CDE’2013

9thSpanishConferenceOnElectronDevices

PalaciodeCongresosCondeAnsúrez

Valladolid,SpainFebruary12‐14,2013

www.cde2013.es

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COMMITTEES

LOCALCOMMITTEE

LuisAlbertoBailónVega

Dpt.ElectricidadyElectrónica,UVa

IsmaelBarbaGarcía

Dpt.ElectricidadyElectrónica,UVa

HelenaCastánLanaspa (chair)

Dpt.ElectricidadyElectrónica,UVa

SalvadorDueñasCarazo

Dpt.ElectricidadyElectrónica,UVa

HéctorGarcíaGarcía (papers)

Dpt.ElectricidadyElectrónica,UVa

MiguelÁngelGonzálezRebollo

Dpt.FísicadelaMateriaCondensada,CristalografíayMineralogía,UVa

AnaGrandeSáez

Dpt.ElectricidadyElectrónica,UVa

JuanJiménezLópez

Dpt.FísicadelaMateriaCondensada,CristalografíayMineralogía,UVa

AnaCristinaLópezCabeceira

Dpt.ElectricidadyElectrónica,UVa

LuisAlbertoMarquésCuesta

Dpt.ElectricidadyElectrónica,UVa

JoséRepresaFernández

Dpt.ElectricidadyElectrónica,UVa

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ADVISORYCOMMITTEE

JoséMillán‐IMB‐CNM‐CSIC (CDEAdvisoryCommitteeChair)JuanA.deAgapito‐UniversidadComplutensedeMadridXavierAymerich‐UniversidadAutónomadeBarcelonaLuisBailón‐UniversidaddeValladolidFernandoBriones‐IMM‐CNM‐CSICEnriqueCalleja‐UniversidadPolitécnicadeMadrid/ISOMPedroCartujo‐UniversidaddeGranadaLuisCastañer‐UniversidadPolitécnicadeCataluñaXavierCorreig‐UniversidadRoviraiVirgiliEugenioGarcíaMoreno‐UniversidaddelasIslasBalearesJavierGracia‐CEITF.JavierGutiérrezMonreal‐ISI‐CSICAntonioLuque‐UniversidadPolitécnicadeMadrid/IESJoanRamónMorante‐UniversidaddeBarcelona/IRECElíasMuñozMerino‐UniversidadPolitécnicadeMadrid/ISOMDanielPardo‐UniversidaddeSalamancaJuanPiqueras‐UniversidadAutónomadeMadridFranciscoSerra‐UniversidadAutónomadeBarcelona/CNM‐CSIC

TECHNICALCOMMITTEE

AntonioGarcíaLoureiro‐UniversidaddeSantiagodeCompostelaRamónAlcubilla‐UniversidadPolitécnicadeCatalunyaCarlosAlgora‐UniversidadPolitécnicadeMadrid/IESAngelLuisAlvarezCastillo‐UniversidadReyJuanCarlosJavierBerganzo‐IKERLANCarlesCané‐IMB‐CNM‐CSICFernandoCalle‐UniversidadPolitécnicadeMadrid/ISOMEnriqueCastaño‐CEITSalvadorDueñasCarazo‐UniversidaddeValladolidIgnacioGarcés‐UniversidaddeZaragozaTomásGonzález‐UniversidaddeSalamancaMaríaJesúsHernández‐UniversidadAutónomadeMadridCarmenHorrillo‐ISI‐CSICPedroIbañezEreño‐ROBOTIKERFernandoLópez‐UniversidadCarlosIIIJuanA.LópezVillanueva‐UniversidaddeGranadaLluisMarsal‐UniversidadRoviraiVirgiliIgnacioMártildelaPlaza‐UniversidadComplutensedeMadridEnriqueMaset‐UniversidaddeValenciaMontserratNafria‐UniversidadAutónomadeBarcelonaIsabelObietaVillalonga‐INASMETRodrigoPicos‐UniversidaddelasIslasBalearesJoséManuelQueroReboul‐UniversidaddeSevilla/AICIAJoséMaríaRipaldaCobian‐IMM‐CNM‐CSICAlbertRomanoRodríguez‐UniversidaddeBarcelona

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SUPPORTEDBY:

TECHNICALCO‐SPONSORSHIP:

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WELCOMELETTER

The 9th Spanish Conference on Electron Devices brings together the work of bothresearchgroupsandcompaniesonthefieldofelectronicdevices.Thiseditionwilltakeplace fromthe12th to the14thofFebruaryof2013, inValladolid,carryingonwithaseriesofpreviouseventsinPalmadeMallorca(2011),SantiagodeCompostela(2009),El Escorial (Madrid, 2007), Tarragona (2005), Calella de la Costa (2003), Granada(2001),Madrid(1999)andBarcelona(1997).

Asusual,theConferenceprogramconsistsofinvitedandcontributedpapersorganizedinthetopicsessions.TheCongresswillconcludewithaworkshopaboutSolarEnergy,whichwillbecomposedby7talks,22postersandaroundtablewiththeparticipationofcompaniesfromtheSolarEnergyClusterofCastillaandLeón. JustbeforetheCDEconferenceopening,aMiniColloquium(MQ)ofElectronDeviceSociety(EDS)willtakeplaceatthesamevenueasCDE,withoutadditionalregistrationfees.Inthisway,alltheCDEparticipantsmayattendtobothevents.

The totalnumberof contributions is122:2plenary talks,11 invited talks,25talks,and84posters,distributedinthefollowingtopics:

S1 ProcesstechnologyfordevicesandsimulationS2 DevicemodelingS3 Sensors,actuatorsandmicro/nanosystemsS4 EmergingdevicesS5 CharacterizationandreliabilityS6 Solarenergy:thermalandphotovoltaicdevices

MostofthecontributionspresentedatthisconferencecomefromSpanishUniversitiesandResearchCenters.30%ofthemarefruitofthecooperationbetweenSpanishandforeigner institutions and 15% of the works come from researchers of foreigncountries. It is important to point out the high number of collaborations amongdifferent institutions (41%), so indicating the increase of cooperative work of theSpanishresearchgroupsintheCDEscope.Because of the delicate economic situation, fundings to the Congress have beensignificantly reduced compared to previous years, so this issue will necessarily beaustere without any impact on the scientific quality. We appreciate in advance theunderstandingof this forced sobriety andweare convinced that inorder to addressthesedifficultieswemustuseallourresourcestoensurethatscienceandprogresswillcontinuedeveloping.

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AsVladimirNabokovsays:“thereisnosciencewithoutfancy”,althoughHansMagnusEnzensbergerbelieves that "poetryof science isnotatground level,but comes fromthedeepest layers".Wehaveorganized this conferencewith thebelief that scientificresearchisagreatprivilegeforthehumanbeing.Wewouldliketothankallthesupportsreceivedfromthefollowingorganizationsandcompanies: University of Valladolid, Campus de Excelencia Internacional E3‐“LosHorizontesdelHombre”,GovernmentofCastillayLeón,CityofValladolid,Diputaciónde Valladolid, IEEE Spanish Section, Electron Device Society, Banco Santander,InstrumentosdeMedidaS.L.,AgilentTechnologies,SicenTec,andAmericanElements®.WeextendourthankstotheCDEAdvisoryandTechnicalCommittees,aswellastotheorganizersoftheCDEfrompreviouseditions.OurveryspecialthanktotheCDEAdvisoryCommitteeChair,Prof.JoséMillán.

TheConferenceLocalCommittee

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Contribu)onsformForeignCountries

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Contribu)onsfromSpanishResearchCentersandUniversi)es

CDE2013 1

CDE2013PROGRAM

Tuesday,Feb.12,201314.00h‐20.00h REGISTRATION14.00h–18.00h Mini Colloquium EDS. Prof. Benjamín Íñiguez, Univ. Rovira I

Virgili,Chair18.30h–20.00h WELCOMERECEPTION20.00h‐ RUTADETAPASWednesday,Feb.13,20138.00h–8.30h REGISTRATION8.30h–8.45h OPENING:Prof.JoséMillán,CDEAdvisoryCommitteeChair8.45h–9.30h PLENARYTALK:Prof.EmilioLora‐Tamayo,CSICChair9.30h‐11.35h SESSION1:Processtechnologyfordevicesandsimulation11.35h–12.00h COFFEEBREAK12.00h–14.05h SESSION2:Devicemodeling14.05h–15.30h LUNCH15.30h–17.35h SESSION3:Sensors,actuatorsandmicro/nanosystems17.35h–18.00h COFFEEBREAK 18.00h–19.30h POSTER:SESSIONS1‐519.30h‐20.30h CLASSICALMUSICPERFORMANCE21.30h‐ GALADINNER

Thursday,Feb.14,20138.00h–10.05h SESSION4:Emergingdevices 10.05h‐10.30h COFFEEBREAK10.30h–12.35h SESSION5:Characterizationandreliability12.35h‐ WORKSHOP:SOLARENERGY

12.35h–14.00h POSTER:SESSION614.00h–15.30h LUNCH

15.30h–16.15h PLENARYTALK:Prof.PilarEspinet,IES‐UPM 16.15h–18.15h SESSION6:SolarEnergy:thermalandphotovoltaicdevices 18.15h–18.30h COFFEEBREAK 18.30h–19.45h ROUNDTABLE.Prof.JuanJiménez,Univ.Valladolid.Chair 19.45h–20.00h CLOSINGREMARKS 22.30‐ “MissCellany”,JazzRock.Herminio`sBar

OUTOFPROGRAM:Friday,Feb.15,2013(fortheparticipantsstayinginValladolid)Sightseeingonfootandmuseums.

