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REV DESCRIPTION DATE PREP APPD
C CO-29999 4/2/19 SM LT/DF
Oscillator Specification, Hybrid VCXO ACMOS, 9x14 mm, J-Lead
MOUNT HOLLY SPRINGS, PA 17065 Hi-Rel Standard
THE RECORD OF APPROVAL FOR THIS
DOCUMENT IS MAINTAINED ELECTRONICALLY
WITHIN THE ERP SYSTEM
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MICROCHIP CONFIDENTIAL
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1. SCOPE
1.1 General. This specification defines the design, assembly and functional evaluation of high
reliability, VCXO’s produced by Vectron. Devices delivered to this specification represent the
standardized Parts, Materials and Processes (PMP) Program developed, implemented and
certified for advanced applications and extended environments.
1.2 Applications Overview. The designs represented by these products were primarily developed
for the MIL-Aerospace community. The lesser Design Pedigrees and Screening Options
imbedded within DOC206218 bridge the gap between Space and COTS hardware by providing
custom hardware with measures of mechanical, assembly and reliability assurance needed for
Military or Ruggedized COTS environments.
2. APPLICABLE DOCUMENTS
2.1 Specifications and Standards. The following specifications and standards form a part of this
document to the extent specified herein. The issue currently in effect on the date of quotation
will be the product baseline, unless otherwise specified. In the event of conflict between the
texts of any references cited herein, the text of this document shall take precedence.
Military
MIL-PRF-55310 Oscillators, Crystal Controlled, General Specification For
MIL-PRF-38534 Hybrid Microcircuits, General Specification For
Standards
MIL-STD-202 Test Method Standard, Electronic and Electrical Component Parts
MIL-STD-883 Test Methods and Procedures for Microelectronics
Other
DOC206251 Test Specification, DOC206218 Hybrids, Hi-Rel Standard
QSP-90100 Quality Systems Manual, Vectron
DOC011627 Identification Common Documents, Materials and Processes, Hi-Rel XO
DOC203982 DPA Specification
QSP-91502 Procedure for Electrostatic Discharge Precautions
3. GENERAL REQUIREMENTS
3.1 Classification. All devices delivered to this specification are of hybrid technology conforming
to Type 2, Class 2 of MIL-PRF-55310. Primarily developed as a Class S equivalent
specification, options are imbedded within it to also produce Class B, Engineering Model and
Ruggedized COTS devices. Devices carry a Class 2 ESDS classification per MIL-PRF-38534.
3.2 Item Identification. See paragraph 7.1 for part number configuration.
3.3 Absolute Maximum Ratings.
a. Supply Voltage Range (VCC): -0.5Vdc to +7.0Vdc
b. Storage Temperature Range (TSTG): -65°C to +125°C
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c. Junction Temperature (TJ): +175°C
d. Lead Temperature (soldering, 10 seconds): +300°C
e. Output Source/Sink Current: ±70 mA
3.4 Design, Parts, Materials and Processes, Assembly, Inspection and Test.
3.4.1 Design. The ruggedized designs implemented for these devices are proven in military and
space applications under extreme environments. The design utilizes a 4-point crystal mount in
compliment with Established Reliability (MIL-ER) componentry. When specified, radiation
hardening up to 100krad(Si) (RHA level R) can be included without altering the device’s
internal topography.
3.4.1.1 Design and Configuration Stability. Barring changes to improve performance by reselecting
passive chip component values to offset component tolerances, there will not be fundamental
changes to the design or assembly or parts, materials and processes after first product delivery
of that item without written approval from the procuring activity.
3.4.1.2 Environmental Integrity. Designs have passed the environmental qualification levels of MIL-
PRF-55310.
