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AFRL-AFOSR-JP-TR-2016-0087
Frequency Agile Microwave Photonic Notch Filter in a Photonic Chip
Benjamin EggletonUNIVERSITY OF SYDNEY
Final Report10/21/2016
DISTRIBUTION A: Distribution approved for public release.
AF Office Of Scientific Research (AFOSR)/ IOAArlington, Virginia 22203
Air Force Research Laboratory
Air Force Materiel Command
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3. DATES COVERED (From - To) 14 May 2014 to 13 May 2016
4. TITLE AND SUBTITLEFrequency Agile Microwave Photonic Notch Filter in a Photonic Chip
5a. CONTRACT NUMBER
5b. GRANT NUMBERFA2386-14-1-4030
5c. PROGRAM ELEMENT NUMBER61102F
6. AUTHOR(S)Benjamin Eggleton, David Marpaung
5d. PROJECT NUMBER
5e. TASK NUMBER
5f. WORK UNIT NUMBER
7. PERFORMING ORGANIZATION NAME(S) AND ADDRESS(ES)UNIVERSITY OF SYDNEYL 6 JFR BUILDING G02 CITY RDUNIVERSITY OF SYDNEY, 2006 AU
8. PERFORMING ORGANIZATION REPORT NUMBER
9. SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES)AOARDUNIT 45002APO AP 96338-5002
10. SPONSOR/MONITOR'S ACRONYM(S)AFRL/AFOSR IOA
11. SPONSOR/MONITOR'S REPORT NUMBER(S)AFRL-AFOSR-JP-TR-2016-0087
12. DISTRIBUTION/AVAILABILITY STATEMENTA DISTRIBUTION UNLIMITED: PB Public Release
13. SUPPLEMENTARY NOTES
14. ABSTRACTThe primary objective is to explore a novel class microwave photonic (MWP) notch filter with a very narrow isolation bandwidth, an ultrahigh stopband rejection, a wide frequency tuning, and flexible bandwidth reconfigurability, integrated in a compact photonic chip.
15. SUBJECT TERMSElectro-optic Modulator, Microwave photonic filter, Nanophotonic devices, Reconfigurable RF Notch Filter
16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT
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18. NUMBER OF PAGES 15
19a. NAME OF RESPONSIBLE PERSONHONG, SENG
19b. TELEPHONE NUMBER (Include area code)315-229-3519
Standard Form 298 (Rev. 8/98)Prescribed by ANSI Std. Z39.18
Page 1 of 1FORM SF 298
10/26/2016https://livelink.ebs.afrl.af.mil/livelink/llisapi.dll
AOARD Grant FA2386-14-1-4030
David Marpaung and Benjamin J. Eggleton
CUDOS, School of Physics, The University of Sydney Australia
benjamin.eggleton@sydney.edu.au
Frequency Agile Microwave Photonic Notch Filter in a Photonic Chip
Final Report (performance period:
1. Problem statement:
Interference mitigation is crucial in modern radiofrequency (RF) communications systems with
dynamically changing operating frequencies, such as cognitive radios, modern military radar,
and electronic warfare (EW) systems. To protect sensitive RF receivers in these systems,
frequency agile RF filters that can remove interferers or jammers with large variations in
frequency, power, and bandwidth are critically sought for. Unfortunately, an RF band-stop or
notch filter that can simultaneously provide high resolution, high peak attenuation, large
frequency tuning, and bandwidth reconfigurability does not presently exist. Microwave
photonic (MWP) filters are capable of tens of gigahertz tuning and have advanced in terms of
performance, but most are limited in stopband rejection due to the challenge in creating a high
quality-factor optical resonance used as the optical filter. Thus, to achieve MWP filters with
similar performance to state-of-the-art RF filters in terms of isolation bandwidth and rejection
is still very challenging, especially in compact integrated photonic chip footprint.
2. Program objective:
The objective of this program is to achieve a novel class microwave photonic (MWP) notch
filter with a very narrow isolation bandwidth, an ultrahigh stopband rejection, a wide frequency
tuning, and flexible bandwidth reconfigurability, integrated in a compact photonic chip. Target
values to achieve are: 1-40 GHz frequency tuning, 10-100 MHz bandwidth tuning, >60 dB
peak suppression, and 0 dB passband insertion loss. The program will also deliver a
prototype of the high performance filter with computer-control capability of reconfiguring the
filter properties, such as center frequency, bandwidth, and suppression.
