40v n-ch power mosfet ds-121819.pdf · 2019. 12. 18. · gs =4.5v, i d =20a - 2 transconductance...
TRANSCRIPT
Avalanche Energy, Single Pulse EAS L=0.5mH, TC=25℃ 400 mJ
Parameter
ID (Sillicon Limited) 100 A
RDS(on),max VGS=4.5V 2.6 mW
Part Number Package Marking
HGN017N04BL DFN5*6 GN017N04BL
V
- A
Continuous Drain Current (Silicon Limited) ID
Gate to Source Voltage VGS
Drain to Source Voltage
400
±20
IDM
-
TC=100℃ 82
Pulsed Drain Current
-
TC=25℃ 100
V
Conditions
A
Absolute Maximum Ratings at Tj=25℃ (unless otherwise specified)
VDS
UnitValue
40
Symbol
Absolute Maximum Ratings
125PD TA=25℃Power Dissipation
Operating and Storage Temperature TJ, Tstg -
W
-55 to150 ℃
Thermal Resistance Junction-Ambient
Parameter
Prelim
Max
Dec. 2019
RqJA ℃/W
Symbol Unit
50
Thermal Resistance Junction-Case RqJc 1 ℃/W
P-1
40V N-Ch Power MOSFET
HGN017N04BL
VDS 40 V
1.7 mWRDS(on),max VGS=10V
Drain
Src
Gate
Feature◇ High Speed Power Switching, Logic Level◇ Enhanced Avalanche Ruggedness◇ 100% UIS Tested, 100% Rg Tested◇ Lead Free, Halogen Free
Application◇ Hard Switching and High Speed Circuit◇ DC/DC in Telecoms and Inductrial
DFN5*6
Pin 1
S
S
S
G
D
D
D
D
nC- 12.0
Total Gate Charge
-
Rise time tr
Turn off Delay Time td(off)
-
Qg (4.5V)
Gate to Source Charge Qgs VDD=15V, ID=20A, VGS=10V
-
Gate to Drain (Miller) Charge Qgd
HGN017N04BL
9.0 -
Turn on Delay Time td(on)
VDD=15V, ID=20A, VGS=10V,
RG=3.3W,
-
Fall Time tf -
-
-
-
-
-
-
Dynamic Characteristics
-
Dec. 2019
VGS=0V, IF=1A - - 1.2 V
ns
32.0
Reverse Diode Characteristics
Diode Forward Voltage
-58.5
18.5
VSD
82
Coss -
3972
- 18.5
45.0
Prelim
mAVGS=0V, VDS=32V, Tj=55℃ - - 5
- 1
±100 nA
VGS(th) VGS=VDS, ID=250mA 1.2 1.6
Drain to Source Breakdown Voltage V(BR)DSS VGS=0V, ID=250mA
VGS=10V, ID=20A - 1.4RDS(on)
Gate to Source Leakage Current IGSS VGS=±20V, VDS=0V - -
Zero Gate Voltage Drain Current IDSS
VGS=0V, VDS=32V, Tj=25℃ -
P-2
Electrical Characteristics at Tj=25℃ (unless otherwise specified)
Static Characteristics
Parameter Symbol
2-VGS=4.5V, ID=20A
Transconductance
ConditionsValue
Unittyp
40V
2.2
-
min
-
max
Gate Threshold Voltage
Input Capacitance Ciss
VGS=0V, VDS=20V, f=1MHz
- S
pF-
1.7mW
2.6Drain to Source on Resistance
-53
Crss
VDS=5V, ID=20Agfs
Reverse Transfer Capacitance
1119
-
Output Capacitance
-
P-3
Fig 1. Typical Output Characteristics Figure 2. On-Resistance vs. Gate-Source Voltage
HGN017N04BL
Prelim Dec. 2019
Figure 3. Normalized VGS(th) vs. Junction Temperature Figure 4. Normalized On-Resistance vs. Junction Temperature
Figure 5. Typical Source-Drain Diode Forward Voltage Figure 6. Typical Capacitance vs. Drain-to-Source Voltage
HGN017N04BL P-4
Figure 7. Typical Gate-Charge vs. Gate-to-Source Voltage Figure 8. Maximum Safe Operating Area
Figure 9. Normalized Maximum Transient Thermal Impedance, Junction-to-Ambient
Prelim Dec. 2019
Prelim Dec. 2019
P-5
Inductive switching Test
Gate Charge Test
Uclamped Inductive Switching (UIS) Test
Diode Recovery Test
HGN017N04BL