alshareef student orientation aug 2014

7/29/2019 Alshareef Student Orientation Aug 2014

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Materials Science & Engineering

Program at KAUST

Husam N. [email protected]

Materials Science & Engineering

King Abdulla University of Science & Technology


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Energy Harvesting& Storage

Electronic &Magnetic Materials

Material Design &Synthesis

Material Science & Engineering Research Thrusts


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Energy Harvesting & Storage

SolarEnergy

Fuel CellsEnergyStorage

EnergyHarvesting

Electronic & Magnetic Materials

Polymer &Oxide

Electronics

Nano

ElectronicsMagneticMaterials

Theory &Modeling

Material Design & Synthesis

PolymersInorganicMaterials

MetallicNanostructure

Carbon BasedMaterials

Material Science & Engineering Research Thrusts


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Electronic Materials

Energy Storage

Atom Probe

TomographyElectronic Structure

Calculations

Polymeric

synthesis for

energy &

electronics

Magnetic Materials

Solar CellsSolid Oxide

Fuel Cells

Materials Science & Engineering Faculty

Nanodevices

Nanoscale

Characterization

Organic Electronics

& Organic

Photovoltaics

Inorganic

synthesis for

energy

applications

Magnetism

TheoryNanomaterial

Synthesis

Semiconductor

Spectroscopy

Carbon Based

Materials, Electron

Microscopy

Biomembranes

& Biophysics

Husam Alshareef Enzo Di Fabrizio Enrico TraversaUdoSchwingenschlogl Talaat Alkassab Tao Wu Iman Roqan

Osman Bakr Aurelien Manchon Aram Amassian

Affiliated Faculty

Pedro Costa Alex RothenbergerSahraouiChaieb

PierreBeaujuge


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Research Thrusts in Alshareef Group

Emerging Electronics

Energy Harvesting &

Storage

Nanomaterials & Devices

[email protected]

Prof. Husam Alshareef


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Three dimensional electrode design withpseudocapacitive oxide electrodes

W. Chen , R.B. Rakhi, L. Hu, Y.Cui, & H.N. Alshareef, Nano Letters 11, 5165 (2011).

MnO2depositedonsponge

Spongecoated withcarbonnanotubes

Alshareef [email protected]


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Three dimensional carbon fiber electrode design

Introduce carbon-fiber currentcollector into reaction vessel

Carbon microfiber inducessignificant morphological

changes in Co3O4 nanowiresassemblies

Carbon microfiber allows moreefficient electrolyte access andis completely surround by

Co3O4 nanowires

Nearly double the stored energydensity at the same powerdensity of the supercapacitors

R.B. Rakhi, W. Chen, H.N. Alshareef, Nano Letters 12, 2559 (2012)

Alshareef Group

[email protected]


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Printed electronics

The printed electronics & functional materials market is projected toshow significant growth, reaching $250B by 2025

Growth will occur in multiple segments, including electronics, displays, andphotovoltaic. Electronics is biggest driver

Polymers, low temperature processing, large area process to play major role

Alshareef Group

I kj i d i l (f l i )


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Inkjet printed active polymer (ferroelectric)memory on SABICs ULTEM

Low cost, large area electronicmemory on SABICs ULTEM

All-polymer including wiring

Solution deposition or inkjetprinting

Nonvolatile, read/writememory circuits

More complex, larger areadevice under development

U. Bhansali and H.N. Alshareef, Microelectronic Engineering (in press)

Alshareef Group


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10

Device Fabrication


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Research in Dr. Schwingenschlgls Group

Computational Physics and Materials Science (CPMS)

[email protected]

Dr. Udo Schwingenschlgl

First principles calculations Structural and electronic properties of nanostructured systems Particularly those including surfaces and interfaces


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[email protected]

Prof. Aram Amassian

E i PV h P t ti l t b L C t


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Low-Cost Materials Low-Cost InstallationLow-Cost Manufacturing

Emerging applications

SONY.netEarth-Abundant materials

Emerging PVs have Potential to be a Low CostSource of Clean Energy

Current organic PV World record: 12%

Prof. Aram [email protected]

