what's new with cmos imaging arrays
TRANSCRIPT
What’s New with CMOS(Complimentary Metal Oxide Semiconductor)
Imaging Arrays
Steve MurrayMarch 22, 2011
Outline of Talk
• CMOS Imaging Arrays for Infrared, Visible and SoI X-‐ray (0.1-‐10 keV)•Hybrid and Monolithic Devices–Hawaii Family (Teledyne Imaging Sensors, Jim BeleSc et al.)»HgCdTe and Si-‐PIN (HyViSi)
–Minimal Family (Sarnoff, Jim Janesick et al.)»Si -‐ Big Min, Big Min II
Astronomical SeVng
3
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Optical and Infrared Astronomy(0.3 to 25 m)
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Telescope %-('-$$#'%()*+(1-'>.($&4?% Instrument %-(3#).>5#($&4?%
2*.%5>3#*%
•OpScs (another talk)• Normal/Grazing Incidence
• On/Off Axis• RefracSve/ReflecSve• ...
•Instrument (this talk)• Camera -‐ Imaging • Spectrometer• Imaging Spectrometer• Photometer• Polarimeter• ...
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Instrument goal is to measure a 3-D data cube
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• But most detectors are 2-‐dimensional• Measure intensity, not energy• ExcepSons: X-‐ray, OpScal ( Foveon X3), 3-‐rd Gen IR ...
• OpScs used to map a porSon of the 3-‐D cube onto the 2-‐D device
Data Cube Desired
“Ideal” Imaging Detector
• Detect >98% of photons (QE)–Signal proporSonal to photon energy
• Large number of pixels (mega to giga pixel arrays)• Time tag each photon (<msec goal)• Measure photon energy/wavelength (R ~100?)• Measure photon polarizaLon • (Plus low readout noise and various operaLonal modes to enable the above)
Six Steps to an Astronomical Camera
1. Get Light into Detector
2. Generate Charge
6. Signal DigiSzaSon
AnS-‐reflecSon coaSngSubstrate removal
Detector MaterialsSi, HgCdTe, InSb, Si:As
Electric Fields in detectorcollect electrical charge
} QuantumEfficiency
Point Spread FuncSon
SensiSvity4. Charge-‐to-‐
Voltage Conversion
5. Signal Transfer
Source followerCTIA, DI
Random access or
full frame read
3. Collect the Charge
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5. Charge-‐to-‐Voltage Conversion
Charge coupledtransfer
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4. Charge Transfer
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CMOS / CCD
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CCD / CMOS Comparison
CCD Approach CMOS Approach
PixelCharge generation &
charge integrationCharge generation, charge integration &
charge-to-voltage conversion
+
PhotodiodePhotodiode Amplifier
Array ReadoutCharge transfer
from pixel to pixel
Multiplexing of pixel voltages: Successively
connect amplifiers to common bus
Sensor OutputOutput amplifier performs
charge-to-voltage conversion
Various options possible:< no further circuitry (analog out)< add. amplifiers (analog output)< A/D conversion (digital output)
CMOS = Complimentary Metal Oxide Semiconductor
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Comparison CMOS vs. CCD for Astronomy
Windowing, Guide Mode,Random Access, Reference Pixels,Large dynamic range (up the ramp)
Orthogonal TransferBinningSpecial Modes
Electronic, rolling shutter, snapshotMechanicalShutterTyp. 10x lower than CCDHighPower Consumption
Much less susceptible to radiationSensitiveRadiation
Few electrons with multiple samplingFew electronsNoise
up to 4K x 4K> 4K x 4KResolution10 – 40 µm (up to 100 µm if required)10 – 20 µmPixel pitch
400 – 1050 nm with Si PIN400 – 18,000 nm with HgCdTe400 – 5,000 nm with InSb
400 – 1050 nmTypical wavelength coverage
Low voltage onlyCan be integrated into single chip
High voltage clocks,at least 2 chips neededControl Electronics
Hybrid CMOSCCDProperty
* $+,+-./%012%3456+7%7898-9.6:%3;<8%58-.=8%;%:86+.>:%;,986/;9+<8%9.%!!?:%@6.<+7+/A%;%/>=586%.B%;7<;/9;A8:C%8:@8-+;,,4%B.6%:@;-8%;@@,+-;9+./:D
* Backside illuminated monolithic CMOS E3+-3%-.=5+/8:%938%58:9%.B%!"#$%;/7%!!?%B8;9>68:%E+,,%=;F8%=;G.6%:96+78:%58B.68%938%/8H9%7898-9.6%E.6F:3.@D
Astronomical PerspecSve
• Si PIN hybrid detectors are serious alternaSve to CCD
• HgCdTe hybrids are “standard” IR detctors
• Backside monolithic CMOS is rapidly advancing with very low read noise
T = 1−�n2 − n1
n2 + n1
�2
No AnS-‐ReflecSon CoaSng
Incident Transmiied
Reflectedn1 n2
For 0o incidence, the fracSon of incident energy transmiied is give by:
No AnS-‐reflecSon coaSng
Loss at SurfaceLoss at SurfaceLoss at Surface
Air n1=1.00
Glass n2=1.5
R=4%T=96%
Air n1=1.00
Sin2~4
R=36%T=64%
Air n1=1.00
HgCdTent=3.7
R=33%T=67%
•Si and HgCdTe detectors will reduce the effec9ve diameter of an 8m telescope to ~6.5m due to losses at an untreated surface.
