november 18, 2002 1. shortchannel effects (cont.)...nov. 19 c. stork (ti): sub 100 nm process devel...

6.720J/3.43J ­ Integrated Microelectronic Devices ­ Fall 2002 Lecture 31­1

Lecture 31 ­ The ”Short” Metal­Oxide­Semiconductor Field­Effect

Transistor (cont.)

November 18, 2002

Contents:

1. Short­channel effects (cont.)

Reading assignment:

P. K. Ko, ”Approaches to Scaling.”

Seminar:

Nov. 19 ­ C. Stork (TI): Sub 100 nm Process Devel­opment for System­on­Chip Devices. Rm. 34­101, 4 PM.

6.720J/3.43J ­ Integrated Microelectronic Devices ­ Fall 2002 Lecture 31­2

Key questions

• Why does the threshold voltage seem to depend on the gate

length of a MOSFET?

• Why does the threshold voltage of a MOSFET seem to depend

on VDS?

6.720J/3.43J ­ Integrated Microelectronic Devices ­ Fall 2002 Lecture 31­3

1. Short­channel effects

� Vth dependence on L

Ideally, Vth does not depend on L, it only depends on xox and NA.

If L is short enough, depletion regions of source and drain start

overlapping underneath channel.

"long" MOSFET "short" MOSFET

n+n+

n+

p

n+n+

n+

p

EC EC

ΔEC

Efe Efe

Vth independent of L Vth depends on L: L Vth

Vth

Vth (long)

L

6.720J/3.43J ­ Integrated Microelectronic Devices ­ Fall 2002 Lecture 31­4

Complex 2D electrostatic problem:

• ΔVth depends on the relative strength of the lateral electrostatics

vs. the transversal electrostatics (”electrostatic integrity”).

• The tighter the gate controls φs, the weaker ΔVth dependence

on L.

Key dependencies:

• xox ↓⇒ |ΔVth| ↓

• NA ↑⇒ |ΔVth| ↓

• xj ↓⇒ Leff = L − 2 × 0.7 xj ↑⇒ |ΔVth| ↓

L

p

n+n+

n+

Leff

xj

0.7xj

This is bad! long MOSFET: Vth = f(xox, NA)

short MOSFET: Vth = f(xox, NA, L, xj)

Most important consequence: Vth harder to control in manufacturing

environment.

Vth model in next section.

n+n+n+

6.720J/3.43J ­ Integrated Microelectronic Devices ­ Fall 2002 Lecture 31­5

� Drain­induced barrier lowering (DIBL)

Depletion region associated with drain junction expands as VDS ↑ ⇒ additional Vth shift.

p

n+n+

Efe EC

p

n+n+ n+n+

p

n+n+

n+

Vth

VDS

Vth (long)

L

6.720J/3.43J ­ Integrated Microelectronic Devices ­ Fall 2002 Lecture 31­6

VDS=1.5 V

VDS=0.05 V

[from Liu et al., TED 40, 86 (1993)]

�

6.720J/3.43J ­ Integrated Microelectronic Devices ­ Fall 2002 Lecture 31­7

Simple analytical approximation to ΔVth [Liu et al., TED 40, 86

(1993)]:

ΔVth = [3(φbi − φsth) + VDS]e−Leff/λ

+ 2 (φbi − φsth)(φbi − φsth + VDS)e−Leff/2λ

with characteristic length:

λ =

����� �s

�oxxoxxdmax

and

Leff = L − 2 × 0.7 xj

Quantification of DIBL:

DIBL = |Vth(VDS = VDD) − Vth(VDS = 0.1 V )| mV/V VDD − 0.1

for a certain L device.

6.720J/3.43J ­ Integrated Microelectronic Devices ­ Fall 2002 Lecture 31­8

6.720J/3.43J ­ Integrated Microelectronic Devices ­ Fall 2002 Lecture 31­9

6.720J/3.43J ­ Integrated Microelectronic Devices ­ Fall 2002 Lecture 31­10

6.720J/3.43J ­ Integrated Microelectronic Devices ­ Fall 2002 Lecture 31­11

6.720J/3.43J ­ Integrated Microelectronic Devices ­ Fall 2002 Lecture 31­12

MOSFET design approach to manage DIBL:

1. shallower S/D junctions: xj = 0.1 µm → 0.05 µm

2. thinner gate oxide: xox = 9 nm → 6 nm

3. increased body doping: NA = 1.2×1017 cm−3 → 2.4×1017 cm−3

6.720J/3.43J ­ Integrated Microelectronic Devices ­ Fall 2002 Lecture 31­13

Comparison of simple model with 2D simulations:

[from Liu et al., TED 40, 86 (1993)]

6.720J/3.43J ­ Integrated Microelectronic Devices ­ Fall 2002 Lecture 31­14

Comparison of simple model with experiments:

6.720J/3.43J ­ Integrated Microelectronic Devices ­ Fall 2002 Lecture 31­15

DIBL also affects Ioff : VDS ↑⇒ Vth ↓⇒ Ioff ↑

Ioff

L=10 µm

L=1 µm

[from Fichtner and Potzl, 1979]

6.720J/3.43J ­ Integrated Microelectronic Devices ­ Fall 2002 Lecture 31­16

Empirical criteria for short­channel effects (from 2D simulations):

Critical gate length for short­channel behavior (set by DIBL):

2 1/3Lmin (µm) = 0.41[xjxox(WS + WD) ]

with:

• xj ≡ source and drain junction depth [µm]

˚• xox ≡ gate oxide thickness [A]

• WS, WD ≡ source and drain depletion region thickness [µm]

Figure 1, Graph from: High-Speed Semiconductor Devices. S.M. S2- 1990 John Wiley & Sons.

6.720J/3.43J ­ Integrated Microelectronic Devices ­ Fall 2002 Lecture 31­17

Key conclusions

• Vth depends on L and VDS:

– For short L, Vth depends on L: L ↓⇒ Vth ↓.

– Drain­induced barrier lowering (DIBL): impact of VDS on

Vth: VDS ↑⇒ Vth ↓.

• ΔVth reflects relative strength of lateral electrostatics vs. transveral

electrostatics (”electrostatic integrity”).

• Electrostatic integrity improves if xox ↓, NA ↑, L ↑, xj ↓.

• DIBL problematic because:

– Vth hard to control

– Ioff ↑