K t ti d i t f ffi i


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Thin film

microstructure

Phase

separation

Deviceperformance

Thin film processingand

post-processing

Predictive modeling

-thermodynamics

-kinetics

Single

crystal

engineering

Key to continued improvement of efficiency:Materials Feedback loop

Molecular Design

Prof. Aram Amassian

[email protected]

U i l d i l f t lli i


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10-5

10-4

10-3

10-2

10-1

100

TES-ADT

TIPS-Pn

TCPS-CN-Pn

Mobility(cm

2/Vs)

TCPS-Cl-Pn

1.0 1.5 2.0 2.50.0

0.5

1.0

1.5

c/a

PCE

(%)

Working solar

cells

Working

transistors

SiO2

source drain

Si

semiconductor

2D powder3D powder

In-plane charge

transport

Vertical charge transport

X-ray scatteringX-ray scattering

ab

Unit cel l anisotrop y d etermin es wh ether mater ia l is sui table for electronics or for PV!

Universal design rules for crystalline organicsemiconductors


C ll id l Q t D t PV d b


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2005 2006 2007 2008 2009 2010 2011 2012 20130

1

2

3

4

5

6

7

8

AM

1.5Pow

erConversionEfficiency

Publication year

Tang et al, Nat Mat2011

Ip et al, Nat Nanotech 2012

%

8.5%

Colloidal Quantum Dot PVsprocessed byspin-coating


Prof Pierre M Beaujuge & Group


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Prof. Pierre M. Beaujuge & GroupMaterials Science & EngineeringChemical Sciences

P. M. Beaujuge* & J. M. J. Frchet* JACS,2011, 133, 2000920029

Research in the Group

Macromolecules for Energy Storage & Delivery

Organic materials for Solar Cells & Electronics

Organic-Inorganic Hybrids for Nano-Electronics

Surface/Interface Engineering

[email protected]


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Material Design

& Synthesis

Fundamental Material

Characterization

Device Testing &

Characterization

Device Optimization

& Innovation

Identify Technological

Barriers and Challenges

Intellectual

Property

e.g. harvesting of lightcharge generationcharge transport & collection

Technology

Transferpower conversion efficiency

organic & inorganicnanocomposites

e.g. polymeric &small molecule

semiconductors

carrier dynamics

e.g. morphologyprocessing

structural analysis

spectroscopy

Organic Solar Cells

From material design to deviceoptimization

Prof. Pierre Beaujuge

[email protected]

Group Record: 8 5% P f Pi B j


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Group Record: 8.5%(single cell)

C. Cabanetos, A. El Labban, J. A. Bartelt, J. D. Douglas, W. R. Mateker, J. M. J. Frchet, Michael D.McGehee, & Pierre M. Beaujuge* JACS,2013, Just Accepted

0.0 0.2 0.4 0.6 0.8 1.0-14

-12

-10

-8

-6

-4

-2

0

J(mAcm

-2)

V

(2EH/C8)

(2EH/C7)

(2EH/C6)

a) 400 500 600 7000.00.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

E

QE

Wavelength (nm)

(2EH/C8)

(2EH/C7)

(2EH/C6)

b)

TEM (KAUST)PBDTTPD(2EH/C8)

EQE>60%

Prof. Pierre Beaujuge

[email protected]

PI: Osman M Bakr


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Incident

light

Transparent

anode

Ac velayer

Nanopar cle

Cathode

23

Centrifugation

Nanopart ic les for Solar

Cells and Op toelectron ics

Advanced Nanopart ic le Separat ion

and Character izat ion Methods

Bakr et al., Nanoscale10.1039/C3NR00990D (2013)Bakr et al., Nano Letters, 12, 1007 (2012)Bakr et al., Nature Comm unicat ions,2, (2011)

Bakr et al., Nanoscale, 4, 4269 (2012)Bakr et al., Journal of the Amer ican Chemical Society, 134, 11856 (2012)Bakr et al., Journal of Opt ics, 12, 065001 (2010)Bakr et al., Plasmonics, 5, 85 (2010)Bakr et al., Ang ewandte Chem ie. Int. Ed., 48, 5921 (2009)

! "#$%&' () *+ , !-

! ". *%&' (#/-

! ") //%&' (01-

2 nm

PI: Osman M. BakrAssistant Professor

[email protected]


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Optical spectroscopy lab is designed to

understand the behavior of the materialsand devices by mean of differentadvanced optical characterization.

