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- Program at a Glance The 27th Korean Conference on Semiconduct。rs 2020년 2월 12일[수]-14일[금], 강원도 하이원 그랜드호텔덴는 ;

10:30-10:’45

건맨션흘L Short Course I

'Trends and Challenges in Nanoelectranics" 점심 I그댄드뚫 Ill/똥] ‘Short Course I 엽기자께안 채공

Short Course I ' Trends and Challenges in Nanoelectrorncs”

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Thin Film Process Techn이여Y

Compound Semiconductors

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Device & Process Modeling, Simulation and Reliabil씨

Display and Ima빙ng Techn이ogies

MEMS & Senscr Systems

Nano-Science & Tectmology

Memory (Design & Process Technology)

Analog Design

RFandWi떼않sDesign

VLSI CAD

System LSI DeSlgn

P Device for Energy (S이ar Cell, Power Devicκ Battery, 하c.)

Q Metrology, Inspection, and Yield Enhancement

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CONTENTS

I. 대회조직 7

상임운영위원회 ............................... .. ..... .. ........................................ ..................................... 7 조직위원회 ............................................... .. .......................................... ... ............................. 7

분과위원회 -------------------------‘--------- ------------------, ••• ,----- ....................... .................................... 8

11. 주요행사일정 13

-2월 12일(수) Short Course .............. ’ ••••••••••• ’ •• ’ ••••••••• ’ •••••••••••••••••••••••••••••••••• ’ ••• ••••••••••••••••••••••••••••••••••• 13

-2월 13일(목) 기조강연 ............ ‘ •••••••••••••••••••• ‘’’’ ••••••••••••••••••••••••••• ‘ ••••• ‘‘ •••••••••••• ’’’ ••••• •• ’ •••••••••••••••••••••••••••• 1 4 만찬 / 시상식 ....................................................................... ’ ••• ’ ’ .’’ ’’ •• ••••••••••••••••••••••••••••••• 1 4 Rump Session .......... ’ •••••• ’ ••••• ’. ‘‘ •• ••• ••••••••••••••••••••••••• ’ ••••••••• ’.’ ’ .... ...... ............................. 15

-2월 14일(금)

폐회식 및 경품추첨식 ..... ’ •••• ’’’’’’ ••••••• ‘ ‘ ••••••• ‘ •••••••••••••• ’ •• ’ ••• ’ ’’’’’.’’’’’ •••• ‘ .‘ •••••••• ‘‘ ....... .. ........... 15

血.강대원상 • 6

w. 전시안내 19

v. 기조강연 29

VI. 구두l포스터 발표 안내 31

- 2월 13일(목)

구두발표 -- ----------- ,--------------------’ ‘”’ -- -- -----------------------------------------, ,,----- ---- --------------------------- 34 포스터발표 -------------------‘------------- -- -- -- ---- -------,--------- ……………………………………… ---------… 61

- 2월 14일(금)

구두발표 ---------------------------------------- --- -- -- --------------- ------------------- ‘ --- ------- ----- ------- --- ---------------- 94 포스터빌표 ············· ··· ··········· ············································································· ··· ········· · 131

W. Author Index

- Author Index (A-Z) ........................................................................... ......................... 16

- Author Index (「-동) -- --- ---- ----- - - - -------

I The:· 27th . Korean :. ConferenCR! ·on .· Semic。nductors I

구투 I ~폼λ터

발표안내

2020년 2월 14일(금)

/π\ 제 27회 The 27th Ko「ean

매P 한국반도체학술대회

• 웹웹 활촬눌r풀iii"빼;~H획

Self-Powered Pressure Sensor with Silk-based Piezoelectric Film for Wearable Electronics

FPl-166 Minhyun 」 ung1’ Kwang-jae Lee2, 」 ae-wook Kang2, and Sanghun Jeon1

1 School of Electrical Engineering, KA/ST, 2 Department of Flexible and Printable Electronics, Jeonbuk

National University

Sensing Characteristics of the MOSFET-type Gas Sensor with Sputtered W03 Sensing Layer

Yujeong 」 eong1, Seongbin Hong1’ Gyuweon 」 ung1, Dongkyu 」 ang1, Wonjun Shin1, 」 inwoo Park1’ FPl-167 Seung-lk Han2, Hyungtak Seo2, and Jong-Ho Lee1