•For low energy X-‐rays (<500eV), need backside illumina9on with thin dead layer is needed.
Get the light into the detectorAnS-‐ReflecSon CoaSng
T = 1−�n1n2 − n2
layer
n1n2 + n2layer
�2
Incident
Reflectedn1
Transmiiedn2
nlayer For 0o incidence, the fracSon of incident energy transmiied is give by:
OpSmized 1/4 λ-‐wave AR coaSng
1/4 λ
29
Example Anti-reflection coatings for HgCdTe
0%
10%
20%
30%
40%
50%
60%
70%
80%
90%
100%
400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600Wavelength (nm)
Tran
smis
sion
(%)
Single Layer (WFC3)
Double Layer
Three Layer (NIRCAM SWIR)
Tran
smis
sion
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the
HgC
dTe
Laye
r (%
)
Substrate removed CdZnTe detectors using thin film AR coaLngs (HfO2/SiO2) achieve >80% efficiency over broad bands and >90% at narrower bands
Teledyne Imaging Systems
For X-‐rays, Al on polyimide (0.5μ) filters block opLcal and UV at the cost of low energy (<1 kev) transmission
Photon DetecSonVisible and IR
• Electrons are excited form the conducSon band to the valence band (hν > Egap)
Material Egap (eV) λc (μm)
Si 1.12 1.1
InGaAs 0.73 -‐ 0.48 1.68 -‐ 2.6
HgCdTe 1.00 -‐ 0.07 1.24 -‐ 18
InSb 0.23 5.5
Si:As 0.05 25
X-‐ray
• Si PIN Diode is a photodiode• On average X-‐ray loses ~3.6 eV to make one electron-‐hole pair in the Si. E.g., Fe55 X-‐ray at 5.9 keV will yield 1620 electrons (Kα)
• Electrons collected at the pixels• Low energy cutoff -‐ dead layer and blocking filter
• High energy cutoff -‐ thickness of depleted layer in Si
Si AbsorpSon Depth• For high QE in the NIR, need very thick Si (300 μm)• Makes for a good cosmic ray detector
• For high QE in UV need to capture the photo-‐charge very close to the entrance (10 nm posiSve field needed)• Boron implant/anneal -‐ e2v, MIT/LL• Molecular Beam Epitaxy -‐ JPL, MIT/LL• ChemisorpSon coaSng -‐ UofA
• Index if refracSon of Si varies over λ, a challenge for AR coaSngs
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Hybrid Silicon PIN Quantum Efficiencyachieves as high QE as CCDs in the NIR
0
10
20
30
40
50
60
70
80
90
100
300 400 500 600 700 800 900 1000 1100 1200wavelength,nm
QE,
%
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Hybrid Silicon PIN Quantum Efficiencyachieves as high QE as CCDs in the NIR
0
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40
50
60
70
80
90
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Hybrid Si PIN (HyViSI) CMOS H2RG
Predicted Measured
• 800 nm 11μm• 900 nm 29μm• 1000 nm 94μm
Teledyne
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Optical Absorption Depth in Silicon:+;<;+;**=>?%*$%+@'(3@&*A&/'BC
Thick Si IR Detector is also CR Detector
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A very thick silicon detector is alsoa very good sensor of cosmic rays
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Near-IR Imaging enabled by very thick silicon sensors
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<=&'?*#..(-1(@4A+<#($)B#5*##+.(%-(>#()>-;%(#C;)$%-(%=#(';%-11(D)E#$#*4%=HgCdTe AbsorpSon • Growing the HgCdTe -‐
• Seed layer of CdZnTe • MBE allows fine control of chemistry (tunes the bandgap)
• Substrate removal recovers the short wavelength response
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Two methods for growing HgCdTe1. Liquid Phase Epitaxy (LPE)2. Molecular Beam Epitaxy (MBE)
– Enables very accurate deposition “bandgap engineering”– Teledyne has 4 MBE machines for detector growth
RIBER 10-in MBE 49 SystemRIBER 10-in MBE 49 System
RIBER 3-in MBE SystemsRIBER 3-in MBE Systems
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R. Smith (CalTech) SPIE 5-‐25-‐2006
Reduced CR sensiSvity for substrate removed HgCdTe (from IR light from CdZnTe)
For IR Customize HgCdTe
22
Tunable Wavelength: Unique property of HgCdTeTunable Wavelength: Unique property of HgCdTe
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G. L. Hansen, J. L. Schmidt, T. N. Casselman, J. Appl. Phys. 53(10), 1982, p. 7099