For example: Photoluminescence Photoluminescence

excitation Time-resolved

spectroscopy (using

streak camera) Absorption Electroluminescent Micro-Photoluminescence

Optical Characterization of Semiconductors

Prof. Iman Roqan

[email protected]


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III-Nitrides for blue and UVLEDs we were successful toobtain deep UVluminescence (250 to 280nm) from AlGaN QWs by

investigating its structuraland optical properties.

Diluted magneticSemiconductors We are thefirst to obtain very strongferromagnetism from Gddoped ZnO by investigatingits magnetic and opticalproperties certain growthconditions.

0 2 4 6 8 10

distance (m)

4.50

4.51

4.52

4.53

4.54

4.55

4.56

centre

(eV)

Luminescence map

Prof. Iman Roqan

Optical Characterization of Semiconductors

[email protected]

Al d R th b


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Research interests

Synthetic inorganic chemistry; crystalline nanoparticles;coordination chemistry of novel anions

Solution-processable inorg anic mater ials for so larcells

Exploratory synthesis of crystalline or amorphousporous solids to discovernew m ater ia ls for o pt icalapplic ations , water-purif ication and gas-separatingmembranes.

Background

2002 Ph.D., University of Cambridge, United Kingdom 2007 Habilitation, University of Karlsruhe, Germany 2010 Visiting Scholar, Northwestern University, USA

since 3.2011 in KAUST

Alexander RothenbergerAssoc. Prof., Chemical Science

Prof. Alex Rothenberger

[email protected]


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Spintronics Theory GroupPrincipal Investigator: Aurelien Manchon, [email protected]

External CollaboratorsS. S. P. Parkin, IBM Almaden

P. Bhattacharya, U. Of Michigan

KAUST CollaboratorsU. Schwingenschlogl, MSE

X. X. Zhang, Core Labs

J. Kosel, EE

The Spintronics Theory Group

4 post-docs, 7 PhD students

20+ publications (PRL, NanoLetters, PRB, APL)

Power dissipation in CPUs

Energy saving overthe past 15 years hasresulted in a controlledincrease of the worldenergy consumption

source: IEA

Energy saving, and the use of energy

efficient devices, is a viable routetowards the control of energyconsumption.

Spin electronics, based on magneticnanodevices, is a solid response toreduce power loss in microelectronics

devices and system

One solution: energy saving

Towards energy efficient devices based on spin electronics

Significant increase of thermal lossLimits speed and density of chips


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Nov. 2012: Everspin Technologies leads the industry in commercializing the first Spin-TorqueMagnetoresistive RAM (ST-MRAM)

Dec. 2012: Toshiba's New STT-MRAM Beats SRAM Power Drain by 90%

Spintronics for non-volatile magnetic memories

Conventional SemiconductorTechnology

Volatility: maintaining the information in D&SRAMrequires regularrefreshingScalability: requires a large number of transistors andreducing the size of chip enhances leakage current

Large power dissipation Supercomputers will require the equivalent of a

nuclear power plant to operate

Magnetic Random AccessMemories

- Magnetic storage rather than charge storage- Fundamentally non-volatile- Controlled electrically (spin torque)- Reduce leakage current

Main challenge: reducing the critical switching current by controlling of the device physi

Random access memories (RAM) and RF-oscillators are key components ofcomputers

Scalable, intrinsically non-volatileDenser, faster,cheaper!!


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Spin diffusion in Magnetic tunnel junctionsCollaboration with UMP CNRS/Thales

Manchon et al., Physical Review B 2012

Objective: controling the current density required to write the bit of information by

structural design

Exploiting Ferroelectric barriers

Useinov & Manchon, submitted to Physical Review B

Available on ArXiv.org

Asymmetric Magnetic tunnel junctionsCollaboration with Samsung

Oh, Park, Manchon et al., Nature Physics 2009

(This work has been realized prior to KAUST)

Spintronics for non-volatile magnetic memories

We showed that by fabricating asymmetricalstructures, it is possible to dramatically improve the

junction performances by quenching current-inducednoise.

We predict that by controlling the spin transport in themetallic electrodes (spin dephasing/diffusion), one canmodify the voltage dependence of the torque.

