Training09

Text Box

530.41 INT V.1

CONTENTS IX

Spectroscopic ellipsometry of ultrathin films: from UV to IR . . . . . . . . .. 157 B. Drevillon (Palaiseau, France)

CuInSe2 films for photovoltaics and photoelectrochemistry. . . . . . . . . .. 167 D. Haneman, S. N. Sahu and R. D. L. Kristensen (Kensington, New South Wales, Australia)

Thin film processes for compound oxide ceramics ofperovskite structure. .. 175 K. Wasa, H. Adachi, K. Hirochi, K. Setsune, T. Kamada and M. Kitabatake (Moriguchi, Japan)

High temperature superconductors in electronics. . . . . . . . . . . . . . . " 181 F. Lange (Dresden, G.D.R.)

Theoretical description of gas-film interaction on SnO x ' . . • . . • • . . . •• 189 1. N. Zemel (Philadelphia, PA, U.S.A.)

The role of thermal conductivity in the pulsed laser damage sensitivity of optical thin films . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 203

A. H. Guenther (Kirtland A F B, NM, U.S.A.) and 1. K. McIver (Albuquerque, NM, uS.A.)

Pulsed-laser-induced and ion-beam-induced surface synthesis and modifi­cation of oxides, nitrides and carbides . . . . . . . . . . . . . . . . . . . . . .. 215

S. B. Ogale (Pune, India)

DEPOSITION PROCESSES

Effect of mixing oxygen or diborane on the formation of amorphous carbon films from methane by rJ. plasma chemical vapour deposition . . . . . . . .. 229

C. R. Aiyer, S. A. Gangal, K. Montasser, S. Morita and S. Hattori (Nagoya, Japan)

Fabrication of transition metal nitride films using a shock wave plasma .. " 233 T. Endo, H. Ezumi, H. Yamada, K. K4,wahara and T. Kino (Hiroshima, Japan)

Direct UV photoenhanced chemical vapour deposition of a-Si:H from disilane using a deuterium lamp. . . . . . . . . . . . . . . . . . . . . . . . . .. 237

Y. K. Bhatnagar and W. I. Milne (Cambridge, UK.)

Study of thermodynamic processes in the hot wall reactor for the growth of high quality CdTe on GaAs . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 241

1. Humenberger and H. Sitter (Linz, Austria)

The growth of polycrystaIIine silicon films by low pressure chemical vapour deposition at relatively low temperatures . . . . . . . . . . . . . . . . . . . .. 249

D. Meakin, P. Migliorato (Wembley, UK.), J. Stoemenos and N. A. Economou (Thessalonika, Greece)

Argon fluoride laser activated deposition of nitride films. . . . . . . . . . . .. 255 T. L. Tansley, L. Xin and Y. Ma (North Ryde, New South Wales, Australia)

Formation ofthin films by shock wave deposition method " 261 H. Ezumi, T. Endo, H. Yamada, K. Kuwahara and T. Kino (Hiroshima, Japan)

x CONTENTS

Effect of excess silicon on behaviour of LPCVD WSix films on silicon . . . .. 267 R. V. Joshi, Y. H. Kim, J. T. Wetzel and T. Lin (Yorktown Heights, NY, U.S.A.)

Alkoxide-derived amorphous Zr02 coatings . . . . . . . . . . . . . . . . . .. 273 D. Kundu, P. K. Biswas and D. Ganguli (Calcutta, India)

Electrodeposition technique and properties of semiconducting cadmium chalcogenide thin films from aprotic electrolytes . . . . . . . . . . . . . . . .. 279

K. S. Balakrishnan and A. C. Rastogi (New Delhi, India)

The role and structure of microclusters in metal deposition onto weak­bonding substrates . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 285

J. L. Robins and K. McIsaac (Nedlands, Western Australia, Australia)

Interaction of metal clusters with substrate steps. . . . . . . . . . . . . . .. 291 M. Krohn (Halle, G.D.R.)