CDECommitteeMeeting

EDSChapteroftheYearAwardAward

EDS:BestStudentAward

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Tuesday,Feb.12,2013

Wednesday,Feb.13,2013

9.30h–9.55hO.1.1. Invited:ThinDielectricFilmsGrownbyAtomicLayerDeposition:PropertiesandApplications.FrancescaCampabadal,J.M.Rafí,M.B.González,M.Zabala,O.Beldarrain,M.C.AceroandM.DuchInstitutdeMicroelectrònicadeBarcelona,IMB‐CNM(CSIC).9.55h–10.15hO.1.2. Plasma oxidation of metallic Gd deposited on silicon by high pressuresputteringashighpermittivitydielectric R38M.A.Pampillón1,P.C.Feijoo1,E.SanAndrés1,J.L.G.Fierro21 Departamento de Física Aplicada III (Electricidad y Electrónica). Facultad deCienciasFísicas.UniversidadComplutensedeMadrid.28040,Madrid,Spain.2InstitutodeCatálisisyPetroleoquímica.CSIC.Cantoblanco.28049,Madrid,Spain.

14.00h‐20.00h PalaciodeCongresosCondeAnsúrez,thirdfloorREGISTRATION

14.00h–18.00h Auditorium,PalaciodeCongresosCondeAnsúrez,thirdfloorEDSMINICOLLOQUIUM.Prof.BenjamínÍñiguez,Univ.RoviraIVirgili.Chair

18.30h–20.00h PalaciodeSantaCruzWELCOMERECEPTION:Prof. Marcos Sacristán, Chancellor of

UniversityofValladolid

20.00h‐ RUTADETAPAS:Tapasbarsinthecitycenter

8.00h–8.30h PalaciodeCongresosCondeAnsúrez,thirdfloorREGISTRATION

8.30h–8.45h Auditorium,PalaciodeCongresosCondeAnsúrez,thirdfloorOPENING:Prof.JoséMillán,CDEAdvisoryCommitteeChair

9.30h‐11.35h Auditorium,PalaciodeCongresosCondeAnsúrez,thirdfloorSESSION 1: Process technology for devices andsimulationChairperson:Prof.JavierMartínezRodrigo

8.45h–9.30h PLENARYTALK:Prof.EmilioLora‐Tamayo,CSICChair

CDE2013 3

10.15h–10.35hO.1.3.UseofPMMAtoobtainGraphenelayers R93A. Bosca1, D. Lopez‐Romero1, S. Alvarez‐Garcia2, A. de Andres2, J. Pedros1, J.Martinez1andF.Calle11InstitutodeSistemasOptoelectrónicosyMicrotecnología,UniversidadPolitécnicadeMadrid,28040Madrid,Spain.2InstitutodeCienciadeMaterialesdeMadrid,ConsejoSuperiordeInvestigacionesCientíficas,28049Madrid,Spain.10.35h–10.55hO.1.4.NanodevicesimulationsonCloudStack R98F.Gomez‐Folgar,E.Comesaña,R.Valin,A.Garcia‐Loureiro,T.F.Pena.Centrode Investigación enTecnoloxías da Información (CITIUS).UniversidaddeSantiagodeCompostela.10.55h–11.15hO.1.5.Direct‐writepatterningofmetalsand reducedgrapheneoxideelectrodesbyarcerosionfororganicdevicemanufacturing R110M. García‐Vélez, A. L. Alvarez, C. Coya, G. Alvarado, J. Jiménez‐Trillo1, X. Diéz‐Betriú2,A.deAndrés2Dpt.TecnologíaElectrónica,ESCET,UniversidadReyJuanCarlos,Móstoles,28933Madrid(Spain)1Dpt. Ingeniería de Circuitos y Sistemas, EUIT Telecomunicación, UPM, 28031Madrid(Spain)2Instituto de Ciencia deMateriales deMadrid, CSIC. Cantoblanco, 28049Madrid(Spain)11.15h–11.35hO.1.6.MicroscopicmodelingofinterdiffusioninSiGealloys R117PedroCastrillo,IvánSantos,RuthPinacho,EmilianoRubio,andMartínJaraizDpto. de Electrónica, Universidad de Valladolid, E.T.S.I. Telecomunicación, PaseoBelén15,47011Valladolid,Spain.11.35h–12.00h COFFEEBREAK

12.00h–12.25hO.2.1.Invited:ModelingofradiationeffectsinMOSFETsJesúsBanqueri,M.A.CarvajalandA.J.PalmaECsens(ElectronicandChemicalSENsingSolutions),DepartamentodeElectrónicayTecnologíadeComputadores.UniversidaddeGranada.

12.00h–14.05h Auditorium,PalaciodeCongresosCondeAnsúrez,thirdfloorSESSION2:DevicemodelingChairperson:Prof.JuanAntonioLópezVillanueva

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12.25h–12.45hO.2.2. A new strategy to improve frequency performance of emerging deviceswithoutlengthscaling R116A.Benali,F.L.Traversa,G.Albareda,M.Aghoutaneb1andX.OriolsUniversitatAutònomadeBarcelona,08193,Bellaterra,Spain1UniversidadAbdelmalekEssaâdi,93000,Tetuán,Morocco12.45h–13.05hO.2.3. Wide frequency band scalable modeling of 3D embedded decouplingcapacitorsHélèneJacquinot1,DavidDenis2 R221CEA,LETI,MINATECCampus,17ruedesMartyrs,38054Grenoble.France.2IPDIA,2ruedelaGirafe,14000Caen.France.13.05h–13.25hO.2.4.MonteCarloanalysisofthermaleffectsinSelf‐SwitchingDiodes R48J.‐F.Millithaler,I.Iñiguez‐de‐la‐Torre,T.González,J.MateosDepartamento de Física Aplicada, Universidad de Salamanca, 37008 Salamanca,Spain.13.25h–13.45hO.2.5.OTFTmodeling:developmentandimplementationinEDAtools R113A.Castro‐Carranza1,M.Cheralathan1,C.Valla2,M.Estrada3,A.Cerdeira3,F.Poullet2,G.Depeyrot2,B.Iñiguez1andJ.Pallarès11Departament d’Enginyeria Electrònica (DEEEA), Universitat Rovira I Virgili43007,Tarragona,Spain.2DOLPHINIntegrationGmbH,F‐38242Meylan,France.3SeccióndeElectrónicadelEstadoSólido (SEES),CINVESTAV‐IPN,07360MexicoD.F.,Mexico.14.05h–15.30h LUNCH

15.30h–15.55hO.3.1. Invited: Sensors and micro and nano technologies for the food sector.I.Gràcia, S.Vallejos, R.Cumeras, M.Salleras, E.Figueras, J.Santander, N.Sabaté,J.P.Esquivel,C.Calaza,L.Fonseca,C.Cané.InstitutdeMicroelectrònicadeBarcelona,IMB‐CNM(CSIC).

15.30h–17.35h Auditorium,PalaciodeCongresosCondeAnsúrez,thirdfloorSESSION3:Sensors,actuatorsandmicro/nanosystemsChairperson:Prof.CarmenHorrillo

CDE2013 5

15.55h–16.15hO.3.2.Benzenesensorbasedonin‐situgrownZnOnanostructures R47J.Gonzalez‐Chavarri,I.Castro‐Hurtado,G.G.Mandayo,andE.CastañoCeitandTecnun,P.ManuelLardizabal15,20018,SanSebastian,Spain

16.15h–16.35hO.3.3.CeramicCapacitivePressureSensorbasedonLTCCTechnologyR65Josep M. Fernández‐Sanjuán1,2, Núria Bonet2, Josep G. Rodríguez2, Francisco M.Ramos1,2,JavierJ.Sieiro3,JoséM.López‐Villegas3,AlbertCirera11MIND/IN2UBElectronicsDepartment,UniversitatdeBarcelona,MartíiFranquès,1,Barcelona08028,Spain.2FAE‐FranciscoAlberoS.A.U.,RafaelBarradas19,L’HospitaletdeLlobregat08908,Spain.3GRAF Electronics Department, Universitat de Barcelona, Martí i Franquès, 1,Barcelona08028,Spain.