3.4.2 Prohibited Parts, Materials and Processes. The items listed are prohibited for use in high
reliability devices produced to this specification.
a. Gold metallization of package elements without a barrier metal.
b. Zinc chromate as a finish.
c. Cadmium, zinc, or pure tin external or internal to the device.
d. Plastic encapsulated semiconductor devices.
e. Ultrasonically cleaned electronic parts.
f. Heterojunction Bipolar Transistor (HBT) technology.
g. ‘getter’ materials
3.4.3 Assembly. Manufacturing utilizes standardized procedures, processes and verification methods
to produce MIL-PRF-55310 Class S / MIL-PRF-38534 Class K equivalent devices. MIL-PRF-
38534 Group B Option 1 in-line inspection is included on radiation hardened part numbers to
further verify lot pedigree. Traceability of all components and production lots are in
accordance with MIL-PRF-38534, as a minimum. Tabulated records are provided as a part of
the deliverable data package. Devices are handled in accordance with Vectron document QSP-
91502 (Procedure for Electrostatic Discharge Precautions).
3.4.4 Inspection. The inspection requirements of MIL-PRF-55310 apply to all devices delivered to
this document. Inspection conditions and standards are documented in accordance with the
Quality Assurance, ISO-9001 and AS9100 derived, System of QSP-90100.
3.4.5 Test. The Screening test matrix of Table 4 is tailored for selectable-combination testing to
eliminate costs associated with the development/maintenance of device-specific documentation
packages while maintaining performance integrity.
3.4.6 Marking. Device marking shall be in accordance with the requirements of MIL-PRF-55310.
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3.4.7 Ruggedized COTS Design Implementation. Design Pedigree “D” devices (see ¶ 5.2) use the
same robust designs found in the other device pedigrees. They do not include the provisions of
traceability or the Class-qualified componentry noted in paragraphs 3.4.3 and 4.1.
4. DETAIL REQUIREMENTS
4.1 Components
4.1.1 Crystals. Cultured quartz crystal resonators are used to provide the selected frequency for the
devices. The optional use of Premium Q swept quartz can, because of its processing to remove
impurities, be specified to minimize frequency drift when operating in radiation environments.
In accordance with MIL-PRF-55310, the manufacturer has a documented crystal element
evaluation program.
4.1.2 Passive Components. Passive components will have the same pedigree as the die specified in
paragraph 7.1. Lot evaluations are in accordance with MIL-PRF-38534 or Enhanced Element
Evaluation as specified in Table 7.
4.1.3 Class S Microcircuits. Devices are assembled with a varactor diode and an ACMOS chip
which are procured from wafer lots that have passed MIL-PRF-38534 Class K Lot Acceptance
Tests for Class S devices. The prescribed die carries a Class 2 ESDS classification in
accordance with MIL-PRF-38534. When optionally specified, further testing in accordance
with MIL-PRF-55310 and MIL-PRF-38534 is performed for radiation hardness assurance and
for Enhanced Element Evaluation as specified in Table 6. Those microcircuits, identified by a
unique part number, are certified for 100krad(Si) total ionizing dose (TID), RHA level R (2X
minimum margin). NSC, as the original 54ACT designer, rates the SEU LET at >40 MeV and
SEL at >120MeV for the FACT™ family (AN-932). Vectron has conducted additional SEE
testing in 2008 to verify this performance since our lot wafer testing does not include these
parameters and determinations. In addition, the varactor diode is considered insensitive to TID
and Single Event Effects.
4.1.3.1 Class B Microcircuits. When specified, microcircuits assembled into OS-68338 Design
Pedigree letters “B” and “C” devices (¶ 5.2a) are procured from wafer lots that have passed
MIL-PRF-55310 element evaluations for Class B devices.
4.1.4 Packages. Packages are procured that meet the construction, lead materials and finishes as
specified in MIL-PRF-55310. All leads are Kovar with gold plating over a nickel underplate.
Package lots are upscreened in accordance with the requirements of MIL-PRF-38534 as
applicable. Vectron will not perform Salt Spray testing as part of MIL-PRF-55310 Group
C/Qualification or MIL-PRF-38534 Package Element Evaluation.
