mems在射頻無線通訊上的應用 -...

6

MEMS

/

(RF-MEMS)

(RF-MEMS) IC

(Resonator)(Oscillator)(Filter)(Mixer)(Switch)(Antenna)

Q

IC

(Integration) IC

IC MEMS

1

IC

(Interdisciplinary Fields)

RF-MEMS

7

Q (High-Q Passives) 1 (Discrete Components)

(Wireless Transceivers) Q

()

(RF) (IF) (Frequency Selection) (Frequency Generation)(Timing Reference) Q (Discrete)(Ceramic Filters)(SAW Filters)(Quartz Crystals)FBAR (Film Bulk Acoustic Resonator Filters)(Interface Circuits)(Packaging)(Assembling)

Superheterodyne [1] 2 (a)( Q )

I

Q

IQOsc.

QuartzXstal

IFAmp

SAWIF FilterMixer

SAWRF Filter

90

QuartzXstal

VCO

ChannelSelect PLL

LNACeramicRF Filter

Antenna

Tunable Off-ChipLC Tank

Off-ChipComponent

I

Q

IQOsc.

QuartzXstal

IFAmp

SAWIF FilterMixer

SAWRF Filter

90

QuartzXstal

VCO

ChannelSelect PLL

LNACeramicRF Filter

Antenna

Tunable Off-ChipLC Tank

Off-ChipComponent

(a)

Off-ChipComponent

Rx Out Q

FrequencySynthesizer

LNA

Antenna

AGC

LPF

LPF

Rx Out I

MixerSAW

RF Filter

LowpassFilter

LowpassFilter

2

Amp

2

0 90

0 90

0 90

Amp

MixerLNASAW

RF FilterSwitch Amp AGC Amp

QuartzXstal

Off-ChipComponent

Rx Out Q

FrequencySynthesizer

LNA

Antenna

AGC

LPF

LPF

Rx Out I

MixerSAW

RF Filter

LowpassFilter

LowpassFilter

2

Amp

2

0 90

0 90

0 90

Amp

MixerLNASAW

RF FilterSwitch Amp AGC Amp

QuartzXstal

(b)

(N+1)/N

Duplexer

RF BPF

RF BPF

RF BPF

Duplexer

Duplexer

LNA RF BPFFrom TX

LNA

LNA

LNA

LNA

LNA

From TX

From TX

RF BPF

0

090

90

I

QI

Q

RF BPF

GSM 900

PCS 1900

DCS 1800

AntennaCDMA

WCDMA

CDMA-2000 Tank

RXRF Channel Select PLL

RXRF LOXstalOsc

AGC

AGC

A/D I

A/D Q

(N+1)/N

Duplexer

RF BPF

RF BPF

RF BPF

Duplexer

Duplexer

LNA RF BPFFrom TX

LNA

LNA

LNA

LNA

LNA

From TX

From TX

RF BPF

0

090

90

I

QI

Q

RF BPF

GSM 900

PCS 1900

DCS 1800

AntennaCDMA

WCDMA

CDMA-2000 TankTank

RXRF Channel Select PLL

RXRF LOXstalOsc

AGC

AGC

A/D I

A/D Q

(c)

2

(a)(Superheterodyne Architecture)

(b)(Direct-Conversion Architecture)

(c)(Multi-Mode Multi-Band

Wireless Systems)

8

Q

(Off-Chip Components) (Direct-Conversion Receiver Architectures) [2](IF Filters) 2 (b) (Integrated Inductor Technologies) [3](Bias)(Matching Networks)(Off-Chip Inductors)

(Robustness)(Power Efficiency)

(Multi-Mode/Standard Reconfigurable Handsets) 2(c)(RF Front-End Filters)

3GPP (the 3rd Generation Partnership Project) WiMAX 50 ()(> 50)

I

Q

IQOsc.

Mech.Res.

IFAmp

90

Antenna

Switchable Mech.

Mech.Mixer-Filter

Res. Oscillator

On-ChipMech. Circuit

Multi-Band ProgrammableChannel-Select Filter Bank

SeriesSwitch

I

Q

IQOsc.

Mech.Res.

IFAmp

90

Antenna

Switchable Mech.

