1/11 activitats en nanotecnologies grup de dispositius, sensors i disseny vlsi eduard llobet lluís...
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Activitats en NanotecnologiesGrup de Dispositius, Sensors i Disseny VLSI
Eduard LlobetLluís F. Marsal
mic
rosy
stem
s nanotechnologies
for chemical
analysis
MMinoSinoS
mic
rosy
stem
s nanotechnologies
for chemical
analysis
MMinoSinoS
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Sub-línies
• MINOS: Microsystems and Nanotechnologies for Chemical Analysis (4 permanent, 2 RC, 1 JC, 9 PhD students)
– Nanosized metal oxide films for gas sensors
– CNT based gas sensors
– Porous alumina as template material
• NEPHOS: Nano Electronic and Photonic Systems ( 4 permanent, 1 RC, 1 JC, 8 PhD students)
– Modeling of nanoscale MOSFETs
– Porous and macroporous silicon
– Photonic crystals
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Projectes
• Desarrollo de tecnología para células solares fotovoltaicasTIC2002-4184-C02-02, 2003-2005
• SINANO E04003S
• EUROSOI E04002S
• Food Quality and Safety with Microsystems, GoodFood FP6-IST-1-508774-IP, 2003-2006
• Técnicas y tecnologías para el desarrollo de microsistemas analizadores de gases basados en agrupaciones integradas de sensores catalíticos TIC2003-06301, 2004-2006
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Modeling of nanoscale MOSFETs
• We have developed a physics-based compact model for ballistic nanoscale GAA MOSFETs which is based on Landauer’s transmission theory and incorporates the effects of multi-subband conduction.
• Scattering has been later incorporated to this model when used for DG MOSFETs.
• A compact model for Surrounding Gate MOSFETs under the drift-diffusion approximation has also been developed.
Cylindrical GAA witha 65 nm diameter Si film
Dotted line: measurementsSolid line: model0.2 0.4 0.6 0.8 1 1.2 1.4
0
5
10
15
20
Tra
nsco
nduc
tanc
e (
S)
T=70 mK
11E
VDS=2 mV
21E
12E 1
3E
11E
22E
21E 1
2E14E
13E 2
2E
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Porous-macroporous silicon
Silicon dioxide pillar arrays
Macropores with modulated pore diameter in depth
Silicon Oxide Microneedles
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Photonic crystals
J X J
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
T E
T M
9 0 m
7 0 m
4 0 m
1 0 m
9 0 m
1 0 m
m ic ro p o ro u s la y e r
Photonic band structure of air holes in silicon.
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Nanosized metal oxide films for gas sensors
• Ultra-thin films of metal oxides are grown by sputtering with interruptions.
No interr. 1 interr. 3 interr.
• As grain size diminishes, gas sensitivity increases.
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CNT based gas sensors
Characteristics:
– Catalytic carbon deposition method
– Purity > 95%
– Diameter:
• MWNT: 3 to 25 nm (outer diam.)
– Length:
• up to 50 m
MWNT functionalised in an RF inductively coupled oxygen plasma
Pur
e M
WN
TM
WN
T+
WO
3
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CNT based gas sensors
Response to NO2 of a pure MWNT sensor (functionalised with 20% at.
oxygen at the surface)
Response to NH3 of a WO3+MWNT sensor (functionalised with 10% at.
oxygen at the surface)
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Porous alumina as template material
Anodization of Al foils
Cu nanowires electroplated using a nanoporous alumina
template
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Publicacions rellevants
• Modeling of Nanoscale Gate-All-Around MOSFETs, IEEE Electron Device Letters, 2004
• Analysis of photonic band gaps in two-dimensional photonic crystals with rods covered by a thin interfacial layer, Phys. Rev.B, 2004
• Continuous analytic current-voltage model for surrounding gate MOSFETs, IEEE Electron Device Letters, 2004
• Effects of symmetry reduction in two-dimensional square and triangular lattices, Phys. Rev.B, 2004
• Detection of NO2 and NH3 with Oxygen Functionalised MWNT-based -hotplate gas sensors, Eurosensors XVIII, 2004 and submitted to Sensors Actuators B.
• New Technology of Metal Oxide Thin Film Preparation for Chemical Sensor Application, presented at E-MRS 2004 and submitted to Sensors Actuators B.