16.35h–16.55hO.3.4.MicrofluidicsappliedtoLove‐wavedevicestodetectbiologicalwarfareagentsindynamicmode. R67D.Matatagui1, J. Fontecha1,M.J. Fernández1, I. Gràcia2, C. Cané2, J.P. Santos1,M.C.Horrillo11GRIDSEN,CSIC,Serrano144,28006Madrid,Spain2InstitutodeMicroelectrónicadeBarcelona,CSIC,CampusUAB,08193Bellaterra,Spain16.55h–17.15hO.3.5.ElectroosmoticimpulsiondeviceforintegrationinPCB‐MEMSR96AntonioLuque,JoséM.Soto,FranciscoPerdigones,CarmenAracil,JoséM.Quero.Dpto. IngenieríaElectrónica,EscuelaTécnicaSuperiorde Ingeniería,UniversidaddeSevilla.Av.Descubrimientoss/nE41092Sevilla.17.15h–17.35hO.3.6. Low power consumption single metal oxide nanowire based gas sensorintegratedonMEMSMicrohotplates R104J. Samà1, R. Jiménez‐Díaz1, J.D. Prades1, O. Casals1, F. Hernandez‐Ramirez2 3, J.Santander4,C.Calaza4,L.Fonseca4,C.Cané4,S.Barth5,A.Romano‐Rodríguez11MIND‐IN2UB‐Dept.Electronics,UniversitatdeBarcelona(UB),Martí iFranquès1,08028,Barcelona,Spain.2 Institut de Recerca en Energia de Catalunya, Jardins de les Dones de Negre 1,08930SantAdriàdeBesòs,Spain3 Dept. Electronics, Universitat de Barcelona (UB), Martí i Franquès 1, 08028,Barcelona,Spain4 Institut de Microelectrònica de Barcelona, IMB‐CNM‐CSIC, 08193 Bellaterra,Spain

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5InstituteofMaterialsChemistry,TUWien,Getreidemarkt9/165,A‐1060Vienna,Austria.17.35h–18.00h COFFEEBREAK

POSTER‐SESSION1:ProcesstechnologyfordevicesandsimulationP.1.1.Gadoliniumscandatebyhighpressuresputteringasahigh‐kdielectricR5P.C.Feijoo,M.A.Pampillón,E.SanAndrésDpto. FísicaAplicada III: Electricidad y Electrónica. Universidad Complutense deMadrdid.Av/ComplutenseS/N.28040Madrid(Spain).P.1.2.EffectsofOzonePre‐depositionTreatmentonGaSbMOSCapacitorsR13ZhenTan,LianfengZhao,NingCui,JingWang,andJunXuTsinghuaNationalLaboratoryforInformationScienceandTechnology,InstituteofMicroelectronics,TsinghuaUniversity,Beijing100084,P.R.China.P.1.3. Towards high‐k integration with III‐V channels: interface optimization ofhighpressuresputteredGd2O3onInP R45E.SanAndrés,M.A.Pampillón,C.Cañadilla,P.C.Feijoo,A.delPrado.Departamento de Física Aplicada III (Electricidad y electrónica). Facultad deCienciasFísicas,UniversidadComplutensedeMadrid.Madrid,E‐28040.P.1.4.EtchingofAlGaN/GaNHEMTstructuresbyCl2‐basedICP R55Z.Gao,M.F.Romero,F.CalleDpto. Ingeniería Electrónica and Instituto de Sistemas Optoelectrónicos yMicrotecnología. ETSI Telecomunicación, Universidad Politécnica de Madrid,28040Madrid,Spain.P.1.5.AbinitiostudyoftheelectronicpropertiesofdefectstatesinSilicon R94IvánSantos,MaríaAboy,PedroCastrillo,PedroLópez,LourdesPelaz,andLuisA.Marqués.Dpto. de Electrónica, Universidad de Valladolid, E.T.S.I. Telecomunicación, PaseoBelén15,47011Valladolid,Spain.P.1.6. TwodimensionalelectrongasrelatedluminescenceinInAl(Ga)N/AlN/GaN‐basedheterostructures R106M. F. Romero1, M. Feneberg2, A. Minj3, A. Cavallini3, P. Gamarra4, M.‐A. di FortePoisson4,A.Vilalta‐Clemente5,P.Ruterana5,F.Calle1,andR.Goldhahn2,61ISOM, ETSI Telecomunicación, Universidad Politécnica de Madrid, Av.Complutense30,28040Madrid,Spain

18.00h–19.30h PalaciodeCongresosCondeAnsúrez,secondfloorPOSTER:SESSIONS1‐5

CDE2013 7

2Institut für Experimentelle Physik, Otto‐von‐Guericke‐Universität Magdeburg,39106Magdeburg,Germany3Department of Physics, University of Bologna, viale C Berti Pichat 6/II, I‐40127Bologna,Italy4III‐VLab.,RoutedeNozay,91461Marcoussis,France5CIMAP, UMR 6252 CNRS‐ENSICAEN‐CEA‐UCBN, 6, Boulevard du Maréchal Juin,14050CaenCedex,France6Institut für Physik, Technische Universität Ilmenau, PF100565, 98684 Ilmenau,Germany.P.1.7. Fabrication of High‐Ordered PBDTTT‐CF Polymer Nanopillar Arrays forOptoelectronicApplications R109V.S.Balderrama,J.Ferré‐Borrull,J.Pallarés,andL.F.MarsalDepartamentd’EnginyeriaElectrònica,ElèctricaiAutomàtica,UniversitatRoviraiVirgili,Avda.PaïsosCatalans26,43007Tarragona,Spain.P.1.8.IdentificationofstabledefectstructuresinducedbyirradiationinSiR112PedroLópez,LourdesPelaz,LuisA.Marqués,IvánSantosandMaríaAboyDepartamento de Electricidad y Electrónica, Universidad de Valladolid, ETSITelecomunicación,PaseodeBelén15,47011Valladolid,Spain.P.1.9. Photonic crystal optimization using a process variation aware geneticalgorithm. R120RodrigoPicos1,BernatMut1,EugeniGarcia‐Moreno1,LluisF.Marsal21UniversitatdelesIllesBalears,GEE,IllesBalears,Spain.2UniversitatRoviraiVirgili,DEEA,Tarragona,Spain.POSTER‐SESSION2:DevicemodelingP.2.1.SubthresholdresponseofaMOSFETtoradiationeffects R3A.J. Palma1, M.A. Carvajal1, S. Martínez‐García1, M. Vilches2, A.M. Lallena3 and J.Banqueri11ElectronicsDepartment,ETSIIT.3Atomic,NuclearandMolecularPhysicsDepartment,ScienceFaculty,UniversityofGranada.2UniversitaryHospital“SanCecilio”Granada(Spain).P.2.2.EffectsofCoverageFactor,InhomogeneousBroadeningandCavityLengthonStaticandDynamicBehaviorofSelf‐AssembledQuantum‐DotLasers R16MahdiRazm‐Pa1,andFarzinEmami21Electronic Department, Islamic Azad University, Boushehr Branch Islamic AzadUniversityofBoushehr,Boushehr,Iran.

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2Optoelectronic Research Centre of Electronic Department, Shiraz University ofTechnology,AirportBlvd.,Shiraz,Iran. P.2.3. Space quantization effects in Double Gate SB‐MOSFETs: role of the activelayerthickness R20JoséS.García,MaríaJ.Martín,RaúlRengelDepartamentodeFísicaAplicada.UniversidaddeSalamanca.PlazadeLaMerceds/n.37008.Salamanca.Spain.P.2.4.SchottkyBarrierMOSFETsworkinginthelinearregime:AMonteCarlostudyofmicroscopictransport. R21CarlosCouso,RaúlRengelandMaríaJ.MartínDepartamentodeFísicaAplicada,UniversidaddeSalamanca,Spain.P.2.5. A simple compact model for the junctionless Variable Barrier Transistor(VBT). R27OanaMoldovan,FrancoisLime,BogdanNae,BenjaminÍñiguez.UniversitatRoviraiVirgili(URV),ETSEDEEEA.Tarragona,Spain.P.2.6. InfluenceoftheContactEffectsontheVariationoftheTrappedChargeintheIntrinsicChannelofOTFTs R33KMAwawdeh1,JAJiménezTejada1,PLópezVaro1,JALópezVillanueva1,MJDeen21DepartamentodeElectrónicayTecnologíadeComputadores.CITIC‐UGR.FacultaddeCiencias.UniversidaddeGranada.18071Granada,SPAIN.2Department of Electrical and Computer Engineering McMaster University,Hamilton,ONL8S4K1CANADA.

