a silicon vertex tracker for atsushi taketani 1. physics goal 2. structure of detector 3. status and...
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A Silicon Vertex Tracker for
Atsushi Taketani
1. Physics goal
2. Structure of detector
3. Status and plan
4. Expected performance
5. Summary
PHENIX Vertex Group (86 Participants from 15 institutions)
M. Baker, R. Nouicer, R. Pak, A. Sukhanov, P. Steinberg, Z ChaiBrookhaven National Laboratory, Chemistry Department
Z. LiBrookhaven National Laboratory, Instrumentation Division
J.S. Haggerty, J.T. Mitchell, C.L. Woody, E. O’Brien, D. LynchBrookhaven National Laboratory, Physics Department
A.D. FrawleyFlorida State University
J. Crandall, J.C. Hill, J.G. Lajoie, C.A. Ogilvie, A. Lebedev, H. Pei, J. Rak, G.Skank, S. Skutnik, G. Sleege, G.Tuttle
Iowa State University, Ames, M. Tanaka
KEKN. Saito, M. Togawa, M. Wagner
Kyoto UniversityH.W. van Hecke, G.J. Kunde, D.M. Lee, M. J. Leitch, P.L. McGaughey, W.E. Sondheim
Los Alamos National LaboratoryT. Kawasaki, K. Fujiwara
Niigata UniversityT.C. Awes, M. Bobrek, C.L. Britton, W.L. Bryan, K.N. Castleberry, V. Cianciolo, Y.V. Efremenko,
K.F. Read, D.O. Silvermyr, P.W. Stankus, A.L. Wintenberg, G.R. YoungOak Ridge National Laboratory
Y. Akiba, J. Asai, H. En’yo, Y. Goto, J.M. Heuser, H. Kano, H. Ohnishi, V. Rykov, T. Tabaru, A. Taketani, K.Tanida, J. Tojo, Y. Onuki
RIKENS. Abeytunge, R. Averbeck, K. Boyle, A. Deshpande , A. Dion, A. Drees, T.K. Hemmick,
B.V. Jacak, C. Pancake, V.S. Pantuev, D. Walker Stony Brook University
B. Bassalleck, D.E. Fields, M. Malik, C. HagemannUniversity of New Mexico
O. Drapier, F. Fleuret, M.Gonin, R. G. de Cassagnac, A. Romana E. Tujuba Eole PolytechniqueK. Kruita, Y. InoueRikkyo Univesity
Physics Goals
Heavy Ion program
• Potential enhancement of charm production.
• Open beauty production.• Flavor dependence of jet quen
ching and QCD energy loss.• Beauty and charm separation• Accurate charm reference for q
uarkonium.• Thermal dilepton radiation.• Upsilon spectroscopy, e+e- de
cay channel• -Jet correlation
Spin program
• Investigating nucleon spin structure by polarized proton-proton collider to utilize quark/gluon as probe, instead of DIS lepton.
• gluon polarization by using beauty / charm final state.
• gluon polarization by using + jet final state.
• Flavor decomposition by using W->e channel.
Open up new horizon!
Charm and bottom identification by displaced vertex
Jet identification with larger acceptance
Physics GoalSpin ProgramHeavy Ion Program
b contribution ?
V2
Pt [GeV]
Glu
on P
olar
izat
ion
NSAC recommendationOctober 7, 2004
Within a constant level of effort budget, the Subcommittee recommends that certain essential investments be made. These include:
Construction of the PHENIX Silicon Vertex Tracker and the STAR Time-of-Flight Barrel;
Participation in the LHC Heavy-Ion program; Investment in RHIC accelerator and detector R&D; Construction of the EBIS; Support at the present level for university and national
laboratory research; Provision for RHIC running time sufficient to preserve
the integrity of the Heavy-Ion and Spin Physics programs.
Current PHENIXPioneering High Energy Nuclear Interaction eXperiment
PHENIX Detector1 Central Arm
e, g, Charged Hadrons detection |h|<0.35, Df=p
2, Muon Arm m detection 1.2<|h|<2.4, 2p in f
3, Forward detectors Luminosity Monitoring Centrality Local polarimetery
Good particle identification (But no direct b/c identification)
High Rate and High Detector granularity.
Limited geometrical coverage (Not 2in central region)
Si Vertex Tracker
Requirements for Vertex Tracker
• High precision tracking for displaced vertex measurement. 40m displaced vertex resolution, c ~ 100m(D), ~400m(B)
• Large coverage tracking capability with momentum resolution (||<1.2 , and full azimuthally with /P ~ 5%P)
• High charged particle density ‘dN/d’ ~ 700 @=0• High Radiation Dose ~100KRad@10Years• High Luminosity @PP -> High rate readout• Low Material Budget <- avoid multiple scattering and photon c
onversion for electron measurement by outer detectors.
1232102 scm
Physics side
Environment side
Structure Barrel region
• ||<1.2, almost 2 in
• Pixel sensor at inner 2 layers
• Strip sensors at outer 2 layers
Forward region
• 1.2<||<2.7, 2p in
• 4 layers of mini strip
(50 x 2000 to 11000 m)
• Trigger capable
Pixel
Strip
Poster by G.J.Kunde(#297)Poster by K.Fujiwara(#292)
D.E.Field (#290)R=2.5 and 5cm
R=10 and 14cm
PIXEL (Sensor and Readout)
Pixel size( x z ) 50 µm x 425 µmSensor Thickness 200umr = 1.36cm, z = 1.28 cm256 x 32 = 8192 channel / sensor4 sensor / chip4 chip / ladder
Readout by ALICE_LHCB1 chip
• Amp + Discriminator / channel
•Bump bonded( 2 dim. Soldering) to each pixel
•Running 10MHz clock ( RHIC 106nsec )
•Digital buffer for each channel > 4usec depth
•Trigger capability > FAST OR logic for each crossing
Used at NA60 (Rad hard)
PIXEL readout
15μm
Al-Kapton Bus readout to minimize material (120micron pitch )
256
32
Pilot module
4x parallel readout 128bit width bus
PHENIX Digital Pilot•ALICE chip is 32bit input/40MHz x 16bit output•New chip is 64bit input/40MHz x 32bit output
Ver.1 is running.
