www.vlsi.itu.edu.tr23.10.2015 1 very large scale integration ii - vlsi ii memory structures hayri...
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Very Large Scale Integration II - VLSI II
Memory Structures
Hayri Uğur UYANIK
Devrim Yılmaz AKSIN
ITU VLSI Laboratories
Istanbul Technical University
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Outline History Lesson General Memory Structure Memory Cell Types
– Volatile SRAM DRAM
– Non-Volatile MPROM EPROM OTP & UV-EPROM E2PROM FeRAM Memristor
Sense Amplifiers– Voltage Sense Amplifiers– Current Sense Amplifiers
Address Decoder Memory Modelling In Verilog References
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History Lesson
Delay line memory– Piezoelectric pulses within mercury– One of the earliest electronic (?) memory– 1000 word storage
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General Memory Structure
Address Decoder
Memory Cell Array
DATA_IN[7:0]
Sense Amplifier
DATA_OUT[7:0]
ADR[3:0]
R/W
DATA[7:0]DATA_IN[7:0]
DATA_OUT[7:0]
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Memory Cell Types
Volatile
– SRAM– DRAM
Non-Volatile
– MPROM– EPROM
OTP UV-EPROM E2PROM
– FeRAM– Memristor
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SRAM
Static Random Access Memory
BB
SEL
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SRAM
Not area efficient No special semiconductor process Fast Low power consumption Easy to communicate
Used in– Embedded systems– CPU Cache– FPGA CPLD LUT
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DRAM
Dynamic Random Access Memory
SEL
B
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DRAM Area efficient Very area efficient Needs special semiconductor process Slow Hard to communicate with High power consumption Needs refreshing
Used in – Computer primary storage– Video card primary storage– Cell Phones, PDAs
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DRAM Types
Asynchronous DRAM Synchronous DRAM (SDRAM)
– Single Data Rate (SDR SDRAM)– Dual Data Rate (DDR SDRAM)
Both rising and falling edge Memory cells are slow compared to bandwidth demand Bandwidth is increased by increasing the I/O buffer data rate
(DDR2 and DDR3)
– Dual DDR Communicate with two different RAM slots at the same time
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DRAM Types
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Dual Ported RAM
SRAMs and DRAMs can be dual ported– can read from and write to two different addresses at
the same time– Mostly effective in
Video processing– One port filling the RAM, one port is reading for display
CPU registers FIFOs
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MPROM
Mask Programmable ROM
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MPROM Programmed at the fab
– Route metal interconnects– Increase VT
Change channel implant Change gate oxide thickness
One time programmable Only few masks are changed Cheap in large volume
Used in– Old video games– Sound data in electronic music instruments– Electronic dictionaries
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OTP & UV-EPROM
One Time Programmable ROM UV Erasable Programmable ROM
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OTP & UV-EPROM
1. High VG and VD creates hot electrons
2. They penetrate gate oxide
3. They become trapped in the floating polysilicon
4. Additional negative charge below the gate increases VT (For a 5V ROM, VT increases from 1V to 8V)
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OTP & UV-EPROM OTP and UV-EPROM are the same
– OTP has a opaque plastic package (cheaper) – UV-EPROM has a package with transparent quartz window
(expensive) Need special semiconductor process Slow write High power consumption when writing Fast read OTP data is permanent UV-EPROMs can be erased
– When exposed to UV light for 20 minutes
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E2PROM
Electrically Erasable Programmable ROM
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E2PROM
Erasing:– VD=0, VS=0, VG=High (e.g. 15V)
– Floating gate becomes positively charged Fowler-Nordheim Tunneling
– VT below floating gate (VTFG) drops
Making Open Circuit:– EPROM like operation– VD=0, VS=High (e.g. 12V) VG=VTCG
– Channel present under control gate– Hot electrons penetrate gate oxide– VTFG increases
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E2PROM
Fast read/write Need special semiconductor process Low power consumption when writing
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FeRAM
Ferroelectric RAM
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FeRAM
Fast read/write Need special semiconductor process Low power consumption Destructive reading
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Memristor
Missing circuit element for 37 years– Concept: Leon Chua - 1971– First Realization: HP Labs - 2008
Final addition to RLC team
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Memristor
Charge dependent resistance (memristance)
Applied voltage or current changes charge (thus the resistance)– Resistance is stored in a non-volatile manner– Can be used to store digital data– Must be read with an AC signal for non-destructive
reading (AC does not change stored charge)
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V t
M q tI t
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Memristor
Best of both worlds– Non-volatile– Fast (~fDRAM/10)
– Dense (~1Pb/cm3)
Has a potential to alter the
computer programming paradigm– No need for two sets of memories (fast & volatile for
computing, slow & non-volatile for data storage)
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Sense Amplifiers
Voltage Sense Amplifiers
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Sense Amplifiers
Current Sense Amplifiers
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Address Decodermodule ADD_3_8 (in, out);
input [2:0] in;output [7:0] out;
reg [7:0] out;
always @(in) begincase (in)
3'b000 : out = 8'b00000001;3'b001 : out = 8'b00000010;3'b010 : out = 8'b00000100;3'b011 : out = 8'b00001000;3'b100 : out = 8'b00010000;3'b101 : out = 8'b00100000;3'b110 : out = 8'b01000000;3'b111 : out = 8'b10000000;
endcaseendendmodule
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Memory Modelling In Verilog parameter RAM_WIDTH = <ram_width>; parameter RAM_ADDR_BITS = <ram_addr_bits>; reg [RAM_WIDTH-1:0] <ram_name> [(2**RAM_ADDR_BITS)-1:0]; reg [RAM_WIDTH-1:0] <output_data>;
<reg_or_wire> [RAM_ADDR_BITS-1:0] <address>; <reg_or_wire> [RAM_WIDTH-1:0] <input_data>;
initial$readmemh("<data_file_name>", <ram_name>, <begin_address>, <end_address>);
always @(posedge <clock>) beginif (<ram_enable>)
if (<write_enable>)<ram_name>[<address>] <= <input_data>;
else<output_data> <= <ram_name>[<address>];
end
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References http://www.ieee.org/portal/cms_docs_sscs/sscs/08Winter/sunami-
fig3.jpg http://en.wikipedia.org http://www.seas.upenn.edu/~ese570/1244.pdf http://www.xtremesystems.org/forums/showthread.php?208829-
Memory-101-SDR-vs-DDR1-vs-DDR2-vs-DDR3 http://smithsonianchips.si.edu/ice/cd/MEMORY97/SEC09.PDF http://smithsonianchips.si.edu/ice/cd/MEMORY97/SEC07.PDF http://spectrum.ieee.org/semiconductors/design/the-mysterious-
memristor http://www.eecg.toronto.edu/~kphang/papers/2001/igor_sense.pdf Xilinx Documentation