P.2.7. An Improved I‐V Model of 4H‐SiC MESFETs Incorporating SubstrateTrapping,SurfaceTrappingandThermalEffects R39M.HemaLataRao,StudentMemberIEEEandNetiV.L.NarasimhaMurtySchoolofElectricalSciences,IITBhubaneswar,India.P.2.8. Time‐domainMonteCarlosimulationsofresonant‐circuitoperationofGaNGunndiodes R43S.García,B.G.Vasallo,J.MateosandT.GonzálezDepartamento de FísicaAplicada,Universidad de Salamanca, Plaza de laMerceds/n,37008Salamanca,Spain.P.2.9.StudyofRFIDswithSOItechnologyforUWB R49Raúl Rodríguez1, B. González1,2, J. García1,2, M. Marrero‐Martín1,2, and A.Hernández1,21InstituteforAppliedMicroelectronics(IUMA).UniversidaddeLasPalmasdeGranCanaria(ULPGC)

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2DepartamentodeIngenieríaElectrónicayAutomática.UniversidaddeLasPalmasdeGranCanaria(ULPGC)P.2.10. PerformanceofTwoPossible Implementationsof ILUTPreconditioners inthe3DNanodeviceSimulation R54A.Garcia–Rivera1,R.Valin1,N.Seoane1,M.Aldegunde2,andA.J.Garcia–Loureiro11Centro Singular de Investigación en Tecnoloxías da Información (CITIUS), RúaJenaro de la Fuente Domínguez s/n, Universidade de Santiago de Compostela(USC)–CampusVida,15782–SantiagodeCompostela,España.2CollegeofEngineering,SwanseaUniversity–Swansea,UnitedKingdomP.2.11. StaticandDynamicCharacteristicsofSelf‐Assembled InAs‐GaAsQuantumDot Laser Considering Carrier Recombination and Escape Time; A Circuit‐LevelModeling R15MahdiRazm‐Pa1,andFarzinEmami2 1ElectronicDepartment,IslamicAzadUniversity,BoushehrBranch,Iran.2OptoelectronicResearchCentreofElectronicDepartment,ShirazUniversityofTechnology.AirportBlvd.,Shiraz,Iran. P.2.12.MacroporousSiliconFETTransistorsforPowerApplications R69DidacVega,RaúlNajar,MaríaPina,ÁngelRodríguezDepartamentdeEnginyeriaElectronica.UniversitatPolitècnicadeCatalunya(UPC)SpainP.2.13. Studyofstatisticalvariabilityin22nmSOIFinFETintroducedbyLER,RDFandMGG R102G.Indalecio1,A.García‐Loureiro1,M.Aldegunde2,K.Kalna21Dpt. De Electrónica y Computación, Universidad de Santiago de Compostela,Spain.2CollegeofEngineering,SwanseaUniversity,SwanseaSA28PP,UnitedKingdomP.2.14.AnalysisofCrossoverPointandThresholdVoltageforTripleGateMOSFET.DheerajSharmaandSantoshVishvakarma R62NanoscaleDevices,VLSI/CircuitandSystemDesignLab,ElectricalEngineering,IndianInstituteofTechnology,Indore,India.POSTER‐SESSION3:Sensors,actuatorsandmicro/nanosystemsP.3.1. SENSOSOL: MultiFOV 4‐Quadrant high precision sun sensor for satelliteattitudecontrol R11Francisco J. Delgado1, José M. Quero1, Juan García1, Cristina L. Tarrida1, José M.Moreno1,AgustínG.Sáez1,PabloOrtega2

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1Escuela Superior de Ingenieros, Universidad de Sevilla (US, Spain),fjdelgado@gte.esi.us.es.2Universidad Politécnica de Cataluña, Grupo de Micro y Nanotecnologías (UPC,Spain)

P.3.2.CarbonNanotube‐basedSAWsensors R25ISayago1,MJFernández1,JLFontecha1,MCHorrillo1,ETerrado2,ASeral‐Ascaso3andEMuñoz31InstitutodeSeguridaddelaInformación (GRIDSEN)‐CSIC,Serrano144,28006Madrid,Spain2FacultaddeCienciasdelaSalud,UniversidaddeSanJorge,50830VillanuevadeGállego(Zaragoza),Spain3 Instituto de Carboquímica ICB‐CSIC,Miguel Luesma Castán 4, 50018 Zaragoza,SpainP.3.3.MicrofluidicimpulsionsystemmanufacturedbyPCB‐MEMSforLabonachipCarmenAracil,FranciscoPerdigones,AntonioLuque,JoséManuelQueroR28UniversityofSeville.Spain.P.3.4. Quasi‐digital conversion for resistive devices: application in GMR‐based ICcurrentsensors R29C. Reig1,*, A. DeMarcellis2, M.‐D. Cubells‐Beltrán1, J. Madrenas3, S. Cardoso4, P.P.Freitas4,1Dept.ofElectronicEngineering,UniversityofValencia,Burjassot,Spain2Dept. of Industrial and Information Engineering and Economics, University ofL’Aquila,L’Aquila,Italy3Dept.ofElectronicEngineering,CatalanPolytechnicUniversity,Barcelona,Spain4Inst.ofEng.,Sist.andComp.‐MicrosistemaseNanotecnologias,Lisbon,PortugalP.3.5.MacroporousSiliconMicroreactorforthePreferentialOxidationofCOR68N. J. Divins1, 2, C. Moreno2, E. López1, 3, D. Vega4, Á. Rodríguez4, F. Gonzàlez deRivera5,I.Angurell5,M.Seco5,O.Rossell5,J.Llorca1,21Institute of Energy Technologies and Centre for Research in NanoEngineering,TechnicalUniversityofCatalonia(UPC),Barcelona,Spain2CentreforResearchinNanoEngineering,UPC,Barcelona,Spain3 Institute of Energy Technologies, UPC, Barcelona, Spain, and Planta Piloto deIngenieríaQuímica(CONICET‐UNS),BahíaBlanca,Argentina4Dept.ElectronicEngineering,UPC,Barcelona,Spain.5Dept.InorganicChemistry,UniversityofBarcelona,Barcelona,SpainP.3.6.MacroporousSiliconPhotonicCrystalsforGasSensing R70DidacVega,JordiReina,ÁngelRodríguezDepartamentdeEnginyeriaElectronica.UniversitatPolitècnicadeCatalunya(UPC)Spain.

CDE2013 11

P.3.7.PressurizedMicrovalvewithSMD‐BasedActivationtoDriveFluidinLow‐CostandAutonomousMEMS R79GuadalupeFlores,FranciscoPerdigonesandJoséM.QueroUniversityofSeville,Spain.P.3.8.Localizedgrownself‐contactednanowiresforgasnanosensordeviceJ.Samà1,S.Barth2,R.Jiménez‐Díaz1,J.D.Prades1,O.Casals1,I.Gracia3,J.Santander3,C.Calaza3,C.Cané3,A.Romano‐Rodríguez1 R1051MIND‐IN2UB‐Dept.Electronics,UniversitatdeBarcelona(UB),MartíiFranquès1,08028,Barcelona,Spain.2InstituteofMaterialsChemistry,TUWien,Getreidemarkt9/165,A‐1060Vienna,Austria.3Institut de Microelectrònica de Barcelona, IMB‐CNM‐CSIC, 08193 Bellaterra,Spain.P.3.9. NO sensors for disease control and medication monitoring in asthmaticpatients R108J.L.Pau,A.GarcíaMarín,C.GarcíaNuñez,E.Ruiz,J.PiquerasLaboratorio de Microelectrónica, Dpto. Física Aplicada, Facultad de Ciencias,UniversidadAutónomadeMadrid,c/Fco.TomásyValiente7,Madrid28049,Spain.P.3.10. Effective electrical resistance due to current‐induced heat flow inthermoelectricgenerators R118PedroCastrilloandJoséMiguelSalgadoDepartamentodeElectrónica,UniversidaddeValladolid,E.T.S.I.T.,PaseodeBelén15,47011Valladolid,Spain.P.3.11.NewimprovementsintheinfraredatmosphericsensorfortheMarsMetNetMission R122F.Cortés,A.González,A.Llopis,A.J.deCastro,J.Meléndez,andF.LópezLIR‐ Infrared Lab. Departamento de Física. Universidad Carlos III de Madrid,Leganés,SpainPOSTER‐SESSION4:EmergingdevicesP.4.1.AMonteCarloStudyofElectronTransportinSuspendedMonolayerGrapheneRaúlRengel,CarlosCousoandMaríaJ.Martín R6DepartamentodeFísicaAplicada,UniversidaddeSalamanca,SpainP.4.2.Thicknessdependenceoforganicphotodetectorbandwith R7B.Arredondo1,B.Romero1,C.deDios2,R.Vergaz2,A.R.Criado2,J.MSánchez‐Pena2

