wp4 dissemination, cost calculation and exploitation final meeting review, 23-10-2015, paris
TRANSCRIPT
WP4Dissemination, cost calculation and exploitation
Final Meeting Review, 23-10-2015, Paris
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WP goals
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o Pattern with various techniques o of litho and etcho periodic and non-periodic
o Characterise the patternso Find how to passivate them
WP2
o Model various nanopatterned structures and extract their Jsc
o Give guidelines of optimal structures
o Gather reliable data for modelso Define benchmark structures
WP1
o Fabricate thin c-Si filmso Integrate nanopatterns into solar cells
and reach record Jsc valueso Demonstrate upscalability
WP3o Evaluate industrialiability of
nanopatterningo Evaluate their costs and life cycleo Disseminate results and protect IP
WP4
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o Task 4.1 Dissemination, supervisor Imeco Task 4.2 Cost calculations, supervisor Totalo Task 4.3 Exploitation, supervisor Total
WP4
WP tasks and people to achieve themImec Valérie, Ounsi, Christos
INL Christian, Regis, Loïc, Alain
LPICM Pere, Wanghua
Obducat Jiawook, Ki-Dong
Chalmers Ines, Alexander
Total Patricia, Fitzgerald, Alan, Loïc
Outline
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1. Dissemination
2. Technico-economical study
2.1. Cost calculation
2.2. Life Cycle Assessement
3. Exploitation
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All partners
WP4- Dissemination, cost calculation and exploitation.
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Task 4.1 : Dissemination
(Imec)
Scientific conferences and publications to disseminate project results via
both academic and industrial channels
Large-media communication
to provide international visibility, including in a non-
specialised audience.
Task 4.2 : Cost calculation (Total)
Cost calculation To evaluate both the saving and the supplementary costs
induced.
Life cycle assessment To evaluate the environmental
footprint of implementing the project.
Task 4.3 : Exploitation
(Total)
Identification of routes of exploitation Evaluation of industrialization
option and development results obtained.
IP protection after careful assessment of
the merits of inventions created during the project
Dissemination
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Task 4.1 Disseminati on
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o Good visibility of the project with 55% of the publication in conference : 5 Invited Oral and 1 selected for Highlights EUPVSEC
o Numerical simulation and Nanopatterning have been the most prolific WP
o Quality of the interraction between partners : Mainly 1 partner publication but consistent number of publication shared with several partners.
Pending2 (4%)
Large Media1 (2%)
Proceedings5 (11%)
Article13 (28%)
Poster10 (22%)
Oral15 (33%)
WP43 (4%)
WP321 (27%)
WP230 (38%)
WP125 (32%)
DISSEMINATION LIST
7 Part.6 (13%)
6 Part.1 (2%)
3 Part.2 (4%)
2 Part.10 (22%)
1 Part.26 (58%)
Distribution of the 49 publications :
Publication categories Work Package Nb of involved partners
Technico-Economical study
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Task 4.2: Cost calculati on and life cycle assesment
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Objectives: Evaluate the impact of new process(es)
Process modification• Thin layer processing• Patterning • Supplier equipment maturity• Module integration
Lower Si consomption• no wafer (ingot, cutting,…)
?
Objectives : Evaluate the impact of new process(es) at the cell fabrication scale
Decrease the cost
Increase the cost ?