Mech.Mixer-Filter

Res. Oscillator

On-ChipMech. Circuit

On-ChipMech. Circuit

Multi-Band ProgrammableChannel-Select Filter Bank

SeriesSwitch

3

Q

(Miniaturization)(Integration)

TI DMD (Digital Micromirror Device) Analog Devices Inc. (ADI)Avago FBAR

9

(Ultra-Low Power)(High Selectivity) (Bandpass Filters) (Reference Oscillators)(Mixer-Filters)(MEMS Switches)

(Miniaturized)(Integrated)(Low Power)(Robustness)

(Bulky)(Discrete) Q (Direct-Conversion)[2] IF (Wideband IF)[4]

Q Superheterodyne [1]

[5]

3 [5]

(1) (RF Channel

Selection) 3

Q (Filter Banks)()

(ADC) (Baseband Components) Q

Q (Q 10,000)

(2)(All-Mechanical Signal Processing) 3 Q

(Mixing) (Antenna Switching)(Phase-Shifting)(Charge Pumping)(Frequency Generation) (A/D Conversion)

10

(3)(Low

Power Micro-Mechanical Frequency Synthesizer (Local Oscillator)) 3 (Local Oscillator) Q

(Phase-Locked Loops)

(Power Saving)

(Selectivity or Q)

Q 3 Q

Q (Quartz Crystals)(Surface Acoustic Wave Devices) Q 1,000

( )

CMOS MEMS ()(kHz GHz)(Frequency Selection)(Frequency Generation)

CAD-Layout ()

(Multi-Mode Multi-Standard)

1 Q

(Comb Drive Actuator)[6] 1 Q 80,000()

LF (30kHz - 300kHz)MF(300kHz - 3MHz)

(Clamped-Clamped Beam)[7] 1 (Vertical Vibration)

10MHzQ 8,000 Squeeze Film Damping Q 100

11

1 Q

1.

[6]

Frequency (Hz)

Tran

smis

sion

(dB

)

fo=18.8kHzQ=51,000

Frequency (Hz)

Tran

smis

sion

(dB

)

fo=18.8kHzQ=51,000

Q~53,000 @ 18.8kHz () Q~100 @ 18.8kHz () Q Flexural (LF-MF) Rx ~1M-5M

2.

[7]

Tran

smis

sion

(dB

)

Frequency (MHz)

Tran

smis

sion

(dB

)

Frequency (MHz)

Q~8,000 @ 10MHz () Q~50 @ 10MHz () Q~300 @ 70MHz (anchor loss) Q Flexural (HF-VHF) Rx ~500-5,000

3.

[8]

fo=101 .3M HzQ=11,500

fo=101 .3M HzQ=11,500

Q~11,500@ 10-200MHz () Q~2,000 @ 90MHz () Q Flexural (VHF) Rx ~500-5,000

4.

[9]

-90-80

-70

-60

-50

-40

-30

-20

61.08 61.13 61.18 61.23 61.28 61.33

Tran

smis

sion

(dB

)

Frequency (MHz)

Q= 48,000Rx = 1.5 k

-90

-80

-70

-60

-50

-40

-30

-20

61.08 61.13 61.18 61.23 61.28 61.33

Tran

smis

sion

(dB

)

Frequency (MHz)

Q= 48,000Rx = 1.5 k

Q~48,000@ 61MHz () Q~10,000 @ 61MHz () Q Extensional (VHF) Rx ~500-5,000

5. C

onto

ur

[11]

-102

-96

-90

-84

1507.4 1507.8 1508.2Frequency

Pow

er (d

Bm

)

fo=1.51GHzQ=11,555

-102

-96

-90

-84

1507.4 1507.8 1508.2Frequency

Pow

er (d

Bm

)

Frequency

Pow

er (d

Bm

)

fo=1.51GHzQ=11,555

Q~11,555 @ 1.5GHz () Q~10,100 @ 1.5GHz () Q Q Extensional (VHF-UHF) Rx ~500-50,000

6.