4.1.5 Traceability and Homogeneity. All design pedigrees except option D have active device lots
that are traceable to the manufacturer’s individual wafer; all other elements and materials are
traceable to their manufacturer and incoming inspection lots. Design pedigrees E, R, V and X
have homogeneous material. In addition, swept quartz crystals are traceable to the quartz bar
and the processing details of the autoclave lot, as applicable.
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4.1.6 Enhanced Element Evaluation. When Design Pedigree Option “E” is specified, active and
passive devices with Enhanced Element Evaluation as listed in Table 5, 6 and 7 shall be
implemented for the highest reliability preference.
4.2 Mechanical.
4.2.1 Package Outline. See Figure 1.
4.2.2 Thermal Characteristics. The worst case thermal characteristics are found in Table 3.
4.3 Electrical.
4.3.1 Input Power. Devices are available with an input voltage of either +5.0 Vdc (±5%) or +3.3 Vdc
(±5%). Current is measured, no load, at maximum rated operating voltage.
4.3.2 Temperature Range. Operating range is -40°C to +85°C.
4.3.3 Absolute Pull Range. Absolute pull range is defined as the minimum guaranteed amount the
VCXO can be varied about the center frequency (fo). It accounts for degradations including
temperature stability (-40°C to +85°C), aging (15 years), radiation effects, power supply
variations (±5%) and load variations (±10%).
4.3.4 Frequency Aging. When tested in accordance with MIL-PRF-55310 Group B inspection, the
15-year aging projection shall not cause the minimum APR limit to be exceeded.
4.3.5 Operating Characteristics. Symmetrical square wave limits are dependent on the device
frequency and are in accordance with Table 1. Waveform measurement points and logic limits
are in accordance with MIL-PRF-55310. Start-up time is 10.0 msec. maximum.
4.3.6 Output Load. ACMOS (10kΩ, 15pF) test loads are in accordance with MIL-PRF-55310.
5. QUALITY ASSURANCE PROVISIONS AND VERIFICATION
5.1 Verification and Test. Device lots shall be tested prior to delivery in accordance with the
applicable Screening Option letter as stated by the 15th character of the part number. Table 4
tests are conducted in the order shown and annotated on the appropriate process travelers and
data sheets of the governing test procedure. For devices that require Screening Options that
include MIL-PRF-55310 Group A testing, the Post-Burn-In Electrical Test and the Group A
Electrical Test are combined into one operation.
5.1.1 Screening Options. The Screening Options, by letter, are summarized as:
A Modified MIL-PRF-38534 Class K
B Modified MIL-PRF-55310 Class B Screening & Group A Quality Conformance
Inspection (QCI)
C Modified MIL-PRF-55310 (Rev E) Class S Screening & Group A QCI
D Modified MIL-PRF-38534 Class K with Group B Aging
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E Modified MIL-PRF-55310 Class B Screening, Groups A & B QCI
F Modified MIL-PRF-55310 (Rev E) Class S Screening, Groups A & B QCI
G Modified MIL-PRF-55310 Class B Screening & Post Burn-in Nominal
Electricals
S MIL-PRF-55310 (Rev F) Class S Screening & Groups A & B QCI
X Engineering Model (EM)
5.2 Optional Design, Test and Data Parameters. The following is a list of design, assembly,
inspection and test options that can be selected or added by purchase order request.