Efficiency
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Benchmark
Task 4.2: Cost calculati on and life cycle assesment
c-Si Wafer based Thin c-Si layer based PhotoNvoltaics
Panasonic 1366 Technologies
Panasonic Solexel Crystal Solar
Efficiency 25.6 % 17% 24.7% 20.62% 16% 15-22 %
Surface (cm²) 143.7 243.4 101.8 243.4Thickness (µm) 200 98 35 50 1-40Throughput 3600*
Wf/h3.2 MW/y > 300 Wf/h
Cost @ Cell $ 1.4 /cell (Cell 2011)
$ 0.08/W (Cell Target)
$ 0.52/W (Cell,Achieved)
Cost @ Module $ 0.4/W $ 0.50/W (Module Target)
$ 0.42/W (Module)
$ 0.40/W (Module Target)
* Fairly standard throughput
Competitive field with some relevant results not any more at a lab research stage
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Distributi on of cost items in PV Module
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o Low potential cost reduction : o The price reduction we expect by using thinner layer have a potential impact on only 33%
of the cost of the product
o Constent decrease of the the Poly Si price from 67 US$/kg (2010) down to 16.6 US$/kg (04-2014)
o Improvement in reducing sawing waste by using wires with smaller diameter
ITRPV 2015
Short margin on cost reduction by using thin c-Si layer
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Wafer thickness roadmap in PV industry
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o Limit of cell thickness in current module techno :
o Improved wafer sawing techno + reduced kerf less loss and Total thickness varaitiono Innovative handlings technoo New high eta cell concept suitable for thinbner waferso New interconnect and encapsulation techno at modume level
Integration of tinner wafer is always postponed
20152014
In 2012 In 2014
2013 170 µm 180 µm
2016 170 µm
2023 100 µm
2025 125 µm
o Technological implications for thinner wafer :
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Task 4.2: Cost calculation : CoO assessment
Context/Assumption (based on a standard PV production line) :
Profitable/unprofitable range, €/cell, €/kWh
Cost of Ownership (CoO) : financial estimate intended to determine the cost associated with the acquisition, use and maintenance of goods and services.
Based on SEMI Standards E35 (CoO calculation), E10 (machine utilization) and E79 (equipment efficiency)
Parameters
Substrate size 243.4 cm² (15.6×15.6 cm²)
Throughput 3 600 wafers/hour (wph).
Productivity OEE (Overall Equipment Effectiveness) : 0.974
Depreciation 1% per year /10 years
Floor space Estimated from equipement data sheet
Materials/Consumables Data collection
Utilities Electricity, compressed air, cooling water
Labour Cost of Operator, Supervision, Engineering and Maintenance
Cost of yield loss 99.9%
Wafer cost 1 €
Cell efficiency 20% (relastic, obtained by Solexel)
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Task 4.2: Cost calculation and life cycle assesment
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Describe the process steps
Collect Data on capex and opex
Cost
calculation
and life cycle
assesment
Fabrication line model / Equipement
dvp requested?
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Si Layer
Nanopatterning
Etching
Task 4.2: Cost calculation and life cycle assesment
WET ETCHING
DRY ETCHING
HCL Hole-Mask Colloidal Litho
WET ETCHING DRY ETCHING
NIL Nanoimprint Litho
LIL Laser Interference Litho
Epi PECVD – 1 to 10 µm Epifoil – 40 µm
Thin Si Layer Transfer : Anodic bonding
Nanopatterning
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Task 4.2: Cost calculation: Equipements
HCL
Process stepsEquipments
Laboratory IndustrialLayer cleaning Cleaning Beaker Cleaning station
Mask deposition Triple layer deposition
Pipette + Beaker Spray coating + Cleaning station
Mask patterning Step 1
Beads deposition Ultrasonic bath + Pipette
Spray coating
Beaker + Hot plate Cleaning stationMask patterning
Step 2Mask deposition Electron beam
assisted evaporation
Thermal evaporation
Beads removal Beaker Cleaning station
LIL
Process steps EquipmentsLaboratory Industrial
Mask deposition SiO2 deposition PECVD PECVD
Mask patterning Resist deposition Spin coating Spray coatingLaser exposure Laser+ optical table ?Development Beaker Wet bench
In lab : tool not suitable for high throughput in productionAvailable mass production tool with specifications as closed as possible Multiply number of tools to meet the throughpu
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Task 4.2: Cost calculation: HCL process
o Main impact on prices : the beads depositiono Impact of chemical prices (~86 %) or consumption (~88 %) is similar.
Lab price lowest chemical consu. Lowest prices0
1
2
3
4
5
26
28
30
32
34
36
Cos
t of o
wne
rshi
p (€
/ w
afer
)
Cleaning Mask deposition : Triple layer Patterning-step 1 (Beads) Patterning-step 2 (Mask on beads)
Impact of process steps on prices Process steps
Layer cleaning CleaningMask deposition Triple layer
depositionMask patterning
Step 1Beads deposition
Mask patterning Step 2
Mask deposition
Beads removal
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Task 4.2: Cost calculation: HCL process
Lab price
Price reduction
Red. chemical consu.
Plasma cleaning
3
x volume ethylene
Plasma cleaning
R
euse 5 x
Lowest beads consu.