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Tunable Wavelength: Unique property of HgCdTeTunable Wavelength: Unique property of HgCdTe
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G. L. Hansen, J. L. Schmidt, T. N. Casselman, J. Appl. Phys. 53(10), 1982, p. 7099
•Modify the raSo of Hg and Cd to “tune” the bandgap energy
•Eg = -‐0.302 + 1.93x -‐0.81x2 + 5.35x10-‐4(1-‐2x)• Hansen, Schmidt, and Casselman Appl. Phys 1982
•“Price of admission” -‐ Dark Current
Charge CollecSon
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• Image arrays are 2D arrays of 3D pixels
• Intensity image is generated by collecSng photo-‐charge generated in the 3D pixel, typically p-‐n juncSon “sweeps” charge tp collecSon node
• CCD -‐ collect charge and move it to an edge or corner of to amplifiers for read out
• CMOS -‐ collect charge at pixel where there is an amplifier and readout mulSplexer
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Photovoltaic Detector Potential Well
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MBEgrowth
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ROIC DieReceive wafers from foundry
CMOSmixed signaldesign
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Focal Plane Array
Packaging
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Indium bump,Dice Detector arrays
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ROIC DieReceive wafers from foundry
CMOSmixed signaldesign
Fabrication at foundry
Focal Plane Array
Packaging
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Multiplexer Design and FabricationMultiplexer Design and Fabrication
HgCdTe IR FPA Manufacturing Process
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MBEgrowth
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Indium bump,Dice Detector arrays
Processed wafer
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ROIC DieReceive wafers from foundry
CMOSmixed signaldesign
Fabrication at foundry
Focal Plane Array
Packaging
Detector FabricationDetector Fabrication
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HgCdTe IR FPA Manufacturing Process
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HyViSI (Hybrid Visible light Silicon PIN)
Substrate Removal
16
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Substrate Removal of HgCdTeThe new standard in astronomy
Substrate Removal Process
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Sensor Chip Assembly
CdZnTe substrate MCT epilayer
MBEgrowth
DetectorProcessing
Indium bump,Dice Detector arrays
Processed wafer
Probe,In bump Dice
ROIC DieReceive wafers from foundry
CMOSmixed signaldesign
Fabrication at foundry
Focal Plane Array
Packaging
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Multiplexer Design and FabricationMultiplexer Design and Fabrication
HgCdTe IR FPA Manufacturing Process
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Test
Sensor Chip Assembly
CdZnTe substrate MCT epilayer
MBEgrowth
DetectorProcessing
Indium bump,Dice Detector arrays
Processed wafer
Probe,In bump Dice
ROIC DieReceive wafers from foundry
CMOSmixed signaldesign
Fabrication at foundry
Focal Plane Array
Packaging
Detector FabricationDetector Fabrication
Multiplexer Design and FabricationMultiplexer Design and Fabrication
HgCdTe IR FPA Manufacturing Process
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Detector Materials
SIDECAR ASICSystem for Image DigiSzaSon,
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Downloaded from SPIE Digital Library on 21 Mar 2011 to 128.220.144.19. Terms of Use: http://spiedl.org/terms
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Downloaded from SPIE Digital Library on 21 Mar 2011 to 128.220.144.19. Terms of Use: http://spiedl.org/terms
Teledyne Imaging Sensors HAWAII-4RG™
Visible & Infrared Focal Plane Array
The 4096!4096 pixel HAWAII-4RG™ (H4RG) is the next generation, state-of-the-art readout integrated circuit for visible and infrared instrumentation in ground-based and space telescope applications.
