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UMS MMIC Solutions for Radars and Sensors

United Monolithic Semiconductors is deeply involved since more than 10 years in the development and production of sensors for the automotive market. This leads to a huge knowledge of the sensor and radars functionalities and production in the millimetre wave range, in particular for the 5.8GHz, 24GHz and 77GHz ISM frequency bands. The UMS offer for such function is very large, and covers nearly all applications in those ISM frequency bands, such as positioning sensors, level sensors, identification sensors, automation sensors in various fields: agricultural, water management, storage, logistics, and transportation. The typical architecture of radar is based on the frequency generation (VCO) often use also as the transmitter, and local oscillator for the receiver (homodyne), and a mixer for the receiver. Other circuits such as multipliers and amplifiers can be used in high frequency and/or more complex systems. A typical high complexity level radar sensor is shown on the following figure. This architecture is multi-mode, multi beam, multi channel, basically used for high end automotive sensors.

PULSED / FmCW / FSK … Multi-channel / Switched

xm

xn

pxn

LRR @ 77GHz SRR @ 24GHz

Fundamental or sub-harmonic LO distribution

Figure 1: Front-End architecture

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The high production volume for such MMIC’s in automotive market leads to a mature industrial process, taking all advantages of integrated GaAs function versus the discrete counterpart, such as reliability, easy to use, low cost, reproducibility and so on. United Monolithic Semiconductors is now offering this knowhow through its product portfolio for a wide range of application from the simplest one to the more complex one, for the full benefit to the millimetre wave sensors industry. In particular, all the basic building blocks are available to simplify the realisation of all kind of sensors for the ISM frequency bands. Let’s review a sampling of UMS product offer for ISM sensors: First of all, the most basic need is the frequency generation. The UMS offer is based on a family of dedicated VCO’s. Thanks to the integrated approach, it is possible to offer the full function in one component, as shown on Figure 2, feathering the frequency generation, the times two multiplier, the output buffer amplifier, and the first level of the feedback loop with a times eight frequency divider that provides a signal fully compatible with low cost standard PLL device. Bias is fully integrated, and the part is offered in a standard SMT package (QFN4x4).

Main Characteristics in QFN package

Symbol Parameter Min Typ Max Unit

F_out Specified output frequency range 24 24.125 24.25 GHz

F_vco Oscillator frequency F_out/2 GHz

IF_out Output Intermediate frequency F_out/16 GHz

Pout Output power at F_out 13 16 dBm

PFI Output power at Intermediate frequency (IF) -3 0 dBm

PN SSB Phase Noise @ F_out @ 100 kHz -90 -80 dBc/Hz

-1 3 0 ,0 0

-1 2 0 ,0 0

-1 1 0 ,0 0

-1 0 0 ,0 0

-9 0 ,0 0

-8 0 ,0 0

-7 0 ,0 0

-6 0 ,0 0

-5 0 ,0 0

-4 0 ,0 0

-3 0 ,0 0

-2 0 ,0 0

-1 0 ,0 0

0 ,0 0

1 ,0 0 1 0 ,0 0 1 0 0 ,0 0 1 0 0 0 ,0 0

O ffs e t F re q u e n c y fro m C a r rie r (k H z )

Ph

as

e N

ois

e (

dB

c/H

z)

---- 40°C40°C40°C40°C

100°C100°C100°C100°C

Phase Noise vs Offset frequency from carrier

Over Operating Tuning Range

-1 3 0 ,0 0

-1 2 0 ,0 0

-1 1 0 ,0 0

-1 0 0 ,0 0

-9 0 ,0 0

-8 0 ,0 0

-7 0 ,0 0

-6 0 ,0 0

-5 0 ,0 0

-4 0 ,0 0

-3 0 ,0 0

-2 0 ,0 0

-1 0 ,0 0

0 ,0 0

1 ,0 0 1 0 ,0 0 1 0 0 ,0 0 1 0 0 0 ,0 0

O ffs e t F re q u e n c y fro m C a r rie r (k H z )

Ph

as

e N

ois

e (

dB

c/H

z)

---- 40°C40°C40°C40°C

100°C100°C100°C100°C

-1 3 0 ,0 0

-1 2 0 ,0 0

-1 1 0 ,0 0

-1 0 0 ,0 0

-9 0 ,0 0

-8 0 ,0 0

-7 0 ,0 0

-6 0 ,0 0

-5 0 ,0 0

-4 0 ,0 0

-3 0 ,0 0

-2 0 ,0 0

-1 0 ,0 0

0 ,0 0

1 ,0 0 1 0 ,0 0 1 0 0 ,0 0 1 0 0 0 ,0 0

O ffs e t F re q u e n c y fro m C a r rie r (k H z )

