experimental details 1. plasma assisted molecular beam epitaxy (n=1, 2, and 4) of p-gan/n-gan...
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EXPERIMENTAL DETAILS
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plasma assisted molecular beam epitaxy
(N=1, 2, and 4) of p-GaN/n-GaN junction diodes
top and bottom of this structure are both n-type since the tunnel junction eliminates the need for a top p-contact.
The device was processed using contact lithography
mesa isolation was done using Cl2/BCl3 etching
ohmic contacts were made using Al/Au
Size 100
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As the p-n junction is forward biased, the tunnel junction gets reverse biased
electrons of p+GaN layer of the tunnel junction tunnel into empty states available in the n+GaN layer , leaving behind a hole in the p+GaN layer.
These electrons and holes regenerated at p+and n+side of the tunnel junctions
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