.047 0.055E1 2.250 2.550 0.089 0.100ee1 1.800 2.000 0.071 0.079LL1 0.300 0.500 0.012 0.020θ 0° 8° 0° 6°

0.550 REF 0.022 REF

SymbolDimensions In InchesDimensions In Millimeters

0.950 TYP 0.037 TYP





Miniature Surface Mount Polymeric ESD Suppressors Suppressors

PTS0402V14T500 Specification

No. 24-1 Industry E. Rd. IV, Hsinchu Science Park Hsinchu, 300 Taiwan TEL: +886 (3) 564-3931 FAX: +886 (3) 564-4624

h t t p : / / w w w . p t t c . c o m . t w

台灣新竹科學工業園區工業東四路24-1號 TEL: +886 (3) 564-3931 FAX: +886 (3) 564-4624

2012/8 Revision 1.4

L

W1W

T

D

D

PRODUCT OVERVIEW Polytronics PolyTrans® ESD Suppressor is the leading ESD protection solution to meet IEC

61000-4-2 level 4 transient and at the same time remain signal integrity above 4.5 Gbps. It is

the ideal supplement protection solution for built-in IC protection to improve the overall

stability and robustness of the products in the event of an ESD transient. PolyTrans® ESD

Suppressor utilizes polymeric materials and advanced processes to help reduce the overall

cost of added protection and at the same offer low leakage current to maximize battery life of

the end product.

FEATURES Compact size (1.0 mm x 0.5 mm)

Fast response time

Low capacitance

Low leakage current

RoHS and Halogen Free compliant

Bi-directional

Surface mount

Meet IEC 61000-4-2 level 4

APPLICATIONS HDMI 1.4 Hardware

Set-Top Box

Desktop / Laptop Computers

Fingerprint Device

USB 3.0 / IEEE 1394

Computer Peripherals

Network Hardware

Portable and Handheld Electronics

EQUIVALENT CIRCUIT

PTS0402V14T500

ELECTRICAL CHARACTERISTICS

Part Number Typical Trigger

Voltage (IEC)

Typical Clamping

Voltage (IEC)

Rated

Voltage

Typical

Capacitance

Response

Time

Leakage

Current

ESD Pulse

Withstand

PTS0402V14T500 500V 50V 14VDC 0.1pF < 1nS < 10nA 1000

General Explanation of Part Numbering System: PT - PolyTrans ESD Suppressors. S - Single Channel Device. 0402 - Device Dimension.

V14 - Rated DC voltage. T500 - Typical Trigger Voltage.

Dimensions (mm)

Part Number L W T D w1

min max min max min max min max min max

PTS0402V14T500 0.90 1.10 0.40 0.60 0.23 0.39 0.10 0.35 0.12 0.28







2012/8 Revision 1.4

A

D

a1

d1

occupied area

solder paste

C

C1

Bb1

Recommended Solder Pad Dimension (mm)

PHYSICAL SPECIFICATION

Materials Body: Epoxy Fiberglass Terminals: Copper/Tin

Solderability MIL-STD-202, Method 208

Soldering Parameters

Wave Solder: 260°C, 5 seconds maximum Reflow Solder: 260°C, 10 seconds maximum

ENVIRONMENTAL SPECIFICATION Operation

Temperature -65°C ~ 125°C

Moisture Resistance

85°C/85%RH 1000 Hr.

Thermal Shock MIL-STD-202, Method 107 -65°C ~ 125°C, 30 min. cycle, 10 cycles

SOLDER REFLOW Recommended Pb-Free Assembly Profile Parameters

Note 1: All temperature refer to topside of the package, measured on the package body surface. Note 2: If reflow temperatures exceed the recommended profile, devices may not meet the performance requirements.

Recommended reflow methods: IR, vapor phase oven, hot air oven, N2 environment for lead-free. Recommended maximum paste thickness is 0.25mm (0.010 inch). Devices can be cleaned using standard industry methods and solvents. Devices can be reworked using the standard industry practices.