Ver.2 will come in Summer
PIXEL readout
Strip layerSensor elements:
Pixels: 80 µm 1 mm, projective readout via
double metal XU/V “strips” of ~3 cm length.
Developed at BNL Instrumentation Gr.
Two strip-pixel arrays on a single-sided wafer of 500 µm thickness, with 384 + 384 channels on 3 x 3 cm2 area.
new design:
“lateral” SVX4 readout.
Made by Hamamatsu
Initial design:
“longitudinal” readout.
Made by SINTEF
Single sided
1+1 dimensional readout
( X and U direction)
3cm3cm sensor 2 / chip
768 X strip and 768 U strips/chip
Position resolution is 25m by test beam
SVX4X2
“RC Chip”
SVX4U1
“RC Chip”
SVX4U4
“RC Chip”
SVX4X3
“RC Chip”
SVX4X1
“RC Chip”
SVX4X6
“RC Chip”
SVX4U6
“RC Chip”
SVX4U5
“RC Chip”
SVX4U3
“RC Chip”
SVX4U2
“RC Chip”
SVX4X4
“RC Chip”
SVX4X5
“RC Chip”
RCC
Control signal daisy-chain
Data signal daisy-chain
Power daisy-chain
SVX4X2
“RC Chip”
SVX4X2
“RC Chip”
SVX4U1
“RC Chip”
SVX4U1
“RC Chip”
SVX4U4
“RC Chip”
SVX4U4
“RC Chip”
SVX4X3
“RC Chip”
SVX4X3
“RC Chip”
SVX4X1
“RC Chip”
SVX4X1
“RC Chip”
SVX4X6
“RC Chip”
SVX4X6
“RC Chip”
SVX4U6
“RC Chip”
SVX4U6
“RC Chip”
SVX4U5
“RC Chip”
SVX4U5
“RC Chip”
SVX4U3
“RC Chip”
SVX4U3
“RC Chip”
SVX4U2
“RC Chip”
SVX4U2
“RC Chip”
SVX4X4
“RC Chip”
SVX4X4
“RC Chip”
SVX4X5
“RC Chip”
SVX4X5
“RC Chip”
RCC
Control signal daisy-chain
Data signal daisy-chain
Power daisy-chain
3cm 6cm sensor
SVX4 Readout chip
Developed by FNAL for TEVATRON RUN2b (Rad hard)8 bit ADC for each channel128 channel per chip
3 SVX ChipPacking factor is sameControl by onboard FPGA
Readout Test board (Testing now)
Strip Readout
Schedule and status
• Pixel Readout test End of 2005• Strip Readout test Fall of 2005.• Structure design study Start now• Prototype ladder Early 2006• Production (Japan) Start in 2005 • Production (US) 2007• Installation complete 2009 (Possible early partial implementation)
• Total cost ~8M US$ (Japan, US, France)
Expected Performance
Layer radius Sensor Occupancy
Layer 1 2.5 cm Pixel 0.53 %
Layer 2 5.0 cm Pixel 0.16%
Layer 3 10.0 cm Strip 4.5 % (x-strip)
4.7 % (u-strip)
Layer 4 14.0 cm Strip 2.5 % (x-strip)
2.7 % (u-strip)
Expected occupancy at Au-Au 200GeV most central event Distance to the Closest Approach [cm]
D0 decay
Collision Vertex
Spin performance
Using only Photon information
parton X reconstruction by + Jet
Photon + 2VTX tracker
Great improvement with VTX
Summary• PHENIX Silicon Vertex Tracker will open new
physics horizon for both Heavy Ion and Spin program of RHIC.
• There are two of inner pixel layers, two of outer strip layers and forward mini-strips
• Hardware R&D work is on going.• Completer installation in 2009 for RHIC
RUN9(2009/2010). • Plans underway for early partial implementation.
Related Posters
Forward Silicon G.J. Kunde (#297)
Pixel Layer K. Fujiwara(#292)
Strip Layer D.E. Field (#290)
VTX Layer R1 R2 R3 R4
Geometrical dimensions
R (cm) 2.5 5 10 14
z (cm) 21.8 21.8 31.8 38.2
Area (cm2) 280 560 1240 1600
Channel count Sensor sizeR z (cm2)
1.28 1.36(256 × 32 pixels)
3.43 × 6.36(384 × 2 strips)
Channel size 50 425 m2 80 m 3 cm(effective 80 1000 m2)
Sensors/ladder 2 8 5 6
Ladders 10 20 18 26
Sensors 160 320 90 144
Readout chips 160 320 1080 1728
Readout channels 1,310,720 2,621,440 138,240 221,184
Radiation length(X/X0)
Sensor 0.2% 0.5 %
Readout 0.16% 0.8 %
Bus 0.14%
Ladder & cooling 0.7% 0.7 %
Total 1.2% 2.0 %
Structure summary (Backup)