• Large (4096!4096 pixel) array with either 10 µm or 15 µm pixel pitch.
• Compatible with Teledyne Imaging Sensors (TIS) HgCdTe infrared (IR) and silicon PIN HyViSI™ visible detectors, providing sensing of any spectral band from soft X-ray to 5.5 "m.
• Substrate-removed HgCdTe enhances the J-band QE, enables response through the visible spectrum (70% QE down to 400nm), and eliminates fluorescence from cosmic radiation absorbed in the substrate, and eliminates fringing in the substrate material.
• Reference rows and columns for common-mode noise rejection.
• Guide window output – windowing with simultaneous science date acquisition of full array. Programmable window which may be read out at up to 5 MHz pixel rate for guiding. Readout is designed to allow interleaved readout of the guide window and the full frame science data.
• Selectable number of outputs (1, 4, 16, 32 or 64) and user-selectable scan directions provide flexibility in data acquisition.
• Built with modularity in mind – the array is 4-side-buttable to allow assembly of large mosaics of 4096!4096 H4RG modules.
• Fully compatible with the TIS SIDECAR™ ASIC Focal Plane Electronics.
For more information, please email Richard Blank at [email protected] or call +1 805 373-4083.
Published Information – Cleared for Public Release by the DoD’s Office of Security Review (Case #10-S-1233)
Teledyne Imaging Sensors HAWAII-4RG™
Visible & Infrared Focal Plane Array
The 4096!4096 pixel HAWAII-4RG™ (H4RG) is the next generation, state-of-the-art readout integrated circuit for visible and infrared instrumentation in ground-based and space telescope applications.
• Large (4096!4096 pixel) array with either 10 µm or 15 µm pixel pitch.
• Compatible with Teledyne Imaging Sensors (TIS) HgCdTe infrared (IR) and silicon PIN HyViSI™ visible detectors, providing sensing of any spectral band from soft X-ray to 5.5 "m.
• Substrate-removed HgCdTe enhances the J-band QE, enables response through the visible spectrum (70% QE down to 400nm), and eliminates fluorescence from cosmic radiation absorbed in the substrate, and eliminates fringing in the substrate material.
• Reference rows and columns for common-mode noise rejection.
• Guide window output – windowing with simultaneous science date acquisition of full array. Programmable window which may be read out at up to 5 MHz pixel rate for guiding. Readout is designed to allow interleaved readout of the guide window and the full frame science data.
• Selectable number of outputs (1, 4, 16, 32 or 64) and user-selectable scan directions provide flexibility in data acquisition.
• Built with modularity in mind – the array is 4-side-buttable to allow assembly of large mosaics of 4096!4096 H4RG modules.
• Fully compatible with the TIS SIDECAR™ ASIC Focal Plane Electronics.
For more information, please email Richard Blank at [email protected] or call +1 805 373-4083.
Published Information – Cleared for Public Release by the DoD’s Office of Security Review (Case #10-S-1233)
In general Hawaii family read noise is in the 15 e-‐ range
SIDECAR ASIC
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Digital ControlMicrocontroller for Clock Generation
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• Designed to pair with Hawaii Family, can also interface with CCDs and Monolithic CMOS
• Extremely versaSle, but very complex• Must run cold for low noise, limit is ~5-‐10 e-‐
Non-‐DestrucSve Readout
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• Fowler Sampling drives down read noise• sample the reset N Smes and then sample the signal N Smes (pairs)
• Example is a H2RG HgCdTe array with a 2.5 μm cutoff, operated at 77K
• Requires added Sme• Sme to read a H2RG frame is ~1/2 s• need off chip frame storage
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20
H2RG Si-‐PIN (HyViSI) 1k x 1k x 36 μm pixelsTi X-‐ray sourceRead Noise 17 e-‐ rms 100 kpix/sec @ 140K
Kα 4.51 keV
Kβ 4.93 keV
FourStar Detector ModuleFourStar Back End
Detector module with ASIC cold cards 14Jump to:
FourStar Photo Album
FourStar Detector Module
FourStar Detector ModuleFourStar Back End
3 of the SCA's in the camera module1Jump to:
FourStar Photo Album
FourStar Detector Module
Four Star Camera (Magellan Baade)
21
Four Star focal plane (uses HJK filters)
1.1. Instrument Overview
FourStar provides a 10.9 arcminute square field of view using a 2x2 array of Teledyne HAWAII-2RG focal plane arraysthat provide a plate scale of 0.159 arcsec per pixel. This scale slightly under-samples images under the best seeingconditions at Magellan, which have been measured with the PANIC camera on the Magellan Baade telescope (Martini etal. 2004), to be at best 0.21 arcsec FWHM at Ks in ten minutes and a median of 0.41 arcsec FWHM.