Kinetic aspects ofthin film formation of ternary semiconductors. . .. . . . .. 297 B. Vengatesan (Madras, India), K. Somaskandan and N. Kanniah (Villupuram, India) and P. Ramasamy (Madras, India)

The oxygen electrode reaction in acid solutions on Ru0 2 electrodes prepared by the thermal decomposition method. . . . . . . . . . . . . . . . . . . . . .. 301

1. Melsheimer and D. Ziegler (Berlin, F.R.G.)

The influence of the physicochemical characteristics of the substrate surface on the deposited TiN film properties. . . . . . . . . . . . . . . . . . . . . . . . .. 309

M. Milic, M. Milosavljevic, N. Bibic, N. Popovic and Z. Bogdanov (Belgrade, Yugoslavia)

Electrical characteristics of ion-beam-synthesized aluminium oxide layers 317 A. D. Yadav and S. M. Bhatia (Bombay, India)

High-dose carbon ion implantation studies in silicon. . . . . . . . . . . . . .. 323 K. Srikanth, M. Chu, S. Ashok, N. Nguyen and K. Vedam (University Park, P A, U.S.A.)

Optical absorption of ion-implanted amorphous silicon. . . . . . . . . . . .. 331 K. L. Bhatia (Rohtak, India), W. Kratschmer and S. Kalbitzer (Heidel­berg, F.R.G.)

An investigation of thin gold films deposited by ionized cluster beams. . . .. 337 S. E. Huq, R. A. McMahon and H. Ahmed (Cambridge, U.K.)

Electrical and infrared studies of ion beam sputtered hydrogenated amor­phous germanium (a-Ge: H) films. . . . . . . . . . . . . . . . . . . . . . . . .. 343

M. K. Bhan, L. K. Malhotra and S. C. Kashyap (New Delhi, India)

Rapid modification of thin films by a large-area electron beam . . . . . . . .. 349 Y. C. Du, H. Wang, G. B. Jiang, D. C. Sun, Z. Q. Yu and F. M. Li (Shanghai, China)

Surface modification in nitrogen-ion-implanted stainless steel . . . . . . . .. 359 S. Shrivastava, R. D. Tarey, A. Jain and K. L. Chopra (New Delhi, India)

Microstructure and tribological property correlations of ion-implanted bearing steels . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 365

M. S. Misra, F. M. Kustas (Denver, CO, U.S.A.) and D. L. Williamson (Golden, CO, U.S.A.)

CONTENTS Xl

GROWTH AND EPITAXY

Growth kinetics of thin anodic oxides of silicon and its dependence on phosphorus concentration in silicon . . . . . . . . . . . . . . . . . . . . . . .. 373

S. K. Sharma, B. C. Chakravarty, S. N. Singh and B. K. Das (New Delhi, India)

Columnar and textural structures in obliquely deposited iron films. . . . . .. 379 H. Fujiwara (Hiroshima, Japan)

Kinetics of grain growth in doped polycrystalline silicon thin films. . . . ., 383 S. Kalainathan, R. Dhanasekaran and P. Ramasamy (Madras, India)

Comment on the tangent rule . . . . . . . . . . . . . . . . . . . . . . . . . .. 387 H. Fujiwara (Hiroshima, Japan), K. Hara, M. Kamiya (Kumamoto, Japan), T. Hashimoto (Tottori, Japan) and K. Okamoto (Chiba, Japan)

Characterization of ultrathin platinum overlayers deposited on a W(11O) surface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 393

S. M. Shivaprasad, R. A. Demmin and T. E. Madey (Gaithersburg, MD, U.S.A.)

Characterization of heteroepitaxial InSb films on GaAs prepared by metalor­ganic magnetron sputtering. . . . . . . . . . . . . . . . . . . . . . . . . . . .. 399

T. S. Rao, C. Halpin, 1. B. Webb, 1. P. Noad (Ottawa, Ontario, Canada) and K. Rajan (Troy, NY, U.S.A.)

Monolayer growth and direct writing of GaAs by pulsed laser metalorganic vapor phase epitaxy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 405

