wetting behaviors of a-c:h:si:o film coated nano-scale structured surface
DESCRIPTION
The International Conference On Metallurgical Coatings And Thin Films ICMCTF 2006. Wetting Behaviors of a-C:H:Si:O Film Coated Nano-scale Structured Surface. Tae-Young Kim * , *** , Bialuch Ingmar **, Klaus Bewilogua **, Kyu Hwan Oh ***and Kwang-Ryeol Lee * - PowerPoint PPT PresentationTRANSCRIPT
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Wetting Behaviors of a-C:H:Si:O Film Coated Nano-scale Structured
Surface
Tae-Young Kim*,*** , Bialuch Ingmar **, Klaus Bewilogua **, Kyu Hwan Oh ***and Kwang-Ryeol Lee *
* Future Technology Research Division, KIST, KOREA** New Tribological Coating, Fraunhofer IST, GERMANY
***School of Material Science and Engineering, SNU, KOREA
The International Conference OnMetallurgical Coatings And Thin Films
ICMCTF 2006
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Lotus Leaf Surface
• Property of lotus leaf– Water droplet is not
spread (static wetting angle reached 150o)
– Water droplet removed by slight tilting of surface (wetting angle hysteresis is very low)
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Applications of Super-hydrophobic Surface
Water repellent surfaceSelf cleaning of surfaceLow resistance coating against liquid flow
Applications related with water droplet moving
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Microstructure of Lotus Leaf
Surface Material - cuticular wax Surface morphology – very rough in micrometer scale
20μm
Planta, 202,(1998) 1
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Previous Works
Langmuir 2004; 20(2); 287-290
Langmuir 2004; 20(2); 10015
Langmuir 2006; 22; 2433
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Dual Roughness Effect?
20μm
Planta, 202,(1998) 1
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Motivation of This Work
• Does dual roughness surface structure (DRS) affect super- hydrophobic property?
• How much does DRS contribute the hydrophobic property?
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Experimental
Surface structure control:Plasma Si etching technique
Nano-meter size metal mask formation
Surface chemical control: hydrophobic a-C:H:Si:O film
deposition
Super-hydrophobic surface
Analysis
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Plasma Si Etching
Plasma source gas : CF4
Plasma source gas : CF4+O2
CF4+O2 plasma gasCF4 plasma gas
Si wafer Si wafer
– RF-PECVD– Source gas : Pure CF4 gas and CF4+O2 mixing
gas – Chamber Pressure : 2 and 5 Pa– RF power : 150 and 300 W– RF bias : 300V– Etching time : 10min
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Plasma Si Etching
Plasma source gas : CF4
Nano post formation
Plasma source gas : CF4+O2
Flat etched surface
400nm 400nm
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Surface Structure Manipulation
Without Cu mask
CFCF44+O+O2 2
plasma plasma etchingetching
CFCF44 plasma plasma etchingetching
Si wafer
Si wafer
Flat
Small Post
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Nano Size Metal Dot Formation
Si wafer
Metal film separation byby heat treatment
Cu sputtering on Si surface
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Surface Structure Manipulation
Without Cu mask With Cu mask
CFCF44+O+O2 2
plasma plasma etchingetching
CFCF44 plasma plasma etchingetching
Si wafer
Si wafer
Flat
Small Post
Si wafer
Si wafer
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Surface Structure Manipulation
Without Cu mask With Cu mask
CFCF44+O+O2 2
plasma plasma etchingetching
CFCF44 plasma plasma etchingetching
Si wafer Si wafer
Si waferSi wafer
Flat Big Post
Small Post Dual Rough
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Microstructures
Without Cu mask With Cu mask
CFCF44+O+O2 2
plasma plasma etchingetching
CFCF44 plasma plasma etchingetching
Big Post
Small Post
Flat
500nm
250nm
500nm
500nm
Dual Rough
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Static Wetting Angle
Without Cu mask With Cu mask
CFCF44+O+O2 2
plasma plasma etchingetching
CFCF44 plasma plasma etchingetching
Water drop volume : 5μLGently drop on the surface
93.2o 103.8o
134.0o 159.6o
Flat Big Post
Small Post Dual Rough
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Static Wetting Angle
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• Wetting angle hysteresis
RA
Dynamic Wetting Angle
A R
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Wetting angle hysteresis
High Low
Dynamic Wetting Angle
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Dynamic Wetting Angle
Without Cu mask With Cu mask
CFCF44+O+O2 2
plasma plasma etchingetching
CFCF44 plasma plasma etchingetching
Flat Big Post
Small Post Dual Rough
: o
o
93.2
:15.3
Y
: o
o53.
1 3.8
8
0
:
Y
: o
o48.
1 4.0
7
3
:
Y
: o
o
159.6
4.8 :
Y
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Dynamic Wetting Angle
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Dual Rough Structure Effect
134.0Static
wetting angle
159.6
48.7Wetting
angle hysteresis
4.8
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Conclusions
• We fabricated various structures with mono and dual roughness through nano structuring of Si and studied their wetting behavior.
• Dual rough structure shows higher static wetting angle and lower wetting angle hysteresis than that of mono structures.
• Dual rough structure could be effective structure for moving droplet application.