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EEL5225: Principles of MEMS Transducers (Fall 2003) EEL5225: Principles of MEMS Transducers (Fall 2003) Instructor: Dr. Hui-Kai Xie Introduction to Interface Electronics Lumped Circuit Elements General Amplifiers Operational Amplifiers Reading: Senturia, Chapter 14, p.353-395 Lecture 32 by H.K. Xie 11/21/2003

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11/21/2003 1EEL5225: Principles of MEMS Transducers (Fall 2003)

EEL5225: Principles of MEMS Transducers (Fall 2003)Instructor: Dr. Hui-Kai Xie

Introduction to Interface Electronics

Lumped Circuit ElementsGeneral AmplifiersOperational Amplifiers

Reading: Senturia, Chapter 14, p.353-395

Lecture 32 by H.K. Xie 11/21/2003

11/21/2003 2EEL5225: Principles of MEMS Transducers (Fall 2003)

Lumped Circuit Elements

Linear 1-port (2-terminal) passive devicesResistor: energy dissipationCapacitor: energy storageInductor: energy storage

11/21/2003 3EEL5225: Principles of MEMS Transducers (Fall 2003)

Lumped Circuit Elements

Non-linear 1-port (2-terminal) passive devicesP/N junction diodeNonlinear I-V characteristic

d

1

Note: Diode voltage,

: 1

1: i

D

D

qvkT

D S

D D d

qVkT

D S

Dd d

d

i I e

v V v

DC I I e

qISmall signal v v

kT r

= −

= +

= −

− = =

Ref. Sedra and Smith, Microelectronic Circuits, p. 132.

11/21/2003 4EEL5225: Principles of MEMS Transducers (Fall 2003)

P/N Diode

0.7 (silicon diode at room temp.)

V≈

Low-frequency large-signal equivalent circuit

High-frequency small-signal equivalent circuit

Ref. Sedra and Smith, Microelectronic Circuits, p. 170.

11/21/2003 5EEL5225: Principles of MEMS Transducers (Fall 2003)

Zener Diode

Exploits very sharp current-voltage characteristic at reverse breakdown for voltage regulation

Ref. Sedra and Smith, Microelectronic Circuits, p. 172.

11/21/2003 6EEL5225: Principles of MEMS Transducers (Fall 2003)

Diode Circuits

AC-to-DC converter

Ref. Sedra and Smith, Microelectronic Circuits, p. 176,184.

11/21/2003 7EEL5225: Principles of MEMS Transducers (Fall 2003)

Active Devices

SourcesEnergy supplied into system from external source (sometimes not shown)

Independent voltage sourcewith series source resistance

Independent current sourcewith shunt source resistance

v

v

i

i

11/21/2003 8EEL5225: Principles of MEMS Transducers (Fall 2003)

Active Devices

SourcesDependent sources

Dependent voltage source

Dependent current source

Ref. Van Valkenbur, Network Analysis, p. 38.

11/21/2003 9EEL5225: Principles of MEMS Transducers (Fall 2003)

Active Devices -- BJT & MOSFET

Cross-sectionN/P/N Bipolar Junction Transistor (BJT)

n-channel Metal Oxide Semiconductor Field Effect Transistor (n-channel MOSFET)

Ref. Sedra and Smith, Microelectronic Circuits, p. 231, 355.

11/21/2003 10EEL5225: Principles of MEMS Transducers (Fall 2003)

Active Devices -- BJT & MOSFET

Common-emitter configurationiC vs. vCE DC characteristics with base-emitter voltage (or base current) as parameter

Other configurations are common-base and common-collector

Common-source configurationiD vs. vDS DC characteristics with gate-to-source voltage as parameter

Other configurations are common-gate and common-drain

Ref. Sedra and Smith, Microelectronic Circuits, p. 240, 367.

11/21/2003 11EEL5225: Principles of MEMS Transducers (Fall 2003)

Active Devices -- BJT & MOSFET

BJT High-Frequency Small-signal Equivalent Circuit

MOSFET High-Frequency Small-signal Equivalent Circuit

Ref. Sedra and Smith, Microelectronic Circuits, p. 470, 445.