3. Approach:
The approach of the project to realize the high performance filter high performance is to exploit
stimulated Brillouin scattering (SBS) in a photonic chip as optical filtering technology,
combined with a new concept of RF sidebands amplitude and phase controls using an electro-
optic modulator to enhance the filter suppression through frequency selective interference.
The realization of this filter is explored in various fiber-based and photonic-chip based
platforms, including chalcogenide, silicon, silicon nitride, and standard single-mode fiber.
Utilization of the filter technology to another functionality, namely in an instantaneous
frequency measurement (IFM) system was also explored.
4. Results and discussions:
a. High extinction tunable notch filter in a chalcogenide chip [Optica 2, 76 (2015)]
Here, we demonstrate experimentally a highly selective SBS integrated microwave photonic
bandstop filter in a centimeter-scale chalcogenide glass waveguide that operates with a low
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pump power (8–12 mW) and a low SBS gain (1–4 dB), while maintaining high,
reconfigurable resolution (32–88 MHz) and high stopband rejection of >55 dB. We further
show that the filter can be tuned over a wide frequency range of 0–30 GHz (Figure 1a),
leading to a unique performance combination difficult to match with any existing filter
technology. We achieved this performance through on-chip SBS filtering of a phase- and
amplitude-tailored RF-modulated optical spectrum resulting in precise RF signal
cancellation at a resolution comparable to state-of-the- art RF filters.
We further demonstrate the first high resolution RF filtering experiment using the chip-based
MWP filter. We consider a scenario in which two RF signals, one of interest and the other
an unwanted interferer separated in frequency by 20 MHz, were supplied to the input of the
filter. We compare the output RF spectra from a conventional single-sideband MWP filter
Figure 2(b, upper) As expected the unwanted tone power was reduced by 17 dB, but the
signal attenuation was as high as 9 dB, which indicated that the conventional filter resolution
was below 20 MHz. This clearly demonstrates the limitation of the conventional approach,
which cannot simultaneously achieve high resolution and high-suppression filtering. In
contrast, this can be achieved using on-chip SBS filter, as shown in Figure 2(b, lower). The
measured interferer suppression in this case was 47 dB, limited by the noise floor of the
measurements.
This paper is in the top 1% highly cited paper of the academic field of Physics according to
Web of Science.
Figure 1. (a) 1-30 GHz frequency tuning of the on-chip SBS MWP filter. (b) High-resolution RF filtering
experiment. Two RF signals with 20 MHz frequency separation were used at the filter input. (upper)
Filtering with conventional single-sideband scheme with 17 dB SBS loss as optical filter. Peak
attenuation at the unwanted interferer tone was 17 dB, and signal attenuation was 9 dB. (lower)
Filtering with the cancellation filter using 4 dB of SBS gain. Complete reduction of unwanted interferer
was observed with low attenuation of the desired signal (2 dB).
b. Tunable SBS notch filter in a silicon chip [Optics Letters 40, 4154 (2015)]
Microwave photonic filters based on SBS have shown excellent properties in terms of high
resolution and extinction. Although efficiently generated in soft glasses such as
chalcogenides, there is a strong demand to harness SBS in silicon, a material platform
that supports large scale integration between photonics and electronics. Unfortunately, for
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the CMOS-compatible silicon-on-insulator (SOI) platform, SBS has been elusive. The low
elastic mismatch between the silicon core and the silicon dioxide substrate result in weak
acoustic confinement, preventing build-up of the SBS process. A recent breakthrough
achieved forward propagating SBS (FSBS) in a silicon nanowire by partially releasing the
nanowire from its substrate. However, the amount of SBS gain that was reported, including
this geometrical enhancement and novel fabrication methodology, was limited to around
4 dB, which is hardly usable for conventional signal processing applications.
In this work, we report the first functional device for signal processing based on SBS from
a silicon nanowire. We employ a novel cancellation filter technique to harness this modest
SBS gain in silicon, creating a high-performance microwave photonic notch filter (Figure
2a). We use only 0.98 dB of on-chip SBS gain to create a cancellation microwave photonic
notch filter with 48 dB of suppression, 98 MHz linewidth (Figure 2b), and 6 GHz frequency
tuning (Figure 2c). This demonstration establishes the path toward monolithic integration
of high-performance SBS microwave photonic filters in a CMOS-compatible platform such
as SOI.