S. Iwai, T. Meguro, A. Doi, Y. Aoyagi and S. Namba (Saitama, Japan)

Microstructural, optical and electrical studies of sputtered epitaxial CdTe films . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 409

S. R. Das and J. G. Cook (Ottawa, Ontario, Canada)

Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 415

H. Amano, I. Akasaki, K. Hiramatsu, N. Koide and N. Sawaki (Nagoya, Japan)

Doping ofliquid phase epitaxial layers ofInGaAsP with group IV elements . 421 B. M. Arora, S. S. Chandvankar, R. Rajalakshmi, A. K. Srivastava and S. Chakravarty (Bombay, India)

Properties of undoped and manganese-doped InGaAsP grown by liquid phase electroepitaxy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 427

S. N. Iyer, A. Abul-Fadl, W. J. Collis and M. N. Khorrami (Greensboro, NC, U.S.A.)

Epitaxial nucleation and growth kinetics of indium phosphide in an In-PH 3-HCl-H2 system. . . . . . . . . . . . . . . . . . . . . . . . . . . . 437

V. N. Mani, R. Dhanasekaran and P. Ramasamy (Madras, India)

Low temperature liquid phase epitaxial growth and characterization of AlxGa1-xAs 443

S. Chakravarty, B. M. Arora, A. K. Srivastava, S. Subramanian and S. Anand (Bombay, India)

v Thin Solid Films, 164 (1988) v-xii

Contents

INTERFACES

Metal film barriers against the evaporation of volatile components during the heat treatment of metal-compound semiconductor contacts .... , . . . . . 1

I. Mojzes, R. Veresegyhazy, B. Kovacs, B. Pecz(Budapest, Hungary) and V. Malina (Prague, Czechoslovakia)

Quantitative interface roughness studies of copper oxide on copper . . . . .. 5 A. Roos, M. Bergkvist, c.-G. Ribbing (Uppsala, Sweden) and J. M. Bennett (China Lake, CA, U.S.A.)

Characterization of chemically modified CdTe surfaces . . . . . . . . . . . .. 13 D. N. Bose. S. Basu and K. C. Mandai (Kharagpur, India)

Fermi level pinning and chemical interactions at metal/metal organic CVD grown GaAs interfaces: Schottky barrier height. . . . . . . . . . . . . . . . .. 21

V. J. Rao, S. Phulkar and A. P. B. Sinha (Pune, India)

ANALYTICAL AND CHARACTERIZAnON TECHNIQUES

Deep core level electron energy loss studies on a silicon surface using slow electron energy loss spectroscopy. . . . . . . . . . . . . . . . . . . . . . . . .. 27

J. K. N. Sharma, B. R. Chakraborty and S. M. Shivaprasad (New Delhi, India)

A comparative study ofthin film diffusion measurements in metallic glasses by Rutherford backscattering spectrometry and Auger electron spectroscopy .. 33

S. K. Sh~rma, S. Banerjee, Kuldeep and A. K. Jain (Bombay, India)

Study of surface segregation of simultaneously evaporated Mn-Ag alloy films by means of ion scattering spectroscopy and Auger electron spectroscopy. .. 37

T. Hanawa (Suita, Japan), I. Katayama (Asahiku, Japan), F. Shoji and K. Oura (Suita, Japan)

Characterization of thin films and materials used in semiconductor tech­nology by spectroscopic ellipsometry. . ... . . . . . . . . . . . . . . . . . . .. 43

F. Ferrieu (Meylan, France) and J. H. Lecat (Bois Colombes, France)

Study of microstructure of amorphous Ge-Se films using spectroscopic ellipsometry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 51

S. Kumar, D. K. Pandya and K. L. Chopra (New Delhi, India)

The polarizability of truncated spheres and oblate spheroids on a substrate: comparison with experimental results . . . . . . . . . . . . . . . . . . . . . .. 57