11/21/2003 12EEL5225: Principles of MEMS Transducers (Fall 2003)

General Amplifiers

Signal Amplification

( )

( )

( )

V

I

P

Voltage gain, A 20 log

Current gain, A 20 log

Power gain, A 10log

OV

I

OI

I

O OLP

I I I

vA dB

vi

A dBi

v iP A dBP v i

≡ =

Note: We will discuss the frequency response later.

Ref. Sedra and Smith, Microelectronic Circuits, p. 11.

11/21/2003 13EEL5225: Principles of MEMS Transducers (Fall 2003)

General Amplifiers

Amplifier Saturationhard limit at power supply limitsJargon: “rail” = power supply

rail-to-rail

Amplifier Nonlinearity

( ) ( )O O ov t V v t= +

( ) ( )I I iv t V v t= +

At operating point (known also as Quiescent point)

OV

I

dvA

dv=

Ref. Sedra and Smith, Microelectronic Circuits, p. 16.

11/21/2003 14EEL5225: Principles of MEMS Transducers (Fall 2003)

General Amplifiers

Voltage Amplifier Equivalent Circuit

Voltage amplifier with signal source and load connected

0

input resistanceoutput resistanceopen circuit voltage gain

i

O

V

RRA

≡≡≡

( )0

0

Overall gain:

LO V i

L O

ii S

i S

O i LV

S i S L O

Rv A v

R RR

v vR R

v R RA

v R R R R

=+

=+

=+ +

Ref. Sedra and Smith, Microelectronic Circuits, p. 16.

11/21/2003 15EEL5225: Principles of MEMS Transducers (Fall 2003)

General Amplifiers

Frequency Response of Amplifiers

function of

function of

For a linear circuit, for a sinusoidal input,( ) sin , the output is sinusoidal

with the same frequency:( ) sin( )

Amplifier transfer function, T( ):

T( )

T( )=

i i

o o

o

i

v t V t

v t V t

VV

ω

ω

ω φω

ω

ω φ

=

= +

=

Analyze amplifier circuit in the complexfrequency variable (s- or Laplace-domain).

ω

Ref. Sedra and Smith, Microelectronic Circuits, p. 20, 21.

11/21/2003 16EEL5225: Principles of MEMS Transducers (Fall 2003)

General Amplifiers

Frequency Response of Amplifiers

Capacitively coupled ac-amplifier Direct-coupled dc-amplifier

Tuned or bandpass amplifier Ref. Sedra and Smith, Microelectronic Circuits, p. 26..

11/21/2003 17EEL5225: Principles of MEMS Transducers (Fall 2003)

Single Time-Constant Networks

Review of Single Time-Constant Networkscircuits that can be reduced to one reactive component (capacitance or inductance) and one resistive component

High Pass FilterLow Pass Filter

Ref. Sedra and Smith, Microelectronic Circuits, p. 22.

11/21/2003 18EEL5225: Principles of MEMS Transducers (Fall 2003)

Single Time-Constant Networks

Low Pass Filter

0

0

2

0

1

0

Replacing the circuit elements with their impedances,1R R and C

sC( ) 1 1( )( ) 1 1

1 1where . Replacing s with ,

1( )

1

( ) tan

o

i

V sT s

sV s sRC

jRC

T j

T j

ω

ω ωτ

ωωω

ωωω

→ →

= = =+ +

= =

=

+

∠ = −

1sC

iV ( )s oV ( )s

Ref. Sedra and Smith, Microelectronic Circuits, p. 22.

11/21/2003 19EEL5225: Principles of MEMS Transducers (Fall 2003)

Single Time-Constant Networks

Magnitude and Phase Response of Low Pass STC Network

01RC

ω ω= =

Ref. Sedra and Smith, Microelectronic Circuits, p. 32.

11/21/2003 20EEL5225: Principles of MEMS Transducers (Fall 2003)

Single Time-Constant Networks

High Pass Filter

0

0

20

1 0

Replacing the circuit elements with their impedances,1R R and C

sC( )

( )( ) 1

1 1where . Replacing s with ,

1( )

1

( ) tan

o

i

V s sRC sT sV s sRC s

jRC

T j

T j

ω

ω ωτ

ωωω

ωω

ω−

→ →

= = =+ +

= =

= +

∠ =

iV ( )s oV ( )s

1sC

Ref. Sedra and Smith, Microelectronic Circuits, p. 22.