Part Number A B C D a1 b1 c1 d1

PTS402V14T500 1.55 0.56 0.58 0.38 1.45 0.54 0.52 0.41

Description Condition Average Ramp-Up Rate (Tsmax to Tp) 3°C/second max. Preheat -Temperature Min (Tsmin) -Temperature Max (Tsmax) -Time (Tsmin to Tsmax)

150°C 200°C

60~180 seconds Time maintained above: -Temperature (TL) -Time (tL)

217°C

60~150 seconds Peak Temperature (Tp) - Time within 5°C of Actual Tp

260°C 10 seconds max

Ramp-Down Rate 3°C/second max. Time 25°C to Peak Temperature 8 minutes max.

t 25 C to Peak

tSPreheat

tLTsmax

Tsmin

Critical ZoneTL to TP

tPTP

TL

25

Ramp-up

Tem

per

atu

re

Time

Ramp-down







2012/8 Revision 1.4

P

T

d

Dd Dst

CtPs Pw

Ph

Tw

W4 W

D

H

W

C

3

W2

W1F

PACKAGING SPECIFICATION 8mm Tape and Reel per EIA-RS481-1 (IEC 286, part3); 0402/10000 pieces per reel.

Parts are delivered on on 7” (178mm) reel, paper carrier tape.

Storage condition: 0°C ~ 40°C, ≤70%RH.

Description Measurement (mm) Description Measurement (mm)

PTS0402 PTS0402 Ct 0.053 ± 0.01 H 12.0 ± 0.05 Dd 1.50 ± 0.1 W 9.0 ± 0.5 Ds 4.00 ± 0.1 D 60 ± 0.5 Pd 0.41 ± 0.1 F 13.0 ± 0.2 Ph 1.12 ± 0.1 C 178 ± 1.0 Ps 2.00 ± 0.1 W1 2.2 ± 0.5 Pw 0.62 ± 0.1 W2 3.0 ± 0.5 Tt 0.61 ± 0.1 W3 4.0 ± 0.5 Tw 8.00 ± 0.1 W4 5.5 ± 0.5



PTS0603 Series Specification




2012/07 Revision 1.6







the end product.


Fast response time

Low capacitance

Low leakage current

RoHS compliant

Bi-directional

Surface mount



Set-Top Box


Fingerprint Device

USB 3.0 / IEEE 1394


Network Hardware


EQUIVALENT CIRCUIT

PTS 0603

Series



Voltage (IEC)

Typical Clamping

Voltage (IEC)

Rated

Voltage

Typical

Capacitance

Response

Time

Leakage

Current

ESD Pulse

Withstand

PTS0603V06T350 350V 35V 6VDC 0.1pF < 1nS < 10nA 1000

PTS0603V24T500 500V 50V 24VDC 0.1pF < 1nS < 10nA 1000 General Explanation of Part Numbering System: PT - PolyTrans ESD Suppressors. S - Single Channel Device. 0603 - Device Dimension.

V06/V14/V24 - Rated DC voltage. T350/T500 - Typical Trigger Voltage.













Dimensions (mm)

Recommended Solder Pad Dimension (mm)

ENVIRONMENTAL SPECIFICATION

Operation Temperature -65°C ~ 125°C

Moisture Resistance

85°C/85%RH 1000 Hr.


Part Number L W T D d

min max min max min max min max min max

PTS 0603 Series

1.40 1.80 0.60 1.00 0.40 0.60 0.25 0.45 0.12 0.18

Part Number A B C D a1 b1 c1 d1

PTS 603 Series 3.05 0.76 1.27 0.51 2.95 0.74 1.2 0.54

A

D

a1

d1

occupied area

solder paste

C

C1

Bb1








P

T

d

Dd Dst

CtPs Pw

Ph

Tw

W4 W

D

H

W

C

3

W2

W1F




PACKAGING SPECIFICATION 8mm Tape and Reel per EIA-RS481-1 (IEC 286, part3); 0603/5000 pieces per reel..




