sot-89-3l plastic-encapsulate mosfets
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2N7002X MOSFET( N-Channel )
FEA TURES
MAXIMUM RATINGS (Ta=25 unless otherwise noted ) Symbol Parameter Value Unit
VDS Drain-Source Voltage 60 V
ID Drain Current 115 mA
PD Power Dissipation 500 mW
TJ Junction Temperature 150
SOT-89-3L
1.GATE 2. DRAIN 3. SOURCE
TSTG Storage Temperature -55~+150
High density cell design for low RDS(on) Voltage controlled small signal switch Rugged and reliable High saturation current capability
RθJA Thermal Resistance from Junction to Ambient 250 /W
VGS Gate -Source Voltage ±20 V
V(BR)DSS RDS(on)MAX ID
60V 5Ω@10V
115mA7Ω@5V
MARKING
Equivalent Circuit
APPLICATION Load Switch for Portable Devices
DC/DC Converter
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD
SOT-89-3L Plastic-Encapsulate MOSFETS
1 Rev - 1.0www.jscj-elec.com
MOSFET ELECTRICAL CHARACTERISTICS
aT =25 unless otherwise specified
Parameter Symbol Test conditions Min Typ Max Unit
Drain-source breakdown voltage V(BR)DSS VGS=0V,ID=250µA 60
Gate-threshold voltage* V(GS)th VDS=VGS, ID=250µA 1 2.5 V
Gate-body leakage lGSS VDS=0V, VGS= 20 V 80 nA
VDS=60V, VGS=0V 80 Zero gate voltage drain current IDSS nA
VGS=10V, ID=500mADrain-source on-resistance* RDS(on)
VGS=5V, ID=50mA
Forward tranconductance* gfs VDS=10V, ID=200mA 80 500 ms
Diode forward voltage* VSD IS=115mA,VGS=0V 0.55 1.2 V
Input capacitance Ciss 50
Output capacitance Coss
Reverse transfer capacitance Crss
VDS=25V, VGS=0V,f=1MHz 25
5
pF
± ±
Turn-on time
Turn-off time td(on)
td(off)
VDD=25V,RL=50 ,ID=500mA,VGEN=10V,RG=25
Ω Ω
20
40ns
* Pulse Test: Pulse width ≤300µs,duty cycle≤2%.
** These parameters have no way to verify.
**
**
**
**
**
5
7Ω
Drain-source on-voltage VDS(on) VGS=5V, ID=50mA 0.05 0.375 V VGS=10V, ID=500mA 0.5 3.75 V
2 Rev - 1.0www.jscj-elec.com
0 6 12 180
2
4
6
0 2 4 60.0
0.2
0.4
0.6
0.8
1.0
0.2 0.4 0.6 0.8 1.0 1.2 1.41E-3
0.01
0.1
1
0 1 2 3 4 50.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0 0.2 0.4 0.6 0.8 1.00
1
2
3
ID=50mA
ID=500mA
IDRDS(ON) ——
Ta=25
Pulsed
VGSRDS(ON) ——
ON
-RE
SIS
TA
NC
E
RD
S(O
N)
(Ω
)
GATE TO SOURCE VOLTAGE VGS
(V)
Ta=25
Pulsed
Ta=25
Pulsed
Transfer Characteristics
DR
AIN
CU
RR
EN
T
I D
(A
)
GATE TO SOURCE VOLTAGE VGS
(V)
3E-3
2
Ta=25
Pulsed
0.3
0.03
VSDIS ——
SO
UR
CE
CU
RR
EN
T
I S
(A)
SOURCE TO DRAIN VOLTAGE VSD
(V)
VGS
=5V
VGS
=10V,9V,8V,7V,6V
VGS
=4V
VGS
=3V
Output Characteristics
DR
AIN
CU
RR
EN
T
I D
(A
)
DRAIN TO SOURCE VOLTAGE VDS
(V)
VGS
=5V
VGS
=10V
Ta=25
Pulsed
ON
-RE
SIS
TA
NC
E
RD
S(O
N)
(Ω
)
DRAIN CURRENT ID (A)
Typical Characteristics
3 Rev - 1.0www.jscj-elec.com
Min Max Min MaxA 1.400 1.600 0.055 0.063b 0.320 0.520 0.013 0.020
b1 0.400 0.580 0.016 0.023c 0.350 0.440 0.014 0.017D 4.400 4.600 0.173 0.181D1E 2.300 2.600 0.091 0.102
E1 3.940 4.250 0.155 0.167e
e1L 0.900 1.200 0.035 0.047
SymbolDimensions In Millimeters Dimensions In Inches
1.550 REF. 0.061 REF.
1.500 TYP. 0.060 TYP.3.000 TYP. 0.118 TYP.
SOT-89-3L Package Outline Dimensions
SOT-89-3L Suggested Pad Layout
4 Rev - 1.0www.jscj-elec.com
NOTICE JSCJ reserve the right to make modifications,enhancements,improvements,corrections or
other changes without turther notice to any product herein.JSCJ does not assume any liability arising out of the application or use of any product described herein.
SOT-89-3L Tape and Reel
5 Rev - 1.0www.jscj-elec.com
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