11/21/2003 21EEL5225: Principles of MEMS Transducers (Fall 2003)

Single Time-Constant Networks

Magnitude and Phase Response of High Pass STC Network

01RC

ω ω= =

Ref. Sedra and Smith, Microelectronic Circuits, p. 33.

11/21/2003 22EEL5225: Principles of MEMS Transducers (Fall 2003)

Single Time-Constant Networks

Amplifier Frequency Response

V0A iV

Find the amplifier voltage transfer function, DC gain, and high frequency roll-off.Ref. Sedra and Smith, Microelectronic Circuits, p. 33.

11/21/2003 23EEL5225: Principles of MEMS Transducers (Fall 2003)

Single Time-Constant Networks

Direct-coupled amplifier with input capacitance

Ref. Sedra and Smith, Microelectronic Circuits, p. 22.

( )

0

0

1//( ) ( ) and ( ) ( )

1//

( ) 1 1 1( )( ) 1 //1 1

This voltage transfer function has the same form as the low pass STC network.

DC

iiL

o V i i sL o

i Si

oV

o si i S i

L i

RsCR

V s A V s V s V sR R R R

sC

V sT s A

R RV s sC R RR R

= =+ +

= = + + +

( )

00

0

1 1 gain: T(s)1 1

1 1High frequency rolloff: //

Vso s

L i

i S i

AR RR R

C R Rω

τ

= + +

= =

V0A iV

11/21/2003 24EEL5225: Principles of MEMS Transducers (Fall 2003)

Single Time-Constant Networks

Direct-coupled Amplifier with Input Capacitance

( )

V0

V0

0

Example: 20 , 100 , 60

A 144 , 200 , 1

DC gain:

1 1A 1001 1

High frequency rolloff: 1 1 159

//

s i i

o L

o s

L i

i S i

R k R k C pFV R R kV

VKR R VR R

kHzC R R

ωτ

= Ω = Ω =

= = Ω = Ω

= = + +

= = =

V0A iV

Ref. Sedra and Smith, Microelectronic Circuits, p. 33.

11/21/2003 25EEL5225: Principles of MEMS Transducers (Fall 2003)

Single Time-Constant Networks

Capacitively-coupled Voltage Amplifier

0

0

0

Example: Capacitively coupled ideal voltage amplifier( )

( )1( )

High frequency gain: 100

Low frequency rolloff: 1 1 15.9

oV

i

V

V s sT s AV s s

RC

K A

HzRC

ωτ

= =+

= =

= = =

Ref. Sedra and Smith, Microelectronic Circuits, p. 33.

11/21/2003 26EEL5225: Principles of MEMS Transducers (Fall 2003)

Application: Piezoresistive Microphone

Capacitively coupled amplifier used to reject DC offset

Ref. Arnold, MEMS-based Directional Acoustic Array, M.S. Thesis 2001.

Amplifier

MicrophoneCapacitor

Resistor

Lid

PackageBody

SiliconSubstrate

C

C

R

R

R0 R0

R0R0

G

MicrophoneHybrid Package Vs+

Vs-

OUT

GND

Vb

Diff. Amp.

11/21/2003 27EEL5225: Principles of MEMS Transducers (Fall 2003)

Operational AmplifiersOperational Amplifiers

Basic building block for analog signal processing circuits

First integrated circuit operational amplifier, µ709, made by Fairchild Semiconductor in 1960s followed by the µ741.Consists of active transistors, resistors, and limited number of capacitorsApproximated by single-pole frequency response

Three stagesDifferential amplifier stage

Amplifies difference between two inputs

High-gain amplifier stageOutput amplifier stage

Inverting input

Non-inverting input

Power supply

Power supply

Output

Ref. Senturia, Microsystem Design, p. 382.