Lowest price (beads + PPDA)0
1
2
3
4
20
21
22
23
24
25
26
27
C
ost o
f ow
ners
hip
(€ /
waf
er)
Mask patterning 1 (beads deposition)
Yield loss Utilities Floor space costs Labor Cost Depreciation Materials/Consumables
The cost driver of HCL : chemical products The cost ranges between 7€/wafer down to 1,5 €/wafer.
Parameters that impact the cost :
Scale up rules for the amount of the chemical products at a wafer size• Three times the volume of a standard wafer
instead of using a quantity proportional to the area : decreases by 42 %
• Assuming saving 40% of products, lowers the cost further by 33%
Purchasing higher volumes of products cuts prices :
• Available data : the ethylene glycol cost decreases from 50€/L at the lab-scale down to 3€/L when purchased by 200L unit. cost dividing by 5
• Not available data : selling price may be divided by a factor of 2 to 15. Assuming a conservative factor of 5, especially for bead solution (1830 €/L) and PDDA (45€/L), lowers the cost by 27%
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Task 4.2: Cost calculation : LIL process
The cost of LIL nanopatterning is about 0,9 €/wafer (0,19 €/Wp). The cost driver is Mat/consumption (photoresist).
Mat/co
nsum
Deprec
iation
Labor c
ost
Floor s
pace
Utilities
Yield lo
ss0
0.1
0.2
0.3
0.4
0.5
0.6
Cost drivers
Cost
of o
wne
rshi
p ($
/waf
er)
0 100200
300400
500600
700800
9001000
0.80.9
11.11.21.31.41.51.61.7
Impact of floor space and person/shift of CoO
Floor Space (m²)
Cost
of o
wne
rshi
p (€
/Waf
er)
80 p/shift
40 p/shift
20 p/shift10 p/shift
1 p/shift
o Assumptions on laser equipement :o Still at a lab-scale with a very low throughput (4 wafers/hour) 900 toolso Specific environment + ½ of the initial investment. o The impact of floor space (< 10% of Total Cost) and person/shift (40×p/shift 2 × CoO) is low to neglegible.
o No SiO2 hard mask :o From MicroResist Technology : P (price) = 1090.7 V-0.197 Need to purchase 20 000 L to meet 0.85 €/wf o For speciality chemicals, b ~ 0.75 (Ristow PhD).
Need to purchase 15 L to meet 0.85 €/wf In case of 100 L : 0.35 €/wf
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Task 4.2: CoO of Nanopatterning
o All nanopatterning techniques are much more expensive (0.5-1 € /wafer) than standard random wet etching (~ 0,025 €/wafer).
o Development of new tools is needed for HCL and LIL techniques.o Consummables are the main path to reduce cost.o High uncertainty in the cost calculation of the no mature techniques (LIL and HCL)
6,9
4,84,5
3,1
1,1
0,85
0,65
Max
Red. k
nown
Plasm
a cl.
Red. E
th.
Red. A
llLI
L NIL0
1
3
4
5
6
7
C
ost o
f ow
ners
hip
(€ /
waf
er)
Yield loss Utilities Floor space costs Labor Cost Depreciation Materials/Consumables
HCL
Thin c-Si layer deposition
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Task 4.2: Cost calculation : Epi-layero Hight ToC Epitaxial layer:
From variuos littérature : about 0,6 € /wf (0, 45 € /wf to 0,8 € /wf)To be noted : deposition rate is 4 µm/min with a throughput > 300 wf/h
o Low ToC Epitaxial layer:
1 2 3 4 5 6 70
1
2
3
4
5
6
7
8
9
10
6,3 nm/s 9,1 nm/s4,2 nm/s0,14 nm/s
Cos
t of O
wne
rshi
p (€
/waf
er)
Deposition rate multiplying factor
1 10 20 30 45 65 9012,6 nm/s
A deposition rate increase between x45 and x65 is required
Cost drivers % of Total Cost
Mat/consum 1,13%
Depreciation 6,32%
Labor cost 21,15%
Floor space 0,92%
Utilities 68,90%Yield loss 1,58%
o Uncertainty bar : electrical consomption /equipement from 50kWh to 150 kWh
Substrate handling : Bonding
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Task 4.2: Bonding on glass
1. Coefficient of thermal expansion as too be closed to silicon 3.10-6 K-1
Pyrex glass (borosilicate) : 3.10-6 K-1
Tempered glass : 9.10-6 K-1
Soda lime glass : 9.10-6 K-1
Aluminosilicate : 4,2.10-6 K-1
Borosilicate glass : 3 to 4,6.10-6 K-1
o Cost calculation :
Module cost at 1,8 €/wf when permanent bonding cost at least 4 /wf
2. Concentration of Na+ their mobility
Na+ concentration of ~ 3.8 wt% is required Soda lime glass : ~ 14 Wt% (Na2O) from PPG + CaO ~ 9 wt% Borosilicate glass (Corning Pyrex, Duran) : 4 Wt% (Na2 + K2O) + NO CaO
Lower amount of Na+ within Pyrex glass but significant lower Na+ ion mobility in soda-lime 2.
