advances in gan amplifier technology may 2016 2016/160616 dubna terrasat... · 2016. 6. 21. ·...
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Advances in GaNAmplifier Technology
May 2016
Gallium Nitride Advantages
• Higher power to displace TWTA
• Smaller enclosure at higher power
• Reduction in power consumption
GaN Power Measurement
GaN is not as linear as GaAs.
P1dB is not meaningful.
We need a different way to measure output
power.
GaN Power Measurement
Accepted industry convention for GaN:
Rate at PSat – State PLinear
Spectral Regrowth at -30 dBc AND
IMD3 at -25 dBc relative to combined power
of two carriers
GaN in Context
GaN Improvements
Enough background.
This was to be about advances in the
technology.
What’s new?
IBUCG
IBUCG
Position as TWTA replacement• 400W C• 150/200W Ku• 400W X(Rated at Psat)
200W Ku IBUCG Improvement
200W Ku IBUCG Improvement
Summary IBUCG Improvements
PLinear improvements – Ku-Band
150W was +49 dBm, now +50 dBm
200W was +50 dBm, now +51 dBm
Rather expensive dBs. A 13% increase in
power at no change in investment.
IBUC2G
IBUC2G
“2” Indicates package size
• 100W C&X-Bands
• 80W Ku-Band
• 40W Ka-Band
• 1/3rd the size of the GaAs IBUCR
80W Ku IBUC2G Linearity
80W Ku IBUC2G SR
80W Ku IBUC2G IMD
80W Ku IBUC2G in Context
IBUC2G Improvements
Plinear Comparisons 2015 to 2016 models
• 100W C was +47 dBm, now +49 dBm
• 80W Ku was +46 dBm, now +48 dBm
A 2 dB improvement in useable output powerComparable to GaAs IBUC2 models, meaning…
GaN is catching up with GaAs technology
Thank You!Contact Info:Ron Merritt+1 770 476 3205Rmerritt@terrasatinc.com
Web site:www.terrasatinc.com
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