11/21/2003 28EEL5225: Principles of MEMS Transducers (Fall 2003)

Operational Amplifiers

u741 Opamp

11/21/2003 29EEL5225: Principles of MEMS Transducers (Fall 2003)

Operational AmplifiersWide variety of operational amplifiers:•High power•Low power•Precision•Low noise

11/21/2003 30EEL5225: Principles of MEMS Transducers (Fall 2003)

Operational Amplifiers

11/21/2003 31EEL5225: Principles of MEMS Transducers (Fall 2003)

Operational Amplifiers

11/21/2003 32EEL5225: Principles of MEMS Transducers (Fall 2003)

Operational AmplifiersGeneral input signals

Differential signal from transducerCommon mode signal

For example, 60 Hz electromagnetic interference appearing on both inputs

Differential gain

Common-mode gain

dv

2

2

dcm

dcm

vv v

vv v

+

= +

= − +

Common Mode Rejection Ratio (CMRR)

or 20log

Actual opamps, CMRR range from1000 to 100,000 (60dB to 100dB)

d d

cm cm

A ACMRR

A A=

( )o o

dd

v vA

v v v+ −

= =−

( ) / 2o o

cmcm

v vA

v v v+ −

= =+

Ref. Senturia, Microsystem Design, p. 382.

11/21/2003 33EEL5225: Principles of MEMS Transducers (Fall 2003)

Operational Amplifiers

Voltage FollowerOutput follows inputVo=Vi

Serves as bufferVery high input impedanceLow output impedance

11/21/2003 34EEL5225: Principles of MEMS Transducers (Fall 2003)

Operational Amplifiers

Non-inverting AmplifierShort op-amp analysis method:Assume that the input current is zero (infinite input impedance) and =0 ( ).

Using this method, we can analyze the transfer function for the non-invertingamplifier:

o

v v

vv

ε + −≈

1

2

2

1

If R , 1

[Unity-gain buffer or voltage follower.]

s

o

s

RR

vv

= +

= ∞ =

Ref. Senturia, Microsystem Design, p. 387.

11/21/2003 35EEL5225: Principles of MEMS Transducers (Fall 2003)

Operational Amplifiers

Inverting Amplifier

Ref. Senturia, Microsystem Design, p. 385.

1 2

2 2

1 12

1

Open-loop gain is .

Equating currents:

1Closed-loop gain: 11 1

0 when .

s

o

s

AV AR R

V R RV R RR

A R

A

ε ε ε

ε

− +=

= − → − + +

→ → ∞∵

11/21/2003 36EEL5225: Principles of MEMS Transducers (Fall 2003)

Operational Amplifiers

Inverting Amplifier

0

0

What is the frequency response of this configuration?

Replace A with the STC single-pole response, ( ) .1

AA s

ss

=+

Ref. Senturia, Microsystem Design, p. 387.

( )

0 02 2

1 120 0 0

1

20 0

10

2

1

Substituting the single-pole response for A gives:

R with a DC gain of

R1

1and 3dB frequency determined by the pole at .

1

Note t

o

s

V A sRV R R

A s s sR

RA s

Rs

RR

= −

+ + +

+ +

= −+

0 0hat the gain-bandwith product is preserved: .A s

0ω 0 0A ω

11/21/2003 37EEL5225: Principles of MEMS Transducers (Fall 2003)

Operational Amplifiers

Transimpedance Amplifier

1

Since the input current is negligible,

The transimpedance amplifier (voltage at output proportionalto current at input) is used as a current-to-voltage converter.

o sv R I= −

Ref. Senturia, Microsystem Design, p. 389.

11/21/2003 38EEL5225: Principles of MEMS Transducers (Fall 2003)

Operational Amplifiers

Integrator

1

1

1

Since the input current is negligible and the voltage at is approximatelythe same as at ground,

0

1 ( )

Note that the output voltage, .Therefore,

1 ( ) [

s cc

c s

o c

o s

vv

v dvi C

R dt

v V t dtR C

v v

v V t dtR C

+

−= =

=

= −

= −

∫ Output is integral of input!]

Note: The integrator circuit is extremely sensitive to parasitic DC leakage currents.

Ref. Senturia, Microsystem Design, p. 389.

11/21/2003 39EEL5225: Principles of MEMS Transducers (Fall 2003)

Operational Amplifiers

Differentiator

1

Similarly, we find that for the differentiator circuit,

[Output is derivative of input!]

Note: The output of the differentiator is limited by how fast the output of the

op-amp can change

so

dvv R C

dt= −

change in output voltage, defined by the slew rate= .time

Typical slew rates are on the order of 1V/ sec.µ

Ref. Senturia, Microsystem Design, p. 390.