a. Design Pedigree (choose one as the 5th character in the part number):
(E) Enhanced Element Evaluation, 100krad Class S die, Premium Q Swept Quartz
(R) Hi-Rel design w/ 100krad Class S die, Premium Q Swept Quartz
(V) Hi-Rel design w/ 100krad Class S die, Non-Swept Quartz
(X) Hi-Rel design w/ Non-Swept Quartz, Class S die
(B) Hi-Rel design w/ Swept Quartz, Class B die
(C) Hi-Rel design w/ Non-Swept Quartz, Class B die
(D) Hi-Rel design w/ Non-Swept Quartz and commercial grade components
b. Input Voltage/APR, (L) for +3.3V/±30ppm, (N) for +5.0V/±30ppm and (W) for
+5.0V/±50ppm as the 14th character
c. Frequency-Temperature Slew Test
d. Radiographic Inspection
e. Group C Inspection: In accordance with MIL-PRF-55310, Rev E (requires 8 destruct
specimens)
f. Group C Inspection: MIL-PRF-55310, Rev F (requires 8 destruct specimens, includes
Random Vibration, MIL-STD-883, Method 1014 Leak Test and Life Test)
g. Group C Inspection: In accordance with MIL-PRF-38534, Table C-Xc, Condition PI
(requires 8 destruct specimens – 5 pc. Life, 3 pc. RGA). Subgroup 1 fine leak test to be
performed per MIL-STD-202, Method 112, Condition C.
h. Internal Water-Vapor Content (RGA) samples and test performance
i. MTBF Reliability Calculations
j. Worst Case/Derating Analysis: MIL-HDBK-1547 with Tj Max = +105°C;
Derated Maximum Operating Temp = Tj Max - ∆Tj
k. Deliverable Process Identification Documentation (PID)
l. Customer Source Inspection (pre-crystal mount pre-cap, post-crystal mount pre-cap and
final). Due to components being mounted underneath the crystal blank, this model
number should be considered for pre-crystal mount pre-cap inspection.
m. Destruct Physical Analysis (DPA): MIL-STD-1580 with exceptions as specified in
Vectron DOC203982.
n. Qualification: In accordance with MIL-PRF-55310, Table IV (requires 11 destruct
specimens).
o. Qualification: In accordance with EEE-INST-002, Section C4, Table 3, Level 1 or 2
(requires 11 destruct specimens)
p. High Resolution Digital Pre-Cap Photographs (20 Megapixels minimum)
q. Hot solder dip of leads with Sn63/Pb37 solder prior to shipping
5.2.1 NASA EEE-INST-002. A combination of Design Pedigree R, Option S Screening, and
Qualification per EEE-INST-002, Section C4, Table 3, meet the requirements of Level 1
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device reliability. A combination of Design Pedigree B, Option S Screening, and Qualification
per EEE-INST-002, Section C4, Table 3, meet the requirements of Level 2 device reliability.
5.3 Test Conditions. Unless otherwise stated herein, inspections are performed in accordance with
those specified in MIL-PRF-55310 and MIL-PRF-38534, in that order. Process travelers
identify the applicable methods, conditions and procedures to be used. Examples of electrical
test procedures that correspond to MIL-PRF-55310 requirements are shown in Table 2.
5.4 Special Test and Description.
5.4.1 Frequency-Temperature Slew. Frequency-Temperature Slew Test has been developed as an
indicator of higher than normal internal water vapor content. The incremental temperature
sweep from +85°C to -40°C and back to +85°C records output frequency fluctuations
emulating the mass loading of moisture deposited on the crystal blank surface. Though not
replacing a customer’s internal water-vapor content (RGA) requirement, confidence is
increased without destructively testing otherwise good devices.
5.5 Deliverable Data. The manufacturer supplies the following data, as a minimum, with each lot
of devices (except devices with Screening Option X):
a. Completed assembly and screening lot travelers, including rework history and
Certificate of Conformance.
b. Electrical test variables data, identified by unique serial number.
c. Frequency-Temperature Slew plots, Radiographic films, Group C data and RGA data
as required by purchase order.
d. Traceability, component LAT, enclosure LAT and RLAT (if specifically requested on
the purchase order).
5.6 Discrepant Material. All MRB authority resides with the procuring activity.
5.7 Failure Analysis. Any catastrophic failure (no clocking, no current) at Post Burn-In or after
will be evaluated for root cause. The customer will be notified after occurrence and upon
completion of the evaluation.
6. PREPARATION FOR DELIVERY
6.1 Packaging. Devices will be packaged in a manner that prevents handling and transit damage
during shipping. Devices will be handled in accordance with MIL-STD-1686 for Class 1
devices.
