Advances in GaNAmplifier Technology

May 2016

Gallium Nitride Advantages

• Higher power to displace TWTA

• Smaller enclosure at higher power

• Reduction in power consumption

GaN Power Measurement

GaN is not as linear as GaAs.

P1dB is not meaningful.

We need a different way to measure output

power.

GaN Power Measurement

Accepted industry convention for GaN:

Rate at PSat – State PLinear

Spectral Regrowth at -30 dBc AND

IMD3 at -25 dBc relative to combined power

of two carriers

GaN in Context

GaN Improvements

Enough background.

This was to be about advances in the

technology.

What’s new?

IBUCG

IBUCG

Position as TWTA replacement• 400W C• 150/200W Ku• 400W X(Rated at Psat)

200W Ku IBUCG Improvement

200W Ku IBUCG Improvement

Summary IBUCG Improvements

PLinear improvements – Ku-Band

150W was +49 dBm, now +50 dBm

200W was +50 dBm, now +51 dBm

Rather expensive dBs. A 13% increase in

power at no change in investment.

IBUC2G

IBUC2G

“2” Indicates package size

• 100W C&X-Bands

• 80W Ku-Band

• 40W Ka-Band

• 1/3rd the size of the GaAs IBUCR

80W Ku IBUC2G Linearity

80W Ku IBUC2G SR

80W Ku IBUC2G IMD

80W Ku IBUC2G in Context

IBUC2G Improvements

Plinear Comparisons 2015 to 2016 models

• 100W C was +47 dBm, now +49 dBm

• 80W Ku was +46 dBm, now +48 dBm

A 2 dB improvement in useable output powerComparable to GaAs IBUC2 models, meaning…

GaN is catching up with GaAs technology

Thank You!Contact Info:Ron Merritt+1 770 476 3205Rmerritt@terrasatinc.com

Web site:www.terrasatinc.com