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LASER-ASSISTED SOLAR CELLMETALLIZATION PROCESSING
S. DuttaJPL NO. 9950-902
Quarterly Report for the Period September 13to December 12, 1983
Jet Propulsion LaboratoryContract No. 956615
January 16, 1984
Westinghouse R&D Center1310 Beulah RoadPittsburgh, Pennsylvania 15235
https://ntrs.nasa.gov/search.jsp?R=19840021285 2020-03-26T06:24:11+00:00Z
This work was performed for the Jet Propulsion Laboratory, CaliforniaInstitute of Technology, and was sponsored by the United States Departmentof Energy through an agreement with the National Aeronautics and SpaceAdministration.
This report was prepared as an account of work sponsored by the United StatesGovernment. Neither the United States nor the United States Department ofEnergy, nor any of their employees, nor any of theiY contractors, subcon-tractors, or their employees, makes any warranty, expressed or implied, orassumes any legal liability or responsibility for the accuracy, completenessor usefulness of any information, apparatus, product or process disclosed,or represents that its use would not infringe privately owned rights.
DIST. CATEGORY UC-63DOE/JPL-956615/84/1DRD No. SE5DRL No. 203
LASER-ASSISTED SOLAR CELLMETALLIZATION PROCESSING
S. Dutta
Quarterly Report for the Period September 13to December 12, 1983
Jet Propulsion LaboratoryContract No. 956615
January 16, 1984
CONTENTS
LIST OF FIGURES iii
1. SUMMARY 1
1.1 Literature Search 3
1.1.1 Photodissociation Metal Deposition 3
1.1.2 Pyrolytic Metal Deposition 4
1.1.3 Laser-Assisted Electroplating 5
1.2 Design and Construction of the Laser Photolysis System 5
1.3 Summary of Laser-Enhanced Electroplating Results 10
1.3.1 Experimental Details 11
2. CONCLUSIONS AND RECOMMENDATIONS 16
3. PROJECTION OF ACTIVITIES FOR SECOND QUARTER 17
4 . REFERENCES 18
Page intentionally left blank
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LIST OF FIGURES
Page
Figure 1. Milestone Chart 2
Figure 2. Top view of gas-fill and pumping station. 6
Figure 3. Cross section of gas-fill and pumping station. 7
Figure 4. Schematic of sample chamber. 8
Figure 5. Schematic of experimental set-up forlaser-assisted photolysis. 9
Figure 6. 150X Nomarski micrograph of smallest plated spot. 10
Figure 7. 100X Nomarski micrograph of line plated using singleslow scan. 14
Figure 8. 200X Nomarski micrograph of line plated usingmultiple rapid scans. 15
iii
1. SUMMARY
The Westinghouse Electric Corporation has undertaken, in JPL
Contract No. 956615, to investigate, develop, and characterize laser-
assisted processing techniques utilized to produce the fine line, thin
metal grid structures that are required to fabricate high-efficiency
solar cells. Two basic techniques for metal deposition will be
investigated, as follows: (1) photochemical decomposition of liquid or
gas phase organometallic compounds utilizing either a focused, CW
ultraviolet laser (System 1) or a mask and ultraviolet flood
illumination, such as that provided by a repetitively pulsed, defocused
excimer laser (System 2), for pattern definition, and (2) thermal
deposition of metals from organometallic solutions or vapors utilizing a
focused, CW laser beam as a local heat source to draw the metallization
pattern.
The purpose of this contract is to investigate the various
existing laser-assisted film deposition techniques in order to develop a
new, cost-effective technology for solar cell metallization. The tasks
that will be performed in the conduct of these investigations are
detailed below and summarized in the milestone chart in Figure 1.
In the first three months of this contract, a comprehensive
literature search has been carried out on the various state-of-the-art
laser-assisted techniques for metal deposition, including laser chemical
vapor deposition and laser photolysis of organometallics, as well as
laser-enhanced electroplating. A compact system for the experiments
involving laser-assisted photolysis of gas-phase compounds has been
designed and constructed. Initial experiments on laser-enhanced
electro-plating have yielded very promising results, with linewidths as
fine as 25 urn and plating speeds as high as 12 um/sec being achieved.
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1.1 Literature Search
The results of the literature survey are briefly summarized in
the following paragraphs.