Figure 2. (a) Setup of the notch filter experiment. DPMZM, dual-parallel Mach–Zehnder modulator;
PD, photodetector. The top right shows the simulated transversal acoustic displacement, or forward
SBS, from a silicon nanowire. (b) Measured RF notch filter response at 15.72 GHz. (c) Filter
frequency tuning where the suppression was kept above 48 dB in all measurements.
c. Long term stability enhancement of SBS notch filter [Optics Express 23, 2378
(2015)]
Microwave photonic cancellation notch filters have been shown capable of achieving ultra-
high suppressions independently from the strength of optical resonant filter they use,
making them an attractive candidate for on-chip signal processing. Their operation, based
on destructive interference in the electrical domain, requires precise control of the phase
and amplitude of the optical modulation sidebands. To date, this was attainable only
through the use of dual-parallel Mach-Zehnder modulators (Figure 3a) which suffer from
bias drifts that prevent stable filter operation. Here we propose a new cancellation filter
topology with ease of control and enhanced stability using a bias-free phase modulator
and a reconfigurable optical processor (implemented using a Fourier-Domain Optical
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Processor) as the modulation sidebands spectral shaper (Figure 3b). We experimentally
verify the long term stability of the novel filter topology through continuous real-time
monitoring of the filter peak suppression over 24 hours (Figure 3c).
Compared to previous demonstrations, where a DPMZM was used for the sideband
tailoring, the new implementation exhibited far greater stability, due to the elimination of
the modulator biasing. Furthermore, the use of a Fourier-Domain Optical Processor
allowed independent control over the phase and amplitude of the sidebands, greatly
reducing system complexity. This enabled the realization of a simple algorithm for
controlling the filter suppression, and resulted in the first demonstration of a MWP notch
filter with high 40 dB suppression, over a long 24-hour period.
Figure 3. (a) Structure of a MWP cancellation notch filter, with DPMZM used for tailoring the
sidebands’ spectra. At the input of the DPMZM, an RF hybrid coupler is used to split the input RF
signal between the two arms of the modulator. (b) Structure of a MWP cancellation notch filter, with
a Fourier-domain optical processor (FD-OP) used for tailoring the sidebands’ spectra. The enhanced
functionality of the FD-OP means that the DPMZM can be replaced with a simple bias-free phase
modulator. (c) Measurement of the notch filter suppression over a 24 period of continuous operation.
The three plots denote different methods for tailoring the sidebands’ spectra.
d. High resolution microwave frequency measurement with on-chip SBS [Optica 3, 30
(2016)]
The high extinction cancellation notch filter reported earlier can be implemented in an
instantaneous frequency measurement system (IFM). IFM systems estimates an unknown
microwave frequencies through indirect measurement, for example through power well
calibrated power measurements. These systems are useful as alternatives to direct
spectrum analysis, which can be heavy, complicated and limited in the frequency range.
In this work, we demonstrate experimentally a frequency measurement system that
simultaneously achieves the estimation of multiple frequency measurement up to 38 GHz
with errors lower than 1 MHz in a centimeter-scale chalcogenide glass waveguide. Our
approach circumvents the fundamental trade-off between measurement range and
accuracy. Its channelized frequency band offers an inherent capability to resolve and
process multiple simultaneous RF inputs over a wide spectrum, provided the separation
between multiple microwave frequencies is larger than the channel frequency spacing.
The enabling technology for this breakthrough is the recently reported microwave photonic
filter based on a very narrow linewidth and high extinction of SBS (Figure 4a). The results
presented here point to new possibilities for creating a high-performance integrated on-
chip IFM system that will help assure critical mission success at minimal costs and
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enhanced security for manned and/or unmanned aircraft and surface vessels and next-
generation radar, with potential for monolithic integration in silicon chips.
