www.tyndall.ie innovation in ireland – the researcher perspective [email protected]...
TRANSCRIPT
www.tyndall.ie
Innovation in Ireland – the researcher
perspective
Destination Europe, San Francisco, 2012Ireland Workshop
Simon D. Elliott
www.tyndall.ie
Introducing Tyndall National Institute
John Tyndall,1820-1893
Ireland’s centre of excellence in
research into Information and
Communications Technologies:
• named after the Irish-born scientist;
• located in Cork, part of University
College Cork;
www.tyndall.ie
Introducing Tyndall National Institute
Ireland’s centre of excellence in
research into Information and
Communications Technologies:
• named after the Irish-born scientist;
• located in Cork, part of University
College Cork;
• strategic value to Ireland – providing
facilities for Universities and
technology transfer to industry;
• strong record in postgraduate
education.
www.tyndall.ie
Introducing Tyndall National Institute
In numbers:
• >400 staff of whom ~100 are PhD
students;
• 28 industry researchers-in-residence;
• 200 peer-reviewed publications
(2010);
• 8 patent applications, 9 patent
licences;
• 9 start-ups based on Tyndall
technology;
• 17,000 sq ft clean room space.
www.tyndall.ie
Nanofabrication: ultra-thin films
R. Feynman, “There’s plenty of room at the bottom”
(1959):
“What could we do with layered structures with just
the right layers? What would the properties of
materials be if we could really arrange the atoms the
way we want them? … When we have some control of
the arrangement of things on a small scale we will get
an enormously greater range of possible properties
that substances can have, and of different things that
we can do.”
Atomic layer deposition (ALD) has emerged as the
processing technology of choice for high-quality films in
demanding nanoscale geometries. R. Feynman, 29 Dec 1959, Annual Meeting of the American Physical Society at the California Institute of
Technology; © Engineering and Science, Caltech; see http://www.zyvex.com/nanotech/feynman.html.
www.tyndall.ie
Nanofabrication: ultra-thin films
http://www.youtube.com/watch?v=HUsOMnV65jk
www.tyndall.ie
My recent projects
Topic Industry partners
EU Rare earth oxide thin films SAFC, ASM, NXP, Numonyx
EU Charge trapping layers for flash memory
Numonyx
EU High permittivity films for super-capacitors
Analog Devices, ASM, SAFC, Air Liquide, Infineon etc.
EU Metallic films for X-ray lensing
IE Deposition of organic thin films
Henkel
IE Functional oxides for electronics (FORME)
Intel, Applied Materials, SAFC Hitech etc.
IE Process design for ALD of copper
Intel
www.tyndall.ie
My recent projects
Topic Industry partners
EU Rare earth oxide thin films SAFC, ASM, NXP, Numonyx
EU Charge trapping layers for flash memory
Numonyx
EU High permittivity films for super-capacitors
Analog Devices, ASM, SAFC, Air Liquide, Infineon etc.
EU Metallic films for X-ray lensing
IE Deposition of organic thin films
Henkel
IE Functional oxides for electronics (FORME)
Intel, Applied Materials, SAFC Hitech etc.
IE Process design for ALD of copper
Intel
www.tyndall.ie
Strategic research cluster Functional oxides and related materials for
electronics
–Chemistry
–Deposition
–Devices
www.tyndall.ie
Strategic research cluster Functional oxides and related materials for
electronics
–Chemistry
–Deposition
–Devices
Otway, Gun’ko, ElliottPrecursor synthesisQuantum chemistry
www.tyndall.ie
Strategic research cluster Functional oxides and related materials for
electronics
–Chemistry
–Deposition
–Devices
Pemble, Povey, Hughes, Holmes, Morris, McGlynn, Pelucchi
ALD reactor
X-ray photoelectron spectroscopy
www.tyndall.ie
Strategic research cluster Functional oxides and related materials for
electronics
–Chemistry
–Deposition
–DevicesHurley, Whatmore, Redmond, Quinn, Roy
MOSFET fabrication
Electrical C-V
www.tyndall.ie
Modelling interface structure
Computed structure of HfSiO4/Ge interface computed by first principles DFT, with spontaneous generation of defective 3-coordinate Ge (highlighted as ball);
green=Ge, red=O, blue=Hf, yellow=Si.
high-permittivity insulator (HfSiO4)
high mobility substrate (Ge)
www.tyndall.ie
Modelling deposition onto substrateS. Klejna
OAs
Surface model for oxidised III-V semiconductor
purple=As, red=O
www.tyndall.ie
Modelling deposition onto substrateS. Klejna
Adsorption of Al(CH3)3
Graphical representation of optimised geometries (GGA-PW91, USPP, VASP program).purple=As, red=O, blue=Al, grey=C, white=H
www.tyndall.ie
Modelling deposition onto substrateS. Klejna
Transfer of ligands from Al to As
www.tyndall.ie
Modelling deposition onto substrateS. Klejna
Transfer of ligands from Al to Oand of electrons from C to As
2e
Electron transfer confirmed using Bader population analysis.
www.tyndall.ie
Modelling deposition onto substrateS. Klejna
Proton transfer
www.tyndall.ie
purple=As, red=O, blue=Al, grey=C, white=H
Desorption of volatile species
C2H4
AsMe3
Modelling deposition onto substrateS. Klejna
www.tyndall.ie
Modelling deposition onto substrateS. Klejna
Desorption of volatile species
www.tyndall.ie
Modelling growth over ALD cyclesM. Shirazi
5 cycles of Hf(N(CH3)2)4+H2O ALD, T=500 K, p=0.26 Torr, tpulse=tpurge=0.1 s
red=O, blue=N, large grey=Hf, small grey=C, white=H
www.tyndall.ie
Value to Tyndall of industry collaboration
• Working on real-life, relevant problems specified by
industry;
• Valuable new ideas from interacting with researchers
in top global companies;
• Students obtain insight into industry needs and R&D
culture;
• Potential for research to have high impact;
• Reinforces industrial R&D in Ireland.