7. ORDERING INFORMATION
7.1 Ordering Part Number. The ordering part number is made up of an alphanumeric series of
15 characters. Design-affected product options, identified by the parenthetic letter on the
Optional Parameters list (¶ 5.2a and b), are included within the device part number.
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The Part Number breakdown is described as:
5116 R 10M00000 L F
Mmmm\
7.1.1 Model Number. The device model number is the four (4) digit number 5116.
7.1.2 Design Pedigree. Class S variants correspond to either letter “E”, “R”, “V” or “X” and are
described in paragraph 5.2a. Class B variants correspond to either letter “B” or “C” and are
described in paragraph 5.2a. Ruggedized COTS, using commercial grade components,
corresponds to letter “D”.
7.1.3 Output Frequency. The nominal output frequency is expressed in the format as specified in
MIL-PRF-55310 utilizing eight (8) characters.
7.1.4 Input Voltage (APR). “L” for +3.3V (±30ppm), “N” for +5.0V (±30ppm) and “W” for +5.0V
(±50ppm) as the 14th character.
7.1.5 Screening Options. The 15th character is the Screening Option (letter A thru G, S or X) selected
from Table 4.
7.2 Optional Design, Test and Data Parameters. Optional test and documentation requirements
shall be specified by separate purchase order line items (as listed in ¶ 5.2c thru q).
Model # (Table 1) Screening Option
per Table 5, 5.1.1
Design Pedigree
E = Enhanced Element Evaluation,
100krad Class S die, Swept Quartz
R = 100krad Class S die, Swept
Quartz
V = 100krad Class S die, Non-Swept
Quartz
X = Class S die, Non-Swept Quartz
B = Class B die, Swept Quartz
C = Class B die, Non-Swept Quartz
D = Ruggedized COTS: Commercial
Grade Components, Non-Swept
Quartz
Input Voltage/APR
L= +3.3V, APR ±30 ppm
N= +5.0V, APR ±30 ppm
W=+5.0V, APR ±50 ppm
Frequency
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1/. Waveform measurement points and logic limits are in accordance with MIL-PRF-55310.
TABLE 1 - Electrical Performance Characteristics
OPERATION LISTING REQUIREMENTS AND
CONDITIONS
@ all Electrical Tests
Input Current (no load) MIL-PRF-55310, Para 4.8.5.1
Initial Accuracy @ Ref. Temp. MIL-PRF-55310, Para 4.8.6
Output Logic Voltage Levels MIL-PRF-55310, Para 4.8.21.3
Rise and Fall Times MIL-PRF-55310, Para 4.8.22
Duty Cycle MIL-PRF-55310, Para 4.8.23
Frequency Deviation MIL-PRF-55310, Para 4.8.31.1
Linearity MIL-PRF-55310, Para 4.8.31.5
Nominal conditions only
@ Post Burn-In Electrical only
Overvoltage Survivability MIL-PRF-55310, Para 4.8.4
Initial Freq. – Temp. Accuracy MIL-PRF-55310, Para 4.8.10.1
Freq. – Voltage Tolerance MIL-PRF-55310, Para 4.8.14
Start-up Time (fast/slow start) MIL-PRF-55310, Para 4.8.29
TABLE 2 - Electrical Test Parameters
Frequency Range: 1.0 MHz to 100.0 MHz
Temperature Range: -40°C to +85°C
Power Supply (Vcc): +3.3Vdc ±5% or +5.0Vdc ±5%
Absolute Pull Range: ±30 ppm or ±50 ppm (+/-30 ppm only for +3.3Vdc)
Control Voltage (Vc) Range: 0.3V to +3.0V with Vcc = +3.3V
Control Voltage (Vc) Range: 0.5V to +4.5V with Vcc = +5.0V
Slope: Positive
Linearity: 10% max.
F vs. V Gain: 45 ppm/V min. to 105 ppm/V max.
Start-up Time: 10.0 ms max.