M. M. Wind, P. A. Bobbert, J. Vlieger and D. Bedeaux (Leiden, The Netherlands)

VI CONTENTS

Theory of light reflection from a substrate sparsely seeded with spheres: comparison with an ellipsometric experiment. . . . . . . . . . . . . . . . . .. 63

P. A. Bobbert, J. Vlieger (Leiden, The Netherlands) and R. Greef (Southampton, U.K.)

Experimental electronic density of states of tin selenide measured on thin films 69 A. Bennouna (Marrakech, Morocco), M. Priol and A. Seignac (Rennes, France)

X-ray emission spectroscopy study of substoichiometric Biz -xSb.. S3 system. 75 B. B. Nayak, B. S. Acharya and S. K. Singh (Bhubaneswar, India)

The temperature dependence of superlattice spots in electron diffraction patterns ofthin layers of AgxTiSz formed by electrointercalation. . . . . . . 81

0. S. Rajora and A. E. Curzon (Burnaby, British Columbia, Canada)

Structural characterization of thin films of cadmium telluride. . . . . . . . . 85 S. Saha, U. Pal, B. K. Samantaray, A. K. Chaudhuri and H. D. Banerjee (Kharagpur, India)

X-ray studies ofthermal vibrations of thin lead films. . . . . . . . . . . . . .. 91 G. S. Narayana and N. K. Misra (Kharagpur, India)

Characterization ofTi1_xBxfilms deposited by a cosputtering method . . .. 95 T. Shikama (Oarai, Japan), U. Sakai, M. Fujitsuka, Y. Yamauchi, H. Shinno and M. Okada (Niiharigun, Japan)

EMERGING MATERIALS

Investigations of d.-plasma-deposited diamond-like carbon coatings . . . .. 103 R. S. Yalamanchi and G. K. M. Thutupalli (Bangalore, India)

X-ray· characterization of epitaxially grown dilute magnetic semiconductors Zn1-xFexSe (0 ~ x ~ 0.22) .....................• '.' . . . .. 111

S. B. Qadri, B. T. Jonker, J. J. Krebs and G. A. Prinz (Washington, DC, U.S.A.)

Structural and electrical properties of screen-printed thick films of YBazCu 30 7 _ xsuperconductors 115

D. Bhattacharya, C. K. Maiti, P. Pramanik, T. K. Dey, S. K. Ghatak, K. L. Chopra (Kharagpur, India), S. C. Kashyap, D. K. Pandya and B. Gogoi (New Delhi, India)

Superconductivity behaviour in screen-printed YBaZCu 30 7 films . . . . . .. 119 U. V. Varadaraju, G. V. Subba Rao, K. D. Chandrasekaran and A. Baradarajan (Madras, India)

BASIC PROPERTIES

Electromigration in thin solid films. . . . . . . . . . . . . . . . . . . . . . . .. 123 J. J. B. Prasad and K. V. Reddy (Madras, India)

Investigation of sliding contact resistance of Ni-CrlAu and Ni-CrIAu-SiOz thin resistive films " 129

A. Banovec and A. Zalar (Ljubljana, Yugoslavia)

CONTENTS Vll

Study of boron coatings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 135 V. C. George, A. K. Dua and R. P. Agarwala (Bombay, India)

Size-dependent quantum and classical transport in metallic thin films. . . .. 141 G. Govindaraj (Madras, India) and V. Devanathan (Pondicherry, India)

Adhesion of thin metallic films to non-metallic substrates. . . . . . . . . .. 147 S. A. Varchenya, A. Simanovskis and S. V. Stolyarova (Riga, U.S.S.R.)