Figure 4. (a) Simplified principle of the SBS notch filter-based IFM system. The notch filter amplifies
frequency changes within the notch bandwidth to a large frequency difference, essentially allowing a
high slope and low frequency estimation error. (b) Measured frequency estimated errors of an RF
signal in the range of 9–38 GHz; the error is less than ±1 MHz.
e. Giant Brillouin gain in a photonic chip [Journal of Lightwave Technology,
accepted]
The photon-phonon interaction in SBS has been harnessed to demonstrate various on-
chip functionalities such as narrowband microwave bandpass filters, notch filter, delay
lines, and phase shifters. However, the performance of most of the functionalities in
integrated devices have been limited by the available on-chip gain. A platform of choice
for on-chip SBS is a chalcogenide, As2S3 and has previously exhibited a gain of up to 23
dB. For comparison tens of dBs of gain is readily achievable in kilometers of silica fiber.
However, it is worth noting that the length of integrated SBS circuits is orders of magnitude
lower than that of fibers, thus providing a high gain/length ratio, critical for photonic
integration. In this paper, we present an optimized design and fabrication procedure for
our photonic chip which resulted in an on-chip gain of up to 52 dB which is an almost 1000
times improvement over previous results. Crucially, these results were achieved through
fabrication improvements led to enhanced power handling of the devices and propagation
losses of 0.5 dB/cm, allowing for long propagation lengths of 13-cm and 23-cm (fabricated
in the form of spirals), resulting in effective lengths of 6.5 cm and 8 cm, respectively.
The SBS gain was characterized using a high-resolution pump-probe setup. The results
are shown in Figure 5, where the probe ON-OFF gain in decibels is plotted with respect
to the on-chip power for the two different lengths of the waveguides (Fig. 5a). A 52 dB gain
shown in Figure 4 was realized from the 23-cm at a frequency offset of 7.6 GHz (the
Brillouin shift, ΩB) from the pump frequency. The 3-dB linewidth was measured to 10 MHz
(Fig. 5b).
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Figure 5. (a) The on-chip probe gain vs. pump power for a 23-cm and 13-cm-long chalcogenide
waveguide exhibiting giant Brillouin gain. (b) The measured RF spectrum for a 23-cm-long
waveguide exhibiting a gain of 52 dB. Red- experimental data, Black-Lorentzian fit.
f. Reconfigurable on-chip bandpass filter [Optics Letters 41,436 (2016)
The giant Brillouin gain in the photonic chip can be harnessed for a number of important
applications that require bandwidth larger than the typical width of an SBS resonance (i.e.
30 MHz). In this work, we achieve a microwave photonic bandpass filter with a flat pass
band, sharp edges, and a near rectangular shape. These features can be achieved by
tailoring the SBS gain spectrum using multiple electrical lines generated from an arbitrary
waveform generator (AWG) to modulate the pump using an electro-optic modulator. The
giant on-chip Brillouin gain of 44 dB was harnessed to create a bandpass filter with tailored
bandwidth from 30 MHz up to as high as 440 MHz (Figure 6a), which is more than an
order of magnitude improvement over previous results. The filter passband ripple was
maintained at <1.9 dB during operation by employing an iterative feedback loop. The
central frequency of the filter was tuned up to 30 GHz, while maintaining its passband
frequency response, which is a clear benefit over electronic filters (Figure 6b).
Figure 6. (a) Bandwidth reconfigurability of the MPF. By tailoring the pump, the bandwidth can be
tuned from 30 MHz to 440 MHz. (b) Left axis: the 3-dB bandwidth (circle) and the 10-dB
bandwidth (square) of the MPF as a function of central frequency; right axis: passband ripple of
the MPF (triangle) as a function of central frequency.
g. Signal interference RF photonic bandstop filter [Optics Express 24, 14995 (2016)]
Tailoring the SBS gain can also be harnessed for creating high extinction bandstop filters.
We report the microwave photonic implementation of a signal interference bandstop filter,
which are filters with high extinction and wide stopbands achieved through destructive
interference of two signals. We implement this concept through the combination of precise
synthesis of stimulated Brillouin scattering (SBS) loss with advanced phase and amplitude
tailoring of RF modulation sidebands. We achieve a square-shaped, 20-dB extinction RF
photonic filter over a tunable bandwidth of up to 1 GHz with a central frequency tuning
range of 16 GHz using a low SBS loss of ~3 dB. Wideband destructive interference in this
novel filter leads to the decoupling of the filter suppression from its bandwidth and shape
factor. The principle of operation of the filter is depicted in Figure 7a. Key to this filter is
precise amplitude and phase matching over a broad bandwidth to achieve broadband
cancellation. The resulting filter profile, tuned in bandwidth from 0.013 GHz to 1 GHz is
shown in Figure 7b.