Ph

as

e N

ois

e (

dB

c/H

z)

---- 40°C40°C40°C40°C

100°C100°C100°C100°C

Phase Noise vs Offset frequency from carrier

Over Operating Tuning Range

T=100°C

T=25°C

T= - 40°C

T=100°C

T=25°C

T= - 40°C

Main Features � K-band VCO+K-band buffers+Prescalar/8 � Fully integrated VCO (no need for external Resonator � Low phase noise � High temperature range � High frequency stability � On chip self biased devices � Standard SMD package : 24L-QFN4x4

Main Characteristics in QFN package

Symbol Parameter Min Typ Max Unit

F_out Specified output frequency range 24 24.125 24.25 GHz

F_vco Oscillator frequency F_out/2 GHz

IF_out Output Intermediate frequency F_out/16 GHz

Pout Output power at F_out 13 16 dBm

PFI Output power at Intermediate frequency (IF) -3 0 dBm

PN SSB Phase Noise @ F_out @ 100 kHz -90 -80 dBc/Hz

-1 3 0 ,0 0

-1 2 0 ,0 0

-1 1 0 ,0 0

-1 0 0 ,0 0

-9 0 ,0 0

-8 0 ,0 0

-7 0 ,0 0

-6 0 ,0 0

-5 0 ,0 0

-4 0 ,0 0

-3 0 ,0 0

-2 0 ,0 0

-1 0 ,0 0

0 ,0 0

1 ,0 0 1 0 ,0 0 1 0 0 ,0 0 1 0 0 0 ,0 0

O ffs e t F re q u e n c y fro m C a r rie r (k H z )

Ph

as

e N

ois

e (

dB

c/H

z)

---- 40°C40°C40°C40°C

100°C100°C100°C100°C

Phase Noise vs Offset frequency from carrier

Over Operating Tuning Range

-1 3 0 ,0 0

-1 2 0 ,0 0

-1 1 0 ,0 0

-1 0 0 ,0 0

-9 0 ,0 0

-8 0 ,0 0

-7 0 ,0 0

-6 0 ,0 0

-5 0 ,0 0

-4 0 ,0 0

-3 0 ,0 0

-2 0 ,0 0

-1 0 ,0 0

0 ,0 0

1 ,0 0 1 0 ,0 0 1 0 0 ,0 0 1 0 0 0 ,0 0

O ffs e t F re q u e n c y fro m C a r rie r (k H z )

Ph

as

e N

ois

e (

dB

c/H

z)

---- 40°C40°C40°C40°C

100°C100°C100°C100°C

-1 3 0 ,0 0

-1 2 0 ,0 0

-1 1 0 ,0 0

-1 0 0 ,0 0

-9 0 ,0 0

-8 0 ,0 0

-7 0 ,0 0

-6 0 ,0 0

-5 0 ,0 0

-4 0 ,0 0

-3 0 ,0 0

-2 0 ,0 0

-1 0 ,0 0

0 ,0 0

1 ,0 0 1 0 ,0 0 1 0 0 ,0 0 1 0 0 0 ,0 0

O ffs e t F re q u e n c y fro m C a r rie r (k H z )

Ph

as

e N

ois

e (

dB

c/H

z)

---- 40°C40°C40°C40°C

100°C100°C100°C100°C

Phase Noise vs Offset frequency from carrier

Over Operating Tuning Range

T=100°C

T=25°C

T= - 40°C

T=100°C

T=25°C

T= - 40°C

Main Features � K-band VCO+K-band buffers+Prescalar/8 � Fully integrated VCO (no need for external Resonator � Low phase noise � High temperature range � High frequency stability � On chip self biased devices � Standard SMD package : 24L-QFN4x4

Figure 2: VCO dedicated to the 24GHz ISM frequency band. For the 77GHz ISM frequency band, the UMS offer is also based on fully integrated VCO’s, such as the ones describes on the Figure 3. In order to achieve performances and produce ability, those VCO’s are set at a low frequency compared to the 77GHz. A complementary part is then needed to achieve the right output frequency and power describe in the Figure 4 as the Transmit multifunction (Tx). This last part includes the multipliers and buffer amplifiers that are required to operate in the 77GHz ISM frequency band.

