a synchronous egan® fet class e rectifier for a highly resonant wireless power receivers ·...
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A Synchronous eGaN® FET Class E Rectifier for Highly Resonant Wireless Power ReceiversMichael de Rooij and Yuanzhe Zhang
Outline
• Resonant wireless power receivers and
rectifiers
• Class E rectifier
• Synchronization
• Experimental results
• Conclusions
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Resonant Wireless Power Overview
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Amplifier
Coil
Tuning +
Supply Source
Source
Coil
Device
Coil
LoadDevice
Coil
Tuning
Rectifier
Full Bridge Rectifiers
4
• Simple
• popular choice at low
frequency
• High Losses at 6.78 MHz
EPC – The Leader in GaN Technology Michael de Rooij and Yuanzhe Zhang www.epc-co.com
Zcoil
Vrect
D1Cs
Cout Load
D2
D3 D4 Zcoil
VrectQ1Cs
Cout Load
Q2
Q3
Q4
Typical diode rectifier Synchronous rectifier
• More efficient
• Complicated gate drive
• Requires controller
• Operating power offsets benefit
Typical diode location: in series with output
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Class E Rectifiers
Zcoil
Cs
Zcoil
CsVDCVDC
[1] M. Liu, M. Fu, and C. Ma, “Parameter Design for a 6.78-MHz Wireless Power Transfer System Based on
Analytical Derivation of Class E Current-Driven Rectifier,” IEEE Trans. Power Electron., vol. 31, no. 6,
pp. 4280-4291, June 2016.
[2] S. Aldhaher, P. C.Luk, K. E. K. Drissi, and J. F. Whidborne, “High-Input-Voltage High-Frequency Class E
Rectifiers for Resonant Inductive Links”, IEEE Trans. Power Electron., vol. 30, no. 3, pp 1328-1335, Mar.
2015.
[1] [2]
• Source grounded GaN FET
• Simple gate drive
• High efficiency – no QRR, low COSS, CISS, RDSon
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Proposed Synchronous Class E
Rectifier
Vrect
Q1Csh
LexLck
VDSID
Cout
Zcoil
Cs
Ideal Waveforms
VDS ID
time
3.56 x VOut
V / I
50%
• RX coil zero current cross detect
• Output disabled at low current (<Ith)
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Gating Synchronization
Coil Current
Sensor
Magnitude and
zero cross detectIth
Icoil
Phase
shift To gate
driver
vc
RX Coil
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Gating Synchronization Detail
EN
SIG2
SIG1
C2
C3
C4
C5
L4
L5U1
OUT1
Vref
Vref
EN
RL1
SIG2SIG1
RS1 RS2RT0
D1 D2
a) Current sensing with waveform clipping
b) AC-coupled zero crossing detect
c) Magnitude detect
(a) (b)
SIG2
SIG1
C7
U2
Vcc
EN
C8D8
D7D6
C9 R4R4
R5
R6 R7
R8
(c)
• Transmit coil current: 1.375 ARMS
• Receive coil at 25 mm distance
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Experimental Setup
From
Coil
Synchronization circuit Class E rectifier
LexEPC2012C
Lck
DC
output
Clock outputs Clock input
Csh = 77 pF
Lex = 540 nH
Lck = 22 µH
• 60 V best in class Schottky diodes
• Full bridge Configuration
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Diode Rectifier for Comparison
Rectifier
Diodes
DC output
DC
Capacitors
From Coil
• Ith set to 100 mARMS
• Compensated for proper phase shift
• Both gate signals are off in “diode” mode
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Synchronization Circuit Test
vDS 5 V/div
icoil, RX
1 A/div
≈ 0 V
Icoil,RX = 99 mA rms, ‘diode’ mode Icoil,RX = 127 mA rms
vDS 5 V/div
icoil, RX
1 A/div
≈ − 2 V
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Measured Efficiency
83.0%
83.5%
84.0%
84.5%
85.0%
85.5%
86.0%
86.5%
87.0%
5 10 15 20 25 30 35 40
Effic
iency
Output Power [W]
Diode
Class E
Class E w/Gate drive
Total system efficiency at fixed 40 Ω DC load
Impact of
Operating power
• Fixed Icoil,TX = 1.375 ARMS
• Variable DC load (Resistance)
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Measured Efficiency
Rload
PFETloss
Rload_Design
Optimal DesignCan be improved
vDS
20 V/div 1 A/div
icoil,TXicoil,RX
Experimental Waveforms
14
Fixed Icoil, TX = 1.375 ARMS
40 Ω load, 38.2 VDC,36 W output
67 Ω load, 40 VDC,24 W output
EPC – The Leader in GaN Technology Michael de Rooij and Yuanzhe Zhang www.epc-co.com
Hard switching
vDS
20 V/div 1 A/div
icoil,TXicoil,RX
Conclusions
15
6.78 MHz eGaN FET synchronous class E rectifier
• More efficient than Schottky diode
• > 20% lower system power loss at > 35 W load
• Concept can be monolithically integrated
– Gate driver
– Signal detect
EPC – The Leader in GaN Technology Michael de Rooij and Yuanzhe Zhang www.epc-co.com
www.epc-co.com
Thank You
EPC – The Leader in GaN Technology Michael de Rooij and Yuanzhe Zhang www.epc-co.com