1.1.1 Photodissociation Metal Deposition
Laser-induced photodecomposition of gas-phase organometallic
compounds is fundamentally a nonthermal process, involving multiphoton
absorption by the compound, which then dissociates, liberating metal
atoms in the vicinity of a suitable substrate. These atoms then
condense onto the illuminated regions of the substrate forming a metal
film. Localization of the substrate illumination is achieved either by
focusing the laser or by using flood illumination in conjunction with a
mask.
Draper'1' has deposited both Cr and Mo using off-resonance
laser-induced dielectric breakdown of metal-carbonyl vapors with a
pulsed COj laser. Solanki et al.' ) used a pulsed copper hollow cathode
laser at 260 nm, utilizing the multiphoton absorption that occurs at
this ultra-violet wavelength for carbonyl molecules, to deposit Cr, Mo,
and W films. The laser was operated at 150 mW peak power with pulse
widths of 120 MS. Ehrlich, Deutsch, and Osgood'^-o) have performed a
variety of experiments using both pulsed (excimer lasers, 1-100 mJ, 10
ns) and CW (frequency-doubled Ar+ laser, 10 MW-3) UV lasers. In one of
their most interesting experiments,'^' a two-step process was used to
deposit patterned Cd, Al, and Zn films from metal-alkyl vapors. In the
first step, localized pre-nucleation was achieved by using a focused UV
laser to irradiate the substrate in the requisite pattern, photodissoci-
ating a thin, adsorbed layer of metal-alkyl molecules. The laser was
then defocused to illuminate the entire substrate, causing film growth
to occur selectively in the pre-nucleated regions. These experiments
also indicated that films of one metal, e.g., Al, could be grown on
nucleation centers of a second, dissimilar metal, e.g., Zn. Table 1
lists the encapsulant gases Ehrlich et al. used in their experiments.
Table 1
Encapsulant Gases Used by M.I.T. LincolnLaboratory for Photodissociation
Cd (CH3)2 Fe (C0)5 CF3I
Zn (CH3)2 W (C0)6 SnCl4
Sn (CH3)4 Cr (C0)6
Ga (CH3)3
Bi (CH3)3
Si (CH3)4
Ge (CH3)4
A12 (CH3)6
In another set of experiments, Coombe and Wodarczyk^'' used KrF (249 nm)
and XeCl (308 nm) excimer lasers to induce the localized deposition of
Zn and Mg films from the pure metal vapors. The laser pulses used in
these experiments were typically 20 ns in duration and carried energies
of up to 20 mJ (KrF) or 5 mJ (XeCl).
1.1.2 Pyrolytic Metal Deposition
Chemical vapor deposition (CVD) of metals is conventionally
accomplished by resistively or inductively heating an appropriate
substrate in a reactive atmosphere, with pyrolysis reactions at the
substrate surface providing the basis for film growth. Laser chemical
vapor deposition (LCVD) is achieved by using pulsed or CW lasers of
suitable wavelengths to selectively heat localized areas of substrates
which absorb at those wavelengths, areas adjacent to the illuminated(8)regions remaining comparatively cool. Allen and Bass have used a C02
laser to deposit nickel on quartz substrates from gaseous Ni(CO)4« LCVD
metal thicknesses tend to be self-limiting, with a maximum thickness of
550 A being obtained for nickel.
1.1.3 Laser-Assisted Electroplating
Another new laser-processing technique that is of interest in
this program is laser-assisted electroplating. Maskless plating was(9)achieved by von Gutfield et al., utilizing a CW or pulsed laser
focused onto an electroplating bath. Local plating enhancement rates aso
high as ~ 10 have been obtained by this technique. A CW multimode
argon-ion (1.5 W output power) or a krypton-ion laser tuned to 647.1 nm
(100 mW output power) was used, the argon-ion laser being particularly
suitable for Ni and Cu plating solutions and the krypton-ion laser being
better suited to Au plating solutions. The laser was focused to spot
sizes of 100-300 urn onto a dielectric substrate predeposited with a
thin, absorbing metallic film. The predeposited thin film consisting of
W, Mo, or Ni ~ 1000 A thick both absorbed the optical energy and served
as the cathode of the electroplating cell.