Measurement of the adhesion of silver films to oxidized silicon. . . . . . . .. 153 A. Kikuchi, S. Baba and A. Kinbara (Tokyo, Japan)

Simultaneous measurement of coating thickness and deposition stress during thermal spraying . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 157

S. Kuroda, T. Fukushima and S. Kitahara (Tokyo, Japan)

Resistivity anisotropy of nickel films induced by oblique incidence sputter deposition - " . .. 165

K. Kuwahara (Hiroshima, Japan) and S.' Shinzato (Okinawa, Japan)

Internal stress and adhesion of d.-sputtered MgO films on glass substrates. 169 S. Baba, A. Kinbara (Tokyo, Japan), T. Kajiwara and K.Watanabe (Kamakura, Japan)

Electrical properties of thulium oxide thin films. . . . . . . . . . . . . . . . .. 175 T. Zdanowicz (Wroclaw, Poland)

The field effect of the electrical conductance ofdiscontinuous thin metal films 183

t K. Uozumi (Setagaya, Japan)

Electrical conduction in thin film diamond . . . . . . . . . . . . . . . . . . .. 187 K. Srikanth, S. Ashok, A. Badzian, T. Badzian and R. Messier (University Park, PA, U.S.A.)

Determination of thickness uniformity and magnetic bubble parameters for garnet thin films by Faraday rotation 191

S. Chaklanobis, D. C. Khan (Kanpur, India) and B. U. M. Rao (Bombay, India)

AMORPHOUS MATERIALS

Defect model in thin dielectric films. . . . . . . . . . . . . . . . . . . . . . . .. 195 T. K. Lin and V. K. Agarwal (Lubbock, TX, U.S.A.)

A comparison between amorphous Ni-Zr alloys formed by solid state reaction and by codeposition . . . . . . . . . . . . . . . . . . . . . . . . . . .. 199

G. V. Chandrashekhar, D. Gupta, S. Newcomb, F. H. M. Spit and K. N. Tu (Yorktown Heights, NY, U.S.A.)

Formation of stoichiometric InSe compound films. . . . . . . . . . . . . . .. 207 R. Rousina and G. K. Shivakumar (Gujarat, India)

Hydrogenated amorphous Si-C alloy prepared by chemical vapour deposition 213 A. Yoshida, Y. Yamada, T. Nakamura and H. Yonezu (Toyohashi,Japan)

An interesting unconventional photoinduced change in the dark conductivity ofa-Si:F:H 217

S. C. De, G. Ganguly, S. Ray and A. K. Barua (Calcutta, India)

viii CONTENTS

Growth and properties of glow-discharge hydrogenated amorphous silicon­carbon alIoys from silane-propane mixtures . . . . . . . . . . . . . . . . . .. 221

A. Qayyum, J. I. B. Wilson, K. Ibrahim, S. K. AI-Sabbagh and U. Eicker (Edinburgh, U.K.)

Light-induced changes in magnetron-sputtered hydrogenated amorphous silicon films . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 227

D. Das, R. Banerjee, A. K. Batabyal and A. K. Barua (Calcutta, India)

RJ. power dependence of the Staebler-Wronski effect . . . . . . . . . . . . 233 P. K. Acharya, L. K. Malhotra and K. L. Chopra (New Delhi, India)

Stability ofdangling bonds in amorphous hydrogenated silicon . . . . . . .. 239 S. Zafar and E. A. Schiff(Syracuse, NY, US.A.)

IR spectroscopy of a-Si1-xSnx:H films , 243 R. S. Katiyar, O. Resto, R. Perez, M. Gomez and Z. Weisz (Rio Piedras, PR,US.A.)

PHOTOVOLTAICS

Electrical properties of pure, doped and sensitized organic dye films . 249 S. C. Mathur, D. C. Dube (New Delhi, India) and G. D. Sharma (Jodhpur, India)

A novel electroplating technique for cadmium telIuride films in non-aqueous medium .- 255

R. B. Gore and R. K. Pandey (Bhopal, India)

Structural properties ofSnOz:F films deposited by spray pyrolysis technique 261 C. Agashe, B. R. Marathe, M. G. Tackwale and V. G. Bhide (Pune, India)

Applic'ation of spectroscopic ellipsometry to study the effect of surface treatments on cadmium telIuride films . . . . . . . . . . . . . . .. '. '. . . . . . 265