[12]

Q~2,300 @ 1.47GHz () Q>2,000 @ 1.47GHz () 1GHzQ Extensional (VHF-UHF) Rx ~500-50,000

7. C

onto

ur

[13]

1 463 .4 146 3.6 1 463 .8 1464 1 464 .2-9 8-9 6

-9 4

-9 2

-9 0

-8 8

fo=1.464GHz

Q=15,248

Pow

er [d

Bm

]

Frequency [MHz]1 463 .4 146 3.6 1 463 .8 1464 1 464 .2-9 8

-9 6

-9 4

-9 2

-9 0

-8 8

fo=1.464GHz

Q=15,248

Pow

er [d

Bm

]

Frequency [MHz]

Q~15,248 @ 1.46GHz () Q~10,165 @ 1.46GHz () 1GHzQ Extensional (VHF-UHF) Rx ~500-50,000

12

HF (3MHz - 30MHz)Anchor Loss

(Anchor)(Substrate) Q VHF (30MHz-300MHz) Anchor Loss VHF Q (Nodal Support)(Free-Free Beam)[8] 1

Anchor VHF Q 10,000

(Flexural Mode) k (Equivalent Stiffness)

mkfo 2= m

UHF (300MHz - 3GHz)

Extensional Mode 1

(Wine-Glass Mode)[9]61MHz Q 200,000 Q (Polysilicon) Q Contour-Mode

100MHz- 1.8GHz 1GHz Anchor Anchor Loss Q 1,600 [10]()[11]

Q Q 10,000 Squeeze Film Damping

UHF ()(Transduction Area)(Motional Current)(50) (Ring Resonators) 1

Contour-Mode [13]

(Quarter Wavelength)

1.464-GHz Q 15,000 MEMS CMOS

2

13

(Spurious Modes)

(Mechanical Coupling) 2 ( N )

N N [14] Q 125k() 15k(

) 2 (Flexural-Mode)[15] 480

2 [16] 11.73k 2.56kQ 100,000

Q Q

N

(Transmitter)

2

1.

[1

4]

Rx=125k@ 15.4MHz (1 Res.) Rx=43k@ 15.2MHz (3 Res.) Rx=22k@ 15.4MHz (10 Res.) Rx=15k@ 15.4MHz (20 Res.) Flexural (HF) Q~3,800-6,800

2.

[1

5]

0

50

100

150

200

250

300

69.50 70.00 70.50 71.00 71.50

Frequency [MHz]

Out

put [

uA]

Rx = 480Rx = 480

1Res.3Res.

5Res.

7Res.

0

50

100

150

200

250

300

69.50 70.00 70.50 71.00 71.50

Frequency [MHz]

Out

put [

uA]

Rx = 480Rx = 480

1Res.3Res.

5Res.

7Res.

Rx=2.82k@ 71.7MHz (1 Res.) Rx=2.3k@ 70.1MHz (3 Res.) Rx=1k@ 69.7MHz (5 Res.) Rx=0.48k@ 69.6MHz (7 Res.) Flexural (VHF) Q~9,100-17,500

3.

[1

6]

-110-100

-90

-80-70-60-50

-40-30

61.73 61.78 61.83 61.88 61.93

Tran

smis

sion

(dB

)

Frequency (MHz)

1Res.3Res.5Res.

9Res.

-110-100

-90

-80-70-60-50

-40-30

61.73 61.78 61.83 61.88 61.93

Tran

smis

sion

(dB

)

Frequency (MHz)

1Res.3Res.5Res.

9Res.

Rx=11.73k@ 61.8MHz (1 Res.) Rx=6.34k@ 61.8MHz (3 Res.) Rx=4.04k@ 61.8MHz (5 Res.) Rx=2.56k@ 61.8MHz (9 Res.) Extensional (VHF) Q~118,900-161,000

14

Q

(Insertion Loss)(Phase Noise)

3

[17]

[7] Q

3 9-MHz [18]

( Loss Pole)

(Transfer Function)

3 [19][20]

(Single-Ended System) Feedthrough Feedthrough

Feedthrough (Differential)

[21] 3 (Resonator Array)(Fully-Differential)

(Parasitics) Feedthrough

3 [22]

(Programmable Channels and Bandwidths)() (Low Impedance)(Low Insertion Loss)(Forth-Order)(Differential-Mode Input) (Common-Mode Output)(Eighth-Order)(Filter Transfer Function)

15

3

1.

[

17]

340kHz 403Hz 0.09% 64dB < 0.6dB

2.

[

7]

7.81MHz 18kHz 0.23% 35dB < 2dB

3.

[18

]

-70

-60

-50

-40

-30

-20

-10

0

8.69 8.74 8.79 8.84 8.89

Tran

smis

sion

(dB

)

Frequency (MHz)

-70

-60

-50

-40

-30

-20

-10

0

8.69 8.74 8.79 8.84 8.89

Tran

smis

sion

(dB

)

Frequency (MHz)

9MHz 20kHz 0.2% 51dB < 2.8dB

4.