Property Value Notes
Focal Plane Format 4096 x 4096 Four HAWAII-2RG arrays
Pixel Scale 0.159!! 18µm pixels
Field of View 10.9! x 10.9!Sensitivity Ks = 20.6 (Vega) 5" point source in 1hr
Table 1. Key FourStar parameters.
FourStar will be outfitted with a standard suite of JHKs filters. The instrument has two 6-position filter wheels in series,and may accommodate up to 10 filters. The remaining filters will be designed for particular science projects, and willhave narrow (#/$#~100) or medium (#/$#~10) bandwidths.
The instrument will reside at one of the two f/11 Nasmyth ports of the Baade 6.5m telescope. It is about 3 m long andweighs 1200 kg. Most of its weight will be supported by the instrument handling cart which sits on the Nasmythplatform; attachment to the telescope via the guider is used only to locate the instrument in space.
1.2. Science with FourStar
FourStar will be primarily a survey instrument. Its combination of sensitivity, image quality and field of view are ideallysuited to addressing key problems in the study of distant galaxies, star formation, and stellar astrophysics.
Figure 2. An example of the image quality and sensitivity offered by the Magellan Telescopes. This 17 hour Ks-band image of the Hubble Ultra-Deep Field with PANIC (Martini et al. 2004) reaches a limiting depth of Ks = 24mag (Vega). The resolution of the images rivals that of NICMOS on HST. The 25 times larger field of view ofFourStar will make deep surveys over moderate areas practical and will enable studies of massive red galaxies inthe 1 < z < 3 range with high precision and statistical accuracy. The image is from Labbé (2007).
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!"#$%&#'&(!)*&+#,%&-.-/&&-.-/.012
Downloaded from SPIE Digital Library on 21 Mar 2011 to 128.220.144.19. Terms of Use: http://spiedl.org/terms
Four Star Focal Plane
SIDECAR
Visible Light Photometry
22
“Whipple” -‐ HyViSI High Speed Photometer
Time (sec)
H2RG+HiViSI @ 20 Hz (400kpix/sec)Read noise 17 e-‐ rms @ 200K
!
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!
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?%&%!51%)!'3!",%!b%@4%&!*3)!8@'";%&!$'11'#31A!J,%!8=6!)%1'03!'1!*!1"*3)*&)!#@"'(*4!)%1'03!+#&$A!c#!3%?!)%G%4#@$%3"1!*&%!3%%)%):!*3)!",%&%+#&%!?%!,*G%!*11%11%)!",%!J-d!#+!V!+#&!",'1!15E1I1"%$A!J,%!)%"%("#&1!*&%!51%)!'3!G*&'#51!1@*(%!*@=
@4'(*"'#31!'3(45)'30!",%!^5EE4%!8@*(%!J%4%=1(#@%!28/7<6>-!#@%&*"%1!",%!>689!*3)!",%!e*$%1!L%EE!8@*(%!J%4%1(#@%!2MU!+4'0,"!^P-D1!*3)!8/7<6>-1!,*G%!E%%3!)%4'G%&%)!EI!J/89A!>!^M-D!?'",!^IZ'8/!?*1!4*53(,%)!#3!",%!.&E'"'30!6*&E#3!.E1%&G*"#&I:!?,'(,!53+#&"53*"%4I!)')!3#"!*(,'%G%!#&E'"A!L%!(*"%=0#&';%!",%!8/7<6>-!*"!J-d!N!*3)!",%!^P-D!*"!J-d!T_aA!!J,%!F%I!(#$@#3%3"!+#&!",%!/68C!'1!",%!
BCD>:!?,'(,!'1!51%)!+#&!1%G%&*4!+53("'#31A"/"!'1!*!(#$$%&('*44I!*G*'4*E4%!@&#)5("A!8'$'4*&4I:!?%!?'44!51%!+544I!K5*4'+'%)!->]!+#&!",%!)*"*!