1.2 Design and Construction of the Laser Photolysis System
Based on this literature search a set-up for conducting laser-
assisted photolysis of gas-phase of organometallic compounds was
designed and constructed. The system consists of a gas-fill and pumping
station, as shown in Figures 2 and 3, which will be permanently
installed in a chemical fume hood, and separate, portable sample
chambers which will be evacuated, filled with the required organo-
metallic compound, and carried to the laser for the photodecomposition
experiments. A schematic of one of the sample chambers is shown in
Figure 4. Separate sample chambers will be used for each different
compound, thus reducing the risk of contamination. The gas-fill station
is fitted with a heater assembly to enable it to be baked out and
thoroughly degassed. The sample chamber will also have heating tape
wrapped around it. Figure 5 shows a schematic of the experimental
set-up for gas-phase photolysis. Over the next quarter extensive
experiments will be carried out using this system to deposit some of the
metals from the organometallic compounds listed in Table 2.
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Table 2
Sources of Useful Metals for Photovoltaic Applications
Metal Source Properties
Chromium
Nickel
Tin
Titanium
Tungsten
Cr (C0)6
Molybdenum Mo (C0)6
Ni (C0)4
(CH3)4 Sn
Ti [N(CH3)2]4
w (co)6
Crystalline; m.p. HO decomposes;density 1.77
Crystalline; m.p. 150°decomposes; b.p. 156.4/766 mm;density 1.96
liquid; air-sensitive; m.p. - 25°;b.p. 43°; density 1.32
liquid; m.p. - 54.8°; b.p. 78°;density 1.3149
liquid; moisture-sensitive; b.p.50°/0.05 nm; vap. press. 8 mm/80°C
crystalline; m.p. approx. 150°decomposes; b.p. 175/766 mm;density 2.65
1.3 Summary of Laser-Enhanced Electroplating Results
Experiments on laser-enhanced electroplating were carried out
using a focused argon-ion laser, x-y scanning mirrors, a copper plating
solution, and silicon wafers coated with evaporated titanium-palladium
layers. Details of the experiment are presented in Section 1.3.1. The
laser power, focussed spot size, plating current, and volume of electro-
lyte were all varied to determine the finest line that could be plated.
The plated spots and lines were characterized by Nomarski microscopy and
Talystep profiling. A 1 cm-long, dense, uniform line, 25 Mm wide and
6000 A thick, was plated using a mirror scan rate of 25 cm/sec, a total
exposure time of 25 sec, a laser power of 4 W, and a negative plating
current of 1 mA. A dramatically high plating rate of 12 ym/sec was
achieved using this technique.
10
1.3.1 Experimental Details
Details of the experiments on laser-enhanced electroplating and
a summary of the data obtained are presented in this section.
The electrolyte used was a copper plating solution of the
following composition: 37.4 g. CuSO '51 0 and 4.2 ml. H2S04 in 200 ml.
de-ionized water. Electroplating was carried out on 2-inch silicon
wafers coated with thin films of evaporated metal — 1000 A titanium,
1000 A palladium, and a two-layer system of palladium on titanium, each
1000 A thick. Plating was observed to occur only on the two-metal
system — the titanium alone could not be plated upon, and the palladium
alone did not adhere to the silicon surface. An insulated wire was
attached to each wafer surface with silver epoxy, allowing the wafer to
be used as the cathode of the electrolytic cell. A copper strip was
used as the anode. The wafer was placed flat in a shallow dish
containing the electrolyte. A multimode argon-ion laser was focussed to
a 30 ym spot onto the wafer surface. The laser spot could be scanned
across the wafer by x-y mirrors.
Careful experiments were carried out to determine the factors
affecting the size of the plated region. Plating current, laser power,
focal distance, and level of electrolyte were all varied to determine
the effect of each on the plated spot size. Using ac bias caused the
plated spots to deplate with time, so negative bias was used. At higher
laser powers, the electrolyte would start boiling, thus broadening the
plated spot. The size of the spot was also found to be proportional to
the plating current and the volume of electrolyte. The dependence on
focal distance was weak at higher laser powers and plating currents, but
became much sharper when the laser power and plating current were
reduced to minimal values.
The smallest spot plated with a total laser exposure time of
5 sec was 80 urn, as shown in Figure 6. The laser power used was 4 W and
the plating current applied was 1 mA.
11
Figure 6. 150X Nomarski micrograph of line plated using singleslow scan.
12
RM-2200
Using the x and y scanning mirrors, plated lines were written.