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Figure 7. (a) The simplified setup and principle of operation of the reconfigurable and square-
shaped bandstop MWP filter based on the signal interference technique. (I) and (II) are the phase
modulated signals of two optical carriers filtered using a demultiplexer. (III) is the tailored SBS pump
operating at the frequency ωpn (where n is the number of the pump line) to achieve a broadened
SBS profile. (IV) Amplitude matching and phase engineering of both sidebands to fulfil the
cancellation condition. (V) Destructive interference of the sidebands with the corresponding carriers
at the photodetector resulting in a bandstop response over the SBS profile. (b) Bandwidth
reconfigurability of the bandstop filters from 0.013 to 1 GHz.
h. Lossless microwave photonic filter [Optics Letters, accepted]
We have demonstrated a new class of RF photonic filters based on frequency-selective
RF interference which can decouple the filter peak suppression and bandwidth resolution
Implementation of this RF interference filter using SBS led to several distinct advantages
including ultra-high suppression and high resolution while maintaining a wide frequency
tuning. However, these filters are based on RF signal cancellation that occurs across the
whole spectrum, leading to unwanted additional loss of signals in the passband, which
can degrade the filter signal-to-noise ratio (SNR) performance. In this work, we introduce
a lossless and versatile RF photonic filter based on the selective RF interference
technique, using the combination of an integrated silicon nitride ring resonator and SBS
gain in an optical fiber (Figure 8a). The key to this breakthrough is the unique phase
response of an optical ring resonator in the over-coupled (OC) regime that provides a π
phase-inversion, which is necessary to achieve destructive interference and high isolation
only at the intended stopband frequency. In contrast, signals are able to interfere
constructively in the filter passband, providing gain for the RF signal rather than loss
induced by signal cancellation.
With this technique, we experimentally demonstrate RF photonic notch and bandstop
filters with no insertion loss and 1-11 GHz central frequency dynamic tuning range. The
notch filter has a 60 MHz resolution and >55 dB suppression, while the bandstop filter has
a nearly square stopband with >30 dB suppression, and a reconfigurable 3-dB bandwidth
of 100-220 MHz (Figure 8b).
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Figure 8. (a) Schematic of the experimental setup. IM, Intensity Modulator. EDFA: Erbium-Doped
Fiber Amplifier. PC: Polarization Controller. PD, Photodetector. VNA: Network Analyzer. Qualitative
optical spectra denoted by red points are shown above the setup diagram. (b) Measured spectra
of the MWP bandstop filters with several values of 3-dB bandwidths.
i. Computer-programmable microwave photonic notch filter [hardware prototype]
A computer-controlled tunable notch filter prototype was built in this project. The
photograph of the prototype is shown in Figure 9. The prototype hosted a number of
components including two integrated tunable laser assemblies (ITLAs) that acted as the
SBS pump and probe lasers. The maximum output power of these lasers are 15 dBm. The
modulator used in the prototype is a 40 GHz phase modulator. The SBS medium used is
a 1 km standard single mode fiber spooled in a small form factor. The pump and probe
signal levels can be controlled using electrical and manual variable optical attenuators
(VOA). A micro-EDFA is used to boost signal level prior to photo-detection. A high power-
handling detector with 50 mA output current is used to low RF insertion loss can be
achieved. All electrical power supplies for the lasers, EDFA, photodetector, VOA, cooling
system (fan), and USB communications are hosted inside the prototype enclosure.
Figure 9. Photograph of the RF photonic tunable notch filter prototype created in this project,
showing the components at the top of the enclosure. The prototype is hosted in an enclosure with
a dimension of 28cm x 30cm x 10cm. The ITLAs, modulator, detector, and the SBS fiber medium
are located at the bottom of the enclosure.
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The filter can operate with two modes; namely with the internal phase modulator in
conjunction with a Fourier-domain optical processor (a Finisar Waveshaper), or with an
external dual-parallel Mach-Zehnder modulator (DPMZM) as outlined in the publication
[Optics Express 23, 2378 (2015)]. Internal reconfiguration of the optical connections
should be made to switch between these two modes of operation.