Other Examples
23
!"!#$%$&'()*+,)-../$)0 1('$+&'2'()34*5'+5)1$+/.6/)0 7(&)"889
Another 4096 x 4096 pixel IR mosaic comes on-line:;%<)"88=))> ?'6/&)%'5@&).2)ABCD>3))EA'5@)B(;'&<F)C',$)2'$%,)D>G*+,)34*5'+5HI;6.J$*+)1.;&@$6+)7G/$6K*&.6<)L89MNL89M)J'N$%)4./*'().2)A"OP/M&@).J$6*&'.+*%)LDQLD)4./*'().2)A")R)A"OP/S))I17F)P$4'+'F)T?AUF)VAF)VD3OUF)17BOUW.)4.6$)LDQLD)4./*'(/)&.)G$)(.44'//'.+$,)'+)"8!8S)7T3CF)XY3B
Serpens Star Forming Region1 million year old stars
!""#$%$&'()*+,)-../$)0 1('$+&'2'()34*5'+5)1$+/.6/)0 7(&)"889
VISTA Telescope (ESO)
HgCdTe 2K x 2K,20 µm pixels
Mockup of image on sky with Moon
4!4 Mosaic67 Megapixels
!"#$%&'()*+,+'()-#,$&.,
Very Liile Energy in IR
24
An electron-volt (eV)
is extremely small
An electron-volt (eV)
is extremely small
!"#$""%""!&'"( !)*!+ ,""-,"%"./01#2
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15 H2RG2K 2K arrays
63 million pixels
( @A#"#B#:6C"/D";"EA/>/B"<7"VERY 74;11F GB#:6C"/D"HIJK"-9&L" 42"EA/>/B"<7")&L"#$
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!"#$%$&'()*+,)-../$)0 1('$+&'2'()34*5'+5)1$+/.6/)0 7(&)899:
JWST - James Webb Space Telescope15 Teledyne 2K!2K infrared arrays on board (~63 million pixels)
; 3+&$6+*&'.+*%)(.%%*<.6*&'.+; =>")4$&$6)?6'4*6@)4'66.6)*+,)&$++'/)(.A6&)/'B$)/A+/C'$%,; 89!D)%*A+(C).+)E6'*+$)")6.(F$&; -8).6<'&)G!>")4'%%'.+)F4)26.4)H*6&CI
=>"4)4'66.6
/A+/C'$%,
Two 2x2 mosaicsof SWIR 2Kx2K
Two individual MWIR 2Kx2K
NIRCamGJ$*6)3+26*6$,)K*4$6*I
; Wide field imager; Studies morphology of objects
and structure of the universe; U. Arizona / Lockheed Martin
; Spectrograph; Measures chemical composition,
temperature and velocity; European Space Agency / NASA
NIRSpecGJ$*6)3+26*6$,)1?$(&6.56*?CI
1x2 mosaic of MWIR 2Kx2K
FGSGL'+$)MA',*+($)1$+/.6/I
; Acquisition and guiding; Images guide stars for telescope
stabilization; Canadian Space Agency
3 individual MWIR 2Kx2K
H*6&C
NO1P) Q'%%) 2'+,) &C$) R2'6/&) %'5C&S.<T$(&/)*2&$6)&C$)#'5)#*+5U)*+,)Q'%%) /&A,@) C.Q) 5*%*V'$/U) /&*6/)*+,)?%*+$&*6@)/@/&$4/)2.64
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!"#$%$&'()*+,)-../$)0 1('$+&'2'()34*5'+5)1$+/.6/)0 7(&)899:
JWST - James Webb Space Telescope15 Teledyne 2K!2K infrared arrays on board (~63 million pixels)
; 3+&$6+*&'.+*%)(.%%*<.6*&'.+; =>")4$&$6)?6'4*6@)4'66.6)*+,)&$++'/)(.A6&)/'B$)/A+/C'$%,; 89!D)%*A+(C).+)E6'*+$)")6.(F$&; -8).6<'&)G!>")4'%%'.+)F4)26.4)H*6&CI
=>"4)4'66.6
/A+/C'$%,
Two 2x2 mosaicsof SWIR 2Kx2K
Two individual MWIR 2Kx2K
NIRCamGJ$*6)3+26*6$,)K*4$6*I
; Wide field imager; Studies morphology of objects
and structure of the universe; U. Arizona / Lockheed Martin
; Spectrograph; Measures chemical composition,
temperature and velocity; European Space Agency / NASA
NIRSpecGJ$*6)3+26*6$,)1?$(&6.56*?CI
1x2 mosaic of MWIR 2Kx2K
FGSGL'+$)MA',*+($)1$+/.6/I
; Acquisition and guiding; Images guide stars for telescope
stabilization; Canadian Space Agency
3 individual MWIR 2Kx2K
H*6&C
NO1P) Q'%%) 2'+,) &C$) R2'6/&) %'5C&S.<T$(&/)*2&$6)&C$)#'5)#*+5U)*+,)Q'%%) /&A,@) C.Q) 5*%*V'$/U) /&*6/)*+,)?%*+$&*6@)/@/&$4/)2.64
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!"#$%$&'()*+,)-../$)0 1('$+&'2'()34*5'+5)1$+/.6/)0 7(&)899:
JWST - James Webb Space Telescope15 Teledyne 2K!2K infrared arrays on board (~63 million pixels)
; 3+&$6+*&'.+*%)(.%%*<.6*&'.+; =>")4$&$6)?6'4*6@)4'66.6)*+,)&$++'/)(.A6&)/'B$)/A+/C'$%,; 89!D)%*A+(C).+)E6'*+$)")6.(F$&; -8).6<'&)G!>")4'%%'.+)F4)26.4)H*6&CI
=>"4)4'66.6
/A+/C'$%,
Two 2x2 mosaicsof SWIR 2Kx2K
Two individual MWIR 2Kx2K
NIRCamGJ$*6)3+26*6$,)K*4$6*I
; Wide field imager; Studies morphology of objects
and structure of the universe; U. Arizona / Lockheed Martin
; Spectrograph; Measures chemical composition,
temperature and velocity; European Space Agency / NASA
NIRSpecGJ$*6)3+26*6$,)1?$(&6.56*?CI
1x2 mosaic of MWIR 2Kx2K
FGSGL'+$)MA',*+($)1$+/.6/I
; Acquisition and guiding; Images guide stars for telescope