10epartment of Electrical Engineering, and Inter-University Semiconductor Research Center, Seoul

National University, 20epartment of Energy Systems Research, Ajou University

Skin Deformation Detection Sensor for the AR Headset Hands-free Interface

FPl-168 」aekwang Cha, Jinhyuk Kim, and Shiho Kim

School of Integrated Technol。gy, and Yonsei Institute of Convergence Techn。logy, Yonsei University

The Construct of RF Dielectrophoretic System for Observing Cellular Behavior above a Few

Hundreds MHz FPl-169

Sang Hyun Lee, Kang In Yeo, Seungyeop Choi, and Sang Woo Lee

Department 。fBiomedical Engineering, y。nsei University

Time-of-flight Sensor 시A템 구축 및 성능 평가

FPl-170 Eunsung Park1'2, Woo-young Choi1’ and Myung-jae Lee2

10epartment of Electrical and Electronic Engineering, Yonsei University, 2Post-silicon Semiconductor

Institute, KIST

Waveguide Piezoelectric Micromachined Ultrasonic Transducers (PMUTs) Using Single-crystalline

PMN-PZT Thin Film for Ultrasonic Fingerprint/vein Co-recognition

FPl-171 」 in Soo Park1'2, s。。 Young Jung3키 Seung-hyub Baek3, and Byung Chui Lee1

1Center for BioMicrosystems, KIS℃ 2 Department of Electrical Engineering, Korea University, 3Center

for Electronic Materials, KIST, 4Department of Material Science and Engineering, Seoul National

University

Wireless, Skin-mountable Wearable EMG Sensor for Human-Machine Interface

FPl-172 Sunggu Kang, Minsu Song, and 」 eonghyun Kim

Department of Electr。nic c。nvergence Engineering, Kwangw。。n University

고에너지 이온주입을 이용한 351.1m 단위 픽셀 크기를 갖는 실리콘 광증배 (Si PM)소자

FPl-173 원종일1, 박건식1, 조두형l’ 고상춘1, 이성현1, 최병건2, 박성모2, 박경흔F

1ETRI 반도체융합부품연구실, 2ETRI 초경량지능형반도체연구실

금속 나노파티클이 기능화된 닙랜치 형태 나노와이어의 가스센싱 특성 향상

Hyoun w。。 Kim1·2, Myung Sik Choi1, Jae Hoon Bang1’ Seungmin Han1, Ha Young Lee1, and

FPl-174 Han Gil Na1

1Division of Materials Science and Engineering, Hanyang University, 2The Research Institute of Industrial Science, Hanyang University

150

0

200

400

600

800

1000

1200

1400

1600

5x5 10x10 15x15 20x20

Maxim

um distance(m

m)

Target size (cm)

Short mode

4x4 16x16

Target

Time-of-Flight Sensor 시스템 구축 및 성능 평가Eun-sung Park*, Woo-Young Choi and Myung-Jae Lee

Advanced Semiconductor Devices and Systems(ADS) Lab, KIST, Korea

Email: es.park@kist.re.kr*, mj.lee@kist.re.kr

Time-of-Flight sensor

VL53L1X

Result

Conclusion

400cm

27°

ToF sensor from STMicroelectronics

- Size : 4.9 x 2.5 x 1.5 mm- Emitter : 940 nm invisible

laser- SPAD receiving

array(16x16) with integrated lens

‐ Programmable with Nucleo evaluation board

Source

Detector

Time

Flight time

Source

Detector

Object

Speed of light ′c 3 10 𝑚/𝑠Time of flight (ToF) = 20ns (20 10 𝑠)

Distance 𝐷 𝑐 3 𝑚

We can get distancefrom object to receiver

From a pulse of light reflected by an object

SPAD Overview Single-Photon Avalanche Diode

SPAD structure

GND

𝑉 𝑉

𝑉 𝑉

𝑅

Photon

Very high gain of Geiger-mode operation allows for

Single Photon Detection

Digital nature of SPAD output allows for

Time-of-Arrival Detection&

Photon Counting

Guardring

𝑃Electrode

𝐼

𝑉

𝑉

𝐺𝑎𝑖𝑛

𝑉

1

Avalanche

Conventional

Geiger mode Depletion Region

Photodiode

Depletion RegionSPAD𝐼- 𝑉/ 𝐺𝑎𝑖𝑛

Characteristic

0

200

400

600

800

1000

1200

1400

1600

MEA

SURED

 DISTA

NCE(MM)