1 T.M.H. Lee et al. « Detailed characterization of anodic bondic process between glass and thin-film coated silicon substrates », Sensors and Actuators 86 (2000) 103-1072 A. L. R. Brennand « Thermal poling of multioxide silicate glasses and ion-exchanged waveguides », 2002, University of Southampton
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Glass bonding is the best way ?
o Technical specifications
Life Cycle Assessment
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Task 4.2: Life Cycle Assessment
Higher CO2 footprint of HCL : impact of aceton and ethylen glycol
Most of the time, impact of consumables is higher than the electrical consumption
High impact of SF6 ( high GWP)
Too mainy uncertainties to make any conclusions
Objectives of a LCA : Study of the materials and the enery flow at choosen step of the life of a product. Sustainable developpment of the product
Mask removalPatterning transfertMask patterningMask depositionCleaning
Carb
on fo
otpr
int (
norm
aize
d da
ta)
Summary
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Task 4.2: Cost calculation
NIL + Epi High ToC is almost competitive with Standard processNIL + Epi Low ToC may be competitive with Standard procee price in 2008RP remains the lowest expensive techniques
Standard 2008 Standard Epi-High T Epi-High T Epi-Low T0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
1,6
1,8
2,0
2,2
2,4
2,6
2,8
0,0
0,2
0,4
0,6
0,8
1,0
1,2
1,4
1,6
1,8
2,0
2,2
2,4
2,6
2,8
Cos
t of O
wne
rshi
p (€
/waf
er)
Textu : RP Textu : NIL
Cells Layer c-Si
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Task 4.3: Indentification of routes of exploitationEvaluation of industrialization option and development results obtained.
o Mid-Long Term : o Use in other reasearch programmso Needs developments
WHAT
Mid Term Techno
Epifoil cells with front-side nanopattern Imec, OBDU
Pseudo-disordered patterns, calculations, analysis and patterning INLc-Si (PECVD epi Si) Nano-patterning using wet etching (TMAH) INLdry /wet etching through NIL resists INL, OBDULarge area bottom-up nanopatterning (HCL) Chalmers
Engineering of the density of the colloidal pattern Templates for growth of high-density semiconductor nanowire arrays
Chalmers
Epitaxial growth at low T (microelectronics, PV) : tunable thickness and deposition rate LPICM
Detachment from H-rich porous interface (microelectronics, PV) : tunable thickness and deposition rate (Keep secret) LPICMNanolithography (LIL) INL
Long Term
Techno c-Si Nano-patterning using high pressure dry etching INLc-Si Nano-patterning using inductive coupled plasma etching INL
IT ToolAbsorption computation of active region in nanopatterned complex stacks
Unamur, INL
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Task 4.3: Indentification of routes of exploitationEvaluation of industrialization option and development results obtained.
Our tool box has improved : guidelines for technological path finder some may be ready for use
Need some further work with equipement suppliers
o Short Term :
WHAT HOW
IT Tool Genetic Algorithm Licensing (open or not) UNamur RCWA code Material data base Licensing (open or not)
Techno uSiOx:H passivation layers, ARC & conductivity (temperature resistance) Improve HJ solar cells LPICM
Replace HF cleaning of parent wafer by plasma Improve passivation for all c-Si technologies LPICM
o Further Needs :o Conformal depositiono Find/Improve the handling of thin layero Improve the equipement throughput
Get equipement manufacturers involved
nanophotonics for ultra-thin crystalline silicon photovoltaics
This project has received funding from the European Union’s Seventh Programme for research, technological development and demonstration under grant agreement No 309127