itrs information – not for distribution april 11, 2005 itwg1 technical issues for the future...
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April 11, 2005 ITWG 1
ITRS Information – Not for distribution
Technical issues for the future Silicon Wafers
*Kiyoshi Takada: Shin-Etsu Handotai Co., Ltd.
(a former SSi General Manager)
Masato Imai: Komatsu Electronic Metals Co., Ltd.
(a former SSi Epitaxial Dept. Manager)
Nobuyuki Hayashi: Sumitomo Mitsubishi Silicon Corp.
(SSi Administration Dept., General Manager)
April 11, 2005 ITWG 2
ITRS Information – Not for distribution
Contents of presentation
Q1. Why was the SSi consortium formed? Why was 400mm studied?
Q2. What have been the SSi main technical success?
Q3. How is the intellectual property rights performance going on?
Q4. What are the key points for sending Technical Information to the Next Wafer Diameter?
April 11, 2005 ITWG 3
ITRS Information – Not for distribution
Q1. Why was the SSi consortium formed ?
S = Super = Super Heavy and Large+
Si = Silicon itself
SSi
April 11, 2005 ITWG 4
ITRS Information – Not for distribution
Q1. Why was 400mm studied?
(Quotation from the regime of SELETE at 1996)
At the SSi establishment, it was a general agreement in the semiconductor industry that the next generation of 300mm was 400mm.
April 11, 2005 ITWG 5
ITRS Information – Not for distribution
Q2. What have been the SSi main technical success?
A2.
1) Monster CZ crystal pulling furnace by SSi original design.
(Verification of “Maruyama Patent”, Cusp typed MCZ, etc.)
2) Wafer shaping process by SSi original Grinding Machines.
(High flatness grinding technology in the lapping-less and etching-less process)
3) Low temperature Epitaxial growth by SSi original design.
(Highly uniform growth of the super thin layer)
April 11, 2005 ITWG 6
ITRS Information – Not for distribution
World largest CZ crystal pulling furnace
Furnace Height: 12 m Weight: 36 ton Hot zone: 40 inch Cusp-type super conductive magnetCrystal Diameter: 400 mm Weight: over 400 kg Body length: over 1m
April 11, 2005 ITWG 7
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Crystal Supporting System
Schematic drawing of built-in systemin SSi furnace M. Maruyama: Patent No. 1851653
April 11, 2005 ITWG 8
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The world’s first Si single crystal weighing more than 400Kg in a 400mm diam
eter
400mm Si single crystal, which has a straight length of 110cm and a total weight of 411kg, is shown in contrast with normal 200mm crystal.
April 11, 2005 ITWG 9
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Simplified wafer shaping process by Grinding Technology
Schematic view of Ductile Mode Double Disk Grinding (DDG) Machine for Super-Large and Super-Flat Silicon wafer.
Trigonal Prism type Pentahedral Structure
*Bed and base columns are cast as one component
Deionized water type Linear actuator
Bed
Twin double V guide ways
Base column
Four Trigonal Braces Top column
Deionized water type hydraulic grinding spindle
Silicon wafer Saddle
Grinding wheel
April 11, 2005 ITWG 10
ITRS Information – Not for distribution
SEM photograph of cutting chip
300 nmBy the extremely high stiffness , motion accuracy, feeding resolution and fine mesh grinding wheel, a portion of Ductile-mode grinding was searched.
April 11, 2005 ITWG 11
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Q3. How is the intellectual property rights performance going
on?
A3. Gas inlet nozzle
Heater
Gas exhaust nozzle
Heater cover
Holder supportRotation table
Wafer support
Gas inlet nozzle
Heater
Gas exhaust nozzle
Heater cover
Holder supportRotation table
Wafer support
Among the many patents of SSi, the basic patents of Epi reactor are licensed to Tera Semicon (Korea).
April 11, 2005 ITWG 12
ITRS Information – Not for distribution
Results of 400mm epitaxial wafers
Distance from wafer center, (mm)
Thi
ckne
ss, (
µm
)
0
1
2
3
4
5
-100 0 100 200-200
± 3%± 11%± 22%± 31%
Thickness deviation
Distance from wafer center, (mm)
Thi
ckne
ss, (
µm
)
0
1
2
3
4
5
-100 0 100 200-200
± 3%± 11%± 22%± 31%
Thickness deviation
Distance from wafer center, (mm)
Thi
ckne
ss, (
µm
)
0
1
2
3
4
5
-100 0 100 200-200
± 3%± 11%± 22%± 31%
Thickness deviation
0
1
2
3
4
5
-100 0 100 200-200
± 3%± 11%± 22%± 31%
Thickness deviation
± 3%± 11%± 22%± 31%
Thickness deviation
1014
1015
1016
1017
1018
1019
1020
0.5 1.0 1.5 2.0
T.W.=0.1 µm
Epitaxial layer
Depth, (µm)
Bor
on c
onc.
, (at
oms/
cm3 )
1014
1015
1016
1017
1018
1019
1020
0.5 1.0 1.5 2.0
T.W.=0.1 µm
Epitaxial layer
Depth, (µm)
Bor
on c
onc.
, (at
oms/
cm3 )
Note that the thickness distributions change drastically depending on the gas flow rate adjustment of each inlet nozzle. Thickness uniformity commensurate with industrial levels has been achieved. The transition width of 0.1m is a very steep one compared to that of approximately 0.5m for wafers grown by conventional SiHCl3 process.
April 11, 2005 ITWG 13
ITRS Information – Not for distribution
Q4. What are the key points for sending Technical Information to the Next Wafer
Diameter ?A4.
Ο SSi information will be much effective.Δ Some of SSi information will be suggestive.Χ New technology should be searched.
Remarks:
ΟNano-Metrology System measuring the price detection of wafer shape.
ΧDefect & Particle Detection Technology.Metrology
ΟEpitaxial Furnace Design with the intention of Cost reduction.
Ο ~ ΔLow Temperature Epitaxial Growth Technology.Epitaxial Growth
ΧHigh purity cleaning technology.
Ο ~ ΔSimplified Wafer Shaping process by Grinding Technologies with Ductile -mode.
Wafer Shaping
ΟFurnace system concept including MCZ, Crystal Suspending system, Larger Quartz Crucible, Safety system, etc.
Δ ~ ΧStandardization of Numerical Simulation and Thermal Properties.Crystal Growth
RemarksTechnological IssuesField
April 11, 2005 ITWG 14
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Commercial Viability for Next Diameter crystal growth is
questionable
1) Additional technologies such as Monster Puller installation with MCZ, giant Quartz Crucible, Suspending System,Remote Control,
etc. will be needed. ⇒Higher cost 2) Productivity together with slower growth rate will drastically fall down.
⇒ Higher cost 3) Unusable Si materials such as shoulder, tail, residue, etc. will increase. φ400mm φ200mm ⇒Higher cost
Weight loss >30% 10%
April 11, 2005 ITWG 15
ITRS Information – Not for distribution
Concluding Remarks
1. SSi’s activity was a milestone to adapt our concept and/or strategy to the new circumstance.
2. SSi patents and know-how would be promised to improve the 300mm Si production and to the next generation wafer.
3. However, the fulfillment of the next wafer would be questionable without Devices, Equipment, Materials and Wafer each makers’ concrete cooperation and appropriate sharing of monster investment in advance.
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