Frequency
Range
(MHz)
Current (mA)
(max. no load)
Rise / Fall
Times 1/
(ns max.)
Duty Cycle 1/
(%)
+5.25V +3.465V
1 – 15 15 8 10 45 to 55
>15 – 40 20 15 5 40 to 60
>40 – 60 35 20 5 40 to 60
>60 – 85 45 25 3 40 to 60
>85 – 100 55 35 3 40 to 60
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Model # Typical Thermal
Resistance
Junction to Case
θjc (°C / W)
∆ Junction Temp.
Tj (°C @ max. Icc)
Typical Weight
(Grams)
5116 18.77 5.42 1.2
Note: The maximum power from Table 2 is used to calculate the worst case ∆ Junction
Temperature.
TABLE 3 - Typical Thermal Characteristics and Weight
Table 3a – Typical Phase Noise at 16MHz, 3.3V
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Table 3b – Typical Phase Noise at 16MHz, 5.0V
Table 3c – Typical Phase Noise at 50MHz, 3.3V
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Table 3d – Typical Phase Noise at 66MHz, 3.3V
Table 3e – Typical Phase Noise at 80MHz, 3.3V
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Table 3f – Typical Phase Noise at 100MHz, 3.3V
Table 3g – Typical Phase Noise at 100MHz, 5.
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LEGEND: X = Required, NR = Not Required, AR = As Required
TABLE 4 - Test Matrix
1/ Performed at package LAT. Include LAT data sheet
2/ When specified, RGA samples will be removed from the lot after completion of this operation. Use of Screening failures require customer concurrence.
3/ By customer request, the Aging test may be terminated after 15 days if the measured aging rate is less than one-half the specified aging rate, as described in paragraph
4.3.4.1 herein. Must be explicitly stated on the customer PO.
OPN.
NO.
OPERATION LISTING REQUIREMENTS AND CONDITIONS Option
A
Option
B
Option
C
Option
D
Option
E
Option
F
Option
G
Option
S
Option
X
SCREENING MIL Class Similarity
(MIL-PRF-55310, Class S/B or MIL-PRF-38534, Class K)
K
100%
B-
100%
S-
100%
K+
100%
B
100%
S (Rev E)
100%
100%
S (Rev F)
100%
EM
100%
1 Non-Destruct Bond Pull MIL-STD-883, Meth 2023 X NR X X NR X NR X NR
2 Internal Visual MIL-STD-883, Meth 2017 Class K,
Meth 2032 Class K
X X X X X X X X X
3 Stabilization (Vacuum) Bake MIL-STD-883, Meth 1008, Cond C, 150°C X
48 hrs.
X
24 hrs.
X
48 hrs.
X
48 hrs.
X
24 hrs.
X
48 hrs.
X
24 hrs.
X
48 hrs.
X
24 hrs.
4
Thermal Shock MIL-STD-883, Meth 1011, Cond A NR NR X NR NR X NR X NR
5 Temperature Cycle MIL-STD-883, Meth 1010, Cond. B (except Option S),
10 cycles min.
X X X X X X X X
Cond. C
NR
6 Constant Acceleration MIL-STD-883, Meth 2001, Cond A,
Y1 plane only, 5000 g’s
X X X X X X X X NR
7 Particle Impact Noise Detection MIL-STD-883, Meth 2020, Cond B (except Option S) X X
X
X
X
X
NR X
Cond. A
X
8 Electrical Testing, Pre Burn-In
Perform tests in Table 3. Nominal Vcc, nominal temperature X X X X X X X X X
9 1st Burn-In
MIL-STD-883, Meth 1015, Condition B X
160 hrs.
X
160 hrs.
X
240 hrs.
X
160 hrs.
X
160 hrs.
X
240 hrs.
X
160 hrs.
X
240 hrs.
NR
10 Electrical Testing, Intermediate
Perform tests in Table 3. Nominal Vcc, nominal temperature X NR NR X NR NR NR NR NR
11 2nd Burn-In
MIL-STD-883, Meth 1015, Condition B X
160 hrs.
