experimental details 1. plasma assisted molecular beam epitaxy (n=1, 2, and 4) of p-gan/n-gan...

EXPERIMENTAL DETAILS 1

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EXPERIMENTAL DETAILS

plasma assisted molecular beam epitaxy

(N=1, 2, and 4) of p-GaN/n-GaN junction diodes

top and bottom of this structure are both n-type since the tunnel junction eliminates the need for a top p-contact.

The device was processed using contact lithography

mesa isolation was done using Cl2/BCl3 etching

ohmic contacts were made using Al/Au

Size 100

Page 3: EXPERIMENTAL DETAILS 1. plasma assisted molecular beam epitaxy (N=1, 2, and 4) of p-GaN/n-GaN junction diodes top and bottom of this structure are both

As the p-n junction is forward biased, the tunnel junction gets reverse biased

electrons of p+GaN layer of the tunnel junction tunnel into empty states available in the n+GaN layer , leaving behind a hole in the p+GaN layer.

These electrons and holes regenerated at p+and n+side of the tunnel junctions

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