PTS0603 PTS0603 Ct 0.06 ± 0.01 H 12.0 ± 0.5 Dd 1.50 ± 0.1 W 9.0 ± 0.5 Ds 4.00 ± 0.1 D 60 ± 0.5 Pd 0.58 ± 0.1 F 13.0 ± 0.2 Ph 1.85 ± 0.1 C 178 ± 1.0 Ps 4.00 ± 0.1 W1 2.2 ± 0.5 Pw 1.02 ± 0.1 W2 3.0 ± 0.5 Tt 0.65 ± 0.1 W3 4.0 ± 0.5 Tw 8.00 ± 0.1 W4 5.5 ± 0.5


150°C 200°C


217°C


260°C max 10 seconds


t 25 C to Peak

tSPreheat

tLTsmax

Tsmin


tPTP

TL

25

Ramp-up

Tem

per

atu

reTime

Ramp-down



PTM1004V06T500 Specification (Engineering)



台灣新竹科學工業園區工業東四路24--1號 TEL: +886 (3) 564-3931 FAX: +886 (3) 564-4624

2013/12 Revision 1







the end product.


Fast response time

Low capacitance

Low leakage current

RoHS compliant

Bi-directional

Surface mount



Set-Top Box


Fingerprint Device

USB 3.0 / IEEE 1394


Network Hardware


EQUIVALENT CIRCUIT



Voltage (IEC)

Typical Clamping

Voltage (IEC)

Rated

Voltage

Typical

Capacitance

Response

Time

Leakage

Current

ESD Pulse

Withstand

PTM1004V06T500 500V 50V 6VDC < 0.1pF < 1nS < 1uA 1000

General Explanation of Part Numbering System: PT - PolyTrans ESD Suppressors. M – Multi-Channel Device. 1004- Device Dimension.

V06 - Rated DC voltage. T500 - Typical Trigger Voltage.

PTM1004V06T500







2013/12 Revision 1






DIMENSION (mm)

RECOMMENT SOLDER PAD DIMENSION (mm)

Part Number L W T D1 D2 L1 L2 W1

min max min max min min min max min max min max min max min max

PTM1004V06T500 2.4 2.6 0.9 1.1 0.4 0.6 0.2 0.4 0.3 0.5 0.45 0.55 0.45 0.55 0.2 0.3

Part Number L1 L2 L3 L4 W1 W2 W3

PTM1004V06T500 0.5 1.0 0.4 0.3 1.4 0.6 0.2







2013/12 Revision 1

ENVIRONMENTAL SPECIFICATION

Operation Temperature -65°C ~ 125°C

Moisture Resistance

85°C/85%RH 1000 Hr.






150°C 200°C


217°C


260°C max 10 seconds max


t 25 C to Peak

tSPreheat

tLTsmax

Tsmin


tPTP

TL

25

Ramp-up

Tem

per

atu

re

Time

Ramp-down







2013/12 Revision 1

P

T

d

Dd Dst

CtPs Pw

Ph

Tw

W4 W

D

H

W

C

3

W2

W1F

PACKAGING SPECIFICATION 8mm Tape and Reel per EIA-RS481-1 (IEC 286, part3); 5000 pieces per reel.




PTM1004 PTM1004 Ct 0.06 ± 0.01 H 12.0 ± 0.5 Dd 1.50 ± 0.1 W 9.0 ± 0.5 Ds 4.00 ± 0.1 D 60 ± 0.5 Pd 0.58 ± 0.1 F 13.0 ± 0.2 Ph 2.72 ± 0.1 C 178 ± 1.0 Ps 4.00 ± 0.1 W1 2.2 ± 0.5 Pw 1.22 ± 0.1 W2 3.0 ± 0.5 Tt 0.65 ± 0.1 W3 4.0 ± 0.5 Tw 8.00 ± 0.1 W4 5.5 ± 0.5


wbfbp-02c-a plastic-encapsulate diodes esd.pdf · polytronics confidential. transmission line pulse...

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