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1ElectronicTechnologyDepartment,UniversityRey JuanCarlos,Móstoles28933,Madrid.2Electronic Technology Department, University Carlos III de Madrid, Leganés28911,Madrid.P.4.3. EffectofelectricfieldandtemperaturevariabilityonspindephasinginSiGenanowires R19BhupeshBishnoi,AssociateMember,IEEE,AahwaniVerma,SheikhSabiqChishti,AkshayKumarSalimathandBahnimanGhoshDepartment of Electrical Engineering, Indian Institute of Technology Kanpur,Kanpur,India208016P.4.4.ScalingLimitsofRectangularandTrapezoidalChannelFinFETs R74J.Mohseni,J.D.MeindlGeorgiaInstituteofTechnology,Atlanta,GA,USA.P.4.5. Ballistic Deflection Transistor: Geometry Dependence and BooleanOperations R44IgnacioÍñiguez‐de‐la‐Torre1,VikasKaushal2,MartinMargala2,JavierMateos1andTomásGonzález11DepartamentodeFísicaAplicada,UniversidaddeSalamanca,PlazadelaMerceds/n,37008Salamanca,Spain.2DepartmentofElectricalandComputerEngineeringUniversityofMassachusettsLowell,301BallHallOneUniversityAve.Lowell,MA01854,USA.P.4.6. Monte Carlo Simulation of Temperature and Confinement Dependent SpinTransportinGermaniumNanowire R50Akshaykumar Salimath, , S Sabiq Chishti , Ashwani Verma, Bhopesh Bishnoi,BahnimanGhoshDepartmentofEE,IITKanpur,Kanpur,UP‐208016.India.P.4.7.VacanciesinRegimentedElongatedInAs/GaAsQuantumDotsArraysR53TrinidadGarcía,SalvadorRodríguez‐BolívarandFranciscoManuelGómezCamposDepartamentodeElectrónicayTecnologíadeComputadores,CampusFuentenuevas/n,UniversidaddeGranada,Spain.P.4.8.EffectofDopingProfileonTunnelingFieldEffectTransistorPerformanceVikasVijayvargiyaandSantoshKumarVishvakarma R63Nanoscale Devices, VLSI/ULSI Circuit and System Design Lab, ElectricalEngineeringDiscipline.IndianInstituteofTechnologyIndore,India.

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P.4.9.TerahertzTimeDomainSpectroscopyforchemicalidentification R73E.García‐García1,Y.M.Meziani2,J.Calvo‐Gallego3,J.E.Velázquez‐Pérez11CentrodeLáseresPulsados(CLPU),37185Villamayor,Salamanca,Spain2Dpto.deFísicaAplicada,UniversidaddeSalamanca,E‐37008Salamanca,Spain3EPS de Zamora, Avda. Cardenal Cisneros, 34, Universidad de Salamanca, 49022Zamora,SpainP.4.10.Simulationofnanoholeparticlefillingbyelectrospray R95ArnauColl,SandraBermejoandLuisCastañerUniversitatPolitècnicadeCatalunya.MNTgroup:JordiGirona1‐3,Barcelona.P.4.11.PeakEmissionWavelengthTuningforLightEmittingDiodesandLasersfor

NGadeltaInInGaN yy −− 1 QuantumWellbyvaryingtheCompositionoftheDeltawellSaumyaBiswas 1 ,Md.ShofiqulIslam 2 ,IfanaMahbub 3 ,SaugataBiswas 4 R99

3,2,1 Dept. of Electrical and Electronic Engineering, Bangladesh University ofEngineering&Technology(BUET).India.4 InstituteofInformationandCommunicationTechnology.India.P.4.12. Conductionband‐ValencebandCouplingEffectson theBandStructureof

GaNNGaIn /72.028.0 QuantumWell R100SaumyaBiswas,Md.ShofiqulIslam,IfanaMahbubDept. of Electrical and Electronic Engineering, Bangladesh University ofEngineering&Technology.India.P.4.13. Room Temperature THz Detection and Emission with SemiconductorNanodevices. R101J.Mateos1,J.F.Millithaler1,I.Íñiguez‐de‐la‐Torre1,A.Íñiguez‐de‐la‐Torre1,B.G.Vasallo1,S.Pérez1,P.Sangare2,G.Ducournau2,C.Gaquiere2,Y.Alimi3,L.Zhang3,A.Rezazadeh3,A.M.Song3,A.Westlund4,J.Grahn4,andT.González11UniversidaddeSalamanca,DepartamentodeFísicaAplicada,Salamanca,Spain.2Institutd’Electronique,MicroelectroniqueetdeNanotechnologies,VilleneuveD’Ascq,France.3University ofManchester,Manchester UK, 4Chalmers University of Technology,Gothemburg,Sweden.P.4.14.ModelingthethermalconductivityofsemiconductorNWs;Astepforwardtotheincreaseofthethermoelectricfigureofmerit. R115JuliánAnaya1,JuanJiménez1,TomásRodríguez21GdSOptronlab,Edificio I+D,UniversidaddeValladolid,PaseodeBelén1,47011Valladolid,Spain.2Dpto. Tecnología Electrónica, E.T.S.I. de Telecomunicación, UniversidadPolitécnicadeMadrid,28040Madrid,Spain.

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P.4.15. Enhancement of the radiation properties of a lineal array of planarantennaswithachiralmetamaterialcover R121O.Fernández,A.Gómez,J.Gutiérrez,A.Tazón,A.VegasUniversidaddeCantabriaDpto.deIngenieríadeComunicaciones‐EdificiodeI+D+iPlazadelaCiencias/n,39005Santander–Spain.POSTER‐SESSION5:CharacterizationandreliabilityP.5.1.AcceleratedlifetestsofleadfreesolderalloysinpresenceofdistilledwaterE.Nogueira1,A.Fernandez1,A.Florez1,E.Mino2,R.AlvarezSantos1 R11UniversidadPolitécnicaMadrid,Madrid,Spain.2Radio Access Networks Department, Telefonica Investigacion and Desarrollo,MadridSpain.

P.5.2.LaserInducedSingleEventsinSRAMs R4C.Palomar1,I.López‐Calle1,2,F.JFranco1,J.G.Izquierdo3,andJ.A.Agapito11Dep.FísicaAplicadaIII,FacultaddeFísicas,UniversidadComplutensedeMadrid(UCM),28040Madrid(Spain)2EuropeanSpaceAgency,Postbus299‐TheNetherlands3Servicio de Espectroscopía Multifotónica y de Femtosegundo, CAI deEspectroscopía,FacultaddeQuímicas,UniversidadComplutensedeMadrid(UCM),28040Madrid(Spain).P.5.3. ModelingofthePost‐BreakdownIG‐VG‐VDCharacteristicsofLa2O3‐basedMOSTransistors R10E.Miranda1,T.Kawanago2,K.Kakushima2,J.Suñé1,H.Iwai21Departamentd’EnginyeriaElectrònica,UniversitatAutònomadeBarcelona,Barcelona,Spain.2FrontierResearchCenter,TokyoInstituteofTechnology,Yokohama,Japan.P.5.4.CMOSVCODesignOptimizationUsingReliable3DElectromagneticInductorModels R41CarmenPérez,YolandaJato,AmparoHerreraDepartmentofCommunicationsEngineering,UniversidaddeCantabria,Santander,Spain.P.5.5. FirstRunS‐DMBMMICLNA R42CarmenPérez,YolandaJato,AmparoHerreraDepartmentofCommunicationsEngineering,UniversidaddeCantabria,Santander,Spain.

