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Advances in GaNAmplifier Technology
May 2016
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Gallium Nitride Advantages
• Higher power to displace TWTA
• Smaller enclosure at higher power
• Reduction in power consumption
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GaN Power Measurement
GaN is not as linear as GaAs.
P1dB is not meaningful.
We need a different way to measure output
power.
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GaN Power Measurement
Accepted industry convention for GaN:
Rate at PSat – State PLinear
Spectral Regrowth at -30 dBc AND
IMD3 at -25 dBc relative to combined power
of two carriers
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GaN in Context
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GaN Improvements
Enough background.
This was to be about advances in the
technology.
What’s new?
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IBUCG
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IBUCG
Position as TWTA replacement• 400W C• 150/200W Ku• 400W X(Rated at Psat)
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200W Ku IBUCG Improvement
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200W Ku IBUCG Improvement
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Summary IBUCG Improvements
PLinear improvements – Ku-Band
150W was +49 dBm, now +50 dBm
200W was +50 dBm, now +51 dBm
Rather expensive dBs. A 13% increase in
power at no change in investment.
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IBUC2G
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IBUC2G
“2” Indicates package size
• 100W C&X-Bands
• 80W Ku-Band
• 40W Ka-Band
• 1/3rd the size of the GaAs IBUCR
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80W Ku IBUC2G Linearity
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80W Ku IBUC2G SR
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80W Ku IBUC2G IMD
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80W Ku IBUC2G in Context
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IBUC2G Improvements
Plinear Comparisons 2015 to 2016 models
• 100W C was +47 dBm, now +49 dBm
• 80W Ku was +46 dBm, now +48 dBm
A 2 dB improvement in useable output powerComparable to GaAs IBUC2 models, meaning…
GaN is catching up with GaAs technology