NR NR X
160 hrs.
NR NR NR NR NR
12 Freq-Temp Slew Test
Operating temp. range, frequency plotted at 1.0°C steps AR AR AR AR AR AR NR AR NR
13 Electrical Testing, Post Burn-In
(Group A)
Perform tests in Table 3. Nominal Vcc & extremes, nominal
temperature & extremes
X X X X X X X
nom. Vcc
X NR
14 Seal: Fine Leak
Seal: Gross Leak
MIL-STD-202, Meth 112, Cond C (5 x 10-8 atm cc/sec max)
MIL-STD-202, Meth 112, Cond D
X X X X X X X NR X
15 Seal: Fine Leak
Seal: Gross Leak
MIL-STD-883, Meth 1014, Cond A2 or B1
MIL-STD-883, Meth 1014, Cond B2 or B3
NR NR NR NR NR NR NR X NR
16
Radiographic Inspection MIL-STD-883, Meth 2012 X AR AR X AR X NR X NR
17 Solderability MIL-STD-883, Meth 2003 1/ 1/ 1/ 1/ 1/ 1/ 1/ 1/ NR
18 External Visual & Mechanical MIL-STD-883, Meth 2009 X 2/ X 2/ X 2/ X 2/ X 2/ X 2/ X 2/ X 2/ X 2/
19
Aging, 30 Day 3/
(M55310 Group B)
MIL-PRF-55310, para. 4.8.35.1 NR NR NR X 13 pcs. X NR X NR
20 Group C Inspection (optional) See Para 5.2 herein for details of supplier recommended
Group C Inspection options
5.2(g) 5.2(e) 5.2(e) 5.2(g) 5.2(e) 5.2(e) 5.2(e) 5.2(f) NR
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Subgroup Clas
s Test Mil-STD-750 Quantity
Mil-PRF-
38534
Reference
K Method Condition (accept number) Paragraph
1 X
Element Electrical A. May perform at wafer level
B. All failures shall be removed
from the lot
Perform at room
ambient 100% C.3.3.1
2 X Element Visual 2069, 2070,
2072, 2073 100% C.3.3.2
3 X Internal Visual
2069, 2070,
2072, 2073,
2074
10(0) or 22(0)
(Notes 1 & 2)
C.3.3.3
C.3.3.4.2
4 X Temperature Cycling 1051 C C.3.3.3
X Surge Current
(when applicable)
4066 A or B as
specified
X Constant Acceleration 2006
2001
Y1 direction
20,000 G /
10,000 G for
Pd ≥ 10W
10(0)
22(0)
(See Notes 1 & 2)
X Interim Electrical C.3.3.4.3
X High Temperature
Reverse Bias (HTRB)
1039
1042
1038
A
B
A
X Interim Electrical & Delta
Complete
Within 16 hrs
of
HTRB
completion
X Burn-In 240 hours
1039, 1042
1038
1040
B
A
B
X Post Burn-In Electrical C.3.3.4.3
X Steady State Life
1000 hours
1026
1037
1042
1048
X Final Electrical C.3.3.4.3
5 X Wire Bond Evaluation 2011 10(0) wires or
20(1) wires
C.3.3.3
C.3.3.5
6 X SEM 2018
2077
See method 2018
or 2077 & Note 2 C.3.3.6
NOTES:
1. Subgroups 3, 4, & 5 shall be performed on a sample of 10 die if the wafer lot is from a QPL/QML line. If the die are
from commercial wafer lots, then the sample size shall be 22 die. Die from QPL/QML wafers not meeting the QPL/QML
requirements and downgraded to commercial grade shall not be used.
2. Subgroups 3, 4 & 5 shall be performed in the order listed in Table 5. Subgroup 6 may be performed at any time.
TABLE 5 - SEMICONDUCTOR ENHANCED ELEMENT EVALUATION
SIZE CODE IDENT NO.