The filter can be controlled and programmed through software. The communication
between the prototype and the computer is done through USBs. The control software is
written in LabVIEW and the screen-shot of the graphical user interface (GUI) of this
software is depicted in Figure 10.
Figure 10. The graphical user interface (GUI) of the filter prototype. The software controls all critical
components of the filter, including the pump and probe lasers, the Fourier-domain optical processor
(Finisar Waveshaper), the VOA to control the pump power, and a network analyzer (Agilent
Fieldfox) for data acquisition.
Preliminary characterizations have been carried out for the prototype. The result of notch
filters with at two extreme bandwidths are shown in Figure 11. The bandwidth can be
tuned from 20 MHz to 46 MHz. The typical insertion loss of the filter is -14 dB.
We characterize the long term stability of the notch frequency and suppression, in the
mode of operation using the Fourier-domain optical processor. The results are shown in
Figure 12. The frequency stability is of the order of 50 MHz, which is limited by the
frequency noise and stability of the ITLAs. As a comparison, using external cavity laser,
notch stability the order of 10 MHz can be expected. The notch suppression on the other
hand can be maintained higher than 20 dB over a long period (15 hours experiment). This
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suppression can be maintained at higher level if active stabilization is employed, as shown
previously in [Optics Express 23, 2378 (2015)].
Figure 11. The RF transmission of the notch filter measured using vector network analyzer. (a) A
notch formed using 7.8 dB of SBS gain, exhibiting 55 dB rejection, -14.5 dB insertion loss, and a
highest resolution of 20 MHz. (b) A notch formed using 7.7 dB of SBS loss, exhibiting 55 dB of
rejection, -24.5 dB insertion loss and a resolution of 46 MHz.
Figure 12. Long term stability of the notch filter prototype. (a) Notch frequency stability is of the
order of 50 MHz. (b) The suppression can be maintained above 20 dB over 16 hours period without
any active stabilization.
The specifications of the prototype are summarized in the table below:
Specification Value
Dimension L= 28 cm, W = 30 cm, H = 10 cm
Central frequency tuning 0.5-20 GHz
Rejection 55 dB (max), 20 dB (typical)
3-dB width 20-46 MHz (continuously tunable)
Passband insertion loss -14 dB (min)
Frequency stability 50 MHz
RF connectors 2.92 mm female
Optical connectors 2 x FC/APC; 1x FC/PC
Supply 220 V
Communications USB
Software operation LabVIEW
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Currently there is an on-gong plan to commercialize this unique tunable filter technology through
CUDOS startup Luxava Technologies. In the coming months demonstrations of the filter are
planned for research laboratories and defense organization in Australia, as well as exhibiting in
major optical and microwave conferences (IMS, CLEO, IEEE MWP).
Published journal papers with AOARD acknowledgement
1. A. Choudhary, B. Morrison, I. Aryanfar, S. Shahnia, M. Pagani, Y. Liu, K. Vu, S. J. Madden,
D. Marpaung, and B. J. Eggleton "Advanced integrated microwave photonic signal
processing with giant on-chip Brillouin gain", Journal of Lightwave Technology
(accepted, 2016) [invited paper]
2. Y. Liu, D. Marpaung, A. Choudhary, and B. J. Eggleton "A lossless and high resolution RF
photonic filter", Optics Letters (accepted, 2016)
3. I. Aryanfar, A. Choudhary, S. Shahnia, M. Pagani, Y. Liu, K. Vu, S. J. Madden, B. Luther-
Davies, D. Marpaung, and B. J. Eggleton "Signal interference RF photonic bandstop filter",
Optics Express 24, 14995 (2016)
4. H. Y. Jiang, D. Marpaung, M. Pagani, K. Vhu, D.Y. Choi, S. Madden, L. S. Yan, and B. J.
Eggleton, " High resolution, multiple frequencies microwave measurement using an on chip
tunable Brillouin RF photonic filter", Optica 3, 30 (2016)
5. A. Choudhary, I. Aryanfar, S. Shahnia, B. Morrison, K. Vu, S. Madden, B. Luther Davies,
D. Marpaung, and B. J. Eggleton, " Tailoring of the Brillouin gain for on-chip widely tunable
and reconfigurable broadband microwave photonic filters", Optics Letters 41,436 (2016)
6. S. Shania, M. Pagani, B. Morrison, B. J. Eggleton, and D. Marpaung, " Independent
manipulation of the phase and amplitude of optical sidebands in a highly-stable RF photonic
filter", Optics Express 23, 2378 (2015)
7. A. Casas-Bedoya, B. Morrison, M. Pagani, D. Marpaung, and B. J. Eggleton, " Tunable
narrowband microwave photonic filter created by stimulated Brillouin scattering from a
Silicon nanowire", Optics Letters 40, 4154 (2015)