In one experiment, one of the mirrors was scanned a single time over
1 cm, the scan period being 25 sec. The laser power and plating current
were 4 W and 1 mA, respectively. The plated line was somewhat uneven,
varying in width from 40-60 pm, as shown in Figure 7, with a thickness
of approximately 3000 A, as determined by Talystep profiling.
The finest and densest line was plated using a rapid scan rate
of 25 cm/sec over a total exposure time of 20 sec. A laser power of 4 W
and a plating current of 2 mA were used. The 1 cm-long plated line was
25 um wide, 6000 A thick, and very even along its entire length, as
shown in Figure 8. A plating rate as high as 12 pm/sec was achieved
with this line.
The laser-enhanced electroplating experiments have yielded
exciting results. If time permits, it would be interesting to pursue
further experiments along these lines using a silver plating solution.
13
Figure 7. 100X Nomarski micrograph of line plated usingsingle slow scan.
14
RM-2201
Figure 8. 200X Nomarski micrograph of line plated usingmultiple rapid scans.
15
RM-2202
2. CONCLUSIONS AND RECOMMENDATIONS
The literature survey of the current state-of-the-art laser
metallization schemes indicates that the excellent surface adhesion, the
quality of the metal deposited, the cleanliness of the system, the
ability to direct-write a metal pattern, and the fine-line resolution
obtained make such systems particularly attractive for solar cell
metallization. Another advantage of laser-assisted metallization for
photovoltaic applications is the in-situ, localized sintering that takes
place, shallow junction degradation being avoided because of the very
short laser wavelengths used. The major drawback to laser-assisted
pyrolytic and photolytic metal deposition from gas-phase compounds may
be the relatively slow deposition rates. A detailed evaluation of the
economics of the direct-write versus the mask/flood illumination
techniques will be made, and the experiments on gas-phase photolysis
carried out in the next quarter will be used to refine the preliminary
evaluation. In the meantime, it appears that laser-assisted deposition
from the liquid phase may be particularly promising because of the much
higher deposition rates expected. Experiments using a laser to
thermally decompose spin-on metal-bearing polymer films and metallo-
organic inks are planned for the next quarter.
The promising results of the laser-enhanced electroplating
experiments have opened up yet another possibility. The initial
diffusion barrier layers may be deposited over the entire wafer by flood
illumination-enhanced photolysis, with subsequent laser-assisted
electroplating being used for pattern definition. This technique would
have the advantage of having the entire silicon surface protected by the
diffusion barrier during electro-plating, the unplated regions being
etched away later.
16
3. PROJECTION OF ACTIVITIES FOR SECOND QUARTER
A preliminary evaluation of the economics of the laser
metallization schemes under study will be made. Extensive experiments
on metal deposition by excimer laser-assisted photolysis of gas-phase
organometallic compounds will be carried out using the system described
in Section 1.2. The direct-write and mask/flood illumination techniques
for patterning will be compared. Laser-assisted pyrolytic decomposition
of liquids will be studied. Metallo-organic silver inks and spin-on
metal-bearing polymer films will be used for these experiments. If time
permits, the laser-enhanced electroplating experiments may be continued
using silver plating solutions.
17
4. REFERENCES
1. C. W. Draper, J. Phys. Chem. 84, 2084 (1980); Met. Trans. 11A, 349(1980).
2. R. Solanki, P. Boyer, J. E. Mahan, and G. J. Collins, Appl. Phys.Lett. 38, 572 (1981).
3. T. F. Deutsch, D. J. Ehrlich, and R. M. Osgood, Jr., Appl. Phys.Lett. J35_, 175 (1979).
4. D. J. Ehrlich, R. M. Osgood, Jr., and T. F. Deutsch, Appl. Phys.Lett. 38, 946 (1981).
5. D. J. Ehrlich, R. M. Osgood, Jr., and T. F. Deutsch, J. Electrochera.Soc. 128, 2039 (1981).
6. D. J. Ehrlich, R. M. Osgood, Jr., and T. F. Deutsch, J. Vac. Sci.Technol. 21, 23 (1981).
7. R. D. Coombe and F. J. Wodarczyk, Appl. Phys. Lett. 37, 846 (1980).
8. S. D. Allen, IEEE J. Qauntura Electron. QE-15, 43D (1979); S. D.Allen and M. Bass, J. Vac. Sci. Technol. 16, 431 (1979).