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P.5.6.EELS‐HAADFcombinationforcharacterizationofAlN/GaNdistributedbraggreflectors R64A. Eljarrat1, L. López‐Conesa1, Ž. Gačević2, S. Fernández‐Garrido2,3, E. Calleja2, C.Magén4,5,S.Estradé1,6andF.Peiró11Lab. of ElectronNanoScopies, LENS‐MIND‐IN2UB,Dept. Electrònica,Universitat.deBarcelona,Spain.2InstitutodeSistemasOptoelectrónicosyMicrotecnología,ISOM,Univ.PolitécnicadeMadrid,Spain.3AlsoatPaul‐Drude‐InstituteforSolidStateElectronics,Hausvogteiplatz5‐10117Berlin,Germany.4Laboratorio de Microscopías Avanzadas (LMA) ‐ Instituto de Nanociencia deAragón(INA)andDepartamentodeFísicadelaMateriaCondensada,UniversidaddeZaragoza,50018Zaragoza,Spain.5FundaciónARAID,50004Zaragoza,Spain.6TEM‐MAT,(CCiT),UniversitatdeBarcelona,SolísiSabarís1,Barcelona,SpainP.5.7.Nanoscalemorphologyofgrapheneondifferentsubstrates R66M. Lanza1,2, A. Bayerl2, M. Porti2, M. Nafria2, X. Aymerich2, Y.Wang1, T. Gao3, H.Liang4,G.Jing5,Z.Liu3,Y.Zhang3,H.Duan11State Key Laboratory for Turbulence and Complex System, Department ofMechanics and Aerospace Engineering ,CAPT, College of Engineering, PekingUniversity,Beijing100871,China.2Electronic Engineering Department, Universitat Autònoma de Barcelona, 08193Bellaterra,Spain.3Center for Nanochemistry (CNC), Beijing National Laboratory for MolecularSciences, State Key Laboratory for Structural Chemistry of Unstable and StableSpecies,CollegeofChemistryandMolecularEngineering,Academy forAdvancedInterdisciplinaryStudies,PekingUniversity,Beijing100871,China.4DepartmentofModernMechanics,UniversityofScienceandTechnologyofChina,Hefei,Anhui,230027,China.5PhysicsDepartment,NorthwestUniversity,Xi’an710069,ChinaP.5.8.IntermixinginInAsxP1‐x/InPQuantumWellsInducedbyDryEtchingProcesses R71V.Hortelano1,A.Torres1,M.Sanz1,J.Jiménez1,O.Martínez1,J.P.Landesman21 GdS‐Optronlab, Dpto. Física Materia Condensada, Parque Científico Univ. deValladolid,PaseodeBelén11,47011Valladolid,Spain.2 Institut des Matériaux Jean‐Rouxel Université de Nantes ‐ CNRS, 2, rue de laHoussinière,44322NantesCedex3,France.P.5.9.Sitespecific(EF)TEMforSi‐basedelectrophotonicdevices R78L. López‐Conesa1, J.M. Rebled1,2, J.M. Ramírez1, Y. Berencén1, S. Estradé1,3, B.Garrido1andF.Peiró11MIND – IN2UB, Departament d’Electrònica, Universitat de Barcelona, Martí i

16 CDE2013

Franquès1,08028Barcelona.2InstitutdeCiènciadeMaterialsdeBarcelona(ICMAB),CampusdelaUAB,08193Barcelona.3Centres Científics i Tecnològics de laUniversitat deBarcelona (CCiT‐UB), Solé iSabarís1,08028Barcelona.P.5.10. Defect Assessment and Leakage Control in Atomic Layer Deposited Al2O3andHfO2Dielectrics R80M.B.Gonzalez,J.M.Rafí,O.Beldarrain,M.ZabalaandF.CampabadalInstitut deMicroelectrònicadeBarcelona, IMB‐CNM (CSIC), CampusUAB, 08193Bellaterra,Spain.P.5.11. Nanoscaleanddevicelevelanalysisoftheresistiveswitchingphenomenoninultra‐thinhigh‐kgatedielectrics R85A.Crespo‐Yepes,M.Lanza,J.Martin‐Martinez,V.Iglesias,R.Rodriguez,M.Porti,M.Nafria,andX.AymerichDepartamentd’EnginyeriaElectrònica,UniversitatAutònomadeBarcelona(UAB)08193,Bellaterra,Spain.P.5.12. Electrical study of ScOx‐based MIS structures using Al and Ti as gateelectrodes R86H.García1,H.Castán1,S.Dueñas1,L.Bailón1,P.C.Feijoo2,M.A.Pampillon2,andE.SanAndrés21Departamento de Electricidad y Electrónica. E. T. S. Ingenieros deTelecomunicación. Universidad de Valladolid. Paseo de Belén s/n, 47011Valladolid,Spain.2 Departamento de Física Aplicada III (Electricidad y Electrónica). Facultad deCienciasFísicas.UniversidadComplutensedeMadrid.28040,Madrid,Spain.P.5.13. SiOx/SiO2 supperlattices for photovoltaic applications: structural andelectro‐opticalproperties R87J.López‐Vidrier1,S.Hernández1,O.Blázquez1,D.Hiller2,S.Gutsch2,M.Schnabel3,P.Löper3, L. López‐Conesa2, S. Estradé1,4, F. Peiró1, S. Janz3, M. Zacharias2 and B.Garrido11MIND‐IN2UB, Departament d’Electrònica, Universitat de Barcelona, Martí iFranquès1,E‐08028,Barcelona,Spain.2IMTEK, Faculty of Engineering, Albert‐Ludwigs‐University Freiburg, Georges‐Köhler‐Allee103,79110,Freiburg,Germany.3Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstr. 2, 79110,Freiburg,Germany.4TEM–MAT,CCiT–UB,ScientificandTechnologicalCenter‐UniversityofBarcelona,SoléiSabarís1,E–08028Barcelona,Spain.

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P.5.14.Performance measurement of amorphous silicon modules under ambientconditions R92P.Otero1,J.Rodríguez1,C.Alberte1,E.Comesaña2,A.J.GarcíaLoureiro2,M.Vetter11T‐Solar Global S.A., Dept. Technology, Development & Innovation, Parq.Tecnológico de Galicia, Rua de Vigo 5, E‐32900 San Cibrao das Viñas (Ourense),Spain.2Universidade de Santiago de Compostela, Departamento de Electrónica eComputación,15782SantiagodeCompostela,Spain.P.5.15.AnExperimentalStudyonElectricalParameterDispersiononOrganicTFTsRodrigoPicos1,EugeniGarcía‐Moreno1,MagaliEstrada2,AntonioCerdeira2R1191ElectronicEngineeringGroup,UniversitatdelesIllesBalears,Spain.2SEES,CINVESTAV‐IPN,MexicoDF,Mexico.

Thursday,Feb.14,2013

8.00h–8.25hO.4.1.Invited:Metamaterials,achanceforHighFrequencyElectronics?JoséRepresa,A.C.López,I.BarbaandA.Grande. DepartamentodeElectricidadyElectrónica.FacultaddeCiencias.UniversidaddeValladolid.8.25h–8.45hO.4.2.DCandACcharacterizationofPTFTinvertersusingPoly(9,9‐dioctylfluorene‐co‐bithiophene)(F8T2). R12M.F.Ávila1,L.Reséndiz2,M.Estrada1,A.Cerdeira11SeccióndeElectrónicadeEstadoSólido,Depto.IngenieríaEléctrica,CINVESTAV‐IPN,MéxicoD.F.07360,México.2SeccióndeEstudiosdePosgradoeInvestigación,UPIITA‐IPN,MéxicoD.F.07340,México.

19.30h‐20.30h Auditorium,PalaciodeCongresosCondeAnsúrez,thirdfloorCLASSICALMUSICPERFORMANCE

21.30h‐ “LaParrilladeSanLorenzo”restaurantGALADINNER

8.00h–10.05h PalaciodeCongresosCondeAnsúrez,thirdfloorSESSION4:EmergingdevicesChairperson:Prof.MaríaJ.Martín

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8.45h–9.05hO.4.3.SnO2‐basedTFTsfabricatedbyinkjetprinting R114AnnaVilà,LuísPortilla,JuanRamónMorante1MaterialsElectrònicsiEnergia–M‐2E,ElectronicsDepartment,MartíiFranqués1,2ªplanta,08028‐Barcelona,Spain.1InstitutperalaRecercaenEnergiadeCatalunya–IREC,JardinsdelesDonesdeNegre1,2ªplanta,08930‐SantAdriàdeBesòs,Spain.9.05h–9.25hO.4.4.TerahertzdetectionusingSi‐SiGeMODFETs R72Y.M.Meziani1,E.García‐García2,J.E.Velázquez‐Pérez1,D.Coquillat3,N.Dyakonova3,W.Knap3,I.Grigelionis4,K.Fobelets51Dpto.deFísicaAplicada,UniversidaddeSalamanca,E‐37008Salamanca,Spain2CentrodeLáseresPulsados(CLPU),Salamanca,Spain3Laboratoire Charles Coulomb, UMR 5221 CNRS‐Université Montpellier 2,Montpellier34095,France.4InstituteofExperimentalPhysics,UniversityofWarsaw,00‐681Warsaw,Poland5Department of Electrical and Electronic Engineering, Imperial College, LondonSW72AZ,UK.9.25h–9.45hO.4.5.2Datomicplanecrystalsbasedfield‐effecttransistors R35DavidJiménezDepartamentd'EnginyeriaElectrònica,Escolad'Enginyeria,UniversitatAutònomadeBarcelona9.45h–10.05hO.4.6.Metaloxidenanowiresasbuildingblocksforlightdetectors,gassensorsandbiosensors. R107J.L.Pau,C.GarcíaNuñez,A.GarcíaMarín,E.Ruiz,J.PiquerasLaboratorio de Microelectrónica, Dpto. Física Aplicada, Facultad de Ciencias,UniversidadAutónomadeMadrid,c/Fco.TomásyValiente7,Madrid28049,Spain.10.05h‐10.30h COFFEEBREAK

10.30h–10.55hO.5.1.Invited:FailureanalysisofMIS/MIMstructuresusingspatialstatisticsEnriqueMiranda.Departamentd'EnginyeriaElectrònica,UniversitatAutònomadeBarcelona.