UNSPECIFIED TOLERANCES DWG NO. REV. SHEET
A 00136 N/A DOC206218 C 16 MICROCHIP CONFIDENTIAL
Subgroup Class Test Mil-STD-883 Quantity
Mil-PRF-
38534
Reference
K Method Condition (accept number) Paragraph
1 X
Element Electrical A. May perform at wafer level
B. All failures shall be removed
from the lot
C. Perform at room ambient
100% C.3.3.1
2 X Element Visual 2010 100% C.3.3.2
3 X Internal Visual 2010 10(0) or 22(0)
C.3.3.3
C.3.3.4.2
4 X Temperature Cycling 1010 C C.3.3.3
X Mechanical Shock
or
Constant Acceleration
2002
2001
B, Y1
direction
3,000 G, Y1
direction
10(0)
22(0)
X Interim Electrical C.3.3.4.3
X Burn-In 1015
240 hours
minimum at
+125°C
X Post Burn-In Electrical C.3.3.4.3
X Steady State Life 1005
X Final Electrical C.3.3.4.3
5 X Wire Bond Evaluation 2011 10(0) wires or
20(1) wires
C.3.3.3
C.3.3.5
6 X SEM 2018 See method 2018 C.3.3.6
Notes:
Subgroups 3, 4, & 5 shall be performed on a sample of 10 die if the wafer lot is from a QPL/QML line. If the die are
from commercial wafer lots, then the sample size shall be 22 die.
TABLE 6 - MICROCIRCUIT ENHANCED ELEMENT EVALUATION
Parts Type Test Requirement Sample size Allowable Reject(s)
SIZE CODE IDENT NO.
UNSPECIFIED TOLERANCES DWG NO. REV. SHEET
A 00136 N/A DOC206218 C 17 MICROCHIP CONFIDENTIAL
Paragraph
Ceramic Capacitors
M55681 FRL S or
M123 (chips)
N/A N/A N/A N/A
DSCC Dwg, COTS Ultrasonic scan or
CSAM, Except
single-layer ceramic
capacitors (SLCC’s)
M123 100% N/A
Group A M123 M123 M123
Group B, Subgroups
1 & 2 if part is used
in <10V applications
or Subgroups 1 & 3
if part is used in
>10V applications
M123 M123 M123
Resistors
M55342 FRL R or S N/A N/A N/A N/A
Inductors (See Paragraph 4.1.2)
Custom closed
magnetics
Group A Mil-Std-981 Mil-Std-981 Mil-Std-981
Group B Mil-Std-981 Mil-Std-981 Mil-Std-981
Magnetics, Closed Construction Leaded and Surface Mount (transformers, inductors, coils) (Note: Stacking magnetics
shall be qualified and the effects of the long term performance of the hybrids verified. When stacking magnetics, a
repeat of the thermal cycling plus electrical measurements as specified in Group A of Mil-Std-981. Design,
workmanship and materials/processes shall conform to MIL-STD-981 requirements).
Magnetics, Open Construction are unencapsulated and unpotted self-leaded parts consisting of magnet wire wound
around a magnetic core. These parts are fully visually inspectable. Open construction magnetics shall be subjected to
100% electrical measurements and visual inspection per Mil-Std-981.
TABLE 7: PASSIVE COMPONENT ENHANCED ELEMENT EVALUATION
SIZE CODE IDENT NO.
UNSPECIFIED TOLERANCES DWG NO. REV. SHEET
A 00136 N/A DOC206218 C 18 MICROCHIP CONFIDENTIAL
Pin Connections
1 Control Voltage
2 GND/Case
3 Output
4 Vcc
FIGURE 1
Model 5116 Package Outline
SIZE CODE IDENT NO.
UNSPECIFIED TOLERANCES DWG NO. REV. SHEET
A 00136 N/A DOC206218 C 19 MICROCHIP CONFIDENTIAL
APPENDIX A
Recommended Land Pattern
Model 5116