B. R. Mehta, S. Kumar, K. Singh and K. L. Chopra (New Delhi, India)

Characterization of p-CuInSez films for photovoltaics grown' by a chemical deposition technique . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 269

J. C. Garg, R. P. Sharma and K. C. Sharma (Jaipur, India)

Effect of applied external magnetic field on the relationship between the arrangement of the substrate and the resistivity ofaluminium-doped ZnO thin films prepared by d. magnetron sputtering . . . . . . . . . . . . . . . . 275

T. Minami, H. Nanto, H. Sato and S. Takata (Kanazawa, Japan)

D.c. electrical properties of evaporated thin films ofCdTe. . . . . . . . 281 R. D. Gould and C. J. Bowler (Keele, O.K.)

Exciton diffusion in thin CUzO films . 289 E. Fortin and E. Tseli:pis (Ottawa, Ontario, Canada)

Photovoltaic properties of ZnO/p-CdTe thin film heterojunctions . 295 M. S. Tomar (Duluth, MN, U.S.A.)

Physical properties of II-VI binary and multicomponent compound films and heterostructures fabricated by chemical vapour deposition . . . . . . . . . . . 301

T. M. Razykov (Tashkent, U.S.S.R.)

CONTENTS ix

Plasma enhanced chemical vapour deposition silicon nitride for micro­electronic applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 309

M. Gupta, V. K. Rathi, S. P. Singh, 0. P. Agnihotri and K. S. Chari (New Delhi, India)

The effects of temperature and bias illumination on the spectral sensitivity of CdS-CuxS heterojunctions , 313

P. C. Pande, G. J. Russell and J. Woods (Durham, U.K.)

Stress effect in junctions of n-type microcrystalline Si: H with p-type silicon. 321 M. Utsunomiya (Shiga, Japan) and A. Yoshida (Toyohashi, Japan)

THIN FILM DEVICES

Application of tantalum based thin film devices in active matrix addressed liquid crystal displays . 327

S. A. Agnihotry, K. K. Saini and S. Chandra (New Delhi, India)

Structure, optical and electro-optical properties of polycrystalline W03 and Mo03 thin films prepared by chemical vapour deposition . 333

A. Donnadieu, D. Davazoglou and A. Abdellaoui (Montpellier, France)

Electrical properties offerroelectric thin film KN03 memory devices ..... 339

255 A. Kulkarni, G. Rohrer, S. Narayan and L. McMillan (Houghton, MI, U.S.A.)

Thin film solid state cells using Rb4Cu16I7CI13 electrolyte and their limitations. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 345

R. N. Prasad, N. M. Abhyankar, S. D. Phadke and R. N. Karekar (Pune, India)

Switching behaviour of plasma-polymerized thin polyfuran films .... 353 P. K. Abraham and K. Sathianandan (Cochin, India)

269 Fabrication and characterization of solid state image intensifier panels

P. K. C. Pillai, N. Shroff, A. Singh and R. Kumar (New Delhi, India) 357

Low-voltage-driven ZnS:Mn thin" film electroluminescent devices using insulating dielectric ceramic sheets . . . . . . . . . . . . . . . . . . . . . . . . . 363

275 H. Nanto, T. Minami, S. Murakami and S. Takata (Kanazawa, Japan)

Electrochromism in polycrystalline W03 thin films prepared by chemical

281 vapour deposition at high temperature. . . . . . . . . . . . . . . . . . . . . . .

D. Davazoglou and A. Donnadieu (Montpellier, France) 369

289 Medium optical index material tailoring by plasma-enhanced vapour deposition. . . . . . . . . . . . . . . . . . . . . . . . . . .

chemical 375

295 H. Zorc and R. Sinovcevic (Zagreb, Yugoslavia)

Reactively sputtered ZnO:AI films for energy-efficient windows . 381 Z.-c. Jin, I. Hamberg, C. G. Granqvist (Gothenburg, Sweden), B. E.