10.30h–12.35h Auditorium,PalaciodeCongresosCondeAnsúrez,thirdfloorSESSION5:CharacterizationandreliabilityChairperson:Prof.FrancescaPeiró

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10.55h–11.15hO.5.2. Thin film YSZ solid state electrolyte characterization performed byelectrochemicalimpedancespectroscopy R8LanderRojo,GemmaGaMandayoandEnriqueCastañoMicroelectronics and Microsystems Unit, CEIT and TECNUN (University ofNavarra)PaseoManueldeLardizábal15,200018,SanSebastián,Spain.11.15h–11.35hO.5.3.ImprovingYieldonRF‐CMOSICs R40AmparoHerrera,YolandaJatoDepartmentofCommunicationsEngineering,UniversidaddeCantabria,Santander,Spain.11.35h–11.55hO.5.4.EELspectroscopictomography:anewdimensiontonanomaterialsanalysisLluísYedra1,2,AlbertoEljarrat1,RaúlArenal3,4,EvaPellicer5,MoisésCabo5,AlbertoLópez‐Ortega6,MartaEstrader6, Jordi Sort7,MariaDolorsBaró5, SòniaEstradé1,2,FrancescaPeiró1 R521Laboratory of Electron Nanoscopies (LENS)–MIND/IN2UB, Dept. d'Electrònica,UniversitatdeBarcelona,c/MartíFranquès1,E‐08028Barcelona,Spain.2CCiT,ScientificandTechnologicalCenters,UniversitatdeBarcelona,C/LluísSoléiSabaris1,E‐08028Barcelona,Spain.3Laboratorio de Microscopias Avanzadas (LMA), Instituto de Nanociencia deAragon(INA),UniversidaddeZaragoza,E‐50018Zaragoza,Spain.4FundacionARAID,E‐50004Zaragoza,Spain.5DepartamentdeFísica,FacultatdeCiències,UniversitatAutònomadeBarcelona,E‐08193Bellaterra,Spain.6CIN2(CIN‐CSIC) and Universitat Autònoma de Barcelona, Catalan Institute ofNanotechnology,CampusdelaUAB,E‐08193Bellaterra,Spain.7InstitucióCatalanadeRecercaiEstudisAvançats(ICREA),DepartamentdeFísica,Facultat de Ciències, Universitat Autònoma de Barcelona, E‐08193 Bellaterra,Spain.11.55h–12.15hO.5.5.ModelingofBTIrelatedtime‐dependentvariability R83J.Martin‐Martinez,N.Ayala,R.Rodriguez,M.NafriaandX.AymerichDepartamentd’EnginyeriaElectrònica,UniversitatAutònomadeBarcelona(UAB)08193,Bellaterra,Spain.

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12.15h–12.35hO.5.6. Er‐doped Si‐based electroluminescent capacitors: Role of different hostmatricesontheelectricalandluminescentproperties R88Y.Berencén,1J.M.Ramírez,1B.Garrido11MIND‐IN2UB, Dept. Electrònica, Universitat de Barcelona, Martí i Fanquès 1,08028,Barcelona,Spain.

P.6.1.Deepleveldefectsonmono‐likeandpolycrystallinesiliconsolarcellsR2E.Pérez1,H.García1,H.Castán1,S.Duenas1,L.Bailón1,B.Moralejo2,O.Martínez2,J.Jiménez2andV.Parra31Dept. de Electricidad y Electrónica, Universidad de Valladolid, ETSITelecomunicación,PaseodeBelén15,47011Valladolid,Spain.2Dept.deFísicadelaMateriaCondensada,UniversidaddeValladolid,I+Dbuilding,PaseodeBelén11,47011Valladolid,Spain.3DC Wafers Investments, S.L. Ctra Madrid km 320. 24227 Valdelafuente, León. P.6.2.MethodforestimatingthecelltemperatureofaHCPVone‐cellmodulebasedontheopencircuitvoltage. R14EduardoF.Fernández1,A. J.GarcíaLoureiro2,F.Almonacid1,P.Rodrigo1,PedroJ.PérezHigueras1,G.Almonacid1.1CentreofAdvancedStudiesinEnergyandEnvironment,UniversityofJaén,Spain.2UniversityofSantiagodeCompostela,SantiagodeCompostela.P.6.3.Influenceofcathodeinorganicsolarcellsperformance R17G.delPozo,B.RomeroandB.Arredondo.ElectronicTechnologyDept.,UniversidadReyJuanCarlos,C/Tulipáns/n,28933,Móstoles,Madrid.P.6.4.Lowcostspray‐coatingborondiffusiononn‐typesilicon R18ElenaNavarreteAstorga,EfraínOchoaMartínez,JoséR.RamosBarradoLaboratorio de Materiales y Superficies (unidad asociada al CSIC), Facultad deCiencias,UniversidaddeMálaga,Spain.

12.35h–14.00h PalaciodeCongresosCondeAnsúrez,secondfloorPOSTER ‐ SESSION 6: Solar Energy: thermal and photovoltaicdevices

12.35h‐ WORKSHOP:SOLARENERGY

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P.6.5.BorondiffusedemitterspassivatedwithAl2O3films R24G.Masmitja,P.Ortega,G.López,E.Calle,M.Garcia,I.Martin,A.Orpella,C.Voz,R.Alcubilla.UniversitatPolitècnicadeCatalunyaUPC.C/JordiGirona1‐3,ModuloC‐4,08034Barcelona,Spain.P.6.6.AnIBCsolarcellfortheUPCCubeSat‐1mission R26P. Ortega, R. Jove‐Casulleras, A. Pedret, R. Gonzálvez, G. López, I. Martín, M.Domínguez,R.Alcubilla,A.Camps.UniversitatPolitècnicadeCatalunyaUPC.C/JordiGirona1‐3,ModuloC‐4,08034Barcelona,Spain.P.6.7. Hydrogenatedamorphous silicondepositedbyhighpressure sputtering forHITsolarcells R32R.García‐Hernansanz1, E.García‐Hemme1,2, J.Olea3,2, D.Pastor1,2,3, A.delPrado1,I.Mártil1,G.González‐Díaz1,F.J.Ferrer4.1Dpto.FísicaAplicadaIII,Univ.ComplutensedeMadrid,2CEICampusMoncloa,UCM‐UPM,Madrid,Spain3InstitutodeEnergíaSolar,E.T.S.I.Telecomunicación,Univ.PolitécnicadeMadrid4CentroNacionaldeAceleradores,UniversidaddeSevilla‐CSICP.6.8.HighefficientthinfilmCdTesolarcells R36ZhizhongBai1,RuilongYang1,DeliangWang21HefeiNationalLaboratoryforPhysicalSciencesattheMicroscale,and2CAS Key Laboratory of Energy Conversion Materials, University of Science andTechnologyofChina,Hefei,Anhui,People’sRepublicofChina.P.6.9. Progress inSiliconHeterojunctionSolarCell fabricationwith rear laser‐firedcontacts. R46A.Morales‐Vilches,C.Voz,M.Colina,G.López,I.Martín,A.Orpella,J.Puigdollers,M.GarcíaandR.Alcubilla.GrupderecercaenMicroiNanotecnologies,Departamentd’EnginyeriaElectrònica,UniversitatPolitècnicaCatalunya.P.6.10.Photocurrentmeasurementsforsolarcellscharacterization R60E.Pérez,M.Maestro,H.García,H.Castán,S.DueñasandL.BailónDept. de Electricidad y Electrónica, Universidad de Valladolid, E.T.S.I.Telecomunicación,PaseodeBelén15,47011Valladolid,Spain.P.6.11. Low‐Costsystemforcharacterizingfull‐waferphotoluminescenceinsiliconphotovoltaic R61

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B.Moralejo1,A.Tejero1,O.Martínez1,J.Jiménez1,V.Parra21GdS – Optronlab, Dpto. Física de la Materia Condensada, Edificio I+D, Univ. deValladolid,PaseodeBelén11,47011,Valladolid(Spain).2DCWafers,Ctra.deMadrid,Km320,24227,Valdelafuente,León,(Spain).