stabilization; Canadian Space Agency
3 individual MWIR 2Kx2K
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J. Pinter, R. Poier, T. Elliot, J. Andrews, J. Tower, M. Grygon, D. Keller, A. Kenter, R. KraI, T. Gauron, P.Doherty
26
• Minimal Arrays• General ScienSfic CMOS Performance• Buried Channel Sub-‐electron Pixels• Metal-‐Insulator-‐Metal (MIM) CMOS Pixel• 1024 x 1024 x 16 um 5TPPD CMOS Imager• Mk x Nk x 10 um 5TPPD CMOS Imagers• High Energy RadiaSon Damage Data
Proc. SPIE 7742-‐11, San Diego 2010
Minimal Arrays
27
•Not a camera on a chip• Sensor is “stripped” of many convenSonal CMOS on-‐chip features leaving• Pixels -‐ 3T, 4T, 5T and 6T• Row and column address decoders and switches
• Pixel drivers -‐ reset, transfer gate, photo gate, global reset, and row select
• Clamping analog circuitry for pixel tesSng• External pixel clocks allow various readout modes -‐ snap, progressive scan, windowed
• External clock amplitudes• External current control for source followers
• External VDD power supplies and ground
Key to Low Noise
28
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• Source follower flicker (1/f) noise ulSmately limits CCD noise floor to a few electrons
• CMOS read noise is limited by “random telegraph signal (RTS) noise”
• Flicker and RTS both originate through the capture and emission of carriers in traps located at or near the Si-‐SiO2 gate interface of the source follower amplifier
• RTS involves a single trap, flicker is the superposiSon of many RTS sources
• The size of the source follower is what determines the noise limit
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• Examples of RTS -‐ output of a 3T pixel as a funcSon of Sme• A single trap changes the drain current by as much as 0.1%
• Two traps give rise to three current states
SIngle trap Two traps
Janesick, Andrews and Elliot SPIE 6276 (2006)
Reducing RTS
29
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30
• Key to low noise is high conversion gain at the pixel• Requires low sense node capacitance (natural in 5TPPD and 6TPG with small sense node). 3TPPD design achieves low sense node capacitance even though the pixel area is large
• Conversion gain up to ~70 μV/e-‐ is achieved• DetecSon efficiency requires thick depleted absorber• For NIR need >10 μm Si• For X-‐ray (6 keV) need even more!• Requires very high resisSvity Si e.g., epitaxial >10,000 Ω-‐cm
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• AcSve isolaSon 3TPPD pixel design• Isolate the diode from the p+ well that defines the pixel, lowers capacitance
• Charge collecSon degradaSon is avoided using n-‐ implants
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31
• Global reset and full frame read out, digiSzed and stored• Signal integraSon• Full frame read out and digiSzed and stored• Reset frame subtracted from the signal frame• dCDS effecSve in removing offset, pixel-‐to-‐pixel offset fixed paiern noise, and reset noise
• Raw video has ~250 e-‐ noise, dCDS signal has ~2.5 e-‐ noise• Raw video noise 250 e-‐ is mainly offset FPN• Reset noise is ~28 e-‐, and source follower is ~2.5 e-‐
• Caveats for dCDS• Need DC coupling and offset must be well controlled• Low frequency noise is not rejected (e.g. 60 Hz)
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32
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•Sarnoff•General contractor•Pixel design
•Chronicle•ReScle layout
•Jazz Semiconductor•Foundry
•CMOS Wafer run (10 wafers) ~$500,000•Layout ~$100,000•Design ~$250,000•Slice/Package/Test ~$100,000
Big Min I
33
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120 bond pads
First light image1536x1536 array8 μm 5TPPD pixels16 port readout
No deferred charge down to one electron
Photon Transfer Curve
34
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Ideal DeviceShot Noise ∝ √Signal
Ideal Real DeviceFixed Paiern Noise (FPN)