9. R. J. von Gutfield, E. E. Tynan, R. L. Melcher, and S. E. Blum,Appl. Phys. Lett. 35, 651 (1979).
18
Flat Plate Solar Array"ail
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General Electric CompanyAttn. R. N. Hall
Corp. R 4 DP. 0. Box 43Schenectady, NY 12301
General Electric CompanyValley Forge Space CenterAttn: Aaron KirpichP. 0. Box 8555Philadelphia, PA 19101
Distribution List #647 - Process Development Area & Advanced Processes Area02/14/84Page 4 of 11
No. ofcopies
General Electric CompanyValley Forge Space CenterAttn: G. J. Rayl
Room M2445P. 0. Box 8555Philadelphia, PA 19101
Grumman Aerospace Corp.Attn: Kenneth Speiser, Mgr.Sunrise HighwayGreat River, NY 11739
IBM CorporationAttn: Dr. A. KranEast Fishkill Rt. 52 Z/40EHopewell Junction, NY 12533
IBM CorporationAttn: Dr. G. H. SchwuttkeEast Fishkill, Rt. 52Hopewell Junction, NY 12533
IBM Federal Systems DivisionAttn: Donald F. Erat18100 Frederick PikeGaithersburg, MD 20760
ICT, IncAttn: L. P. Kelley1330 Industrial DriveShelby, MI 49455
Illinois Tool WorksAttn: J. Volkers1427 Holmes Rd.Elgin, IL 60120
Institute of Energy ConversionUniversity of DelawareAttn: John D. MeakinOne Pike Creek CenterWilmington, DE 19080
International RectifierSemiconductor DivisionAttn: M. F. Gift233 Kansas StreetEl Segundo, CA 90245
ITT CannonAttn: J. Dondlinger666 E. Dyer Rd.Santa Ana, CA 92705
No. ofcopies
Jet Propulsion LaboratoryAttn: (Contract Negotiator)
M/S 511-3034800 Oak Grove DrivePasadena, CA 91109
Jet Propulsion LaboratoryAttn: Solar Data Library
M/S 502-4144800 Oak Grove DrivePasadena, CA 91109
Jet Propulsion LaboratoryTechnology UtilizationAttn: L. P Speck
M/S 180-3024800 Oak Grove DrivePasadena, CA 91109
Kayex CorporationHamco DivisionAttn: R. L. Lane1000 Millstead WayRochester, NY 14624
Kinetic Coatings, Inc.Attn: Dr. William J. KingP. 0. Box 416South Bedford StreetBurlington, MA 01803
Kulicke and Soffa Industries, Inc.Attn: Mr. Max Bycer507 Prudential RoadHorsham, PA 19044
Lamar UniversityAttn: Dr. Carl L. YawsP. 0. Box 10053Beaumont, TX 7710
Arthur D. Little, Inc.Attn: Dr. David Almgren
Room 20-531Acorn ParkCambridge, MA 02140
35
Distribution List #647 - Process Development Area A Advanced Processes Area02/14/84Page 5 of 1.1
No. Ofcopies
Lockheed Missiles & Space CoAttn: Paul Oillard
Dept. 62-31, Bldg. 562P. 0. Box 504Sunnyvale, CA 94088
Lockheed Missiles & Space Co.Attn: L. G. Chidister
Dept. 62-25, Bldg. 151P. 0. Box 504Sunnyvale, CA 94088
Los Alamos Scientific LaboratoryAttn: S. W. MooreGroup Q-ll, Mail Stop 571Los Alamos, NM 87545
Magnetic Corporation of AmericaAttn: Bruce Straus179 Bearhill RoadWaltham, MA 02154
Massachusetts Institute of Tech.Energy LaboratoryAttn: Dr. Richard Tabors292 Main StreetCambridge MA 92142
Massachusetts Institute of Tech.Lincoln LaboratoryAttn: Mr. Ron Matlin
Room 1-210244 Wood Street or (P. 0. Box 73)Lexington, MA 02173
Massachusetts Institute of Tech.Lincoln LaboratoryAttn: Mr. Marvin Pope
Room 1-210244 Wood Street or (P. 0. Box 73)Lexington, MA 02173