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CHV2242cCHV2242c

CHV2270CHV2270

nn

x2x2

x2x2

�pHEMT�External resonator

�Fout = 38GHz / Pout = 7dBm�PN = -75dBc/Hz @100kHz (@100kHz IF)

�HBT

�Fully integrated�Fout = 12.75GHz / Pout=13dBm

�PN = -100dBc/Hz @100kHz (@100kHz IF)

CHV2242cCHV2242c

CHV2270CHV2270

nn

x2x2

nn

x2x2

x2x2x2x2

�pHEMT�External resonator

�Fout = 38GHz / Pout = 7dBm�PN = -75dBc/Hz @100kHz (@100kHz IF)

�HBT

�Fully integrated�Fout = 12.75GHz / Pout=13dBm

�PN = -100dBc/Hz @100kHz (@100kHz IF)

Figure 3: Fully integrated VCO dedicated to the 77GHz ISM frequency band.

Due to the very high frequency (77GHz) it was found optimum to share the function in a set of two parts, each one fabricated on the best process to insure at the same time performances and yield, leading to low cost and easy to use components. For the VCO’s, as the frequency is kept low enough, a standard SMT plastic packaging can be done, and then those parts are offered both in bare die, and QFN package.

x2

x6

x2

CHU2277CHU2277 CHU3277CHU3277

CHU3377CHU3377 �Wire bonding assembly

�Self-biased

�AM noise: -140dBm/Hz @100kHz

�Pout: from 13 to 17dBm

�Pin: 0dBm

�AM noise: -140dBm/Hz @100kHz

x2

x6x6

x2

CHU2277CHU2277 CHU3277CHU3277

CHU3377CHU3377 �Wire bonding assembly

�Self-biased

�AM noise: -140dBm/Hz @100kHz

�Pout: from 13 to 17dBm

�Pin: 0dBm

�AM noise: -140dBm/Hz @100kHz

Figure 4: Transmit multifunction dedicated to the 77GHz ISM frequency band.

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The second basic function that is required for sensor development is the receiver. Here also UMS offer a family of products dedicated to each ISM frequency band. The first example is the 24GHz fully integrated receiver, as shown on figure 5.

Main Features � Typical Noise figure : 7 dB � Stable gain vs temperature 23 ± 2.5 dB � Single supply Voltage: +5V � Devices self biased on chip � Standard SMD package : QFN 24L 4x4

Main Characteristics

Symbol Parameters Min Typ Max Unit

RX_RF Frequency range 22 24.5 GHz

Conversion Gain 19 23 27 dB

SSB Noise figure (IF=1MHz) 7 dB

RX_LO / RX_RF Input / Output Return Loss 8 15 dB

Conversion Gain vs FrequencyPLO= 0dBm

15161718192021222324252627282930

22 22,5 23 23,5 24 24,5 25 25,5 26

Con

vers

ion

Gai

n (d

B)

25°C

-40°C

100°C

Conversion gain vs RF Input PowerPLO= 0dBm FLO=24.25GHz

15161718192021222324252627282930

-40 -38 -36 -34 -32 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12

RF Input power (dBm)

Co

nve

rsio

n G

ain

(dB

)

100°C

25°C

-40°C

Main Features � Typical Noise figure : 7 dB � Stable gain vs temperature 23 ± 2.5 dB � Single supply Voltage: +5V � Devices self biased on chip � Standard SMD package : QFN 24L 4x4

Main Characteristics

Symbol Parameters Min Typ Max Unit

RX_RF Frequency range 22 24.5 GHz

Conversion Gain 19 23 27 dB

SSB Noise figure (IF=1MHz) 7 dB

RX_LO / RX_RF Input / Output Return Loss 8 15 dB

Conversion Gain vs FrequencyPLO= 0dBm

15161718192021222324252627282930

22 22,5 23 23,5 24 24,5 25 25,5 26

Con

vers

ion

Gai

n (d

B)

25°C

-40°C

100°C

Conversion gain vs RF Input PowerPLO= 0dBm FLO=24.25GHz

15161718192021222324252627282930

-40 -38 -36 -34 -32 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12

RF Input power (dBm)

Co

nve

rsio

n G

ain

(dB

)

100°C

25°C

-40°C

Figure 5: Fully integrated Receiver dedicated to the 24GHz ISM frequency band.

This particular part feature a low noise amplifier, a mixer and a local oscillator buffer amplifier that makes it fully compatible of the CHV2411 describe earlier, and is also offered in the same standard SMT package (QFN4x4).