P.6.12. InfluenceofHydrogenontheOpticalabsorptionofGaAs(Ti)filmsdepositedbyR.F.sputtering. R76A.Boronat,S.Silvestre,LCastañer.MNT‐ElectronicEngineeringDepartment,UniversitatPolitècnicadeCatalunyaC/JordiGirona1‐3,CampusNordUPC,08034Barcelona,Spain.P.6.13.SiliconSolarCellsforIII‐VonSiliconPVIntegration R77ElisaGarcía‐Tabarés,IvánGarcía,DiegoMartín,IgnacioRey‐Stolle1Instituto de Energía Solar – Universidad Politécnica de Madrid. Avda.Complutense30–28040Madrid(Spain).2CES Felipe II – Universidad Complutense de Madrid – CL Capitán 39, 28300Aranjuez,Madrid(Spain).P.6.14.TrappingactivityonmulticrystallineSiwafersstudiedbycombiningfastPLimagingandhighresolvedelectricaltechniques R81O.Martínez1,J.Mass2,B.Moralejo1,V.Hortelano1,A.Tejero1,J.Jiménez1,V.Parra31GdS‐Optronlab, Dpto. Física Materia Condensada, Parque Científico Univ. deValladolid,47011Valladolid(Spain).2DepartamentodeFísica:GrupodeFísicaAplicada,UniversidaddelNorte,Km.5‐VíaPuertoColombia,Barranquilla,Colombia.3DC‐WafersInvestments,S.L.Ctra.deMadrid,Km.320,24227Valdelafuente,León,Spain.P.6.15.ModificationofthepropertiesofCdSandCdTefilmsgrownbyclosespacevapoursublimationforsolarcellapplications R82J.L.Plaza1,S.Rubio1,O.Martínez2,V.Hortelano2,E.Diéguez11LaboratoriodeCrecimientodeCristales,DepartamentodeFísicadeMateriales,FacultaddeCiencias,UniversidadAutónomadeMadrid.2GdS‐Optronlab, Dpto. Física Materia Condensada, Parque Científico Univ. deValladolid,47011Valladolid(Spain).P.6.16. Finite‐Element Modeling of Interdigitated Heterojunction OrganicPhotovoltaicDevices R84P.Granero,V.S.Balderrama,J.Ferré‐Borrull,J.Pallarès,andL.F.MarsalNano‐electronic and Photonic Systems (NePhoS), Department of Electronic,Electrical and Automatic Control Engineering, Universitat Rovira i Virgili, Av.PaïsosCatalans2643007,Tarragona,Spain.

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P.6.17.InfluenceofexcitonblockinglayerinsmallmoleculeorganicsolarcellsS.Galindo1,M.Ahmadpour1,A.Marsal1,VikasL.S.2,C.Voz1,J.Puigdollers1R891Grup de recerca en Micro i Nanotecnologies, Departament d’EnginyeriaElectrònica,UniversitatPolitècnicaCatalunya.c/JordiGirona1‐3,CampusNord–C4,08034Barcelona.2Nanophotonic&OptoelectronicDevicesLaboratory,DepartmentofPhysics,CochinUniversityofScienceandTechnology,Kochi‐22,IndiaP.6.18. InfluenceoftheBlendConcentrationonthePerformancesofPTB1:PCBMBHJSolarCells. R90P.L.Han,V.S.Balderrama,M.Alba,P.Formentin,J.PallarésandL.F.MarsalDepartamentd’EnginyeriaElectrònica,ElèctricaiAutomàtica,UniversitatRoviraiVirgili,Av.PaisosCatalans26,43007Tarragona,Spain.P.6.19.Abinitiostudyofthedefectstatesata‐Si:H/c‐Siinterfaces R91IvánSantos1,MarcoCazzaniga2,BénédicteDemaurex3,StefaanDeWolf3,GiovanniOnida2,andLucianoColombo41DepartamentodeElectricidadyElectrónica,UniversidaddeValladolid,Spain.2EuropeanTheoreticalSpectroscopyFacilityandDipartimentodiFisica,UniversitàdegliStudidiMilano,Italy.3InstituteofMicroengineering,PhotovoltaicsandThinFilmElectronicLaboratory,ÈcolePolytechniqueFédéraledeLausanne,Swizerland.4DipartimentodiFisica,UniversitàdegliStudidiCagliari,Italy.P.6.20. Development of a very fast spectral response measurement system formeasurementofsiliconthinfilmmodules R97J.A.Rodriguez,M.Vetter,M.Fortes,C.Alberte,P.OteroDept.Technology,Development&Innovation.T‐SolarGlobalS.A.Parque Tecnolóxico de Galicia, Avda. de Vigo 5, E‐32900 San Cibrao das Viñas(Ourense),Spain.

P.6.21.Simulationofa–Si:H/a–Si:HTandemSolarCells R103A. Garcia–Rivera1, E. Comesaña1, J.A. Rodríguez2, A. J. Garcia–Loureiro1, and M.Vetter21Centro Singular de Investigación en Tecnoloxías da Información (CITIUS), RúaJenaro de la Fuente Domínguez s/n, Universidade de Santiago de Compostela(USC)–CampusVida,15782–SantiagodeCompostela,España.2Dept. de Tecnología, Innovación &Desarrollo de T–Solar Global S.A., San CibraodasViñas(Ourense),España.

P.6.22. Electricalpropertiesof silicon supersaturatedwith titaniumorvanadiumforintermediatebandmaterial. R34

24 CDE2013

E.García‐Hemme1,2,R.García‐Hernansanz1,2,J.Olea2,3,D.Pastor1,2,3,I.Mártil1,2,G.González‐Díaz1,2,P.Wahnón2,3,41Dpto.deFísicaAplicadaIII(ElectricidadyElectrónica),FacultaddeCienciasFísicas,UniversidadComplutensedeMadrid,28040Madrid,Spain.2CEICampusMoncloa,UCM‐UPM,28040Madrid,Spain.3InstitutodeEnergíaSolar,E.T.S.I.deTelecomunicación,Univ.PolitécnicadeMadrid.28040Madrid,Spain.4Departamento de Tecnologías Especiales, ETSI Telecomunicación and Instituto deEnergíaSolar,UPM,CiudadUniversitaria,Madrid28040,Spain.14.00h–15.30h LUNCH

16.15h–16.35hO.6.1.Invited:WideBandGapPowerSemiconductorDevicesJoséMillánandPhilippeGodignonIMB‐CNM‐CSIC, Campus Universitad Autónoma de Barcelona, 08193 Bellaterra,Barcelona.16.35h–16.55hO.6.2. Invited: Sliding mode control‐based maximum power point tracking forinterconnectedconvertersinphotovoltaicsystemsLuisMartínez‐SalameroUniversidadRoviraiVirgili,Tarragona.16.55h–17.15hO.6.3. Invited:The intermediatebandapproach in the third solarcellgenerationcontextGermán González‐Díaz1,2, I. Mártil1,2, A. del Prado1,2, D. Pastor1,2,3, J. Olea2,3, E.García‐Hemme1,2,R.García‐Hernansanz1,2,P.Wahnón2,3,41Dpto. de Física Aplicada III (Electricidad y Electrónica), Facultad de CienciasFísicas,UniversidadComplutensedeMadrid,28040Madrid,Spain.2CEICampusMoncloa,UCM‐UPM,28040Madrid,Spain.3Instituto de Energía Solar, E.T.S.I. de Telecomunicación, Univ. Politécnica deMadrid.28040Madrid,Spain.4DepartamentodeTecnologíasEspeciales,ETSITelecomunicaciónandInstitutodeEnergíaSolar,UPM,CiudadUniversitaria,Madrid28040,Spain.

16.15h–18.15h Auditorium,PalaciodeCongresosCondeAnsúrez,thirdfloorSESSION 6. Solar Energy: thermal and photovoltaicdevicesChairperson:Prof.RamónAlcubilla

15.30h–16.15h PLENARYTALK:Prof.PilarEspinet,IES‐UPM

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17.15h–17.35hO.6.4.Invited:Theroleofdefectsinsolarcells:ControlanddetectionSalvadorDueñas,E.Pérez,H.Castán,H.García,andL.Bailón.Departamento de Electricidad y Electrónica. E.T.S. de Ingenieros deTelecomunicación.UniversidaddeValladolid.17.35h–17.55hO.6.5. Invited: Trends incrystallinegrowthof lowcostandefficientphotovoltagecells Vicente Parra, Ismael Guerrero, Teresa Carballo, David Cancillo, Andrés Black. DC Wafers Investments, S.L. Ctra Madrid km 320. 24227 Valdelafuente, León. 17.55h–18.15hO.6.6.Invited:Degradationsignaturesofhigh‐powerlaserdiodesJuanJiménez,J.Anaya,V.Hortelano,J.Souto,A.Martín DepartamentodeFísicadelaMateriaCondensada,I+Dbuilding,PaseodeBelén11,47011.UniversidaddeValladolid.18.15h–18.30h COFFEEBREAK

Dr.PedroGago:CidersolTecnologíaSolar,S.L.

Dr.AlfonsoCalderón:CenitSolar

Dr.TeodosiodelCaño:OnyxSolar

Dr.VicenteParra:DCWafers

18.30h–19.45h Auditorium,PalaciodeCongresosCondeAnsúrez,thirdfloor

ROUNDTABLE.Prof.JuanJiménez,Univ.Valladolid.Chair

19.45h–20.00h Auditorium,PalaciodeCongresosCondeAnsúrez,thirdfloorCLOSINGREMARKS

www.cde2013.es