Dr. H. F. MatareP. 0. Box 49177Los Angeles, CA 90049
No. ofcopies
Materials Research, Inc.Attn: Dr. Pam Natesh790 East 700 SouthCenterville, UT 84014
McDonnell DouglasAstronautics Co-East
Materials & ProcessesAttn: Mr. L. G. Harmon
Bldg. 106/4/E7St. Louis, MO 63166
Microcircuit EngineeringAttn: Richard Interlandi111 Fairfield Dr.West Palm Beach, FLA 33407
Mobil Tyco Solar Energy Corp.Attn: K. V. Ravi16 Hickory DriveWaltham, MA 02154
Mobil Tyco Solar Energy Corp.Attn: F. V. Wald16 Hickory DriveWaltham, MA 02154
Monegon, Ltd.Attn: Scott Kaufman4 Professional DriveSuite 130Gaithersburg, MD 20760
Motorola Inc.Semiconductor GroupAttn: M. ColemanMail Drop A110P. 0. Box 2953Phoenix, AZ 85062
Motorola, Inc.Semiconductor GroupAttn: William Ingle, B1365005 East McDowell RoadPhoenix, Az 85008
Distribution List #647 - Process Development Area & Advanced Processes Area02/14/84Page 6 of 1]
No. ofcopies
Motorola, Inc.Semiconductor GroupAttn: I. Arnold Lesk A-1105005 East McDowell RoadPhoenix, AZ 85008
Motorola Inc.Semiconductor GroupAttn: R. G. White, Z3275005 E. Me DowellPhoenix, AZ 85008
Mount Edison USA, Inc.Attn: Merritt KastensEast Lake RoadHamilton, NY 10036
NASA HeadquartersAttn: J. P. Mullin
Code RP-6M/S B636
Washington, DC 20546
NASA HeadquartersSolar Terr. Systems DivisionAttn: John Loria600 Independence Ave., SWWashington, DC 20546
NASA Lewis Research CenterAttn: Dr. H. w. Brandhorst,
M/S 302-121000 Brookpark RoadCleveland, OH 44135
NASA Lewis Research CenterAttn: Dr. John C. Evans Jr.
M/S 302-121000 Brookpark RoadCleveland, OH 44135
NASA Lewis Research CenterPhotovoltaic Project OfficeAttn: William Brainard
M/S 49-521000 Brookpark RoadCleveland, OH 44135
Jr.
No.copi
National Bureau of StandardsAttn: David E. SawyerBldg. 225, Room B-310Washington, DC 20234
National Science FoundationDivision of Applied ResearchAttn: Dr. Tapan Mukherjee1800 G. Street NWWashington, DC 20550
Opto Technology, Inc.Attn: W. E. Hegberg1674 South Wolf RoadWheeling, IL 60090
Owens Illinois, Inc.Attn: G. L. GlenP. 0. Box 1035Toledo, OH 43666
PRC Energy Analysis CompanyAttn: Mr. Arie P. Ariotedjo7600 Old Springhouse RoadMcLean, VA 22101
Photowatt InternationalAttn: Clay Olson2414 West 14th St.Tempe, AZ 85281
RCA, Advanced Technology Labs.Attn: M. S. CrouthamelBuilding 10-8Camden, NJ 08102
RCA LaboratoriesDavid Sarnoff Research CenterAttn: Arthur FiresterPrinceton, NJ 08540
Mjt.-i'xiticn List
Hurley fcatffeir Robarts4£CO fc'averly Ave.Garrett Park, HO 20766
Rockwell Internet icnalElectx onic? Research CenterAttm DC. H, M. Kanisevit
3>?0CA
Avanua92603
A ut one tics DivisionAttn: Mr. J.
D/542,3370 Miralaaa AvanutAnthelfl, CA 92803
Rocicweil
Attaj Mr, 8. L.Dtpt. 714
6900 DttSOto Aw.Ctroga Ptxkt CA 92304
C. T. SanAttn: Or. C. T.403 Pond Ridge LaneUibam, XL
Science AppplicationeAttn: Dr. J. A. Nabor
P. 0. 8ox 23911200 Protptct St.Li Jolla, CA 92077
Science Application*Attn: Or. Tin ttecel1710 GoodridgB DriveP. 0. Box 1303McLean, VA 22102
MO.
