IXYSPOWEREfficiency Through Technology

1200V GenX3™ IGBTs

IXYS expands its GenX3TM insulated gate bipolar transistor (IGBT) portfolio to 1200

volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3TM IGBT

process and utilize IXYS’ advanced Punch-Through (PT) technology to provide lower

saturation voltages, lower switching losses, and higher surge current capabilities. This

new extension of GenX3TM IGBTs is a part of IXYS growing product line aimed at the high

voltage power conversion market.

To accommodate optimum part selection, designers have a choice in selecting between

three sub-classes denoted A3, B3, and C3. These classifications offer greater system

design flexibility and the opportunity for designers to reach the best compromise

between critical requirements such as switching frequency, efficiency, and cost. Co-

packed variants of these new devices are available with IXYS’ HiPerFREDTM (suffix “D1”)

and SONIC-FRDTM (suffix “H1”) ultra-fast recovery diodes providing exceptional fast

recovery and soft switching characteristics. These co-packed diodes minimize losses in

hard switching applications, while maintaining superior soft recovery characteristics to

minimize switching noise. Additional product attributes include avalanche capabilities

and a square reverse bias safe operating area, allowing the device to safely switch in a

snubberless hard switching application.

IXYS 1200V GenX3TM IGBTs are offered in various standard and ISOPLUS packages with

collector current ratings @ Tc=110oC from 20 amperes to 120 amperes. Standard

packages include the TO-263, TO-247, PLUS247, TO-220, TO-264 & TO-268. List of

possible applications include solar inverters, automatic voltage regulators, industrial

battery chargers, wind turbine inverters, capacitor discharge circuits, electronic

circuit breakers, resonant power conversion circuits, induction heating for industrial

processing, uninterruptible power supplies, motor drives, switch-mode power supplies,

power factor correction circuits, and welding machines.

march 2009

N E W P r O D U c T B r I E F

OVErVIEW

aPPlIcaTIONsPower inverters �UPs �motor drives �smPs �PFc circuits �Battery chargers �Welding machines �Lamp ballast �In-rush current protection circuits �DC choppers �Induction heating �

FEaTUrEsHigh current handling capability �International standard packages �Optimized for low conduction & �switching losses Ultra fast anti-parallel diode �(optional)ISOPLUS package options �Avalanche rated �square rBsOa �

BENEFITsSpace savings �High power density �Low gate drive requirement �

NEXT GENEraTION 1200V IGBTs FOr POWEr cONVErsION aPPlIcaTIONs

Q1

Q2

D1

D3

D2

D4

RectifierGate Drive Controller

L1

C1

Cr

Load

LrAC Input

Inverter Resonant Tank

DCAC

High Frequency AC

High Frequency Magnetic Field

Q2 Q4

Q3 Q5

C1

D1

L1

SOLAR

PANE L

Electric GridQ1

PFC and Gate Drive Controller

PFC Boost Converter

Full Bridge Inverter

PB120IGBTA3B3C3 1.3March 2009

Basic Induction Heating Power SystemGeneral solar Inverter

Bond wires

Leads

Copper Copper SolderCeramic

DCB

ChipMould

PartNumber Vces

Ic25Tc = 25oc

Ic110Tc = 110oc

Vce (sat)TJ = 25oc tfi typ Eoff typ RthJC

PackageType

a3-class n Ultra Low V(sat) IGBTs n Up to 3kHzIXGA20N120A3 1200V 40A 20A 2.5V 1220ns 10.1mJ 0.69oC/W TO-263

IXGH20N120A3 1200V 40A 20A 2.5V 1220ns 10.1mJ 0.69oC/W TO-247

IXGP20N120A3 1200V 40A 20A 2.5V 1220ns 10.1mJ 0.69oC/W TO-220

IXGH32N120A3 1200V 75A 32A 2.35V 1240ns na 0.42oC/W TO-247

IXGT32N120A3 1200V 75A 32A 2.35V 1240ns na 0.42oC/W TO-268

IXGK120N120A3 1200V 240A 120A 2.3V 650ns 58mJ 0.15oC/W TO-264

IXGX120N120A3 1200V 240A 120A 2.3V 650ns 58mJ 0.15oC/W PLUS247

IXGK120N120A3 1200V 240A 120A 2.2V 680ns 58mJ 0.15oC/W TO-264

IXGX120N120A3 1200V 240A 120A 2.2V 680ns 58mJ 0.15oC/W PLUS247

B3-class n Medium Speed IGBTs n 3kHz to 20kHzIXGA30N120B3 1200V na 30A 3.5V 255ns 5.1mJ 0.42oC/W TO-263

IXGH30N120B3D1 1200V 50A 30A 3.5V 255ns 5.1mJ 0.42oC/W TO-247

IXGP30N120B3 1200V na 30A 3.5V 255ns 5.1mJ 0.42oC/W TO-220

IXGT30N120B3D1 1200V 50A 30A 3.5V 255ns 5.1mJ 0.42oC/W TO-268

c3-class n High Speed IGBTs n 20kHz to 50kHzIXGA24N120C3 1200V 48A 24(tc100)A 4.2V 305ns 1.18mJ 0.5oC/W TO-263

IXGH24N120C3 1200V 48A 24(tc100)A 4.2V 305ns 1.18mJ 0.5oC/W TO-247

IXGH24N120C3H1 1200V 48A 24(tc100)A 4.2V 305ns 1.18mJ 0.5oC/W TO-247

IXGP24N120C3 1200V 48A 24(tc100)A 4.2V 305ns 1.18mJ 0.5oC/W TO-220

IXGR24N120C3D1 1200V 48A 24(tc100)A 4.2V 305ns 1.18mJ 1oC/W ISOPLUS 247

IXGH30N120C3H1 1200V 48A 24(tc100)A 4.2V 280ns 1.3mJ 0.5oC/W TO-247

IXGH40N120C3 1200V 75A 40A 4.4V 298ns 1.6mJ 0.33oC/W TO-247

IXGH40N120C3D1 1200 75V 40A 4.4V 298ns 1.6mJ 0.33oC/W TO-247

IXGH50N120C3 1200V 75A 50A 4.2V 315ns 2.1mJ 0.27oC/W TO-247

Application Circuits

IsOPlUsTm Packages with Internal Alumina DCB Isolation*

1200V GenX3Tm IGBTs Summary Table

This figure illustrates a general solar inverter circuit. This circuit topology

is comprised of a PFC boost converter stage and Full bridge power inverter

stage. Input power from a solar panel enters the power factor boost

converter and is further processed via a full bridge inverter power stage,

which in turn enters the electric grid.

This figure illustrates a general induction heating power system. This circuit

topology is comprised of a rectifier stage, high frequency power inverter stage

(in a form of a series half-bridge), and resonant tank circuit. An AC current

originating from a power source is converted to a DC value via the rectifier

stage. This DC value is then processed via a high frequency switching circuit

which is then administered to a heating coil element.

Provides 2500V, UL recognized isolation with superior • thermal performance (E153432).Improves termperature and power cycling capability.• Cost effective clip mounting.•

* IXYS Patented Packages, Patent No. 6,404,065* For information regarding IXYS ISoPLUS packages, visit http://www.ixys.com/IXAN0022.pdf