CHM2179b / CHM2378aCHM2179b / CHM2378a

CHA1077aCHA1077a

�BES

�Single or dual mixer

�CL : 7dB

�NF=18dB @ 100kHz IF

�pHEMT

�G=18dB

�NF=4dB

CHM2179b / CHM2378aCHM2179b / CHM2378a

CHA1077aCHA1077a

�BES

�Single or dual mixer

�CL : 7dB

�NF=18dB @ 100kHz IF

�pHEMT

�G=18dB

�NF=4dB

Figure 6: Fully integrated Receiver and low noise amplifier dedicated to the 77GHz

ISM frequency band.

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Those two parts used together helps to build a very simple and performing sensor in the 24GHz ISM frequency band. For the 77GHz ISM frequency band, receivers are also available, as shown on Figure 6, together with an optional low noise amplifier at 77GHz. In some occasion it could be necessary to add such low noise amplifier in front of the receiver, to improve the performances such as range or sensitivity increase. The same kind of option is also provided for the 24GHz ISM frequency band, with a specific low noise amplifier (CHA2411-QDG) offered in the same SMT package (QDN4x4). In addition UMS propose also a family of switch that can be used for complex multi beam system for these ISM frequency bands (CHS2411-QDG). For the 77GHz ISM frequency band, the parts are mainly offered in die form, due to the very high frequency and the limitations of the standard QFN. So UMS developed a different packaging approach in order to offer also the 77GHz parts in a SMT package, described in Figure 7 for the transmitter. The same kind of package is also available for the receiver.

CHU3377

x6

Wave guide interface

DC, IF & sub-harmonics Pins

MMuull tt ii CChhiipp PPaacckkaaggee iinn

WW--bbaanndd

Figure 7: UMS SMT packaging approach for 77GHz ISM applications. This packaging demonstrates the feasibility of a surface mount approach for high millimetre wave application, compatible with production. Now, for high volume production, typically for the automotive long range radar (LRR), it was mandatory to develop a low cost version of this package. UMS is currently in development phase for such a package, based on a modified version of the QFN in order to make it low cost and compatible with high volume product, maintaining the performances at the required level.

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The other UMS approach is to offer full chip-sett for a dedicated application, and three examples are given in the following. On Figure 8, a full chip-set for a local oscillator distribution chain at 77GHz is described.

x2

77GHz (!LO

12.75GHz

CHA1077a

38GHz

X3

F = 76-77GHz Pout = +9dBm

CHX1094 CHU2277

Chip or plastic package

Figure 8: UMS typical chip-set for 77GHz local oscillator distribution chain for ISM

applications: CHX1094, CHU2277 & CHA1077a. Figure 9 gives a typical 24GHz sensor architecture based on a four chip chip-set. It is a complex multi beam approach that can be tailored to simpler needs.

RF_in

8

x2V_tune

IF_out

CHV2411 CHS 2411

CHR2411

RF_out

RX_LOTX_AUX

TX_OUT

RX_RF

14dB coupler

CHA2411

RF_in

8

x2V_tune

IF_out

CHV2411 CHS 2411

CHR2411

RF_out

RX_LOTX_AUX

TX_OUT

RX_RF

14dB coupler

CHA2411

RF_in

8

x2V_tune

IF_out

CHV2411 CHS 2411

CHR2411

RF_out

RX_LOTX_AUX

TX_OUT

RX_RF

14dB coupler

CHA2411

Figure 9: UMS typical chip-set for 24GHz for sensor: CHV2411a, CHR2411,

CHA2411 & CHS2411.

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Figure 10 show a family a product that can be used in typical 5.8GHz sensor.

CHA3666

VD1 VD2

RFin RFout

P1 P2 N2

UMS

VD1 VD2

RFin RFout

P1 P2 N2

UMS

LNA 5.8-16GHz G = 20dB NF = 2.1dB Pout1dB =16dBm

MPA 5-21GHz G = 15dB Psat = 20dBm

CHA3664 CHA4664

VGA 5.5-16GHz G = 23dB

23dB range Gctrl Pout 1dB = 23dBm

RF in RF out

Vd

Gc1 Vg12 Gc2 Gc3 Vg3

RF in RF out

Vd

Gc1 Vg12 Gc2 Gc3 Vg3

IN

Out 2 Out 1

V2 V1

CHS5100

Switch 0-20GHz L = 1.2dB Pin1dB = 20dBm

EC2612

Transistor G = 14dB NF = 0.5dB

Figure 10: UMS typical products for 5.8GHz for sensor: EC2612, CHS5100,

CHA3666, CHA3664 & CHA4664.