at large signals
Remove FPNE.g., IdenScal frame subtracSon
• Need to take out the ADC offset carefully to have the real signal
• Shot noise intercept (noise=1) gives ADC conversion gain (e-‐/DN)
J.R. Janesick -‐ Photon Transfer DN-‐>λ
5 Transistor Pinned Photo Diode Pixel
35
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5TPPD pixel has one charge transfer from the PPD to the Sense NodeVery low capacitance of Sense Node gives high conversion (up to ~70 μV/e-‐)Enables very low read noise
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Photon Transfer Curve (PTC) for Big Min I30,000 e-‐ full well2.5 e-‐ read noise (single read) @ ~100 kpsFrame rate ~0.68 fps
X-‐ray SensiSvity
36
Fe-‐55 -‐> Mn 55 -‐>K-‐α 5895 eV (1620 e-‐)K-‐β 6490 eV (1783 e-‐)
Split events due to charge spreading from conversion site to PPD site. (Substrate bias)
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Coming Soon (through fab)
37
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Many operaSng modes possibleDesigned for high speed >40 fps
200 pins!!!
Package
Big Min II Signal Chain
38
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Pre-‐amp gain 2,3,4,8 V/V
Direct video out for dCDS
Clamp and dual sample and hold for a CDS
aCDS output2 V swing and50 MHz scanning for fast off-‐chip ADC
Low noise, high speed
JAZZ SB VI: Feb, 2011
39
• SB VI: lot of 10 n-‐type 8 inch wafers• ~50 potenSal devices (of each type)/wafer• 5 good wafers reported thus far• Many experimental pixels and implants
Metal-‐ Insulator-‐Metal Capacitor
40
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Downloaded from SPIE Digital Library on 22 Mar 2011 to 128.103.149.52. Terms of Use: http://spiedl.org/terms
• Vary conversion gain of a pixel by changing the sense node capacitance
• Variable dynamic range and read out noise
• Test pixel with LED illuminaSon• Two MIM states in a 24 μm 3TPPD pixel
MIM Pixel Performance
41
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Fe55 X-‐rays
• Two MIM gain states response to Fe55 X-‐rays
• Photon Transfer Curves in DN and electrons• NoSce that the read noise in DN is essenSally constant because the read noise is generated by the pixel’s source follower, downstream of the MIM and sense node
Buried vs Surface Channel MOSFET
42
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Sub ElectronRead Noise
43
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“Self Triggered” Pixels
44
• 5TPPD pixel with high gain• Add on pixel aCDS (rapid reset and reads)?• Add low level discriminator• Set polling flag in X and/or Y• No frame reads, only row and/or column for set pixels• Long intervals between global resets• Goal -‐ sub millisec Sme resoluSon while maintaining performance• Preliminary test pixels in SB VI minimal -‐ Chandra
Beyond the Reticle Limit
45
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• CMOS foundry limitaSons on the size of a single reScle (art work mask) is about 21 x 21 mm
• Limits the size of a single device• e.g., BigMin II: 1k x 16 μm
•Mask alignment is very good• Allows traces to line-‐up so that larger arrays can be “sStched” together as shown
• Reduces cost by reuse of masks
Next Imager 4k x 4k
46
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The Limit???
47
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RadiaSon Hard
48
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RadiaSon Hard
49
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Summary
50
• CMOS imaging is real• For IR hybrid devices are needed• For X-‐rays thick Si is okay• CMOS readout noise is geVng beier– Hybrids achieve ~15 e-‐ single samples–Monolithics achieve ~2 e-‐ single samples
• Readout speed is geVng very good– 100’s to 1000’s frames/sec – X-‐ray “self triggered” pixels possible
• RadiaSon Hard• Large formats possible
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