[19]

-21

-18

-15

-12

-9

-6

-3

0

67.70 67.88 68.05 68.23 68.40

Frequency [MHz]

Tran

smis

sion

[dB

]Tr

ansm

issi

on (d

B)

Frequency (MHz)

-21

-18

-15

-12

-9

-6

-3

0

67.70 67.88 68.05 68.23 68.40

Frequency [MHz]

Tran

smis

sion

[dB

]Tr

ansm

issi

on (d

B)

Frequency (MHz)

68.1MHz 190kHz 0.28% > 10dB < 2.7dB

5. C

onto

ur

[20]

-25

-20

-15

-10

-5

0

155.2 155.4 155.6 155.8 156.0 156.2 156.4

Tran

smis

sion

(dB

)

Frequency (MHz)

-25

-20

-15

-10

-5

0

155.2 155.4 155.6 155.8 156.0 156.2 156.4

Tran

smis

sion

(dB

)

Frequency (MHz)

155.9MHz 201kHz 0.13% 20dB 2.5dB

6.

[21]

-75-70-65-60-55-50-45-40-35-30-25-20-15-10-50

162.6 162.8 163.0 163.2 163.4 163.6

Tran

smis

sion

(dB

)

Frequency (MHz)

Terminated

Un-Term.

-75-70-65-60-55-50-45-40-35-30-25-20-15-10-50

162.6 162.8 163.0 163.2 163.4 163.6

Tran

smis

sion

(dB

)

Frequency (MHz)

-75-70-65-60-55-50-45-40-35-30-25-20-15-10-50

162.6 162.8 163.0 163.2 163.4 163.6

Tran

smis

sion

(dB

)

Frequency (MHz)

Terminated

Un-Term.

163.1MHz 98.5kHz 0.06% > 20dB 2.43dB

7.

[22]

-80

-70

-60

-50

-40

-30

-20

-10

0

161.8 162.8 163.8 164.8

Un-terminatedTerminated

Tran

smis

sion

(dB

)

Frequency (MHz)

Terminated

Un-Term.

-80

-70

-60

-50

-40

-30

-20

-10

0

161.8 162.8 163.8 164.8

Un-terminatedTerminated

Tran

smis

sion

(dB

)

Frequency (MHz)

Terminated

Un-Term.

163.3MHz 253.7kHz 0.16% > 20dB < 2.73dB

16

3()

8.

[

14]

TIAvo-

vo+

RoRi

CBRx CxLx

CoCo1 Co2

Rx CxLx

CoCo1 Co2

15.4MHz Q=2,432 @10MHz L{ fm =1kHz}=-112dBc L{ fm =10kHz}=-136dBc

9.

[

16]

M3M4

M1 M2

MRf

Vbias2

Vbias1

M11 M12 M13 M14

Vcm

M17M18

M16M15Output

Input

M5

Wine-Glass Disk Array-Composite

Resonator

Wine-Glass Disk Array-Composite

Resonatorio

vi

VP

VSS = -1.65 V

M3M4

M1 M2

MRf

Vbias2

Vbias1

M11 M12 M13 M14

Vcm

M17M18

M16M15Output

Input

M5

Wine-Glass Disk Array-Composite

Resonator

Wine-Glass Disk Array-Composite

Resonatorio

vi

VP

VSS = -1.65 V

62MHz Q=118,900 @13MHz L{ fm =1kHz}=-140dBc L{ fm =10kHz}=-150dBc

[22] 128

(Medium-Scale Integrated Micromechanical Circuits)

4CMOS-MEMS [23]

(Timing Reference)

Q (Frequency Stability)(Phase Noise)

Q 3 [14][16]

[16] Q 118,900 TSMC 0.35-m

(Transresistance-Sustaining Amplifier)

GSM

17

CMOS-MEMS

Foundry- MEMS CMOS-MEMSCMOS-MEMS Dr. Gary K. Fedder ( Carnegie Mellon University ECE )Fedder Foundry CMOS

Release CMOS MEMS CMOS 4 [23]

Universitat Autnoma de Barcelona (UAB) 1GHz [24] CMOS Foundry CMOS-MEMS

MEMS

Q () CMOS Foundry RF MEMS

Prof. Clark T.-C. Nguyen ()

[1] P. Orsatti, et al., A 20-mA-receive , IEEE J.