»tVG ' of 11
NO. ofcooies
ProcessingAttn": Mr. Kayburfl10 Inousltial PaH<
HA 02045
Shell Oil conpenvSolez rnergy Bgsiness n»v.Attn: Mr. K. A.P. 0. SOX 2453Houston, TX 77001
SlltscAttn: T. Bonora3717 Htven AvenueHenio Park, CA 94025
Siltec CorporationAttn: R. E. ,orenzinl5717 Haven AvenueHer.lo Ptrk, CA 94023
Siltec CorporationAttnt Technical Library, R ft D3717 Haven Avemie
Park, CA 9A025
Solanat, Inc.Attn; Or. Barton Roassler8B5 vatenen Ave.gist PravKJenee, HI 02914
Solar Energy Rtttarch InstituteAttn: Or. Charles J. Bishop1617 Cole Blvd.Golden, CO 60401
Solar Energy Research InstituteAttn: Cory MussU17 cola Blvd.Golden, CO 80401
Distribution List #647 - Process development Area 4 Advanced Processes Area02/14/84Page 8 of 11
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Solar Energy Research InstituteAttn: SEIC/LI8RARY1617 Cole Blvd.Golden, CO 80401
Solar Energy Research InstituteAttn: Dr. Paul Rappaport1617 Cole Blvd.Golden, CO 80401
Solar Energy Research InstitutePhotovoltaic Program OfficeAttn: D. W. Ritchie1617 Cole Blvd.Golden, CO 80401
Solar Energy Research InstitutePhotovoltaic Program OfficeAttn: Dr. C. Edwin Witt1617 Cole Blvd.Golden, CO 80401
Solar Power CorporationAttn: P. Caruso20 Cabot RoadWoburn, MA 01801
Solar Power CorporationAttn: W. T. Kurth20 Cabot RoadWoburn, MA 01801
Solarex CorporationAttn: R. Dominquez1335 Piccard DriveRockville, MD 20850
Solarex CorporationAttn: John V. Goldsmith1335 Piccard DriveRockville, MD 20850
Solarex CorporationAttn: Dr. Joseph Lindmayer1335 Piccard DriveRockville, MD 20850
No. ofcopies
Solarex CorporationAttn: Dr. Manfred Wihl1335 Piccard DriveRockville, MD 20850
Solavolt InternationalAttn: William J. KaszetaP. 0. Box 2934Phoenix, AZ 85062
Solec International, Inc.Attn: Ishaq Shahryar12533 Chadron Ave.Hawthrone, CA 90250
Southern Methodist UniversityInstitute of TechnologyElectrical Engineering Dept.Attn: T. L. ChuDallas, TX 75275
Spectrolab Inc.Attn: Alec Garcia12500 Gladstone AvenueSylmar, CA 91342
Spectrolab Inc.Attn: Dr. J. Minahan12500 Gladstone AvenueSylmar, CA 91342
Spectrolab, Inc.Attn: E. L. Ralph12500 Gladstone AvenueSylmar, CA 91342
Spectrolab, Inc.Attn: W. Taylor12500 Gladstone AvenueSylmar, CA 91342
Spire CorporationAttn: Dr. P. Younger1 Patriots ParkBedford, MA 01730
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No. ofcopies
Spire CorporationPatriots ParkAttn: R. LittleP. 0. Box DBedford, MA 01730
Springborn Laboratories, Inc.Attn: Dr. Bernard BaumWater StreetEnfield, CT 06082
Stanford Research InstituteAttn: Dr. Leonard NanisMenlo Park, CA 94025
Stanford Research InstituteMaterials Research CenterAttn: Dr. Angel Sanjurjo, G213333 Ravenswood AvenueMenlo Park, CA 94025
Stanford UniversityStanford ElectronicsAttn: J. F. GibbonsStanford, CA 94305
Stanford UniversitySolid State Electronics LabAttn: Professor G. PearsonStanford, CA 94305
State University of New YorkCollege of EngineeringDepartment of Materials ScienceAttn: Dr. Franklin F. Y. WangStony Brook, NY 11794
Strategies UnlimitedAttn: Doug Finch
Suite 205201 San Antonio CircleMountain View, CA 94040
Synthatron CorporationAttn: Hillard Blank50 Intervale Rd.Parsippany, NJ 07054
Team Inc.Attn: Harold L.P. 0. Box 672Springfield, VA
Macomber
22150
Texas Instruments, Inc.Attn: Mr. Ronald Sabol
M/S 10-1534 Forest StreetAttelboro, MA 02703
Texas Instruments, Inc.Semiconductor GroupAttn: B. Carbajal