8. D. Marpaung, B. Morrison, M. Pagani, D.-Y. Choi, B. Luther-Davies, S.J. Madden, and B.J.
Eggleton, "Low power, chip-based stimulated Brillouin scattering microwave photonic filter
with ultrahigh selectivity," Optica 2, 76 (2015).
Published papers funded by cost Sharing/other sources but related to AOARD grant
9. M. Merklein, A. Casas-Bedoya, D. Marpaung, T.F.S. Buettner, M. Pagani, B. Morrison,
I.V. Kabakova, and B. J. Eggleton, " Stimulated Brillouin scattering in photonic integrated
circuits: novel applications and devices", IEEE Journal of Selected Topics in Quantum
Electronics (2016) [invited paper]
10. B. Morrison, Y. Zhang, M. Pagani, B. J. Eggleton, and D. Marpaung "Four wave mixing
and nonlinear losses in thick silicon waveguides", Optics Letters 41,2418 (2016)
11. M. Pagani, , B. Morrison, Y. Zhang, A.Casas-Bedoya, T. Aalto, M. Harjanne, M.
Kapulainen, B. J. Eggleton, and D. Marpaung, " Low-error and broadband microwave
frequency measurement in a silicon chip", Optica 2, 751 (2015)
12. M. Pagani, D. D. Marpaung-Y. Choi, S.J. Madden, B. Luther-Davies, and B.J. Eggleton,
"Tunable wideband microwave photonic phase shifter using on-chip stimulated Brillouin
scattering," Optics Express 22,28810 (2014)
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13. D. Marpaung, M. Pagani, B. Morrison, and B.J. Eggleton, "Nonlinear integrated
microwave photonics", Journal of Lightwave Technology 32,3421 (2014) [invited
paper]
14. D. Marpaung, M. Pagani, B. Morrison, R. Pant, and B.J. Eggleton "Ultra-high suppression
microwave photonic bandstop filters", Chinese Science Bulletin 59, 2684 (2014)
[invited paper]
15. R. Pant, D. Marpaung, I.V. Kabakova, B. Morrison, C.G. Poulton, and B. J. Eggleton "On
chip stimulated Brillouin Scattering for microwave signal processing and generation",
Laser and Photonics Reviews 8, 653 (2014) [invited paper]
Conference paper/poster/presentation funded by AOARD grant
1. Choudhary, A., Aryanfar, I., Shahnia, S., Morrison, B., Vu, K., Madden, S., Luther-Davies,
B., D. Marpaung, Eggleton, B. (2016). On-chip tunable microwave photonic filters with a
reconfigurable bandwidth of up to 440 MHz. Optical Fiber Communication Conference
2016, Anaheim.
2. A. Choudhary, I. Aryanfar, S. Shahnia, B. Morrison, K. Vu, S. Madden, B. Luther-Davies,
D. Marpaung, B. J. Eggleton, "On-chip broadband RF photonic filters using giant Brillouin
gain," ANZCOP, Adelaide, Australia, 2015 [postdeadline paper]
3. Pagani, M., Shahnia, S., Morrison, B., Eggleton, B., D. Marpaung (2015). Highly-stable
RF photonic cancellation filter. 2015 IEEE International Topical Meeting on Microwave
Photonics (MWP 2015), USA.
4. Jiang, H., D. Marpaung, Pagani, M., Yan, L., Eggleton, B. (2015). Multiple frequencies
microwave measurement using a tunable Brillouin RF photonic filter. 11th Conference on
Lasers and Electro-Optics Pacific Rim (CLEO-PR 2015), Washington DC: OSA (Optical
Society America).