ACTUAL DIATANCE(MM)

Short mode

Ambient Dark Actual D

0

500

1000

1500

2000

2500

3000

3500

4000

100

300

500

700

900

1100

1300

1500

1700

1900

2100

2300

2500

2700

2900

3100

3300

3500

3700

MEA

SURED

 DISTA

NCE(MM)

ACTUAL DISTANCE

Long mode

Ambient Dark Actual D

0

100

200

300

400

500

600

700

60 100 140 180 220 260 300 340 380 420 460 500 540 580 620 660

MEA

SURED

 DISTA

NCE(MM)

ACTUAL DISTANCE(MM) 

Short mode

10% 20% 30% 40% 50% 60%

0

100

200

300

400

500

600

700

800

70

100

130

160

190

220

250

280

310

340

370

400

430

460

490

520

550

580

610

640

670

700

730

MEA

SURED

 DISTA

NCE(MM)

ACTUAL DISTANCE(MM)

Long mode

10% 20% 30% 40% 50% 60%

0

200

400

600

800

1000

1200

1400

1600

5x5 10x10 15x15 20x20

Max distance(m

m)

Target size(cm)

SHORT MODE

Ambient Dark Actual D

0

500

1000

1500

2000

2500

3000

3500

4000

10x10 20x20 30x30 40x40 50x50 60x60 70x70

DISTA

NCEMEA

SUREM

ENT(M

M)

TARGET SIZE(CM)

LONG MODE

Ambient Dark Actual D

0

500

1000

1500

2000

2500

3000

3500

4000

10x10 20x20 30x30 40x40 50x50 60x60 70x70

Maxim

um distance(m

m)

Target size (cm)

Long mode

4x4 16x16

‐ Distance ranging up to 400 cm‐ Typical full field of view(FoV) : 27°

(When using 16x16 SPAD array)‐ 3 type distance measurement mode 

(short, medium long mode)‐ Programmable Region of Interest (ROI) size 

on the receiving array, 𝑉

Quench

Off

𝑉

Time ns

Avalanche

Recharge

𝑉

𝐼

𝑉

SPADOn

𝑉 𝐸𝑋𝑉

Distance Mode

Max.Distance(cm)

Short 136

Medium 290

Long 360

(1) Distance measurement

(2) Reflective dependence

(3) Size of target

(4) Programmable RoI

hv

hv

VL53L1X FoV

Target

ND filters

VL53L1X

VL53L1X

In order to test the reliability of the VL53L1X sensor, the distance was measured in short mode and long mode. The condition of ambient light is same as data sheet noted. 

(Dark : 0 lux, Ambient light : 400 lux)

Distance measurement was performed to get the data of how far does Vl53L1x can detect if target is smaller that FoV.

In order to test the reflective dependence of VL53L1X, the target has changed to Neutral density filter and distance is measured until 660~730cm that FoV can cover.

RoI was changed to see the change of the maximum measurable distance. RoI is programmable from 4x4 to 16x16.

(1) Distance measurement

(2) Reflective something

(3) Size of target

(4) Programmable RoI

- Accurate no matter what condition (dark/light) it's in: max error < 20mm (same as data sheet)

-> Reliable in indoor/outdoor applications

- Negligible reflectivity dependence on accuracy-> Reliable various-object measurement thanks to SPAD-based ToF technology

- VL53L1X cannot measure an object if its size smaller than FoV, although it's pretty close!-> Limited applications! Need to be solved!!

- VL53L1X-based system can be optimized for each application.- Smaller RoI results in shorter distance & worse accuracy

Test condition

Target size Cover the FoVRoI 16x16

FoV

Target

FoV

Test condition

Target size Smaller than FoV

RoI 16x16

Target

Test condition

Target type

ND filter (5x5 cm)

RoI 16x16

Test condition

Target size Smaller than FoV

RoI 4x4 / 16x16

VL53L1X

Actual D Actual D