301 Sernelius and K.-F. Berggren (Linkoping, Sweden)

Adjustable selective profiles using cermet absorbing films . . . . . . . . . . . . 387 C. Sella (Meudon, France) and J. Lafait (Paris, France)

x CONTENTS

Modelling magneto-optical thin film media for optical data storage . . . . .. 391 K. Balasubramanian, A. S. Marathay and H. A. Macleod (Tucson, AZ, U.S.A.)

Structure and properties of WIC and NilC multilayer films . . . . . . . . . .. 405 C. Sella, K. Youn (Meudon, France), R. Barchewitz, M. Arbaoui (Paris, France) and R. Krishnan (Meudon, France)

Bi-stable photoconductive-electroluminescent type of light amplifier with optical feedback. . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 411

Z. Porada and E. Schabowska-Osiowska (Cracow, Poland)

MICROELECTRONIC APPLICAnONS

Failure mechanisms ofTiN thin-film diffusion barriers. . . . . . . . . . . . .. 417 N. Kumar, K. Pourrezaei (Philadelphia, PA, U.S.A.), B. Lee and E. C. Douglas (Somerville, NJ, U.S.A.)

Synthesis of buried silicon nitride layers by rapid thermal annealing. . . . .. 429 C. M. S. Rauthan, A. Chand, S. Chandra and G. Bose (New Delhi, India)

New models for ohmic contacts to GaAs. . . . . . . . . . . . . . . . . . . . .. 435 A. K. Kulkarni and C. Lai (Houghton, MI, U.S.A.)

Properties of sputtered nitride semiconductors. . . . . . . . . . . . . . . . .. 441 T. L. Tansley, R. J. Egan (North Ryde, New South Wales, Australia) and E. C:Horrigan (Lindfield, New South Wales, Australia)

Molybdenum disilicide formation by i.on beam mixing and rapid thermal annealingofMo/Si(I11) 449

R. S. Rastogi, V. D. Vankar and K. L. Chopra (New Delhi, India)

D.c. conductivity of highly disordered NiCr-O thin films . . . . . . . . . . .. 455 H. Dintner, H. Bartuch (Jena, G.D.R.), A. Heinrich (Dresden, G.D.R.), F. Thrum (Jena, G.D.R.), Ch. Gladun (Dresden, G.D.R.) and G.Holzhuter (Rostock, G.D.R.)

Effect of densification temperature on the Fourier transform infrared analysis ofborophosphosilicate glass films. . . . . . . . . . . . . . . . . . . . . . . . .. 461

B. N. Mehrotra (Santa Clara, CA, U.S.A.)

A comparative study of silver photodoping in chalcogenide films by means of extended X-ray absorption fine structure and kinetics measurements . . . ., 467

J. M. Oldale, J. Rennie and S. R. Elliott (Cambridge, U.K.)

Selective deposition of thin films by substrate argon ion bombardment . . .. 475 C. Nender, S. Berg and G. Gelin (Uppsala, Sweden)

Time-resolved study of thin nickel silicide layer growth at the nickel film-Si(I00) interface. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. 481

P. K. John, H. Frohlich, A. C. Rastogi and B. Y. Tong (London, Ontario, Canada)

Electrical characteristics of PtSi formed by incoherent light annealing. . . ., 487 A. S. Pedersen (Lyngby, Denmark), J. Chevallier and A. N. Larsen (Aarhus, Denmark)

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" 411

I 417

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487

CONTENTS

Treatment ofWTi contacts on silicon with low energy argon ions ..... " 493 M. Milosavljevic, N. Bibic (Belgrade, Yugoslavia), I. H. Wilson (Guild­ford, U.K.) and D. Perusko (Belgrade, Yugoslavia)

Properties of selective low pressure chemically vapor deposited tungsten films produced by hydrogen reduction in a cold wall system. . . . . . . . . .. 501

R. V. Joshi, D. A. Smith, S. Basavaiah and T. Lin (Yorktown Heights, NY, U.SA)

AUTHOR INDEX 509 SUBJECT INDEX 513 ABSTRACTS . . . 523