M/S 82P. 0. Box 225012Dallas, TX 75222
Thick Film Systems, Inc.Attn: Jason D. Provance324 Palm AvenueSanta Barbara, CA 93101
Tideland Signal Corp.Attn: Mr. Carl KotillaP. 0. Box 52430Houston, TX 77052
Tracer MBAAttn: Mr. A. L. FooteBellinger Canyon RoadSan Ramon, CA 94583
TRW Systems GroupAttn: R. Yasui
Mail Stop Ml/1320One Space ParkRedondo Beach, CA 90278
No. ofcopies
Distribution List #6nl - Process DPveicp.-nent Area & Advanced Processes. Ar;:s,02/14/6:.Page 10 of 11
No. ofcopies
Underwriters LaboratoriesAttn: Al Levins1285 Walt Whitman RoadMelvilleLong Island, NY 11746
Underwriters LaboratoriesAttn: William J. Christian333 PhingstenNorth Brook, IL 60062
Union Carbide CorporationAttn: Dr. Pesho KotvalP. 0. Box 324Corporate Research BuildingTuxedo, NY 10987
Union Carbide CorporationAttn: Peter Orenski270 Park Ave. 8th FloorNew York, NY 10017
University of DelawareDepartment of Electrical EngineersAttn: Allen M. BarnettNewark, DE 19711
University of DelawareCollege of EngineeringDu Pont HallAttn: Professor Karl W. BoerNewark, DE 19711
University of MichiganAttn: Raoul Kopelman
Dept. of ChemistryAnn Arbor, MI 48104
University of Missouri-RollaCeramic Engineering DepartmentAttn: Dr. P. Darrell OwnbyRolla, MO 65401
University of New MexicoBureau of Engineering ResearchParis Eng. CenterAttn: W. W. Grannemann
Room 124Albuquerque, NM 87131
University of PennsylvaniaAttn: Professor Martin Wolf308 Moore D2Philadelphia, PA 19174
University of South CarolinaCollege of EngineeringAttn: R. B. Hilborn, Jr.Columbia, SC 29208
U. S. AirforceAir Force Aeropropulsion Lab.Attn: Mr. Joseph WiseAFAPL/POE-2Wright-Patterson AFB, OH 45433
U. S. Army/MERADCOMAttn: DRDME-E/Mr. Donald D. FaehnFort Belvoir, VA 22060
U. S. Coast GuardR 4 D CenterAttn: Dr. F. GiovaneAvery PointGroton, CT 06340
U. S. Department EnergyForrestal BuildingAttn: R. H. Annan1000 Independence Ave., SWWashington, DC 20585
U. S. Department of EnergyForrestal BuildingAttn: Dr. Morton Prince M/S 5G026Photovoltaic Energy Systems Div.1000 Independence Ave., SWWashington, DC 20585
No.copi
1
Distribution List #647 •- Process Development Area 4 Advanced Processes Area02/14/84Page 31 of 11
No. ofcopies
U. S. Department of EnergyTechnical Information Center + ReproAttn: Doc. Control & Eval. BranchP. 0. Box 62Oak Ridge, TN 37830
Varian AssociatesAttn: John M. V. Heldack-Vice Pres.
Corp. Development611 Hansen WayPalo Alto, CA 02173
Western ElectricSeminconductor Materials EngineeringAttn: R. E. Reusser - 6510555 Union BoulevardAllentown, PA 18103
Westinghouse Electric corp.Attn: C. M. RoseP. 0. Box 10864Pittsburgh, PA 15236
Westinghouse Electric CorporationPower Circuit Breaker DivisionARC Heater ProjectAttn: Dr. M. FeyTrafford, PA 15085
Westinghouse Electric CorporationResearch LaboratoriesAttn: R. H. Hopkins1310 Beulah RoadPittsburgh, PA 15235
No. ccopis
Westinghouse Electric CorporationAdvanced Energy SystemsAttn: Dr. P. F. PittmanP. 0. Box 10864Pittsburgh, PA 15236
Westinghouse Electric CorporationResearch LaboratoriesAttn: Dr. P. Rai-Choudhury1310 Beulah RoadPittsburgh, PA 15235
Westinghouse Electric CorporationResearch LaboratoriesAttn: R. K. Riel1310 Beulah RoadPittsburgh, PA 15235
Xerox Electro-Optical SystemsAttn: Mr. William E. Mortensen300 North Halstead StreetPasadena, CA 91170
Xerox Electro Optical SystemsAttn: Mr. Keith Winsor300 North HalsteadPasadena, CA 91107