Solid-State Circuits, vol. 34, no. 12, pp. 1869-1880,

Dec. 1999.

[2] A. A. Abidi, Direct-Conversion , IEEE J.

Solid-State Circuits, vol. 30, pp. 1399-1410,

December 1995.

[3] C. P. Yue, et al., On-Chip Spiral , IEEE J.

Solid-State Circuits, vol. 33, no. 5, May 1998, pp.

743-752.

[4] J. C. Rudell, et al., A 1.9-GHz , IEEE J.

Solid-State Circuits, vol. 32, no. 12, pp. 2071-2088,

Dec. 1997.

[5] C. T.-C. Nguyen, Vibrating RF , Proceedings,

2004 IEEE Custom Integrated Circuits Conf.,

Orlando, Florida, Oct. 3-6, 2004, pp. 257-264.

[6] W. C. Tang, et al., Laterally driven , Sensors

and Actuators, 20, 25-32, 1989.

[7] F. D. Bannon, et al., High-Q HF , IEEE J. Solid-State

Circuits, vol. 35, no. 4, pp. 512-526, April 2000.

18

[8] K. Wang, et al., VHF free-free , IEEE/ASME J.

Microelectromech. Syst., vol. 9, no. 3, pp. 347-360,

Sept. 2000.

[9] Y.-W. Lin, et al., Series-resonant , IEEE J.

Solid-State Circuits, vol. 39, no. 12, pp. 2477-2491,

Dec. 2004.

[10] J. Wang, et al., 1.156-GHz , IEEE Trans.

Ultrason., Ferroelect., Freq. Contr., vol. 51, no. 12,

pp. 1607-1628, Dec. 2004.

[11] J. Wang, et al., 1.51-GHz , Proceedings,

MEMS04, The Netherlands, Jan. 25-29, 2004 , pp.

641-644.

[12] Y. Xie, et al., UHF Micromechanical ,

Technical Digest, IEDM03, Washington, DC, Dec.

8-10, 2003, pp. 953-956.

[13] S.-S. Li, et al., Micromechanical hollow-

disk , Technical Digest, MEMS04,

Maastricht, The Netherlands, 2004, pp. 821-824.

[14] S. Lee, et al., Mechanically , Proceedings,

IEEE Int. Ultrasonics, Ferroelectrics, and

Frequency Control 50th Anniv. Joint Conf.,

Montreal, Canada, Aug. 24-27, 2004, pp. 280-286.

[15] M. U. Demirci, et al., Mechanically corner-coupled ,

Dig. of Tech. Papers, Transducers03, Boston,

Massachusetts, June 8-12, 2003, pp. 955-958.

[16] Y.-W. Lin, et al., Low phase noise , Technical

Digest, IEDM05, Washington, DC, Dec. 5-7,

2005, pp. 287-290.

[17] K. Wang, et al., High-order , IEEE/ASME J.

Microelectromech. Syst., vol. 8, no. 4, pp. 534-557,

Dec. 1999.

[18] S.-S. Li, et al., Bridged , Proceedings, IEEE

Int. Ultrasonics, Ferroelectrics, and Frequency

Control 50th Anniv. Joint Conf., Montreal, Canada,

Aug. 24-27, 2004, pp. 280-286.

[19] M. U. Demirci, et al., A low impedance , Dig.

of Tech. Papers, Transducers05, Seoul, Korea,

June 5-9, 2005, pp. 2131-2134.

[20] S.-S. Li, et al., Disk-array , Proceedings,

MEMS06, Istanbul, Turkey, Jan. 22-26, 2006, pp.

866-869.

[21] S.-S. Li, et al., An MSI , Dig. of Tech. Papers,

Transducers07, Lyon, France, June 10-14, 2007 ,

pp. 307-311.

[22] S.-S. Li, et al., A micromechanical ,

Proceedings, 2007 IEEE Int. Frequency Control

Symp., Geneva, Switzerland, May 29-June 1, 2007,

pp. 1356-1361.

[23] C.-C. Lo, Thesis, Carnegie Mellon University,

2008.

[24] J. Teva, et al., From VHF to UHF , Tech.

Digest, MEMS08, Tucson, Arizona, Jan. 13-17,

2008, pp. 82-85.

: :RF Micro Devices : :

CMOS-MEMS