Experimentalconfirmation of thisprediction is currentlycarried out atCNRS/Thales

We propose that using ferroelectric barriers instead ofconventional oxides (i.e. BaTiO3 rather than MgO)may result in additional tunability of the spin torqueeffect.

Depending on the junctionparameters, the spin torquecan be enhanced, quenchedand even become asymmetric(diode-like behavior). Couplingferroelectricity with spin torque

opens new avenues forswitching current reduction


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Rashba Spin-orbit torque in single magnets

X. Wang and A. Manchon, Phys. Rev. Lett. 2012

Hang et al., Appl. Phys. Lett 2013; Ortiz Pauyac et al., Appl. Phys. Fett. 2013

Proposing a new paradigm: exploiting interface-controlled spin orbit coupling

Experimental observation

Miron Nature 2010, 2011Liu PRL 2011, Science 201

Instead ofspin transfer torque we proposed

Spin orbit torque (Manchon PRB 2008, 2009).Works in single ferromagnets, offers large flexibilityfor devices (including memories and oscillators)

Beyond spin transfer torque MRAM

We theoretically identify the nature of the spin-orbit torque in very simple structures. This pavesthe way to memory devices containing a single

magnetic layer

Interfacial control of domain wall motionCollaboration with IBM

Spin Hall torque in single magnetsCollaboration with NIST, Postech, Korea U.

Haney et al., Physical Review B 2013

Spin Hall effect is an alternative way to produce thisspin orbit torque. This effect is studied in details andpresents different characteristics compared to Rashbatorque.

Grytsyuk et al., to be submitted to Physical Review Letters

We theoretically show how interfacial design can leadto specific spin configuration that results inoutstanding properties of magnetic domain walls.

Ultra high density magnetic data storage


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Ultrafast demagnetization and switching

Manchon et al., Physical Review B 2012

Ultra-high density magnetic data storage1997-now: Giant Magnetoresistance led to high density data storageA. Fert & P. Grunberg, Nobel Prize 2007

2012: Seagate paves the way for big hard drive capacity gainsThe limit of 1Tbit/inch2 is beaten

Spin current generation for dissipationless devices

Also (on-going)Non-equilibrium heat managementThermal storage in ferrimagnetsMagnon-induced torque

Spin-relaxation in SemiconductorsCollaboration with the U. of Michigan

Banerjee et al., Nano Letters 2011; Physical Review B 2012

Generating spin currents in nanostructuresCollaboration with Fudan & JAEA, Japan

Wang et al. Physical Review B, Rapid Communication 2013

The control of magnetization by femto-second lasersoffers fantastic opportunities for ultrahigh densitystorage and ultrafast recording. We propose a modelto describe this effect

This joint experimental/theoretical study addresses theorigin of weak spin relaxation in InGaN nanowires,demonstrating the capacities of this materials for

semiconductor spintronics such as spin lasers and spinlogic

We showed that pure spin currents can be obtained insimple metallic structures by interfacial design. Thisproposal could have significant implications in charge-less

spin devices.

Alexander Rothenberger


29/40

Prof. Tom WuNew lighting materials/devices

The first tin oxide based

light-emitting diode

NPG Asia Mater. 4, e30 (2012)

Solar cells made of complex oxides

Complex oxides like SrTiO3offer novel

functionalities due to strong correlated

electrons, spin, orbital and lattice.

AIP Ad vances2, 042131 (2012)

[email protected]

Alexander RothenbergerAssoc. Prof., Chemical Science


30/40

Prof. Tom Wu

[email protected]

Electric double layer transistor using oxide channels

Phys. Rev.B 87, 155151 (2013).

Exchange bias and spin glass in magnetic oxide heterostructures

Phys. Rev.B87, 054428 (2013).


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MSE Curriculum

M t D (MS)


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Masters Degree (MS)

MS Thesis option


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12 credits of thesis research (MSE 297) or

12 of internship (MSE 295), but internship must berelated to thesis

Other variation are possible, but these are themain two options

Please consult MSE curriculum & your academicadvisor

MS Thesis option

MS N Th i ti


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MS Non-Thesis option

Students must complete the remaining 6 credits in one or a combination ofthe following

PhD Degree


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PhD Degree


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Students entering with a masters degree typically have to take four classes


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alshareef student orientation aug 2014

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