5. Casas Bedoya, A., Morrison, B., Pagani, M., D. Marpaung, Eggleton, B. (2015). CMOS-
compatible RF notch filter enabled by SBS in silicon. Nonlinear Optics (NLO 2015),
Kauai: OSA (Optical Society America). [postdeadline paper]
6. Casas Bedoya, A., Morrison, B., Pagani, M., D. Marpaung, Eggleton, B. (2015). Ultra-
narrowband tunable microwave filter created by stimulated Brillouin scattering in a Silicon
chip. Frontiers in Optics 2015: The 99th OSA Annual Meeting and Exhibit/Laser
Science XXXI, Washington: The Optical Society.
Invited talks
1. B. Eggleton Asia Communications and Photonic Conference, “Stimulated Brillouin
Scattering in Photonic Integrated Circuits for Signal Processing,” November 2016,
Wuhan, China.
2. B. Eggleton, IEEE Photonics Conference 2016, “Harnessing photon-phonon
interactions in circuits”, October 2016, Hawaii, USA
3. B. Eggleton, SPIE Photonics West, “Enhancing and inhibiting stimulated Brillouin
scattering on photonic integrated circuits” [9371-10], 9 February 2015, San Francisco,
USA.
4. B. Eggleton, Nonlinear Optics (NLO), “Enhancing and Inhibiting Stimulated Brillouin
Scattering in Photonic Integrated Circuits” [NF1A.1], 31 July 2015, Kauai, USA.
DISTRIBUTION A. Approved for public release: distribution unlimited.
5. B. Eggleton, 10th International Symposium on Modern Optics and Its Applications
(ISMOA) 2015, “Stimulated Brillouin Scattering in Photonics Integrated circuits: 11 August
2015, Bandung, Indonesia.
6. D. Marpaung, Optical Fiber Communication Conference and Exposition (OFC) 2016,
20-24 March 2016
7. D. Marpaung, European conference on optical communications (ECOC). “Integrated
microwave photonics”, 27 Sept 2015
8. D. Marpaung, CLEO Pacific Rim 2015, “Material platforms for integrated microwave
photonics”, 24 August 2015
9. D. Marpaung, Integrated photonic research symposium (IPR 2015), “Energy efficient
RF photonic signal processing with on-chip SBS”, 27 June 2015
Received additional fund for your research efforts related to AOARD grant
1. Stimulated Brillouin Scattering in semiconductor devices, AUD 552,000, 2016-2018
2. Smart radio-frequency filter in a tuneable optical circuit, AUD 357,000, 2015-2017
3. Ultra-portable and Programmable Microwave Photonic Filter, AUD 35,000, 2015-2016
IP disclosure/Patent/Patent submitted (title, date submitted):
1. D. Marpaung, M. Pagani and S. Shahnia, "High stability microwave photonic notch filter,"
Provisional patent, CDIP Ref. #2015-035-PRO-0 (2015)
Visited AFRL/DoD installation in US, including under AOARD WoS program
1. US Army Research Laboratory, Adelphi, MD, 28 October 2015 (Dr. A. Casas Bedoya)
2. DARPA, Arlington,VA, 2015 (B. Eggleton)
3. US Army Research Laboratory, Adelphi, MD, 2015 (B. Eggleton)
4. DARPA Arlington, VA, February 2016 (B. Eggleton)
5. NRL, Washington DC, February 2016 (B. Eggleton)
6. US Army Research Laboratory, Adelphi, MD, February 2016 (B. Eggleton)
Collaborations
1. ARL: Dr. Weimin Zhou, CRADA, Technical data exchange on silicon photonics
2. AFRL Materials Directorate: Dr. Rob Nelson
3. AFRL Sensors Directorate: Dr. Nick Useshak
4. AFRL AFOSR: Dr. Gernot Pomrenke on CSP support on Workshop on Optomechanics
and Brillouin Scattering (WOMBAT 2015)
5. NRL: Dr. Craig Hoffman and his group
6. NRL: Dr. Jason McKinney
7. NRL: Dr. Keith Williams.
8. Stanford University: Prof. Shanhui Fan
9. University of Michigan: Prof. Herbert Winful
10. University of Massachusetts at Boston: Prof. Richard Soref
11. ORC Southampton: Prof. Graham Reed and Prof. Anna Peacock
12. Macquarie University: Prof. Mike Steel
13. Ghent University and IMEC: Prof. Roel Baets
14. University Technology Sydney: A/Prof. Chris Poulton
15. Australian National University: A/Prof. Steve Madden
DISTRIBUTION A. Approved for public release: distribution unlimited.
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